CASE 221A STYLE 1 Search Results

2N6403 MOTOROLA

Abstract: 2N6506 applications 2N6508 MOTOROLA 2N6507 MOTOROLA 2n6397 2N6403 2n6396 2N6397 MOTOROLA 2N6506 MCR69-1
Contextual Info: SCRs continued On-State (RMS) Current 12 AMPS Tc = 90°C T c = 85°C 16 AMPS 25 AMPS T c = 90°C T c = 85°C f i Case 221A-02 TO-220AB Style 3 f Case 221A-02 TO-220AB Style 3 Case 221Â-02 TO-220AB Style 3 MCR69-1 2N6394 25 V 50 V 2N6400 2N6504 2N6401 2N6505

2110-V

Abstract: MCR265 2N4200 MCR265-6 2N4200 motorola crowbar Motorola mcr729 MCR264-4 MCR264-6 MCR264-8
Contextual Info: SCRs continued Radar Modulators ON-STATE (IRMS) CURRENT 40 AMPS 55 AMPS 100 AMPS Tc = 80°C Tc = 70-C Tc = 85°C t f i Case 221A-02 TO-220AB Style 3 Case 221A-02 TO-220AB Style 1 MCR264-4 MCR265-4 MCR264-6 MCR265-6 Case 63-03 TO-64 Style 1 200 V 2N4200 400 V

MAC15

Abstract: MAC224 2N6343A MAC223 2n6347a MAC15-4 MAC-223 MAC223-7 MAC224-10 MAC224A8
Contextual Info: TRIACS continued ON-STATE (RMS) CURRENT Tc = 80°C I 15 AMPS / 20 AMPS 25 AIMPS Tc = 80°C Tc = 90°C 40 AMPS / Tc = 75°C Case 221A-02 70-220AB Style 4 Case 221A-02 TO-220AB Style 4 MAC212-4 MAC212A4 2N6342A 2N6346A MAC15-4 MAC15A4 MAC320-4 MAC320A4 MAC223-4

MAC97AB

Abstract: 2N6070 MOTOROLA MAC97 2N6070A 2N6343 MAC-97 2N6343 MOTOROLA 2N6074 2N6075A 2N6070
Contextual Info: TRIACs ON-STATE RMS CURRENT ON-STATE (RMS) CURRENT 0.6 AMPS 4.0 AMPS Tc = 50°C Tc = 85" Sensitive Gate Sensitive Gate Sensitive Gate Case 29-02 TO-226AA (TO-92) Style 12 Case 77-04 Style 5 Case 221A-02 T0-220AB Style 4 / 8.0AMPS / Tc = 80°C 2N6069 2N6069A

transistor mcr100-8

Abstract: put thyristor Motorola Master Selection Guide 221A-06 transistor mcr100-6 CASE 221A-04 MCR225-2FP transistor mcr12n 2N6073 MOTOROLA 221A-04
Contextual Info: Thyristors and Triggers In Brief . . . Motorola’s broad line of Thyristors includes. . . . • A full line of TRIACs and SCRs covering a forward current range from 0.5 to 55 amperes and blocking voltages from 15 to 800 volts. • Plastic package for lowest cost which includes the fully

MAC12SM

Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
Contextual Info: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA

MRF245

Abstract: MRF237 MRF221 MRF238 MRF243 MRF244 2n5591 2N6151 2N6153 MRF212
Contextual Info: TRIACs in Plastic Packages O N -ST A T E R M S C U R R E N T 25 30 0.45 Am p 4.0 Am p 8.0 Am p 10 Am p Case 29-02 TO-92 Style 12 Case 77-03 Style 5 Case 221-02 TO-220 A B Style 2 Case 90-05 Style 4 Case 221-02 T 0 -22 0 A B Style 2 M A C 10-1 2N6068 MAC92-1I

MUR Motorola fast diode

Abstract: schottky rectifier motorola mbr motorola MR760 T4 SOD-123 1N4004 1N4007 sod-123 MR MS SOD-123 MUR3080 ultra fast recovery diodes 1N5822 SMB motorola ZENER smb MRA4004
Contextual Info: Rectifiers In Brief . . . Continuing investment in research and development for discrete products has created a rectifier manufacturing facility that matches the precision and versatility of the most advanced integrated circuits. As a result, Motorola’s silicon rectifiers span

221D

Abstract: MURF820 MBR0520LT1 MBR2030CTL MBR2515L MBR2535CTL MBR4015LWT MBRB2515L MR2535S MBRB3030CTL
Contextual Info: Rectifiers In Brief . . . Continuing investment in research and development for discrete products has created a rectifier manufacturing facility that matches the precision and versatility of the most advanced integrated circuits. As a result, Motorola’s silicon rectifiers span

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO–220 CASE 221A–09 ISSUE AA DATE 01/02/2000 SCALE 1:1 –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE

221A-09

Abstract: MCR72 MCR72-8 CASE 221A-09 MCR72-8G MCR72-3 MCR72-6 221A-07 MCR72-6G
Contextual Info: MCR72-3, MCR72-6, MCR72-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface.

NT2955G

Abstract: NTP2955G NT2955 P-CHANNEL TO-220 NTP2955
Contextual Info: NTP2955 Power MOSFET −60 V, −12 A, Single P−Channel, TO−220 Features • • • • Low RDS on Rugged Performance Fast Switching Pb−Free Package is Available* Applications V(BR)DSS RDS(on) Typ ID MAX −60 V 156 mW @ −10 V −12 A • Industrial

MCR72

Abstract: mcr72-6 MCR72-8G
Contextual Info: MCR72−3, MCR72−6, MCR72−8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface.

418B-03

Contextual Info: NTP12N50, NTB12N50 Preferred Device Advance Information Power MOSFET 12 Amps, 500 Volts N−Channel TO−220 and D2PAK http://onsemi.com Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.

Contextual Info: NTST60100CT, NTSB60100CT-1 Product Preview Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Exceptionally Low VF = 0.36 V at IF = 5 A VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 60 AMPERES, 100 VOLTS Features

BUV26

Abstract: V50B
Contextual Info: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high–speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS

NGP15N41CL

Abstract: NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 Direct fuel injection aac marking
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped

Contextual Info: NTP10N40, NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps, 400 Volts N−Channel TO−220 and D2PAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

MCR68

Abstract: MCR68-2
Contextual Info: MCR68−2 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features • Glass-Passivated Junctions for Greater Parameter Stability and Reliability SCRs 12 AMPERES RMS 50 VOLTS • Center-Gate Geometry for Uniform Current Spreading Enabling

BUV26

Abstract: BUV26G 12AIB
Contextual Info: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high−speed applications. Features • • • • • http://onsemi.com Switchmode Power Supplies High Frequency Converters Relay Drivers Driver Pb−Free Package is Available* 12 AMPERES

Contextual Info: NTP15N40, NTB15N40 Preferred Device Advance Information Power MOSFET 15 Amps, 400 Volts N−Channel TO−220 and D2PAK http://onsemi.com Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.

TS30100SG

Abstract: NTST30100SG TS30100 NTSB30100S-1G TS3010
Contextual Info: NTST30100SG, NTSB30100S-1G Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Exceptionally Low VF = 0.39 V at IF = 5 A 1 2, 4 Features 3 • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage

Contextual Info: NTST30100SG, NTSB30100S-1G Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Exceptionally Low VF = 0.39 V at IF = 5 A 1 2, 4 Features 3 • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage