C5122 TRANSISTOR Search Results

C5122 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
AM27C512-200DI		Rochester Electronics LLC	AM27C512 - 512K (64K x 8) CMOS EPROM	PDF
BLA1011-300		Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B		Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA		Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B		Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF

C5122 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C5122 TRANSISTOR Abstract: transistor c5122 2SC5122 C5122 Contextual Info: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)	Original	2SC5122 C5122 TRANSISTOR transistor c5122 2SC5122 C5122	PDF
C5122 TRANSISTOR Abstract: 2SC5122 Contextual Info: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)	Original	2SC5122 O-92MOD C5122 TRANSISTOR 2SC5122	PDF
C5122 TRANSISTOR Abstract: C5122 2SC5122 transistor c5122 Contextual Info: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)	Original	2SC5122 O-92MOD C5122 TRANSISTOR C5122 2SC5122 transistor c5122	PDF
Contextual Info: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)	Original	2SC5122 O-92MOD	PDF
C5122 TRANSISTOR Abstract: C5122 2SC5122 Contextual Info: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • • Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)	Original	2SC5122 O-92MODlled C5122 TRANSISTOR C5122 2SC5122	PDF
AT89C5122D Abstract: WT7 SMD A14N Contextual Info: Features • Clock Controller • • • • • • • • • • • • – 80C51 core with 6 clocks per instruction – 8 MHz On-Chip Oscillator – PLL for generating clock to supply CPU core, USB and Smart Card Interfaces – Programmable CPU clock from 500 KHz / X1 to 48 MHz / X1	Original	80C51 4202C AT89C5122D WT7 SMD A14N	PDF
WT4 smd Abstract: scr 151 automatic room power controller using scr 10uH coil THX 201 AT8XC5123 SCR Gate Drive for ac to dc converter THx 208 AT89C51RD2 PROGRAMMER dps 8000 Contextual Info: Features • Clock Controller • • • • • • • • • • • • – 80C51 core with 6 clocks per instruction – 8 MHz On-Chip Oscillator – PLL for generating clock to supply CPU core, USB and Smart Card Interfaces – Programmable CPU clock from 500 KHz / X1 to 48 MHz / X1	Original	80C51 4202C WT4 smd scr 151 automatic room power controller using scr 10uH coil THX 201 AT8XC5123 SCR Gate Drive for ac to dc converter THx 208 AT89C51RD2 PROGRAMMER dps 8000	PDF