C2458 NPN Search Results

C2458 NPN Result Highlights (5)

Part	Manufacturer	Description	Download
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet
TTC5712	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=3 A / hFE=400~1000 / VCE(sat)=0.14 V / tf=120 ns / PW-Mini	Datasheet
TPCP8512	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PS-8	Datasheet
2SC2873	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=2 A / hFE=70~240 / VCE(sat)=0.5 V / tf=0.1 μs / PW-Mini	Datasheet

C2458 NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
c2458 Abstract: c2458 npn C2458 bl c2458 gr Contextual Info: fr C2458 HUANDONG ELECTRO N ICS —NPN silicon — • ■±SWÌÉ: T a= 25°C ft ^ nr â UM îmmXffîfei I M feiä T'- & VcBO 50 V VcEO 50 V V ebo 5 V Ic 150 mA M m & m Pc 200 mW SE Tj 150 Tstg nr M (Ta=25°C ) V - 55-150 °C ft ^ m ¡M MX1Ê. M'hiS	OCR Scan	C2458 55MAX 100mA, c2458 c2458 npn C2458 bl c2458 gr	PDF

Catalog Datasheet

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c2458

Abstract: c2458 npn C2458 bl c2458 gr
Contextual Info: fr C2458 HUANDONG ELECTRO N ICS —NPN silicon — • ■±SWÌÉ: T a= 25°C ft ^ nr â UM îmmXffîfei I M feiä T'- & VcBO 50 V VcEO 50 V V ebo 5 V Ic 150 mA M m & m Pc 200 mW SE Tj 150 Tstg nr M (Ta=25°C ) V - 55-150 °C ft ^ m ¡M MX1Ê. M'hiS

OCR Scan

C2458 55MAX 100mA, c2458 c2458 npn C2458 bl c2458 gr

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