C144 E S J Search Results

CI44

Abstract: C144 marconi push-pull audio amplifier marconi company
Contextual Info: C 144/JULY 1954 A Twin Tetrode Type C144 a non i H F PO W E R A M P L IF IE R INDEX BOSS 6 . PINS O OS8" ON I OOÖ' P C. DIA. AT PIN General. A push-pull beam tetrode fitted w ith an indirectly heated cathode, suitable for use as an H F pow er am plifier at frequencies up to 200 M c/s.

scr inverter

Abstract: SCR Handbook, General electric a96 laser diode SCR Applications Handbook c14415 C144 c144 diode 12 volt dc to 220 volt ac inverter 1000 watts CI44 SCR Handbook
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 700 800 850 900 1000 1150 1500 R M S C U R R E N T -A M P E R E S

GE SCR 241

Abstract: C141C C144 2N3658 C141A 2N3649-53 C141D C144S C34B C34D
Contextual Info: INVERTER SGR’s MEDIUM CURRENT 25 TO 35 AMPERES C138 1 C 139 C144 GE TYPE C34 C140 C141 JE D E C — 2N 3649-53 2 N 3654-58 50-500 50-400 5 0-40 0 500-800 500*800 500-1000 25 35 35 35 35 35 1 KHz 25 26 26 26 26 35 5KHz . 26 26 22 22 32 18 30 — — —

inverter SCR

Abstract: GE SCR 241 2N3651 GE SCR 1000 dv 700 inverter GE SCR scr inverter C138 C139 C141
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO uV * IO fO o 400 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 700 800 850 9 0 0 1000 1150 1500 RMS C U R R E N T -A M P E R E S

DIODE 4005

Abstract: TXV-P
Contextual Info: HEWLETT-PACKARD-, 4447584 Sñ CMPNTS H EW L E T T - P A C K A R D » m » T | m 4M7SÖ4 CMPNTS 58C DOOS^ 02943 HIGH RELIABILITY BEAM LEAD PIN DIODE HEW LETT PACKARD 3 DT*Ô7*J5” TXVP-4005 Generic HPND-4005 Features QUALITY PERFORMANCE TESTED Test Program Patterned After MIL-S-19500

A139PR

Abstract: c144 diode SCR Handbook, General electric snubber A139 General electric SCR A139E A139ER A139M A139MR C138
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 !j 600 § 500 s 400 5 300 § 200 z H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D RECTIFIERS SELECTOR GUIDE 3000 V3

sec ka7805

Abstract: C144 ka7805 internal ckt diagram ntsc osd generator mixer ka7805 Y103 c143 On Screen Display Samsung Ka7805 diagram R172
Contextual Info: JAN. 1998 SPECIFICATION for KS5514B-XX SYSTEM LSI BUSINESS SAMSUNG ELECTRONICS CO. SPECIFICATION for KS5514B-XX CONTENTS Important Notice • FUNCTIONS - 3 • FEATURES - 3 • BLOCK DIAGRAM -

D 1991 AR

Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode
Contextual Info: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0

diode ge a40f

Abstract: SCR Handbook, General electric snubber A139PR SCR Handbook, General electric IN1188 A139E A40F GE SCR 1000 AMP 1N3909-13 1N5332
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N248& 1N 1 1 9 5 A- JEOEC 50B 98A GE TYPE SPECIFICATIONS 1N 215460 - * F M A V M ax. average forw ard current (1 phase oper­ ation) (A ) ^ R M (r e p ) M ax. repetitive peak reverse voltage (V ) @ T C = (°C ) 50 - - - A 40F

a96 laser diode

Abstract: scr inverter SCR Handbook, General electric SCR Applications Handbook c144 diode General electric SCR CI44 c14415 C144 sa C144M30M
Contextual Info: SCR I C144 I The General Electric Cl 44 Silicon Controlled Rectifier is a reverse blocking triode thyristor semiconductor device designed primarily for high-frequency power switching applications which requires blocking voltages from 500 to 800 volts and load currents up to 35 amperes RMS, at

General electric SCR

Abstract: General electric SCR manual SCR Inverter c-141 General electric SCR manual c141 c141c IC-141 GE SCR Manual scr c385 GE 12 volt 25 amp scr power supply
Contextual Info: C234, C235 GE TYPE C138 1 JEDEC ELECTRICAL SPECIFICATIONS VOLTAGE RANGE_ S M 0 0 _ _ 5 0 0 I800 C139 C140 C141 C144 - 2N3649-53 2N3654-58 - JOO ] m 50-400 50-400 5^6» FORWARD CONDUCTION Max. RMS on-state current @ TV = •t ( r m s ) 65°C, 50% duty (A)

Contextual Info: / T T S G S -T H O M S O N * 7 # . liüia@ [l[Liro©iD gi BYW 81 -50 -> 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE

A139N

Abstract: SCR Handbook, General electric snubber A139 A139 Series d 667 A139M C144 e s j A139ER STG-500 General electric SCR
Contextual Info: Fast Recovery Rectifier A139 I The General Electric Type A l39 Series of power rectifier diodes is designed for use in applications where a fast recovery rectifier diode is a necessity. The A139 is rated up to 10,000 Hertz. It is available in both forward and reverse polarity versions.

XC084

Abstract: CXC574 3122-X CXC190
Contextual Info: Fast Recovery D iodes ~ C a p s u le types Type ^RRM I f A V ^ F(RM S) Range @ T hs 55°C @ T.hs 25°C IF Typical Reverse Recovered Charge @ T hs25°C and Typical Reverse Recovery @ Tj Max. 10ms (50% Chord) V r« 6 0 % ^FSM (1) ^RRM (Note 3) (V) di/dt (Note 2)

TRANSISTOR C144

Abstract: SWITCHING TRANSISTOR C145 SWITCHING TRANSISTOR C144
Contextual Info: PD - 5.026 International ^R ectifier CPV362MF Fast IGBT IGBT SIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to 10kHz

C144 e s j

Abstract: 1RFD220 k 3525 MOSFET 1RFD223 nds 40 d223v MOSFET C144
Contextual Info: H E D | INTERNATI ONAL 4055452 □QQä3ci 2 5 | T-35-25 Data Sheet No. PD-9.417C RECTIFIER INTERNATIONAL RECTIFIER I « R HEXFET TRANSISTORS I R F D 2 S Q IRFD223 IM-CHAIMIMEL H E X O IP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE 200 Volt, 0.8 Ohm, 1-Watt HEXDIP

C144

Contextual Info: PA61 • PA61A APEX M ICROTLCHNOt OCY C O R P O R A I l OÍ J • APPLICATIONS HOTLINE B K i >4h APhX | BOO 546 -2739] FEATURES • • • • WIDE SUPPLY RANGE — ± 1 0 to ±45V HIGH OUTPUT CURRENT — ±10A Peak LOW COST — Class "C" output stage LOW QUIESCENT CURRENT — 3mA

Contextual Info: H M C143 H M C 144 M IC R O W AV E CO R PO R A TIO N GaAs MMIC TRIPLE-BALANCED MIXER 5 - 20 GHz FEBRUARY 1998 Features General Description CONVERSION LOSS: 10dB The HMC143 chip is a miniature triple-balanced mixer which can be used as an upconverteror downconverter. The HMC144

diode zener c72

Abstract: u34 diode C137 philips smt r100 resistor C143 led 10w PAL26V12 Philips zener diode ct2 diode U 34 C83 diode zener c55 C82 diode zener cr9
Contextual Info: Am186CC ISDN Router Reference Design Revised: Friday, April 09, 1999 Revision: 2.1 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials May 24,1999 Item Part 4700pF 0.022uF

Contextual Info: FUJITSU MICROELECTRONICS 7 ft D e J 37^ 7^5 O Q Q a W l | T"VC'2 2 ^ T Advanced Inform ation FU JITSU MOS Memories MB811001-12, MB811001-15 1,048,576-Bit Dynamic Random Access Memory Description The Fujitsu MB811001 is a fully decoded, dynamic NMOS random

SWITCHING TRANSISTOR C144

Abstract: C143 T transistor C143 E S S transistor SWITCHING TRANSISTOR C145 C143 E S e transistor transistor c143 ge c147 C143 E S j transistor C143 E S X transistor c143 transistor
Contextual Info: PD - 5.026 CPV362MF Fast IGBT IGBT SIP MODULE 1 Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to 10kHz

LELON rea

Abstract: A083 LELON electrolytic capacitor Product code guide C144 3pin e s t LELON D096 LS 1316 smd code m6 b083
Contextual Info: Aluminum Electrolytic Capacitors Part Numbering System Product Code Guide - Radial Type REA series 10 F ±20% 50V Lead Forming Tape REA 100 M 1H TA □□□ □□□ □ □□ □□ ① ② ③ ④ ⑤ Series Gas Type 5φx11L Pb-free Wire + PET Sleeve

ISS119

Abstract: 2SC2785-HFE v7020 2sc2785hfe rc4558p j9n99 25c2785 IC106 ic dl101 IC105
Contextual Info: C Sí£f!:J8«$ftTi-'S « S M % 36 ¥29,800 ¥ j3o tíP 1989£) 10/1 Bg mu fiííBímSt ffiffl/SS üigslJÏ a*«* tíx'TTAt¡ fx/ttati tsma tt 109x 132x 26.4mm (fi/»*/StÍ7S* 3HS^â*-r) fÛ200g t t- SU ' y v W ) 5‘C ~ 35’Û 259é~80% + 12V.+5V 1.2W

P628

Abstract: A733 C139 ks5520 p626 c143 On Screen Display Samsung ntsc osd generator mixer KS88P0016N on screen display
Contextual Info: VID - 97 - D001 JAN. 1998 SPECIFICATION for KS5520 SYSTEM LSI BUSINESS SAMSUNG ELECTRONICS CO. SPECIFICATION for KS5520 CONTENTS Important Notice • OUTLINE OF PRODUCT - 3 • FUNCTIONS - 3 • FEATURES -