CAY TRANSISTOR SD Search Results

ibm T22

Abstract: IBM0316169C IBM0316809C 22TCK SDRAM 1996
Contextual Info: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3

IBM0316169C

Abstract: IBM0316809C ibm t20
Contextual Info: . IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Preliminary Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8

Contextual Info: NT56V6610C0T NT56V6620C0T 64Mb PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.0 SEP, 1999 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

NT56V6610C0T-8A

Abstract: nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A
Contextual Info: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 June, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

NT56V6610C0T-75

Abstract: NT56V6610C0T-8A NT56V6610C0T NT56V6610C0T-75B NT56V6610C0T-8B NT56V6620C0T
Contextual Info: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 April, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

IBM0312404

Abstract: IBM03124B4 IBM0312804
Contextual Info: . IBM0312164 IBM0312804 IBM0312404 IBM03124B4 128Mb Synchronous DRAM - Die Revision B Advance 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle

IBM03254K4

Abstract: IBM0325164 IBM DATE CODE
Contextual Info: . IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb Synchronous DRAM - Die Revision B Advance Rev 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle

IBMN312404CT3

Abstract: IBMN312804CT3 IBMN312804CT3B-75H
Contextual Info: . IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb Synchronous DRAM - Die Revision B Preliminary Features • Programmable CAS Latency: 2, 3 • High Performance: -75H3 -75D 3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency tCK Clock Cycle

IBMN325164CT3

Abstract: IBMN325404CT3 IBMN325804CT3
Contextual Info: . IBMN325164CT3 IBMN325804CT3 IBMN325404CT3 256Mb Synchronous DRAM - Die Revision B Preliminary Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle

IBMN312404CT3

Abstract: IBMN312804CT3
Contextual Info: . IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb Synchronous DRAM - Die Revision B Preliminary Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle

IBMN364164

Abstract: IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360
Contextual Info: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle

IBM0364804CT3C-360

Abstract: IBM0364404CT3C-10 IBM0364164CT3C360 IBM0364164 IBMN364804 ibm dram
Contextual Info: . IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, -10, Units CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 150 133 100 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 10 ns tAC Clock Access Time1

ibm0312804ct3a-260

Abstract: IBM0312804CT3A360 IBM0312404 IBM03124B4 IBM0312804 IBM0312404CT3A IBM0312804CT3A-75A ibm dram IBM0312804CT3A-360
Contextual Info: . IBM0312804 IBM0312164 IBM0312404 IBM03124B4 128Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A, CL=3 -260, CL=2 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns Time1 — — — 7 ns tAC Clock Access Time2

ISL9008IEMZ

Abstract: MARKING VO MARKING CAW CAY transistor sd caw sc70-5 ISL9008 "MARKING VO"
Contextual Info: ISL9008 NS DESIG W E N PART F OR NDED ACEM ENT E M M L ECO RE P Datasheet NO T R MENDED 08A M O ISL90 REC March 11, 2008 FN9235.1 Low Noise LDO with Low IQ and High PSRR Features ISL9008 is a high performance single low noise, high PSRR LDO that delivers a continuous 150mA of load current. It has

IBMN364804

Contextual Info: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 ns tAC Clock Access Time1 6 —

IBM03254B4CT3A-75A

Contextual Info: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1

tsop-54

Abstract: sam av2 sdram 4 bank 4096 16 T4 PN diode IBM0364404CT3B10
Contextual Info: . IBM0364404 IBM0364804 IBM0364164 IBM03644B4 64Mb Synchronous DRAM - Die Revision B Preliminary Features • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command • High Performance: -260, CL=2,3 -360, CL=3 -10, CL=3

Contextual Info: L6208 DMOS DRIVER FOR BIPOLAR STEPPER MOTOR • OPERATING SUPPLY VOLTAGE FROM 8 TO 52V ■ ■ 5.6A OUTPUT PEAK CURRENT 2.8A RMS RDS(ON) 0.3Ω TYP. VALUE @ Tj = 25°C OPERATING FREQUENCY UP TO 100KHz NON DISSIPATIVE OVERCURRENT PROTECTION DUAL INDEPENDENT CONSTANT TOFF PWM

Contextual Info: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time 1 — — — ns tAC Clock Access Time 2

BL460

Abstract: 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT
Contextual Info: NT5SV64M4AT L NT5SV32M8AT(L) NT5SV16M16AT(L) 256Mb Synchronous DRAM Features • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns —

NT5SV16M16AT

Abstract: NT5SV32M8AT NT5SV64M4AT
Contextual Info: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb Synchronous DRAM Features • • • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz

nt5sv32m8at-75b

Abstract: NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT DRAMs
Contextual Info: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb Synchronous DRAM Features • • • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz

NT5SV16M8CT

Contextual Info: NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT 128Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time1 — — — ns tAC Clock Access Time2 5.4

NT5SV32M4CT-75B

Abstract: NT5SV16M8CT NT5SV32M4CT NT5SV8M16CT
Contextual Info: NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT 128Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time1 — — — ns tAC Clock Access Time2 5.4