C125 DIODE Search Results

Contextual Info: Revised March 1999 S E M IC O N D U C T O R T M cuit prevents device destruction due to m ism atched supply and input voltages. General Description The VH C125 contains fo u r independent non-inverting buff­ ers with 3-STATE outputs. It is an advanced high-speed

AHCT03

Contextual Info: S A M S U N G S E M I C O N D U C T O R INC OE DE| 7^4142 □ □ □ S c125 S | T-V3-ZÎ KS54AHCT M KS74AHCT w " FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with These devices contain four independent 2-input NAND gates with open-drain outputs. Using a suitable pull-up

IGBT 60A 1200V

Abstract: IGBT 1200V 60A IRGB5B120KDPBF TO-220aB rr
Contextual Info: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

PWM push button switch

Abstract: ST microelectronics 36v DC MOTOR SPEED CONTROLLER schematic con8a CON5X2 74HC125 R65C29 STPS3L60U SABRE con5x
Contextual Info: ST Microelectronics SABRe demo board 2 manual SABRe demo board 2 manual How to. .connect the board supply, loads and interface it to a PC .configure the demo board .run the software .turn on VswDrv regulator .turn on DC1 and DC2 motor drivers .assign and read a Gpio

78996

Abstract: ci 4538 12v to 220 v ac inverter IC 4538 IC td 4538 GB15RF120K application of IC 4538
Contextual Info: PD - 94571 GB15RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics

GB25RF120K

Contextual Info: PD - 94552 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics

Contextual Info: -Æ tttran MEDIUM VOLTAGE, FAST RECOVERY Devices. Inc. CHIP NUMBER PIM EPITAXIAL FAST RECOVERY PLANAR POWER DIODE dfì CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold Polished silicon or "Chrom e Nickel Silver" also available Mso available on:

c125 diode

Contextual Info: 8368602 SOLITRON DEVICES ^aiitron Devices. Inc. TS INC 95D 02 916 D T- DE|fl3bflbDE DDGaTlt A |~~ ò j ~;7 £ÏÏFÆ\[l MEDIUM VOLTAGE, FAST RECO VERY PN EPITAXIAL FAST R ECO V ER Y PLANAR POW ER DIODE CHIP N UM BER CONTACT METALLIZATION Anode: > 50,000 A Aluminum

mosfet 1200V 40A

Abstract: 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A
Contextual Info: PD- 94295 IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C VCES = 1200V Features • • • • • Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE on Temperature Coefficient.

ECONO2-6PACK IGBT module

Abstract: IC 7425 datasheet IR E78996 IR E78996 105 IRF E78996 E78996 IR ic 4075 datasheet or gate GB35XF120K
Contextual Info: PD - 94570 GB35XF120K IGBT 6PACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics

ECONO2-6PACK IGBT module

Abstract: IR E78996 GB50XF120K IGBT 6PACK MODULE IRF E78996 E78996 IR GB50XF120K ECONO-2
Contextual Info: PD - 94567 GB50XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient

A 3150 igbt driver

Abstract: IR E78996 IRF E78996 ECONO2-6PACK IGBT module ir igbt 1200V 40A igbt qualification circuit E78996 IR GB25XF120K
Contextual Info: PD - 94569 GB25XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient

HD74LVC125A

Abstract: Hitachi Scans-001 vc125a
Contextual Info: HD74LVC125A Quad. Bus Buffer Gates with 3-state Outputs HITACHI ADE-205-108B Z 3rd Edition December 1996 Description The HD74LVC125A has four bus buffer gates in a 14 pin package. The device require the three state control input C to be taken high to put the output into the high impedance condition, whereas the device

Contextual Info: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having

transistor D 5032

Abstract: 12 H 595 IRGPS60B120KD igbt 60a IGBT 900v 60a A1508 IGBT 1200V 60A Ir 900v 60a IRFPS37N50A 120A8
Contextual Info: PD- 94239B IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

M74HC125

Contextual Info: M54/74HC125 M54/74HC126 SGS-THOMSON 10 QUAD BUS BUFFERS 3-STATE HIGHSPEED tPD = 8 ns (TYP.) AT Vcc = 5 V LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT 25 °C OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS BALANCED PROPAGATION DELAYS tP L H = t P H L SYMMETRICAL OUTPUT IMPEDANCE

PM9080

Abstract: FLUKE-199C/003S SCOPEMETER Fluke Scopemeter 196C fluke series 2 DIODE TEMP
Contextual Info: 78-2012:QuarkCatalogTempNew 8/13/12 1:57 PM Page 78 Hand Held Oscilloscopes ScopeMeter ScopeMeter® Selection Guide Mfr.'s Type Bandwidth Max Real Time Sample Rate Max Record Length per input Number of Inputs Input Sensitivity Independently Isolated Floating Inputs

IRGB5B120KD

Abstract: TF010
Contextual Info: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

L 10mH

Contextual Info: PD - 94386A IRGP8B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGB5B120KD

Contextual Info: PD - 94385E IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

IRGB5B120KDPBF

Contextual Info: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

ir igbt 1200V 10A

Abstract: IRF 725 IRGP8B120KD-E
Contextual Info: PD - 94386 IRGP8B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IGBT 1200V 60A

Contextual Info: PD- 95913 IRGPS60B120KDP INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.