C735 O Search Results

GR-139-CORE

Contextual Info: L-com Specification/Procedure C735-CS1 Issue A Issued By R.CARRICK Date of Issue 08/04 C735 Bulk Cable Specification Construction Details Cond. Stranding: 26 AWG solid silver plated copper Insul/Thickness: Foam polyethylene .030 inch .76mm Jacket/Thickness: PVC .015 inch (.38mm)

Contextual Info: epitex LED CHIP C735-40P Opto-Device & Custom LED SPECIFICATION OF LED CHIP C735-40P [INFRARED] 1 Commodity Type and Physical Characteristics. 1. Material GaAlAs/GaAlAs DDH) 2. Electrode Top Side N (cathode) side : Au Alloy & Pad Bottom Side P (anode) side

Contextual Info: epitex Opto-Device & Custom LED LED CHIP ＬＥＤ C735-55V SPECIFICATION OF LED CHIP C735-55V [INFRARED] 1 Commodity Type and Physical Characteristics. 1. Material GaAlAs/GaAlAs DDH) 2. Electrode Top Side N (cathode) side : Au Alloy & Pad Bottom Side P (anode) side

C735 transistor

Abstract: transistor c735 diode c735 diode C733 C737 transistor transistor C734
Contextual Info: International îî«r]Rectifier PD - 5.029 CPU165MU IGBT SIP MODULE Ultra-Fast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

ro300

Abstract: DIP18 LC7350 LC7351
Contextual Info: » c g 5 V 3 « 0A¿L££ ^<7222/90^9/12/^ ^# b '^r ^ < 1 7 ^ o afe ^ /“V •o Oft II ;.0 *,.l! r*a»fv 3 «I Oi s as 98 r l « H S íiw 0^ * C f j Sí C* 3 r* 0 .5 [ft fJ 33 rj » ' S » a i m <* « 3 r im $4 s3 g a ^ ?! i: @ & 3 a r* ^ í3 ¿ t SS 9« S ' ít

C735 transistor

Abstract: transistor C733 c733 transistor transistor C734 C733 C738 transistor c735 diode c740 c734 diode C733
Contextual Info: PD - 5.029 CPU165MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • 1,2 Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz

C735 transistor

Abstract: transistor C733 transistor C734 diode c740 transistor c735 c733 transistor diode c735 diode C733 transistor C740 diode e c738
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 5.029 CPU165MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • 1,2 Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz

C738

Abstract: diode c722 st C404A S2A-TP R537 diode C721 TBD0805 transistor C734 DE C308 C736
Contextual Info: 8 6 7 2 3 4 5 1 REVISIONS AVDD_P5V REV DESCRIPTION DATE APPROVED AGND DNI VGA CH ENABLE OFF AIN-A R125 DNI R124 51 2 3 4 5 DNI ADT1-1WT T101 3 6 C109 C103 2 1 5 AGND 0.1UF 4 AGND 0.1UF C103A NC AGND 1 5 SEC PRI ETC1-1-13 1 8 0.1UF 0.1UF C122 C121 0.1UF 25

IC P605 8 pin

Abstract: schottky diode c750 p605 ic smd schottky diode c750 AD9272 p605 8pin ic p605 diode p605 8 pins IC P605 C732 SMD
Contextual Info: Evaluation Board User Guide UG-001 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD9272/AD9273 for Ultrasound Systems FEATURES DOCUMENTS NEEDED Full featured evaluation board for the AD9272/AD9273

EPCS64SI16N

Abstract: tyco connectors MBRS360T3G d507 8C735 u708 C734 g23 c723 U707 EP2SGX30CF780C5N
Contextual Info: 8 6 7 1 2 3 4 5 REVISIONS REV PARALLEL I/O DESCRIPTION DATE APPROVED CONNECTIONS +VADJ OPTIONAL +VADJ C DIFFIO_TX0P DIFFIO_RX1N DIFFIO_TX1N DIFFIO_RX1P DIFFIO_TX1P DIFFIO_RX2N DIFFIO_TX2N DIFFIO_RX2P DIFFIO_TX2P DIFFIO_RX3N DIFFIO_TX3N DIFFIO_RX3P DIFFIO_TX3P

DS493

Contextual Info: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP

C624000XFSD18XA

Abstract: ST2W008 RT8070SP PCIE_rext C625000XFSD18XA
Contextual Info: 5 4 3 2 1 SABER LITE REV-D USB PORT1 Power Rail D 5 VOLT IN 5VOLTS 4AMPS AC ADAPTER SWITCHING REGULATORS USB OTG Power Rail D USB PORT2 USB HOST RJ45 MOLEX CONNECTOR USB PORT3 SD4 UARTS RS-232 SERIAL FLASH JTAG USB TYPE A USB2514 RGMII KSZ9021RN C Micro USB

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

manual temperature controller CHB 702

Abstract: temperature controller CHB 402 manual transistor C734 diode c649 transistor C640 32C114 diode c741 smd diode c644 smd diode c549 transistor C618
Contextual Info: Octal, 14-Bit, 50 MSPS Serial LVDS 1.8 V A/D Converter AD9252 8 ADCs integrated into 1 package 93.5 mW ADC power per channel at 50 MSPS SNR = 73 dB to Nyquist Excellent linearity DNL = ±0.4 LSB (typical) INL = ±1.5 LSB (typical) Serial LVDS (ANSI-644, default)

smd diode c644

Abstract: diode c649 smd diode c548 C748 SMC transistor C734 smd diode c549 C706 diode c624 DIODE smd diode C645 diode c741
Contextual Info: Octal, 12-Bit, 40/50 MSPS Serial LVDS 1.8 V A/D Converter AD9222 8 ADCs integrated into 1 package 93 mW ADC power per channel at 50 MSPS SNR = 70 dB to Nyquist ENOB = 11.3 bits SFDR = 84 dBc Excellent linearity DNL = ±0.3 LSB (typical) INL = ±0.4 LSB (typical)

c606 Schottky diode

Abstract: avago bar code on the box smd diode c644
Contextual Info: Octal, 14-Bit, 50 MSPS, Serial LVDS, 1.8 V ADC AD9252 8 analog-to-digital converters ADCs integrated into 1 package 93.5 mW ADC power per channel at 50 MSPS SNR = 73 dB (to Nyquist) ENOB = 12 bits SFDR = 84 dBc (to Nyquist) Excellent linearity DNL = ±0.4 LSB (typical); INL = ±1.5 LSB (typical)

transistor C618

Abstract: C705 ANSI-644 C538 diode c750 j303 L612 s m r707 smd diode c521 smd diode C543
Contextual Info: Octal, 12-Bit, 40/50/65 MSPS Serial LVDS 1.8 V A/D Converter AD9222 8 ADCs integrated into 1 package 114 mW ADC power per channel at 65 MSPS SNR = 70 dB to Nyquist ENOB = 11.3 bits SFDR = 80 dBc Excellent linearity: DNL = ±0.3 LSB (typical), INL = ±0.4 LSB (typical)

ge radio c412

Abstract: transistor C734 c619 prone me diode c741 smd diode c644 L603 diode c649 R161 022 C621 GE C712
Contextual Info: Octal, 14-Bit, 50 MSPS, Serial LVDS, 1.8 V ADC AD9252 8 analog-to-digital converters ADCs integrated into 1 package 93.5 mW ADC power per channel at 50 MSPS SNR = 73 dB (to Nyquist) ENOB = 12 bits SFDR = 84 dBc (to Nyquist) Excellent linearity DNL = ±0.4 LSB (typical); INL = ±1.5 LSB (typical)

smd schottky diode c748

Abstract: diode c649 fa 502 smd diode c644 diode C726 specification C705 C748 SMC diode C725 transistor C732 c606 Schottky diode
Contextual Info: Octal, 14-Bit, 50 MSPS, Serial LVDS, 1.8 V ADC AD9252 8 analog-to-digital converters ADCs integrated into 1 package 93.5 mW ADC power per channel at 50 MSPS SNR = 73 dB (to Nyquist) ENOB = 12 bits SFDR = 84 dBc (to Nyquist) Excellent linearity DNL = ±0.4 LSB (typical); INL = ±1.5 LSB (typical)

smd diode c521

Abstract: smd diode c644 transistor C734 diode c741 smd c402 diode c624 DIODE smd c646 temperature controller CHB 402 manual diode c649 C644 transistor
Contextual Info: Octal, 10-Bit, 40/65 MSPS Serial LVDS 1.8 V A/D Converter AD9212 Eight ADCs integrated into 1 package 100 mW ADC power per channel at 65 MSPS SNR = 60.8 dB to Nyquist Excellent linearity DNL = ±0.3 LSB (typical) INL = ±0.4 LSB (typical) Serial LVDS (ANSI-644, default)

transistor C734

Abstract: smd schottky diode c750 smd c646 diode c649 C529 DIODE C538 transistor C546 L603 diode C725 L512 led
Contextual Info: Octal, 10-Bit, 40 MSPS/65 MSPS, Serial LVDS, 1.8 V ADC AD9212 8 analog-to-digital converters ADCs integrated into 1 package 100 mW ADC power per channel at 65 MSPS SNR = 60.8 dB (to Nyquist) ENOB = 9.8 bits SFDR = 80 dBc (to Nyquist) Excellent linearity

2T203

Abstract: HSC-ADC-FIFO5-INTZ R627
Contextual Info: Octal, 14-Bit, 50 MSPS, Serial LVDS, 1.8 V ADC AD9252 Data Sheet 8 analog-to-digital converters ADCs integrated into 1 package 93.5 mW ADC power per channel at 50 MSPS SNR = 73 dB (to Nyquist) ENOB = 12 bits SFDR = 84 dBc (to Nyquist) Excellent linearity

dx C212 diode

Abstract: ADP3339AKCZ-5-RL7 C705 c732 SMD C748 SMC C750 SMC diode c741 s m r707 smd diode c521 SMD R618
Contextual Info: Octal, 14-Bit, 50 MSPS, Serial LVDS, 1.8 V ADC AD9252 FEATURES APPLICATIONS Medical imaging and nondestructive ultrasound Portable ultrasound and digital beam-forming systems Quadrature radio receivers Diversity radio receivers Tape drives Optical networking

C547 smd

Abstract: C538 C706 diode smd diode C544 c744 diodes AD9212-65 c119 prone me AD9212 ultrasound vga c537 A transistor c624 DIODE
Contextual Info: Octal, 10-Bit, 40 MSPS/65 MSPS, Serial LVDS, 1.8 V ADC AD9212 8 analog-to-digital converters ADCs integrated into 1 package 100 mW ADC power per channel at 65 MSPS SNR = 60.8 dB (to Nyquist) ENOB = 9.8 bits SFDR = 80 dBc (to Nyquist) Excellent linearity