CAPACITOR 22 PF DNP Search Results

DNP015

Contextual Info: DNP015 Green Mode Fairchild Power Switch FPS Features Description mWSaver™ Technology The DNP015 is a next-generation, Green Mode Fairchild Power Switch (FPS™) that incorporates Fairchild’s innovative mWSaver™ technology, which dramatically reduces standby and no-load power

Fp2189

Contextual Info: FP2189 1 - Watt HFET Product Information Product Features • • • • • • • • 50 – 4000 MHz ISO & EPC compliant +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package Functional Diagram

fp21g

Abstract: fp21-g FP2189-G sot89 Marking code fp21g
Contextual Info: FP2189 1-Watt HFET Product Features • • • • • • Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years Applications •

fp21g

Abstract: fp21-g MARKING CODE 51 5 fet sot-89 fp-21g FP2189 FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking code transistor ROHM
Contextual Info: FP2189 1-Watt HFET Product Features • • • • • • Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years Applications •

C18pF

Abstract: Fp2189
Contextual Info: FP2189 The Communications Edge TM 1-Watt HFET Product Information Product Description Functional Diagram The FP2189 is a high performance 1-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm

FP1189

Abstract: 8893 application diagram
Contextual Info: FP1189 ½ - Watt HFET Product Information Product Features • • • • • • • • Product Description 50 – 4000 MHz ISO & EPC compliant +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package

FP21G

Abstract: FP2189-G FP2189 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89 fp21-g marking code transistor ROHM rf transistor 6ghz 1w
Contextual Info: FP2189 The Communications Edge TM Product Information 1-Watt HFET Product Features Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years

fp21g

Abstract: fp2189-g wj model marking code FP2189 FP2189-PCB1900S ML200D EL11-8 Fp2189
Contextual Info: FP2189 The Communications Edge TM 1-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years

FP2189

Abstract: transistor C1000 Y matched transistors MARKING CODE 51 5 fet sot-89 FP21G
Contextual Info: FP2189 The Communications Edge TM Product Information 1-Watt HFET Product Features Product Description x x x x x x Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless RF Parameter 3 Operational Bandwidth Test Frequency

FP21G

Abstract: MARKING CODE 51 5 fet sot-89 FP2189 FP2189-G FP2189G MARKING CODE SOT-89 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89
Contextual Info: FP2189 1 - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz The FP2189 is a high performance 1-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain

Contextual Info: FP31QF 2 – Watt HFET Product Information Applications • RFID: HF, UHF, microwave • Readers Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain

Contextual Info: FP31QF 2 – Watt HFET Product Information • RFID: HF, UHF, microwave • Readers • • • Industrial Portable Handheld Units Min Typ Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 Thermal Resistance Junction Temperature (2)

FP11G

Abstract: 113 marking code transistor ROHM FP1189 FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S
Contextual Info: FP1189 ½ - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain

Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET

FP1189-G

Abstract: FP11G FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S marking c7 sot-89
Contextual Info: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package

FP11G

Abstract: TRANSISTOR BC 158 pnp WJ transistor bc 206 transistor bc 3843
Contextual Info: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET

MARKING S0 sot89

Abstract: bc 3843 sot-89 marking dn
Contextual Info: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram

inductor marking

Abstract: CAPACITOR chip mtbf
Contextual Info: CV210-1 The Communications Edge TM Preliminary Product Information AMP1 INPUT IF1 OUTPUT GND 26 GND 27 25 24 23 22 RF/IF 21 BIAS GND 2 20 GND IF Amp 1 BIAS 3 19 N/C GND 4 18 GND N/C 5 GND 6 N/C 7 LO Driver Amp 17 LO IF Amp 2 16 GND 15 N/C Typical applications include frequency downconversion

umt1n applications

Abstract: fp2189-G GETEK Fp2189
Contextual Info: FP2189 The Communications Edge TM 1-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years

LQW1608

Abstract: dv4 smd transistor wideband fsk receiver MSP430 SMV1233 SMV1233-011 SMV1247 S-PQFP-G48 TRF6900
Contextual Info: TRF6900 SINGLE-CHIP RF TRANSCEIVER SLAS213C – SEPTEMBER 1999 – REVISED MAY 2000 D D D D D D D D D D Single-Chip RF Transceiver for 868 MHz and 915 MHz ISM Bands 850 MHz to 950 MHz Operation FM/FSK Operation for Transmit and Receive 24-Bit Direct Digital Synthesizer DDS With

SOT89 MARKING CODE 8G

Abstract: g4bc fp2189-G fp21-g marking code 85Z Fp2189 wj model marking code FP2189 FP21G transistor C1000 Y MARKING C14 85Z
Contextual Info: FP2189 The Communications Edge TM Product Information 1-Watt HFET Product Features x x x x x x 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Applications

d 2507

Abstract: transistor P1 P
Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years

marking 08 sot89

Abstract: SOT89 MARKING CODE 8G
Contextual Info: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram

WJ 3

Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years