C144 E S J Search Results

CI44

Abstract: C144 marconi push-pull audio amplifier marconi company
Contextual Info: C 144/JULY 1954 A Twin Tetrode Type C144 a non i H F PO W E R A M P L IF IE R INDEX BOSS 6 . PINS O OS8" ON I OOÖ' P C. DIA. AT PIN General. A push-pull beam tetrode fitted w ith an indirectly heated cathode, suitable for use as an H F pow er am plifier at frequencies up to 200 M c/s.

scr inverter

Abstract: SCR Handbook, General electric a96 laser diode SCR Applications Handbook c14415 C144 c144 diode 12 volt dc to 220 volt ac inverter 1000 watts CI44 SCR Handbook
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 700 800 850 900 1000 1150 1500 R M S C U R R E N T -A M P E R E S

GE SCR 241

Abstract: C141C C144 2N3658 C141A 2N3649-53 C141D C144S C34B C34D
Contextual Info: INVERTER SGR’s MEDIUM CURRENT 25 TO 35 AMPERES C138 1 C 139 C144 GE TYPE C34 C140 C141 JE D E C — 2N 3649-53 2 N 3654-58 50-500 50-400 5 0-40 0 500-800 500*800 500-1000 25 35 35 35 35 35 1 KHz 25 26 26 26 26 35 5KHz . 26 26 22 22 32 18 30 — — —

inverter SCR

Abstract: GE SCR 241 2N3651 GE SCR 1000 dv 700 inverter GE SCR scr inverter C138 C139 C141
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO uV * IO fO o 400 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 700 800 850 9 0 0 1000 1150 1500 RMS C U R R E N T -A M P E R E S

AD140

Contextual Info: SPECIAL APPLICATIONS I ._ R ecent im provem ents to this line de live r low er VSWR & b e tte r po w er transfers Denotes most popular models. Model Frequency

DIODE 4005

Abstract: TXV-P
Contextual Info: HEWLETT-PACKARD-, 4447584 Sñ CMPNTS H EW L E T T - P A C K A R D » m » T | m 4M7SÖ4 CMPNTS 58C DOOS^ 02943 HIGH RELIABILITY BEAM LEAD PIN DIODE HEW LETT PACKARD 3 DT*Ô7*J5” TXVP-4005 Generic HPND-4005 Features QUALITY PERFORMANCE TESTED Test Program Patterned After MIL-S-19500

A139PR

Abstract: c144 diode SCR Handbook, General electric snubber A139 General electric SCR A139E A139ER A139M A139MR C138
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 !j 600 § 500 s 400 5 300 § 200 z H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D RECTIFIERS SELECTOR GUIDE 3000 V3

SP571

Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
Contextual Info: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

sec ka7805

Abstract: C144 ka7805 internal ckt diagram ntsc osd generator mixer ka7805 Y103 c143 On Screen Display Samsung Ka7805 diagram R172
Contextual Info: JAN. 1998 SPECIFICATION for KS5514B-XX SYSTEM LSI BUSINESS SAMSUNG ELECTRONICS CO. SPECIFICATION for KS5514B-XX CONTENTS Important Notice • FUNCTIONS - 3 • FEATURES - 3 • BLOCK DIAGRAM -

D 1991 AR

Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode
Contextual Info: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0

C141C

Abstract: C141D C141A C148PB C149D C141A N C139 C144e C149 C144S
Contextual Info: INVERTER SCRs RICHARDSON/ N A T I O N A L EL bEE D N A T IO N A L T Y P E NO. VOLTAGE R A N G E Itm Peak on-state sinusoidal current @ Tc =65°C, 50% duty A • 7734*117 DQOObTM 150 C l 38 C139 C140 C141 C144 C148 C149 500-800 500-800 100-400 100-400 500-800

diode ge a40f

Abstract: SCR Handbook, General electric snubber A139PR SCR Handbook, General electric IN1188 A139E A40F GE SCR 1000 AMP 1N3909-13 1N5332
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N248& 1N 1 1 9 5 A- JEOEC 50B 98A GE TYPE SPECIFICATIONS 1N 215460 - * F M A V M ax. average forw ard current (1 phase oper­ ation) (A ) ^ R M (r e p ) M ax. repetitive peak reverse voltage (V ) @ T C = (°C ) 50 - - - A 40F

a96 laser diode

Abstract: scr inverter SCR Handbook, General electric SCR Applications Handbook c144 diode General electric SCR CI44 c14415 C144 sa C144M30M
Contextual Info: SCR I C144 I The General Electric Cl 44 Silicon Controlled Rectifier is a reverse blocking triode thyristor semiconductor device designed primarily for high-frequency power switching applications which requires blocking voltages from 500 to 800 volts and load currents up to 35 amperes RMS, at

General electric SCR

Abstract: General electric SCR manual SCR Inverter c-141 General electric SCR manual c141 c141c IC-141 GE SCR Manual scr c385 GE 12 volt 25 amp scr power supply
Contextual Info: C234, C235 GE TYPE C138 1 JEDEC ELECTRICAL SPECIFICATIONS VOLTAGE RANGE_ S M 0 0 _ _ 5 0 0 I800 C139 C140 C141 C144 - 2N3649-53 2N3654-58 - JOO ] m 50-400 50-400 5^6» FORWARD CONDUCTION Max. RMS on-state current @ TV = •t ( r m s ) 65°C, 50% duty (A)

MDR26

Abstract: MDR-26 MD49 c144 MD56 MDR14 MDR36 RP503 MD47 md62
Contextual Info: 1 2 3 4 5 6 7 +3V 144 PIN SODIMM SOCKET +3V MD0 MD1 MD2 MD3 +3V MD4 MD5 MD6 MD7 J5 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 51 53 55 57 59 MD0 MD1 MD2 MD3 MDR[0.63] RP508 RP10*8 RP_16P8R_4016 RP507 RP10*8 RP_16P8R_4016 RP502 RP10*8

AD140

Contextual Info: DUAL BAND & SPECIAL APPS With A N T E N E X * dual band antennas, you will experience outstanding performance on both the VHF and UHF bands. Our m anufacturing techniques exercise tight control over all the parameters necessary to build a mobile gain antenna for outstanding

Contextual Info: / T T S G S -T H O M S O N * 7 # . liüia@ [l[Liro©iD gi BYW 81 -50 -> 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE

A139N

Abstract: SCR Handbook, General electric snubber A139 A139 Series d 667 A139M C144 e s j A139ER STG-500 General electric SCR
Contextual Info: Fast Recovery Rectifier A139 I The General Electric Type A l39 Series of power rectifier diodes is designed for use in applications where a fast recovery rectifier diode is a necessity. The A139 is rated up to 10,000 Hertz. It is available in both forward and reverse polarity versions.

SWITCHING TRANSISTOR C144

Abstract: TRANSISTOR C144 LQ10D311 C144 TRANSISTOR c144 TRANSISTOR D640 DG136 D639 D639 TRANSISTOR QZ-19-3F01
Contextual Info: LQ10D311 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 10.4" The SHARP LQ10D311 Color TFT-LCD module is an active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel,

SWITCHING TRANSISTOR C144

Abstract: C144 transistor transistor c144 ge c147 c144 diode C144 e s j
Contextual Info: PD - 5.026 International iür]Rectifier CPV362MF Fast IGBT IGBTSIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to 10kHz

MIP0224SY

Abstract: 2SK1937 t201 transformer M51995AFP mip0224 ZUP-200 Nemic-Lambda CN d1fl20u 0134G ZUP20
Contextual Info: ZUP-200 SERIES RELIABILITY DATA DWG: 1A548-79-01 QA APPD APPD CHK DWG ç> ^ ^ A WR/llMAQciifltfi,Do^ovv PeUl c.y. ’hi/ ji j ci ‘I &3. S/ ÜOV-l-Lô<i fjn/~ &NEMIC-LAMBDA LTD. INDEX 1.MTBF; Calculated Value of MTBF R-1 2.Component Derating R-2-12 3.Main Components Temperature Rise

XC084

Abstract: CXC574 3122-X CXC190
Contextual Info: Fast Recovery D iodes ~ C a p s u le types Type ^RRM I f A V ^ F(RM S) Range @ T hs 55°C @ T.hs 25°C IF Typical Reverse Recovered Charge @ T hs25°C and Typical Reverse Recovery @ Tj Max. 10ms (50% Chord) V r« 6 0 % ^FSM (1) ^RRM (Note 3) (V) di/dt (Note 2)

C144

Abstract: 5a6v
Contextual Info: PV/PVD SERIES " i n s t r t a ' , .5* K««*K*K S & r i& s ^ FZP T T d&M sm '' n '</ , * ? ' - -‘•'^V^AyiV ^V.yAV^VV /AV .V.V AV.ViV.V .'.V .V.V.'-V .'iV.V .V.VÂvV .VA V/.V v* c t i o n A / « / / « « / BEFO RE USING THE POW ER SUPPLY UNIT Pay attention to all warnings and cautions before using the unit.

TRANSISTOR C144

Abstract: SWITCHING TRANSISTOR C145 SWITCHING TRANSISTOR C144
Contextual Info: PD - 5.026 International ^R ectifier CPV362MF Fast IGBT IGBT SIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to 10kHz