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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
Datasheet
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PUCC5880QDFCQ1
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Texas Instruments
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Automotive, 20-A, isolated real-time variable IGBT/SiC MOSFET gate driver with advanced protection 32-SSOP -40 to 125 |
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UCC5870QDWJRQ1
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Texas Instruments
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Automotive, 3.75kVrms 30A single-channel functional safety isolated gate driver for IGBT/SiC 36-SSOP -40 to 125 |
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UCC5870QDWJQ1
|
|
Texas Instruments
|
Automotive, 3.75kVrms 30A single-channel functional safety isolated gate driver for IGBT/SiC 36-SSOP -40 to 125 |
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PUCC5871QDWJRQ1
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Texas Instruments
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Automotive 30-A isolated 5.7-kV VRMS IGBT/SiC MOSFET gate driver with advanced protection features 36-SSOP -40 to 125 |
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