C330 TRANSISTOR Search Results
C330 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
C330 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
c330 TRANSISTORContextual Info: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303NM832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient |
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ctldm303n-m832dsctldm303nm832dstlm832ds54mm2+2 | |
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Contextual Info: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303NM832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient |
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ctldm303n-m832dsctldm303nm832dstlm832ds54mm2 | |
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Contextual Info: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver |
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ctldm303n-m832dstlm832ds54mm2 | |
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Contextual Info: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver |
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ctldm303n-m832dstlm832ds54mm2 | |
c331 transistorContextual Info: international ri“ HlRectifier P D -9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-ioss rating includes all 'tail" losses • Optimized for medium operating frequency 1 to |
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irgpc50m10khzc-333s54ss+4 | |
transistor c331
Abstract: c331 transistor transistor c332 transistor c333 IGBT 500V 35A 1RGPC50M package transistor c331
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10khzirgpc50mcircui-20c-333+9 | |
transistor c331
Abstract: c331 transistor IRGPC50M C329 transistor c332
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irgpc50m10khzo-247acc-334+4 | |
transistor c331
Abstract: c331 transistor ic901 IRGPC50M IGBT 500V 35A c331 ses
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irgpc50m10khzo-247acc-334+5 | |
transistor c331
Abstract: C 331 Transistor c331 transistor transistor c 331 IRGPC50M IGBT 500V 35A c331 ses
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irgpc50m10khzo-247acc-334+6 | |
1RF9510
Abstract: IRF9513 IRF9511 c328 diode IRF9510
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t0-220abc-329irf9510irf9511+7 | |
TRANSISTOR BC 384
Abstract: bc 357 transistor transistor BC 336 TRANSISTOR BC 413 transistor BC 310 TRANSISTOR BC 321 bc 357 transistor pin TRANSISTOR BC 256 transistor bc 318 BC347
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o-92fo-92bto-02melf-002+11 | |
MMA0204-50
Abstract: Zener C444 MMA-0204-50 C343 "zener diode" zener c346 C406 Zener BUF C221 diode c446 c343 diode motorola D402 user guide
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slea032tas5066-5121k6evmtas5066tas5121dkd+12 | |
B1603
Abstract: zarlink modem c330 TRANSISTOR BB555 SL2100 SL2101 ZL10100 TR3011 PHILIPS tuner schematic 115 ssb lob
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zl10100ds5736sl2100sl2101+7 | |
transistor c324
Abstract: c330 TRANSISTOR SAW201 TR3011 B1603 BB555 SL2100 SL2101 ZL10100 C318 transistor
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SL2101 Application
Abstract: transistor c342 c330 TRANSISTOR B1603 BB555 SL2100 SL2101 ZL10100 SAW201 1-13GHz
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zl10100ds5736sl2100sl2101+7 | |
bck-28
Abstract: TRANSFORMER bck zd103 lx6503 SWITCHING TRANSISTOR C144 PC101 optocoupler d313 TRANSISTOR equivalent DIODE zd101 sfh817a transistor D313 pin configuration
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tnd360/dsm02b-bhss-1-tbic300lx6503-idw+14 | |
south bridge SIS 968
Abstract: DECT mac 16qam-modulated d7810 ad640 linear technology catalog kevin DSP based sine wave inverter circuit diagram
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for367south bridge sis 968dect mac16qam-modulated+4 | |
C2625 transistor
Abstract: C5679 transistor TRANSISTOR C3675 C5679 C2655 NPN Transistor transistor c5855 c3746 transistor transistor c3746 transistor C4770 c5855
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c300-c4700c5600-c5800c2625 transistorc5679 transistor+8 | |
planar transformer theory
Abstract: 0805CS-060XMBC 0402CS-10NXJBX do33116p C337 w 79 a4490 0805CS-220XJBC DO3316C-334 MAX2620 SC4501
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p-4400-335rus-127486planar transformer theory0805cs-060xmbc+8 | |
transistor c114 estContextual Info: User's Guide SLOU366A – June 2013 – Revised July 2013 PurePathTM Console Motherboard This manual describes the operation of the PurePath Console Motherboard PPCMB , revision D. The PPCMB connects to device under test (DUT) boards. These can be evaluation modules (EVM) or |
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slou366atas5760xevmtransistor c114 est | |
1-450-358-11
Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
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ta-ve150rm-u1501-450-358-11si-18752+8 | |
RTCM-SC104 data format version 3.1
Abstract: RTCM-SC104 data format schematic diagram receiver satellite RTCM-SC104 V101 varicap diode nmea 0183 amplifier schematics power supply satellite receiver transistor c331 rtcm SC-104 specification version 2.1 message type 3 c337 transistor
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sna/um98008wgs-84rtcm-sc104 data format version 3.1rtcm-sc104 data format+8 | |
TRANSISTOR PHL 641
Abstract: MAX1987 2 Input NAND Schmitt Trigger with Open Drain Outp mb62xxxx transistor 1PN M0623 transistor H6C LCC-48C-A01 BO 180 gq102b7
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mb62xxxxmb60xxxxfpt-160p-m01f160001s-2c+15 | |
transistor bL P09
Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
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mb62xxxxmb60xxxxt-160pf160001s-2c+13 | |