C96* MARKING Search Results

A103-A12

Contextual Info: 8 95 -Q.4 — 0.1 D — 0.1 C 85 -0.2 P/N without o V42254- TYCO S S -0.4 - 0.1 D - 0.1 C + old 10 11 12 14 15 16 Row a 59,76 -0.4 - 0.1 D - 0.1 C 29,02 -0.2 >o O P/N _ XXX+-XXXX+ LO LO x-xxxxxxx-x QAAÀÀ x-xxxxxxx-x 03 A1 2,1 m jH TT B Manufacturing

595B3

Abstract: SR10-0244-02 C42334-A416-C40 V42254-P2266-B640 V42254-P21G1-C9G0 DIN41612 C96 termina Receptacle female press fit C42334 DIN41612 marking
Contextual Info: 8 95 -Q.4 — 0.1 D — 0.1 C 85 -0.2 P/N without o V42254- TYCO S S -0.4 - 0.1 D - 0.1 C + old 10 11 12 14 15 16 Row a 59,76 -0.4 - 0.1 D - 0.1 C 29,02 -0.2 >o O P/N _ XXX+-XXXX+ LO LO x-xxxxxxx-x QAAÀÀ x-xxxxxxx-x 03 A1 2,1 m jH TT B Manufacturing

Contextual Info: 8 9 5 -0.4 - 0.1 D - 0.1 C 8 5 -0.2 10 55 - 0.1 D - 0.1 C o + -0 4 11 12 59,76 - 0.1 D - 0.1 C 3L39A o 0 0 28-69 22d - 3L39A 03A1 2,1 TT T ra c e a b i n I i t y - i d e n t i f i c a t o + I o + 0.1 a c c o r d in g to DIN IEC 62 Point 5.1 j u i t tttttttttt

CMPTA96

Abstract: c96* marking
Contextual Info: Central CMPTA96 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA96 type is a surface mount epoxy molded PNP silicon planar epitaxial transistors designed for extremely high voltage

CMPTA96

Abstract: c96* marking sot-23 pnp PNP 400V
Contextual Info: Central CMPTA96 SURFACE MOUNT PNP EXTREMELY HIGH VOLTAGE SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA96 type is a surface mount epoxy molded PNP silicon planar epitaxial transistors designed for extremely high voltage applications.

CMPTA96

Abstract: C96* marking
Contextual Info: CMPTA96 SURFACE MOUNT EXTREMELY HIGH VOLTAGE PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA96 type is a surface mount epoxy molded PNP silicon planar epitaxial transistor designed for extremely high voltage

c96* marking

Abstract: c96 SOT23-6
Contextual Info: Central" CMPTA96 Sem iconductor Corp. SURFACE MOUNT PNP EXTREMELY HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA96 type is a surface mount epoxy molded PNP sili­ con planar epitaxial transistors designed for extremely high voltage applications.

Contextual Info: Central" CMPTA96 Semiconductor Corp. SURFACE MOUNT PNP EXTREMELY HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA96 type is a surface mount epoxy molded PNP sili­ con planar epitaxial transistors designed for extremely high voltage applications.

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

t06 marking sot23

Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Contextual Info: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

ERNI C96

Contextual Info: 85,5 c1 Stecklänge / mating length ESL max.94 6 ±0,1 4,8 ±0,2 E = early mate, late break / voreilend 3 ±0,2 31x2,54=78,74 S = standard 0,6 3,95 L = late mate, early break / nacheilend Datum 2,5 3 2,54 a b c Anforderungsstufe/ date +0,1 RC 2 +0,1 ERNI 10,2 -0,2

ERNI RC2

Abstract: Erni RC2 ERNI ERNI C96 ERNI C96 RC2
Contextual Info: c1 Stecklänge / mating length ESL 2,54 2x2,54=5,08 6 ±0,1 4,8 ±0,2 max.94 31x2,54=78,74 0,8 ±0,1 a1 a32 0,8 ±0,1 2x2,54=5,08 8,7 +0,2 max.11,1 2,5 -0,2 85,5 c32 E = early mate, late break / voreilend 0,6 S = standard Datum 2,5 +0,1 +0,1 RC2 a b c 3 ERNI

ERNI C96

Contextual Info: c1 Stecklänge / mating length ESL 2,54 2x2,54=5,08 6 ±0,1 4,8 ±0,2 max.94 31x2,54=78,74 0,8 ±0,1 a1 a32 0,8 ±0,1 2x2,54=5,08 8,7 +0,2 max.11,1 2,5 -0,2 85,5 c32 E = early mate, late break / voreilend 0,6 S = standard +0,1 RC1 a b c 3 ERNI 10,2 -0,2 XXXXXXX

254835

Abstract: ERNI C96
Contextual Info: 85,5 c1 Stecklänge / mating length ESL 3,95 4,8 ±0,2 6 ±0,1 0,8 ±0,1 a1 0,8 ±0,1 a32 2x2,54=5,08 8,7 +0,2 max.11,1 2,5 -0,2 c32 E = early mate, late break / voreilend 3 -0,4 94 max. 0,6 S = standard 2,5 Anforderungsstufe date class +0,1 a b c 3,05 2,54

ERNI C96

Contextual Info: 85,5 c1 Stecklänge / mating length ESL max.94 3,95 E = early mate, late break / voreilend 3 -0,4 31x2,54=78,74 0,6 S = standard 2,5 Anforderungsstufe class +0,1 L = late mate, early break / nacheilend a b c 3,05 2,54 2 x 2,54 =5,08 Datum date +0,1 RC 2

ERNI C96

Abstract: 364915
Contextual Info: 85,5 c1 Stecklänge / mating length ESL max.94 3,95 E = early mate, late break / voreilend 3 -0,4 31x2,54=78,74 0,6 S = standard 2,5 Anforderungsstufe class +0,1 L = late mate, early break / nacheilend a b c 3 2,54 2 x 2,54 =5,08 Datum date +0,1 RC 2 10,2 -0,2

ERNI C96

Abstract: ERNI 374980 PBT gf 30 22062 374980
Contextual Info: c32 c1 Stecklänge / mating length ESL max.94 3,95 E = early mate, late break / voreilend 3 -0,4 31x2,54=78,74 0,6 S = standard 2,5 +0,1 L = late mate, early break / nacheilend a b c 3,05 2,54 2 x 2,54 =5,08 Anforderungsstufe class date 10,2 -0,2 RC 2 ERNI

conclusion of zener diode voltage report

Abstract: 1314 MARKING DIODE lrc zener diode
Contextual Info: 乐山无线电股份有限公司 Leshan Radio Company, Ltd. 产 品 规 格 书 Specification of Products Samsung VD TO CUSTOMER CUSTOMER P.N. LRC P.N. LRC099-04BT1G DESCRIPTION SC-70-6 ESD Protection Array APPROVE BY 接受印 ACKNOWLEDGEMENT 兹证明此份资料已经收到

Contextual Info: LESHAN RADIO COMPANY, LTD. 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY DESCRIPTIONS LRC099-04AT1G The LRC099-04AT1G is a 4-channel ultra low capacitance rail clamp ESD protection diodes array. Each channel consists of 3 a pair of ESD diodes that steer positive or negative ESD current

V42254-P2270-C960

Abstract: AEG B32 C42334-A416-C40 6-1393637-3 C42334 C960 P2163 SR10 V42254-P2263-C480N marking code RAL AB
Contextual Info: 6 7 TH IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D FOR 5 4 3 2 PU B LIC ATIO N LOC ALL INTERNATIONAL RIGHTS RESERVED. COPYRIGHT - 9 5 - 0 ,4 5 5 - 0 ,4 0,1 D 8 5 - 0 ,2 P /N R E V IS IO N S H BY TYCO ELECTRONICS CORPORATION. old D IS T 2 9 ,0 2 - 0 , 2

LRC099-04AT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY LRC099-04AT1G S-LRC099-04AT1G DESCRIPTIONS The LRC099-04AT1G is a 4-channel ultra low capacitance rail clamp ESD protection diodes array. Each channel consists of 3 a pair of ESD diodes that steer positive or negative ESD current

LRC099-04BT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY LRC099-04BT1G S-LRC099-04BT1G DESCRIPTIONS The LRC099-04BT1G is a 4-channel ultra low capacitance rail clamp ESD protection diodes array. Each channel consists of 6 a pair of ESD diodes that steer positive or negative ESD current