C337 NEC Search Results

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC 2405

Abstract: c337 transistor MARKING G 3pin C337 MP-45G PC337
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

c337 nec

Abstract: nec 2405 pc337 NEC R18 C337 W C337 c337 transistor Usage of Three-Terminal Regulators NEC F75-100 C337 25
Contextual Info: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUIT PC337 3-TERMINAL NEGATIVE ADJUSTABLE REGULATOR PIN CONFIGURATION Marking Side DESCRIPTION μPC337HF, μPC337HF-AZ The μPC337 is an adjustable 3-terminal negative voltage regulator, which has 1.5 A for the output current. The output voltage

C337 W

Abstract: c337 nec PC337 C337 W 65 Pc337 nec C337 MP-45G PC337HF Q16Q17 C337 40
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

C337 W

Abstract: PC337 C337 C337 W 65 C337 25 C337 W 60 c337 nec PC337HF WS60-00-1 MP-45G
Contextual Info: データ・シート バイポーラ・アナログ集積回路 Bipolar Analog Integrated Circuit PC337 3 端子可変負出力電圧安定化電源回路 μPC337 は，出力電圧可変形の 3 端子負出力電圧安定化電源回路です。 2 個の外付け抵抗により，−1.3 V から−30 V までの範囲で出力電圧を自由に

v42254-a3346

Abstract: V42254-A3216-B309
Contextual Info: SBM 383 with soldering terminal Type B_ Soldering pins fo r printed circuits Soldering pins, straight Special features - Extremely wide range of applications for job lots in laboratories and for use in mass-produced equipment. Few tools required for wiring and assembly.

MMM7210

Abstract: AN3585 L302 inductor C338 EUROPE C338 c341 transistor diode c341 transistor c341 FR4 SUBSTRATE MICROSTRIP ANTENNA SHEET C342
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3585 Rev. 1.1, 07/2008 PCB Layout Design Guidelines for Radio Board Using the MC13853 LNA 1 Abstract Radio printed circuit boards PCB must effectively integrate the devices and other elements while avoiding

burndy Y39

Abstract: YAV4C-TC14-FXB
Contextual Info: f_ I SE208075 I_ I ACCOMMODATES 5_ I_ 5_ I_ “* DIMENSIONS STUD SIZE CATALOG NUMBER 1/2 YA30-TC12-FXB 2.76 1.20 ±.04 .56 4.04 .62 2.70 £55J £30] m [14] [103] [16] [69J — 263 KcmiL C650/24 — - 7/2 250 FLEX CLASS I,K,M

AN3585

Abstract: c337 transistor C338 c341 transistor MMM7210 C337 C339 C340 C341 C342
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3585 Rev. 1.1, 07/2008 PCB Layout Design Guidelines for Radio Board Using the MC13853 LNA 1 Abstract Radio printed circuit boards PCB must effectively integrate the devices and other elements while avoiding

DIODE SMD c336

Abstract: xcf025 xcf02sv020 b30 c300 DIODE cd c326 MOLEX 87832-1420 SMD fuse P200 xcf02sv020c smdc110f XCF025V
Contextual Info: High Speed Deserialization Board HSDB HSC-ADC-FPGA FUNCTIONAL BLOCK DIAGRAM MULTI-CHANNEL ADC EVALUATION BOARD POWER SUPPLY SERIAL LVDS PER ADC FILTERED ANALOG INPUT CLOCK CIRCUIT HSC-ADC-FPGA HSC-ADC-EVALA/B-DC +3V XILINX FPGA XC2V250 FIFO1 32k SPI CLOCK INPUT

XCF02SV020C

Abstract: Xilinx xcf02sv020c manual SMHU diode c329 JP105 xcf02sv020 C337 W 63 c338 pin details SMHU transistor c331
Contextual Info: High Speed Deserialization Board HSDB HSC-ADC-FPGA FEATURES FUNCTIONAL BLOCK DIAGRAM STANDARD USB 2.0 SERIAL LVDS HIGH SPEED ADC EVALUATION BOARD PS HSC-ADC-FPGA PS REG n FILTERED ANALOG INPUT Any high speed ADC evaluation board that supports serial LVDS digital output format

TI431

Abstract: transistor c331 TI430 u334 U433 CAN BUS SENSOR u233a transistor C438 c341 transistor D331 transistor
Contextual Info: 1 2 3 4 5 6 D D Processor Processor -RESET ALERT PHOTO_DET THERMISTOR CANRXA ADDR0 ADDR1 VREF165 -RESET ALERT PHOTO_DET THERMISTOR CANRXA ADDR0 ADDR1 VREF165 C +MTR_ON_LED MTR_MODE_LED +FAN_ON FAN_MODE_LED +HEATER_ON MTR_POS_0 MTR_POS_1 MTR_POS_2 MTR_POS_3

76M12

Abstract: u19 c629 c639 M21125 microwave inverter panasonic c86 sot23-8 smd m21 sot23 panasonic inverter microwave diode C646 PANASONIC C372
Contextual Info: M21125/M21115 Evaluation Module User Guide 21125-EVMD-001-A February 2009 Revision History Revision Date A February 2009 21125-EVMD-001-A Description Initial release Mindspeed Technologies Mindspeed Proprietary and Confidential 2 Contents 1.0 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

PSMN5R0-30YL

Contextual Info: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN7R0-30YL

Abstract: C337 40 w 22
Contextual Info: PSMN7R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

C337 w 79

Abstract: PSMN2R5-30YL
Contextual Info: PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 03 — 28 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN9R0-30YL

Contextual Info: PSMN9R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 5 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PH5030AL

Abstract: PH5030
Contextual Info: PH5030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN3R0-30YL

Contextual Info: PSMN3R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 28 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PH9030AL

Abstract: PH9030AL SOT669 PH9030A
Contextual Info: PH9030AL N-channel TrenchMOS logic level FET Rev. 07 — 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN6R0-30YL

Contextual Info: PSMN6R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 Januari 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN4R0-30YL

Contextual Info: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 31 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN3R5-30YL

Contextual Info: PSMN3R5-30YL N-channel TrenchMOS logic level FET Rev. 03 — 31 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in