CB 548 TRANSISTOR Search Results

C 547 C

Abstract: C 548 B C 547 B ic 548 bc 547 Transistors bc 548 BC 546 BC548 BC 548 bc 548 B 15
Contextual Info: BC 546 • BC 547 • BC 548 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Application: Pre and d river stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

transistor C 548 B

Abstract: transistor c 548 BC547 bc548 transistor 547 TRANSISTOR bc546 fairchild transistor b 548 transistor bc547 transistor 547 b C 548 B
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC546, VCeo=65V • LO W NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage

CB 548 transistor

Abstract: transistor C 548 B
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC546, VCeo=65V • LOW NOISE: BC549, BC550 • Complement to BC556 . BC560 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic Sym bol Collector Base Voltage

BC548

Abstract: bc547 bc546c transistor NPN 548 C 547 c bc546 transistor c 548 c BC547 w 2 d BC548 transistor transistor B 548
Contextual Info: ICC TO-92 Plastic-Encapsulate Transistors BC546,B/BC547fA,BfC/BC548,A,B,C TRANSISTOR NPN FEATURES on P cm ; IcM: 0 .6 2 5 W (T a m b = 2 5 ° C ) 0 .1 A WÊmÊ&m voltage V cbo: B C 546 : 80V B C 547 : 50V B C 548 : 30V S iÊ l^M Ê Ê p^àA d.ataraaa junction tem perature range

BC546

Abstract: bc548b
Contextual Info: BC546 to 548 yv _ SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic TO 92 package. QUICK REFERENCE D ATA BC546 Collector-emitter voltage V g E = 0 BC547 BC548 V CES max v CEO max 80 50 30 V Collector-emitter voltage (open base)

transistor c 548

Abstract: transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LT A G E : BC546, V CEo=65V • L O W NOISE: BC549, B C5S0 • Complement to BC556 . B C 560 ABSOLUTE MAXIMUM RATINGS <TA=25t C h aracte ristic Sym b o l Collector Base Voltage

JC547A

Abstract: JC546 JC547 C 548 B JC546B JC546A JC547B JC547C JC548 JC548A
Contextual Info: • bfc,S3S31 DDETRbfl 15b H A P X JC546 to 548 N AMER PHILIPS/DISCRETE b'ìE D SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in a plastic TO-92 especially suitable fo r use in driver stages o f audio amplifiers. QUICK REFERENCE D A T A

transistor C 548 B

Abstract: TR BC 548 transistor c 548
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC546, VOEo =65V • LOW NOISE: BC549, BC550 • Complement to BCS56 . BC 560 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage

C 547 B

Abstract: c547b c546b TRANSISTOR B 546b transistor C 546b C 546 B C548 free BC557 BC557 C546
Contextual Info: BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V 625 mWatts POWER FEATURES • NPN epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary PNP device:BC556,BC557,BC558 Series • Pb free product :99% Sn above can meet RoHS

transistor vc 548

Abstract: 547 transistor BC546.547 transistor c 548 transistor NPN 548 transistor C 548 B transistor C 547 TRANSISTOR BC 550 b transistor b 548 transistor c 548 c
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC546, VCEO= 6 5 V • LOW NOISE: BC549, BC550 • Com plem ent to BC556 . BC 560 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage

BC550

Abstract: ic 548 CBC549 C 548 B BC550C BC549B transistors BC 548 BC 558 bc548b bc557 bc547b
Contextual Info: SIEMENS SIE » • ßS3Sfc.05 GG41b0fl 7ST « S I E G S I E M EN S A K T I E N 6 E S E L L S C H A F "F Z ? *-2 ./ NPN Silicon AF Transistors • • • • BC546 BC550 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz

Amplifier with transistor BC549

Abstract: BC546 BC549 BC550 BC556 BC560 bc549 noise figure bc556 transistor npn transistor of bc548 Transistor B C 458
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Amplifier • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

bc546 fairchild

Abstract: transistor BC549 hfe of transistor BC548 Transistor BC546/547/548/549/550 BC549 input for bc548 npn transistor NPN transistor bc548 BC546 BC549 BC550
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

ic 558

Abstract: ic 556 transistors BC 548 BC 558 ic 556 specifications BC557 BC558 556 driver BC558 driver bc 558 transistors BC 548 BC 558 PNP
Contextual Info: BC 556 • BC 557 • BC 558 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Applications: Pre and driver stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

transistor bc549

Abstract: bc556 transistor bc546 fairchild Transistor BC546/547/548/549/550 CBC546 BC546 BC549 BC550 BC556 BC560
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

DAS05

Contextual Info: Ordering n u m b e r:EN 1801E _ 2SC3676 NPN Triple Diffused Planar Silicon Transistor SA iYO i 900V/300mA High-Voltage Amp, High-Voltage Switching Applications A pplications • High-voltage amplifiers. - High-voltage switching applications. •Dynamic focus applications.

bc550

Abstract: bc550 noise figure transistor BC 548 Data transistor NPN 548 BC548 npn bc550 transistor transistor bc 548 npn BC550CTA
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: Power Transistors 2SC3977, 2SC3977A 2SC3977, 2SC3977A Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching Unit ! mn • Features 4 .4 m a x . ,1 0 .2 m a x . 5.7max. • High sp eed sw itch in g 2.9max. • High c o lle c to r-b a s e v o lta g e V lbo

transistor BC 458

Abstract: BC 458 transistor transistor BC 548 Data bc546 fairchild BC546BTA bc546 TRANSISTOR B 546b BC 546A of transistor BC548 bc 547 b transistor
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

bc549

Abstract: transistor BC549 hfe Transistor NPN BC 549B BC549 NPN transistor transistor c 548 c Transistor Bc547 npn bc548 fairchild Amplifier with transistor BC549 TO92-3 Package Dimensions transistor BC 548 Data
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

JC547

Abstract: JC546
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 14 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors JC546; JC547; JC548 FEATURES PINNING • Low curren t max. 100 mA

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC546, VCeo= 65V . LOW NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage

APPLICATION OF BC548 transistor

Abstract: Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor BC548CTA transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor 2sc 548

Abstract: CBC 548 B
Contextual Info: ISIEÛ 2SC D • ô23SbOS QQQ45G2 PNP Silicon Planar Transistors — SIEMENS AKTIENÛESELLSCHAFi02 BF 470 BF 472 °- BF 4 7 0 and BF 4 7 2 are epitaxial PNP silicon planar transistors in TO 1 2 6 plastic package 1 2 A 3 DIN 41 8 6 9 , sheet 4 . The collector is conductively connected to the metallic