C5V 1 Search Results

C100P

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV1470 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES E B L ・High Capacitance Ratio : C1V/C5V=5.0 Min. L ・Variations of Capacitance Values is Little. D ・Excellent C-V Characteristics.

Contextual Info: MAZDA C5V «M TRIODE HEXODE CHANGEUR DE FREQUENCE ET OSCILLATEUR CULOT OCTAL Tension filament Intensité filament Hauteur'maximale Diamètre maximal Tension d ’anode hexode Courant d’anode hexode Pente hexode Tension d'anode triode Courant d ’anode triode

Contextual Info: 1/4 STRUCTURE PRODUCTSERIES Silicon Monolithic Integrated Circuit 2-ch Switching Regulator Controller TYPE BD9848FV ・High Input-voltage Vcc=35V ・MOSFET-driver circuit built-in（dual circuit for step-down output） ・Built-in circuits for error amplifier reference voltage (1.0 V1%)

BD9846

Abstract: bd98 SSOP-B20 c5v diode diode c5v
Contextual Info: 1/4 STRUCTURE PRODUCTSERIES Silicon Monolithic Integrated Circuit 2-ch Switching Regulator Controller TYPE BD9846FV FEATURES ・High Input-voltage Vcc=35V ・MOSFET-driver circuit built-in（dual circuit for step-down output） ・Built-in circuits for error amplifier reference voltage

C5VI

Abstract: C5V1 c3v9 c5v6 C6V2 55 c5v1 BZX84 BZX84C BZX84-C18 BZX84-C27
Contextual Info: BZX84C series CDIL SILICON PLANAR VOLTAGE REGULATOR DIODES Low pow er general purpose voltage regulator diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC _3.0_ 2.8 0.48 0.38 3 = CATHODE 0.14 3 2.6 2.4 0.60 0.40 _T02 0.89"

1SV149

Contextual Info: 1SV 149 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : C iy /C g y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V

Contextual Info: 1SV149 T O SH IB A SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : C iy /C g v = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V M A X IM U M RATINGS (Ta = 25°C)

lm 8712

Abstract: LM 4741 1SV149
Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1 S V 1 4 9 U n it in m m A M RADIO BAND TUNING APPLICATIONS, • H igh C apacitance Ratio : C i v / C 8V = 15 Min. • H igh Q : Q = 200 (Min.) • Sm all Package • Low V oltage O peration : 1V-8V

1sv149

Contextual Info: 1SV149 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : Ci y /C8 y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V

1SV149

Contextual Info: TOSHIBA 1SV 149 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS 4.2MAX. • High Capacitance Ratio : C iy /C g y = 15 Min. • High Q : Q = 200 (Min.) • Small Package • Low Voltage Operation

ltc6802g-2

Abstract: LTC6802-2 Zener c9v zener diode c5v LTC6802G LTC6802-1 bidirectional optocoupler c5v zener diode ltc6802 LT6003
Contextual Info: LTC6802-2 Multicell Addressable Battery Stack Monitor Features Description Measures Up to 12 Li-Ion Cells in Series 60V Max n Stackable Architecture Enables Monitoring High Voltage Battery Stacks n Individually Addressable with 4-Bit Address n 0.25% Maximum Total Measurement Error

LT6000

Abstract: LTC6802-2 LTC6802-1
Contextual Info: LTC6802-2 Multicell Addressable Battery Stack Monitor FEATURES n n n n n n n n n n n n n DESCRIPTION Measures Up to 12 Li-Ion Cells in Series 60V Max Stackable Architecture Enables Monitoring High Voltage Battery Stacks Individually Addressable with 4-Bit Address

zener diode C5V

Abstract: Zener c9v 3.1v to 350v ZENER DIODE LTC6802-1 c5v zener diode zener c6v fet n-channel pin configuration ADC ic 0808 pin diagram ADC IC 0808 ic 0808 pin diagram
Contextual Info: Electrical Specifications Subject to Change LTC6802-1 Multicell Battery Stack Monitor FEATURES DESCRIPTION n The LTC 6802-1 is a complete battery monitoring IC that includes a 12-bit ADC, a precision voltage reference, a high voltage input multiplexer and a serial interface. Each

Contextual Info: HN1V02H SILICON EPITAXIAL PLANAR TYPE Unit in mm AM RADIO BAND TUNING APPLICATIONS , High Capacitance Ratio : ClV/C8V=19.5 Typ. . High Q : Q=200(Min.) . Including Two Devices in FM8 Package (Flat Pack Mini 8 Pin) k i + 0.1 0.15 - 0 . 0 5 : V r =1~8V K . Lou Voltage Operation

marking AJ

Abstract: marking AJ 7 1V01H
Contextual Info: SILICON EPITAXIAL PLANAR TYPE HN1V01H Unit in mm AM RADIO BAND TUNING APPLICATIONS . High Capacitance Ratio : C1V/C8V=19,5 Typ. . High Q : Q=200(Min.) . Including Four Devices in F118 Package (Flat Pack Mini 8 Pin) . Low Voltage Operation M A X I M U M RATINGS (Ta=25°C)

MFRC52x

Abstract: AN166510 - Amplifier antenna matching calculation RFSim99 antenna matching 13,56 mhz calculation AN10893 13.56MHZ RFID nxp nxp proximity antenna design antenna matching calculation NXP antenna design guide 13.56 power amplifier nxp
Contextual Info: AN10893 RF Amplifier for NXP contactless MFRC52x Rev. 1.0 — 4 November 2009 182010 Application note PUBLIC Document information Info Content Keywords RFID, Antenna Design, RF Amplifier, Antenna Matching, contactless reader Abstract This application notes provides guidance on antenna and RF amplifier

LTC6802-1

Contextual Info: LTC6802-1 Multicell Battery Stack Monitor FEATURES n n n n n n n n n n n n DESCRIPTION Measures up to 12 Li-Ion Cells in Series 60V Max Stackable Architecture Enables >1000V Systems 0.25% Maximum Total Measurement Error 13ms to Measure All Cells in a System

Contextual Info: SILICON EPITAXIAL PLANAR TYPE TRANSISTOR HN1V02H U nit in mm TÔT A M R A D IO B A N D T U N IN G A PP LIC A T IO N S . 45-02 • • • High Capacitance Ratio : CIV / C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV101 FM TU N ER A PP LIC A TIO N S. • • • • H igh C apacitance Ratio Low Series Resistance Sm all Package. Low T uning Voltage Range C3V ! C9v = 2.0~2.7 rs = 0.3ü Typ. 3V-9V M A X IM U M R ATIN G S (Ta = 25°C)

transistor J1c

Contextual Info: HN2V02H SILICON EPITAXIAL PLANAR TYPE TRANSISTOR A M R A D IO B A N D T U N IN G APPLICATIONS. • U n i t in m m • H igh C apacitance Ratio : C 1 V /C 8 V = 19.5 Typ. H igh Q : Q = 200 (Min.) Including Three Devices in FM 8 Package (F lat Pack M ini 8Pin)

HN1V01H

Contextual Info: HN1V01H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 01H Unit in mm AM RADIO BAND TUNING APPLICATIONS. + 0.3 4.5 - 0.2 High Capacitance Ratio :CIV /C8V = 19.5 Typ. High Q :Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)

Contextual Info: TOSHIBA HN2V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. — • • • • High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin)

HN1V02H

Contextual Info: TOSHIBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range 1 1 SYMBOL VR Tj T stg RATING 16 125 -5 5 -1 2 5 UNIT V

H123

Abstract: MARKING D3 8pin HN2V02H
Contextual Info: HN2V02H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : CIV /C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1—8V