C337 25 Search Results

DAC337

Abstract: converters c337 transistor transistor c337 C3372 C337 C337 W c337 transistor datasheet c33716 C3371
Contextual Info: D AC337 D ata Converter Line Adjustment-Free 8-Bit D ACs FEATURES • • • • No Zero Or Gain A djusts t/aLSB Linearity Internal Reference and Output A mplifier Low Power DESCRIPTION The DA C337 Series digital-to-analog converters are designed for completely adjustment-free operation.

74LVC125

Abstract: 0.015uF C337 25 R212 R213 R214 TP58 TP41 8b63 TP412
Contextual Info: D C B A 4 4 P0_D[15:0] P0_A[25:0] PCMCIA_CNTL GPIO_SIGS GPIO_2/LDD_8/P0_STSCHG# GPIO_3/LDD_9/P0_IREQ# RP4 U20B 74LVC125 11 U20B 74LVC125 8 12 9 13 10 S12 P0_SW_STSCHG# LCD_16/PCMCIA# P0_VCC R213 100k P0_RDY/IREQ# 3 P0_D[7] P0_D[6] P0_D[5] P0_D[4] P0_D[3] B8

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

Contextual Info: Document 105-1 Chip Inductors – 1812CS 4532 • Higher SRF values than 1812 size parts with ferrite cores • 5% tolerances for all values • 19 inductance values from 1.0 to 33 µH Inductance2 Part number1 (µH) 1812CS-102XJL_ 1.0 @ 7.9 MHz 1812CS-122XJL_ 1.2 @ 7.9 MHz

Contextual Info: Document 105-1 Chip Inductors – 1812CS 4532 •฀ •฀ 5%฀tolerances฀for฀all฀values •฀ 19฀inductance฀values฀from฀1.0฀to฀33฀µH Part number1 1812CS-102XJL_

Contextual Info: Document 105-1 Chip Inductors – 1812CS 4532 • Higher SRF values than 1812 size parts with ferrite cores • 5% tolerances for all values • 19 inductance values from 1.0 to 33 µH Inductance2 Part number1 (µH) 1812CS-102XJL_ 1.0 @ 7.9 MHz 1812CS-122XJL_ 1.2 @ 7.9 MHz

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC 2405

Abstract: c337 transistor MARKING G 3pin C337 MP-45G PC337
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

c337 transistor

Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340
Contextual Info: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

PSMN1R5-25YL

Contextual Info: PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN1R2

Abstract: PSMN1R2-25YL
Contextual Info: PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

133/ATMEL 230 24C04

Contextual Info: A R253 10K C308 10uF/6.3V 10K 5 DD30 BAV99 R259 +3.3VD R335 10K +3.3VD HD-VSW0 1 B COVER1 1 2 3 4 5 COVER1 47n 47n 47R C57 47R C58 3906 Q41 1 7 RGB0_RIN- RGB0_GIN- R252 47K C331 R249 C307 1n 100R Jupiter-RST 10uF/6.3V RESET ON_PANEL HOTPLUG 47n R126 R124 RGB0_BIN-

C337 W

Abstract: c337 nec PC337 C337 W 65 Pc337 nec C337 MP-45G PC337HF Q16Q17 C337 40
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

TI431

Abstract: transistor c331 TI430 u334 U433 CAN BUS SENSOR u233a transistor C438 c341 transistor D331 transistor
Contextual Info: 1 2 3 4 5 6 D D Processor Processor -RESET ALERT PHOTO_DET THERMISTOR CANRXA ADDR0 ADDR1 VREF165 -RESET ALERT PHOTO_DET THERMISTOR CANRXA ADDR0 ADDR1 VREF165 C +MTR_ON_LED MTR_MODE_LED +FAN_ON FAN_MODE_LED +HEATER_ON MTR_POS_0 MTR_POS_1 MTR_POS_2 MTR_POS_3

PSMN5R0-30YL

Abstract: jmb 363
Contextual Info: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN6R0-30YL

Contextual Info: PSMN6R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN3R0-30YL

Contextual Info: PSMN3R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN2R5-30YL

Contextual Info: PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

transistor c337

Abstract: PSMN1R7-30YL
Contextual Info: PSMN1R7-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN2R0-30YL

Contextual Info: PSMN2R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN4R0-30YL

Contextual Info: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN3R5-30YL

Contextual Info: PSMN3R5-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in