C11745E Search Results

d1308

Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NNCD5.6LG

Abstract: C10535E C11531E IEC10000 IEC1000-4-2
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODES NNCD5.6LG to NNCD6.8LG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSIONS This product series is a low capacitance type diode developed (in millimeters)

NNCD6.8G

Abstract: NNCD3.9G NNCD5.6G IEC1000 IEC1000-42 IEC1000-4-2 NNCD27G C10535E C11531E D1164
Contextual Info: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3G to NNCD7.5G, NNCD27G ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE : COMMON ANODE 5 PIN MINI MOLD PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on

d1308

Abstract: D1297 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

IEC1000

Abstract: IEC1000-42 IEC1000-4-2 NNCD10E NNCD11E NNCD12E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

a1037

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODES NNCD5.6LG to NNCD6.8LG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSIONS This product series is a low capacitance type diode developed for ESD (Electrostatic Discharge) absorption.

pa1556ah

Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Contextual Info: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET

C10535E

Abstract: C11531E IEC10000 IEC1000-4-2
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODES NNCD5.6LH to NNCD6.8LH LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD PACKAGE DIMENSIONS This product series is a low capacitance type diode developed

2SK2941

Abstract: C10535E C10943X C11531E MEI-1202 MP-25 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is n-Chanel MOS Field Effect Transistor designed high inmillimeters current switching application. RDS on 1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A)

smd diode 74a

Abstract: IEC1000-4-2 uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915
Contextual Info: E.S.D NOISE CLIPPING DIODE SERIES November 1998 E.S.D NOISE CLIPPING DIODES The absorption device for Electrostatic Discharge and Surge NNCD is the diode developed for the absorption device for ESD Electrostatic Discharge and surge. Recently, necessity of complying with the EMC (Electromagnetic Compatibility) regulation

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC NNCD4.7A

Abstract: IEC1000 IEC1000-42 IEC1000-4-2 NNCD10A NNCD11A NNCD12A MEI-1201
Contextual Info: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3A to NNCD12A ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE This product series is a diode developed for E.S.D (Electrostatic PACKAGE DIMENSIONS Discharge) noise protection. Based on the IEC1000-4-2 test on

Contextual Info: DATA SHEET SHEET DATA MOS FIELD EFFECT POWER TRANSISTORS µPA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transis- in millimeter tor designed for power management applications of

transistor 2SK2941

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T his product is n-Chanel MOS Field Effect Transistor designed high current switching application. FEATURE • Low On-Resistance RDS on i = 14 m il Typ. (V g s = 10 V, Id =18 A)

Contextual Info: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3D to NNCD12D ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on

d1297

Abstract: d1308 2SK2357 2SK2358 C10535E C11531E
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor in millimeters designed for high voltage switching applications.

2SK2941

Abstract: C10535E C10943X C11531E MEI-1202 MP-25 TEA-1035
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NNCD4.7D

Abstract: NNCD5.6D C11531E IEC1000 IEC1000-42 IEC1000-4-2 NNCD10D NNCD11D NNCD12D
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

C10535E

Abstract: C10943X C11531E MEI-1202 PA1700A TEA-1035
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3A to NNCD12A ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE T h is p ro d u ct s e rie s is a d iod e d e v e lo p e d fo r E .S .D (E le c tro s ta tic D isch a rg e ) no ise p ro te ctio n . PACKAGE DIMENSIONS

NNCD12B

Abstract: IEC1000 IEC1000-42 IEC1000-4-2 NNCD10B NNCD11B
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid