C5 MARKING DIODE Search Results

Contextual Info: DB2J309 Silicon epitaxial planar type Unit: mm For high speed switching circuits • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: C5

pcb diagram welding inverter

Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coeficient of the on-state

Si2315DS

Contextual Info: Si2315DS Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2315DS (C5)* *Marking Code

Contextual Info: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2315DS (C5)* *Marking Code

UC320

Abstract: CIRCUIT diagram welding inverter diode K14
Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state

Contextual Info: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2315DS (C5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

NEC Ga FET marking L

Abstract: Ga FET marking 1D 2SJ209 TF101-D NEC Ga FET marking A NEC Ga FET marking z NEC Ga FET "marking M" NEC Ga FET
Contextual Info: AdLib OCR Evaluation MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8±0.2 00 + 1.5 1~t, c'! +1 0~ C14 U T 0~ 0.65 _+0015 Ll 2 FEATURES Lo I 3 d+ csI Marking M 6 + t L C5 1 . Sourco 2 . Ga . 3 . Drain " Directly driven by lCs; having a 5 V power supply .

N223

Abstract: a5 marking
Contextual Info: CM1420, CM1422 LCD EMI Filter Array with ESD Protection Description The CM1420 and CM1422 are EMI filter arrays with ESD protection, which integrate six and eight Pi−filters C−R−C , respectively. The CM1420/22 has component values of 15 pF − 100 W − 15 pF. These devices include ESD protection diodes on every

Contextual Info: CM1420, CM1422 LCD EMI Filter Array with ESD Protection Description The CM1420 and CM1422 are EMI filter arrays with ESD protection, which integrate six and eight Pi−filters C−R−C , respectively. The CM1420/22 has component values of 15 pF − 100 W − 15 pF. These devices include ESD protection diodes on every

N051

Abstract: CM1405 CM1405-01CP CM1405-01CS CM1405-03CS IEC610004-2
Contextual Info: PRELIMINARY CM1405 LCD EMI Filter Array with ESD Protection Features Product Description • • CAMD's CM1405 is an EMI filter array with ESD protection, which integrates eight Pi- filters C-R-C . The CM1405 has component values of 25pF-100Ω-25pF. The parts include avalanche-type ESD diodes on every

Contextual Info: PRELIMINARY CM1405 LCD EMI Filter Array with ESD Protection Features Product Description • • CAMD's CM1405 is an EMI filter array with ESD protection, which integrates eight Pi- filters C-R-C . The CM1405 has component values of 25pF-100Ω-25pF. The parts include avalanche-type ESD diodes on every

DSB010

Abstract: DS442X
Contextual Info: SAf/YO Q u i c k G u i d e To Small afc Ver-y Fast. Swi t o h i ng Type No. Package Out 1ine No. :Marking General purpose Diodes Di o d e s Electrical Characteristics/Ta=25°C Absolute Maximum Ratings/Ta=25’C Features Signal Remarks VR 10 IFM (V) (mA)

marking L2 SOT23 6

Abstract: RF1 SOT-23 MARKING C6 SOT23 SMP1345-079LF SK4025 C7L3 Marking C6 SOT23-5 MARKING 518
Contextual Info: DATA SHEET SMP1345 Series: Very Low Capacitance, Plastic Packaged Silicon PIN Diodes Features Designed for high-isolation LNB, WLAN and wireless switch applications ● Very low insertion loss 0.4 dB ● 0.15 pF capacitance ● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 250 °C per

MARKING CODE G3

Abstract: diode code k5 MARKING CODE G5
Contextual Info: MMSZ5221B - MMSZ5259B 500mW SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 500mW Power Dissipation General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOD-123 Mechanical Data · · · · · · · · D H Dim

marking code f4 DIODE

Abstract: zener diode E2 zener diode J3 ZENER DIODE E1 zener diode j5 c5 marking code SOD-123 marking code 1200 marking code k1 J3 marking code marking code C5
Contextual Info: MMSZ5221B - MMSZ5259B 500mW SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 500mW Power Dissipation General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOD-123 Mechanical Data · · · · · · · · D H Dim

zener diode K4

Abstract: G1 E3 marking
Contextual Info: MMSZ5221B - MMSZ5259B 500mW SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 500mW Power Dissipation General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOD-123 Mechanical Data · · · · · · · · D H Dim

zener diode j5

Abstract: Zener diode marking code G4 zener diode E5 zener diode K4 zener diode code k1 Zener diode MARKING H5 Zener diode h5 marking j1 sod123
Contextual Info: MMSZ5221B - MMSZ5259B 500mW SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 500mW Power Dissipation General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOD-123 Mechanical Data · · · · · · · · D H Dim

Contextual Info: WTE POWER SEMICONDUCTORS MMSZ5221B – MMSZ5262B Pb 500mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 500mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

K5 marking code diode

Abstract: marking code diode K5 MMSZ5261B marking DIODE H5 c2
Contextual Info: WTE POWER SEMICONDUCTORS MMSZ5221B – MMSZ5262B Pb 500mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 500mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

MMSZ5262BS

Abstract: marking code diode K5 K5 marking code diode sod323 marking c2
Contextual Info: WTE MMSZ5221BS – MMSZ5262BS Pb POWER SEMICONDUCTORS 200mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 200mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

Contextual Info: WTE MMSZ5221BS – MMSZ5262BS Pb POWER SEMICONDUCTORS 200mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 200mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

Zener diode MARKING H5

Abstract: diode marking code H5 zener diode E2 MMSZ5258B marking code f4 DIODE MARKING CODE f5 5 lead marking code g5 zener MMSZ5242B Spice MARKING CODE f5 MMSZ5227B
Contextual Info: MMSZ5221B - MMSZ5259B 500mW SURFACE MOUNT ZENER DIODE SPICE MODELS: MMSZ5221B MMSZ5223B MMSZ5225B MMSZ5226B MMSZ5227B MMSZ5228B MMSZ5229B MMSZ5230B MMSZ5231B MMSZ5232B MMSZ5233B MMSZ5234B MMSZ5235B MMSZ5236B MMSZ5237B MMSZ5238B MMSZ5239B MMSZ5240B MMSZ5241B MMSZ5242B MMSZ5243B

SL5010

Abstract: SL5010P piezo ceramic transducer piezoceramic
Contextual Info: SL5010P Semiconductor TONE RINGER WITH BRIDGE DIODE Description The SL5010P is a bipolar IC designed to replace the mechanical bell in telephone sets. It generates two analog tones, and a warble frequency to drive either directly a piezo-ceramic transducer or a small loudspeaker in response to ringing signal on the telephone line.