CB 548 TRANSISTOR Search Results

C 547 C

Abstract: C 548 B C 547 B ic 548 bc 547 Transistors bc 548 BC 546 BC548 BC 548 bc 548 B 15
Contextual Info: BC 546 • BC 547 • BC 548 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Application: Pre and d river stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

transistor C 548 B

Abstract: transistor c 548 BC547 bc548 transistor 547 TRANSISTOR bc546 fairchild transistor b 548 transistor bc547 transistor 547 b C 548 B
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC546, VCeo=65V • LO W NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage

CB 548 transistor

Abstract: transistor C 548 B
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC546, VCeo=65V • LOW NOISE: BC549, BC550 • Complement to BC556 . BC560 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic Sym bol Collector Base Voltage

BC548

Abstract: bc547 bc546c transistor NPN 548 C 547 c bc546 transistor c 548 c BC547 w 2 d BC548 transistor transistor B 548
Contextual Info: ICC TO-92 Plastic-Encapsulate Transistors BC546,B/BC547fA,BfC/BC548,A,B,C TRANSISTOR NPN FEATURES on P cm ; IcM: 0 .6 2 5 W (T a m b = 2 5 ° C ) 0 .1 A WÊmÊ&m voltage V cbo: B C 546 : 80V B C 547 : 50V B C 548 : 30V S iÊ l^M Ê Ê p^àA d.ataraaa junction tem perature range

BC546

Abstract: bc548b
Contextual Info: BC546 to 548 yv _ SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic TO 92 package. QUICK REFERENCE D ATA BC546 Collector-emitter voltage V g E = 0 BC547 BC548 V CES max v CEO max 80 50 30 V Collector-emitter voltage (open base)

JC547A

Abstract: JC546 JC547 C 548 B JC546B JC546A JC547B JC547C JC548 JC548A
Contextual Info: • bfc,S3S31 DDETRbfl 15b H A P X JC546 to 548 N AMER PHILIPS/DISCRETE b'ìE D SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in a plastic TO-92 especially suitable fo r use in driver stages o f audio amplifiers. QUICK REFERENCE D A T A

transistor C 548 B

Abstract: TR BC 548 transistor c 548
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC546, VOEo =65V • LOW NOISE: BC549, BC550 • Complement to BCS56 . BC 560 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage

C 547 B

Abstract: c547b c546b TRANSISTOR B 546b transistor C 546b C 546 B C548 free BC557 BC557 C546
Contextual Info: BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V 625 mWatts POWER FEATURES • NPN epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary PNP device:BC556,BC557,BC558 Series • Pb free product :99% Sn above can meet RoHS

transistor vc 548

Abstract: 547 transistor BC546.547 transistor c 548 transistor NPN 548 transistor C 548 B transistor C 547 TRANSISTOR BC 550 b transistor b 548 transistor c 548 c
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC546, VCEO= 6 5 V • LOW NOISE: BC549, BC550 • Com plem ent to BC556 . BC 560 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage

BC550

Abstract: ic 548 CBC549 C 548 B BC550C BC549B transistors BC 548 BC 558 bc548b bc557 bc547b
Contextual Info: SIEMENS SIE » • ßS3Sfc.05 GG41b0fl 7ST « S I E G S I E M EN S A K T I E N 6 E S E L L S C H A F "F Z ? *-2 ./ NPN Silicon AF Transistors • • • • BC546 BC550 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz

Amplifier with transistor BC549

Abstract: BC546 BC549 BC550 BC556 BC560 bc549 noise figure bc556 transistor npn transistor of bc548 Transistor B C 458
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Amplifier • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

bc546 fairchild

Abstract: transistor BC549 hfe of transistor BC548 Transistor BC546/547/548/549/550 BC549 input for bc548 npn transistor NPN transistor bc548 BC546 BC549 BC550
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

ic 558

Abstract: ic 556 transistors BC 548 BC 558 ic 556 specifications BC557 BC558 556 driver BC558 driver bc 558 transistors BC 548 BC 558 PNP
Contextual Info: BC 556 • BC 557 • BC 558 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Applications: Pre and driver stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

BC548B PHILIPS

Abstract: BC546 philips BC548c PHILIPS BC548A BC547 driver audio bc547 bc54b BC546 BC547B BC546A
Contextual Info: I I N AMER PHILIPS/DISCRETE bTE D • bbSBTBl 0D2755Ö bfl3 H A P X BC546 to 548 I SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic TO-92 envelope, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA

DAS05

Contextual Info: Ordering n u m b e r:EN 1801E _ 2SC3676 NPN Triple Diffused Planar Silicon Transistor SA iYO i 900V/300mA High-Voltage Amp, High-Voltage Switching Applications A pplications • High-voltage amplifiers. - High-voltage switching applications. •Dynamic focus applications.

bc550

Abstract: bc550 noise figure transistor BC 548 Data transistor NPN 548 BC548 npn bc550 transistor transistor bc 548 npn BC550CTA
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: Power Transistors 2SC3977, 2SC3977A 2SC3977, 2SC3977A Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching Unit ! mn • Features 4 .4 m a x . ,1 0 .2 m a x . 5.7max. • High sp eed sw itch in g 2.9max. • High c o lle c to r-b a s e v o lta g e V lbo

transistor BC 458

Abstract: BC 458 transistor transistor BC 548 Data bc546 fairchild BC546BTA bc546 TRANSISTOR B 546b BC 546A of transistor BC548 bc 547 b transistor
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

bc549

Abstract: transistor BC549 hfe Transistor NPN BC 549B BC549 NPN transistor transistor c 548 c Transistor Bc547 npn bc548 fairchild Amplifier with transistor BC549 TO92-3 Package Dimensions transistor BC 548 Data
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC546, VCeo= 65V . LOW NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage

APPLICATION OF BC548 transistor

Abstract: Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor BC548CTA transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor 2sc 548

Abstract: CBC 548 B
Contextual Info: ISIEÛ 2SC D • ô23SbOS QQQ45G2 PNP Silicon Planar Transistors — SIEMENS AKTIENÛESELLSCHAFi02 BF 470 BF 472 °- BF 4 7 0 and BF 4 7 2 are epitaxial PNP silicon planar transistors in TO 1 2 6 plastic package 1 2 A 3 DIN 41 8 6 9 , sheet 4 . The collector is conductively connected to the metallic

BC547

Abstract: transistor bc547 specifications transistor bc547 applications bc547 marking transistor information of BC547 transistor BC 547B Use of BC547 transistor BC547ATA BC547-J22Z transistor BC 458
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range