C5460 TRANSISTOR Search Results

C5460 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

C5460 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V Maximum Ratings Tc = 25°C Characteristics	Original	2SC5460	PDF
2SC5460 Abstract: C5460 Contextual Info: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V Maximum Ratings Tc = 25°C Characteristics	Original	2SC5460 2SC5460 C5460	PDF
Contextual Info: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings Tc = 25°C Characteristics	Original	2SC5460	PDF
2SC5460 Abstract: C5460 TRANSISTOR Contextual Info: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications • Unit: mm High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings Tc = 25°C Characteristics	Original	2SC5460 2SC5460 C5460 TRANSISTOR	PDF
2SC5460 Abstract: C5460 Contextual Info: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications • Unit: mm High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings Ta = 25°C Characteristics	Original	2SC5460 2SC5460 C5460	PDF
transistor c3150 Abstract: c3271 KEMA KEUR thermostat C4108 Contextual Info: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for	Original	E3842S E3843S EO24C0045510 EO26C0045510 EO28C0045510 EO28P0181510 EO28P0501510 EO30C0045510 SP00C0011010 SP00C0012010 transistor c3150 c3271 KEMA KEUR thermostat C4108	PDF
C5802 Abstract: c1226a modern china tv 8893 circuit diagram c5888 Reducing sleeve, AWG 16-20 8741 substitution Contextual Info: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for	Original	E3842S E3843S EO24C0045510 EO26C0045510 EO28C0045510 EO28P0181510 EO28P0501510 EO30C0045510 SP00C0011010 SP00C0012010 C5802 c1226a modern china tv 8893 circuit diagram c5888 Reducing sleeve, AWG 16-20 8741 substitution	PDF