CASE MARKING Y9 Search Results

BAT42WS

Abstract: BAT43WS
Contextual Info: Certificate TH97/10561QM BAT42WS - BAT43WS Certificate TW00/17276EM SCHOTTKY BARRIER DIODES 0.40 0.15 max 1.15 0.80 * Case : SOD-323 plastic Case * Weight : approx. 0.004 g * BAT42WS Marking Code : X9 * BAT43WS Marking Code : Y9 1.35 MECHANICAL DATA : 1.10

Contextual Info: BAT42WS - BAT43WS SCHOTTKY BARRIER DIODES 0.40 0.15 max 1.15 0.80 * Case : SOD-323 plastic Case * Weight : approx. 0.004 g * BAT42WS Marking Code : X9 * BAT43WS Marking Code : Y9 1.35 MECHANICAL DATA : 1.10 1.80 1.60 * Low forward voltage drop * Fast switching

marking CODE Y9

Abstract: BAT42WS BAT43WS
Contextual Info: BAT42WS - BAT43WS SCHOTTKY BARRIER DIODES 0.40 0.15 max 1.15 0.80 * Case : SOD-323 plastic Case * Weight : approx. 0.004 g * BAT42WS Marking Code : X9 * BAT43WS Marking Code : Y9 1.35 MECHANICAL DATA : 1.10 1.80 1.60 * Low forward voltage drop * Fast switching

153 SOT23

Contextual Info: ZENER DIODES 350mW BZX84 SERIES CASE TYPE: T0-236AB (SOT-23) % Type Marking Ze n e r V o lta g e !1 1 at D yn a m ic resistance at T e m p , coeffi­ cient of Ze n e r Vo ltag e at In In In V rV rzj i i avz i H / K Test current D yn a m ic resistance at

case marking y9

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

Contextual Info: ATC 600S Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0603 • Laser Marking Optional • RoHS Compliant • High Self Resonance Frequencies

CAP 0805 ATC 600F

Abstract: ATC 600F 600F
Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

Contextual Info: ATC 600S Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0603 • Laser Marking Optional • High Self Resonance Frequencies Applications:

Contextual Info: ATC 600S Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0603 • Laser Marking Optional • High Self Resonance Frequencies Applications:

Contextual Info: ATC 600S Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0603 • Laser Marking Optional • RoHS Compliant • High Self Resonance Frequencies

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

CAP 0805 ATC 600F

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

CAP 0805 ATC 600F

Abstract: ATC 600F DK0033T DK0034T diode MARKING CODE A9 DK0035T 250v 104 K capacitor DK00 DK0032T EIA J code marking
Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

DK0026T

Abstract: DK0027T
Contextual Info: ATC 600S Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0603 • Laser Marking Optional • High Self Resonance Frequencies Applications:

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

CAP 0805 ATC 600F

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

Contextual Info: ATC 600S Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0603 • Laser Marking Optional • High Self Resonance Frequencies Applications:

DK0025T

Abstract: DK0027T DK0026 DK0026T diode MARKING CODE A9 MARKING CODE KIT RO4350 MIL-PRF-123 DK0025
Contextual Info: ATC 600S Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0603 • Laser Marking Optional • RoHS Compliant • High Self Resonance Frequencies

diode Marking code v3

Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Contextual Info: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.

V = Device Code

Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
Contextual Info: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

V = Device Code

Contextual Info: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

V = Device Code

Abstract: MC74VHC1G00
Contextual Info: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

ATC 600F

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

Contextual Info: ATC 600S Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0603 • Laser Marking Optional • High Self Resonance Frequencies Applications: