C1F TRANSISTOR Search Results

200w dc applications

Abstract: 200w power amplifier QPP-026 H10895 xemod
Contextual Info: QPP-026 200W, 925-960MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-026 QuikPAC RF power module is a Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The power transistors are

AZP63

Abstract: AZEBP63Q
Contextual Info: AZEBP63Q Evaluation Board for AZP63 Low Phase Noise Buffers www.azmicrotek.com DESCRIPTION FEATURES The AZEBP63Q evaluation board is a multi-layer PCB assembly containing the AZP63 low phase noise buffer and supporting components. They provide an excellent platform for initial design verification and validation

AZP52

Abstract: AZP51 AZP54 AZEBP53Q AZP53
Contextual Info: AZEBP53Q Evaluation Board for AZP53 Low Phase Noise Buffers www.azmicrotek.com DESCRIPTION FEATURES The AZEBP53Q evaluation board is a multi-layer PCB assembly containing the AZP53 low phase noise buffer and supporting components. They provide an excellent platform for initial design verification and validation

Contextual Info: AZEBP63Q Evaluation Board for AZP63 Low Phase Noise Buffers www.azmicrotek.com DESCRIPTION FEATURES The AZEBP63Q evaluation board is a multi-layer PCB assembly containing the AZP63 low phase noise buffer and supporting components. They provide an excellent platform for initial design verification and validation

Contextual Info: AZEBP53Q Evaluation Board for AZP53 Low Phase Noise Buffers www.azmicrotek.com DESCRIPTION FEATURES The AZEBP53Q evaluation board is a multi-layer PCB assembly containing the AZP53 low phase noise buffer and supporting components. They provide an excellent platform for initial design verification and validation

ia2410

Contextual Info: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm

AS080447-33N

Abstract: l0422 IA2410 C22A c2f sot AS120252-9R3N IA4910 C2F SOT23 PD85006L-E PD85035S-E
Contextual Info: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm

MA4P7436-1141T

Abstract: AS080447-33N IA2410 AS120252-9R3N PD85006L-E SOT323-5 C1P SOT23 GRM42-6 COG c6p SOT23 PD85035s-e
Contextual Info: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Data brief Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A

C1f TRANSISTOR

Abstract: 200w Transistor rf transistor 200w QPP-025 class d 200w
Contextual Info: QPP-025 200W, 925-960MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-025 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The

C1f TRANSISTOR

Abstract: QPP-035
Contextual Info: QPP-035 200W, 851-866MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-035 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for SMR base stations. The

C1f TRANSISTOR

Abstract: QPP-033
Contextual Info: QPP-033 200W, 832-870MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-033 QuikPAC RF power module is an impedancematched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for CDMA base stations. The

QPP-035

Abstract: QPP-036
Contextual Info: QPP-036 200W, 851-866MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-035 QuikPAC RF power module is an impedancematched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for SMR base stations. The

QPP-034

Abstract: 200W AMPLIFIER
Contextual Info: QPP-034 200W, 832-870MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-034 QuikPAC RF power module is an impedancematched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for CDMA base stations. The

Contextual Info: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm

1206 SMD Capacitor types

Abstract: Nu SmD TRANSISTOR smd ss 5 transistor smd transistor c1c SMD Transistor SS F NPC1034 NCP1034 tranzistor smd NPN TRANZISTOR tranzistor smd KEY
Contextual Info: DN06041/D Design Note – DN06041/D NCP1034 Buck Converter Device NCP1034 Input Voltage 48 V ±20 % Output Voltage 5V Output Current 5A Description Voltage Topology ripple < 30 mV Buck I/O Isolation None Key Features This Design Note describes high voltage, high power

ic isl 887

Abstract: PC2710TB PC2709T C1E mmic NEC 718 MARKING Pa 6pin TRANSISTOR marking 1F 6pin C1f TRANSISTOR
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2710TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold.

STAP85050

Abstract: Multimeter service manual PD85006L-E "RF Power Amplifier" amplifier diagram C14A china mobile main board METAL DETECTOR circuit for make metal detector schematic schematic diagram power amplifier free download
Contextual Info: UM0890 User manual 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Introduction This user manual briefly describes the function and use of the STEVAL-TDR011V1 demonstration board. The board is a two-stage 50 W RF power amplifier which includes an output LPF low-pass

Contextual Info: 5V, SUPER MINIMOLD UPC2710TB MEDIUM POWER SI MMIC AMPLIFIER GAIN vs. FREQUENCY and TEMPERATURE FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package VCC = 5.0 V • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

ic isl 887

Abstract: P12152E PC2710TB VP15-00-3 UPC2710TB C1f TRANSISTOR
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2710TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold.

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT |iPC2710TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /XPC2710TB is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular

PC2710

Abstract: PC2710T P12152E PC2710TB PDC900M 38808
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2710T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.

PC2710TB

Abstract: MPC2710 C1f TRANSISTOR P12152E
Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT JU P C 2 7 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The //PC2710TB is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular

UPC2710TB-E3-A

Abstract: uPC2710 UPC2710T UPC2710TB
Contextual Info: 5V, SUPER MINIMOLD UPC2710TB MEDIUM POWER SI MMIC AMPLIFIER GAIN vs. FREQUENCY and TEMPERATURE FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package VCC = 5.0 V • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.