C2 SOT323 Search Results

bav99w A7S

Abstract: BAV99W VSO05561
Contextual Info: BAV99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

Marking a1s

Abstract: BAW56W VSO05561
Contextual Info: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

Contextual Info: SIEM ENS BAV 70W Silicon Switching Diode Array • For high speed switching applications >Common cathode C1/C2 _EL n r U 1 =A1 II Pin Configuration Q62702-A1030 CM Ordering Code A4s' < Marking BAV 70W CM Type Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode

VSO05561

Abstract: A7s marking diode
Contextual Info: BAV 99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV 99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-323 Maximum Ratings Parameter Symbol

VSO05561

Contextual Info: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage

Pin diode G4S

Abstract: VSO05561
Contextual Info: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1

BAV70W

Abstract: VSO05561 10TSV
Contextual Info: BAV70W Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

A1030 transistor

Abstract: Q62702-A1030 marking code a4s
Contextual Info: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage

a7s diode

Abstract: bav99w diode marking 355
Contextual Info: SIEMENS BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications TT Type Marking Ordering Code BAV 99W A7s IF Pin Configuration Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Parameter

BAT15-04W

Abstract: VSO05561 S8s marking
Contextual Info: BAT15-04W Silicon Schottky Diode Preliminary data 3
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type 2 1 VSO05561 C1/A2 3 1 2 A1 C2 EHA07181 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

15-04W

Abstract: VSO05561 marking s8s 1504w
Contextual Info: BAT 15-04W Silicon Schottky Diode Preliminary data 3 • DBS mixer applications up to 12 GHz • Low noise figure • Low barrier type 2 1 VSO05561 C1/A2 3 1 2 A1 C2 EHA07181 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BBY55-05W

Abstract: CT22 CT10 VSO05561 BBY55
Contextual Info: BBY55-05W Silicon Tuning Diode 3
Excellent linearity
High Q hyperabrupt tuning diode
Low series inductance
Designed for low tuning voltage operation 2 for VCO's in mobile communications equipment 1
Very low capacitance spread VSO05561 C1/C2 3 1 2

Q62702-A1031

Abstract: marking code AC sot 323 diode
Contextual Info: BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage

Contextual Info: SIEMENS BAS 125W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS 125-04W BAS 125-06W A1/A2 JZL III ET Cl C2 CHMT1I

Q62702-A1051

Abstract: A7S marking code A1051 Q62702A1051
Contextual Info: BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications Type Marking Ordering Code Pin Configuration BAV 99W A7s 1=A1 Q62702-A1051 2=C2 Package 3=C1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage

A1S diode

Abstract: Marking code jxs JXs sot marking code a1s marking 7S marking code AC sot 323 diode diode a1s
Contextual Info: SIEMENS BAW 56W Silicon Switching Diode Array •For high speed switching applications ■Common anode k l/A i m TJ U Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter

VSO05561

Abstract: diode bat 85
Contextual Info: BAT 15-05W Silicon Schottky Diode • DBS mixer applications up to 12 GHz 3 • Low noise figure • Low barrier type 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BBY66-05W

Abstract: VSO05561 diode A2 9 diode MARKING 354
Contextual Info: BBY66-05W Silicon Tuning Diode Preliminary data 3
High capacitance ratio
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation for VCO's in mobile communications equipment 2
Very low capacitance spread 1 C1/C2 3 1 2 A1 A2 VSO05561

DIODE T4 A1

Abstract: diode marking T4
Contextual Info: BBY 52-05W Silicon Tuning Diode Preliminary data 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking Ordering Code Pin Configuration

BBY53-05W

Abstract: VSO05561
Contextual Info: BBY53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY53-05W

VSO05561

Abstract: w1901
Contextual Info: BAV 70W Silicon Switching Diode Array 3 • For high-speed switching applications • Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV 70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Maximum Ratings Parameter Symbol

VSO05561

Contextual Info: BBY 52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 52-05W S2s Pin Configuration 1=A1 2=A2

VSO05561

Abstract: BBY52-05W
Contextual Info: BBY52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY52-05W S2s Pin Configuration 1=A1 2=A2 Package