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    C106 SENSITIVE GATE Search Results

    C106 SENSITIVE GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54S133/BEA
    		Rochester Electronics LLC 54S133 - NAND GATE, 13-INPUT - Dual marked (M38510/07009BEA) PDF Buy
    54ACTQ32/QCA
    		Rochester Electronics LLC 54ACTQ32 - OR Gate, ACT Series, 4-Func, 2-Input, CMOS, - Dual marked (5962-8973601CA) PDF Buy
    5409/BCA
    		Rochester Electronics LLC 5409 - AND GATE, QUAD 2-INPUT, WITH OPEN-COLLECTOR OUTPUTS - Dual marked (M38510/01602BCA) PDF Buy
    54HC30/BCA
    		Rochester Electronics LLC 54HC30 - 8-Input NAND Gates - Dual marked (M38510/65004BCA) PDF Buy
    54F21/BCA
    		Rochester Electronics LLC 54F21 - AND GATE, DUAL 4-INPUT - Dual marked (5962-8955401CA) PDF Buy

    C106 SENSITIVE GATE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    c106mg pin out

    Abstract: C106DG C106MG C106M1G scr c106bg scr c106mg scr C106DG C106BG C106X C106D
    Contextual Info: C106 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is


    Original     		C106/D c106mg pin out C106DG C106MG C106M1G scr c106bg scr c106mg scr C106DG C106BG C106X C106D PDF

    C106D1

    Abstract: scr C106 scr C106B c106 scr SCR C106D1 c106d pin out circuit using c106d1 SCR C106D SCR C106m C106
    Contextual Info: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is


    Original     		C106B, r14525 C106/D C106D1 scr C106 scr C106B c106 scr SCR C106D1 c106d pin out circuit using c106d1 SCR C106D SCR C106m C106 PDF

    SCR C106D1

    Abstract: scr C106 scr C106B c106d pin out Application of scr c106D SCR C106D SCR C106m C106B C106D C106D1
    Contextual Info: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is


    Original     		C106B, r14525 C106/D SCR C106D1 scr C106 scr C106B c106d pin out Application of scr c106D SCR C106D SCR C106m C106B C106D C106D1 PDF

    scr C106

    Abstract: C106Y1 equivalent equivalent SCR c106 c106b1 equivalent SCR C106Y1 SCR TRIGGER circuit dc charger ge c106b1 c106 scr SCR C203 SCR 406J
    Contextual Info: C 103 C203 - 2 N 50 6 0-64 30-200 3 0 400 ?5 400 05 0.8 0 .3 2 * 85 C 0.50 @ 25’ C tlllS lIlt 0 50 @ 2 5 3C- 1.0 < 85° C C3 GE TYPE 2 N 8 7 7 -8 1 "1 JEDEC C5 2N 2322-29 C6 07 - 2N 2 344-48 25-400 25-200 - C106 C107 C 108 - - - 50 4 00 15-600 1 *« K .


    OCR Scan     		2N877-81 2N5060-64 2N2322-29 2N1595-99 X45-REF scr C106 C106Y1 equivalent equivalent SCR c106 c106b1 equivalent SCR C106Y1 SCR TRIGGER circuit dc charger ge c106b1 c106 scr SCR C203 SCR 406J PDF

    scr C106

    Abstract: c106 scr equivalent SCR c106 GE scr C106 GE C106F2 SCR C106Y1 CI06 SCR C106Y1 terminal SCR 406J C106B2
    Contextual Info: Silicon Controlled Rectifier Flat Pack Design Model C106 Up to 600 Volts 4 Amperes RMS o PRO D U C T FEATURES The Type C106 Silicon Controlled Rectifier (SCR) has the following outstanding featu res: o Cl 06 TYPE 4 LOW COST Cl 06 TYPE 2 O perates directly fro m low signal


    OCR Scan     		X45-REF scr C106 c106 scr equivalent SCR c106 GE scr C106 GE C106F2 SCR C106Y1 CI06 SCR C106Y1 terminal SCR 406J C106B2 PDF

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


    Original     		PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147 PDF

    MCR706AT4G

    Contextual Info: MCR703A Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is


    Original     		MCR703A MCR706A1 MCR706AT4G PDF

    capacitor marking c106

    Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
    Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA PDF

    R2213

    Abstract: skyper 42
    Contextual Info: Board 2// 4S SKYPER 42 R - Technical Explanations Adaptor Board 2 parallel 4S SKYPER® 42 R Technical Explanations Revision 04 -This Technical Explanation is valid for the following parts:


    Original     		L5059801 Rev04 R2213 skyper 42 PDF

    LM78L05ACM-ND

    Abstract: LM78L05ACMND C210 TL122
    Contextual Info: PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced


    Original     		PTFA091203EL PTFA091203EL 120-watt, H-33288-6 LM78L05ACM-ND LM78L05ACMND C210 TL122 PDF

    RO6006

    Abstract: TRANSISTOR c105 capacitor 6800 uf r812 R809 PTVA101K02EV 011022 1030-1090MHz SK101M100ST
    Contextual Info: PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with


    Original     		PTVA101K02EV PTVA101K02EV H-36275-4 RO6006 TRANSISTOR c105 capacitor 6800 uf r812 R809 011022 1030-1090MHz SK101M100ST PDF

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND PDF

    dpak 369C

    Abstract: 369D C106 MCR703A MCR703AT4 MCR703AT4G MCR706A MCR706A1 MCR708A
    Contextual Info: MCR703A Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is


    Original     		MCR703A MCR706A1 MCR703A/D dpak 369C 369D C106 MCR703AT4 MCR703AT4G MCR706A MCR706A1 MCR708A PDF

    TL2012

    Abstract: TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221
    Contextual Info: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL2012 TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221 PDF

    bty79 scr

    Abstract: SCR c106 PIN CONFIGURATION thyristor bt106 BT106 RS3423 c106 scr 2n4444 ARE 3423 BTX18-400 50026
    Contextual Info: Issued March 1997 232-2302 Data Pack J Overvoltage protector 3423 Data Sheet RS stock number 307-890 This overvoltage protection circuit OVP protects sensitive electronic circuitry from overvoltage transients or regulator failures when used in conjunction with an external “crowbar” SCR The


    Original     		PDF

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242 PDF

    42756 regulator

    Abstract: 42756 C207 capacitor j146 1300 transistor
    Contextual Info: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with


    Original     		PTVA123501EC PTVA123501EC H-36248-2 42756 regulator 42756 C207 capacitor j146 1300 transistor PDF

    12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Abstract: Amplifier 1000w schematic diagrams schematic diagram dc inverter 1000W SCHEMATIC 1000w inverter SCHEMATIC 1000w power amplifier stereo 1000W power amplifier schematic diagrams 12v 1000W AUDIO AMPLIFIER 500w power amplifier circuit diagram 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 500w audio power amplifier circuit diagram
    Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TA0105A-1 RB-TA0105A-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Rev. 1.1 November 2004 GENERAL DESCRIPTION The RB-TA0105A reference board is based on the TA0105A digital audio power amplifier driver from


    Original     		RB-TA0105A-1 RB-TA0105A-2 RB-TA0105A TA0105A RB-TA0105A, RB-TA0105A-1 /-60V /-93V 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM Amplifier 1000w schematic diagrams schematic diagram dc inverter 1000W SCHEMATIC 1000w inverter SCHEMATIC 1000w power amplifier stereo 1000W power amplifier schematic diagrams 12v 1000W AUDIO AMPLIFIER 500w power amplifier circuit diagram 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 500w audio power amplifier circuit diagram PDF

    DM0365

    Abstract: dm0365r opto d207 DVD player circuit diagram for smps power supply EER-2828 dvd player smps EER2828 BOBBIN EER2828 DL0365 dl0365r
    Contextual Info: www.fairchildsemi.com FSDL0365RNB, FSDM0365RNB Green Mode Fairchild Power Switch FPSTM Features • Internal Avalanche Rugged Sense FET • Consumes only 0.65W at 240VAC & 0.3W load with Advanced Burst-Mode Operation • Frequency Modulation for EMI Reduction


    Original     		FSDL0365RNB, FSDM0365RNB 240VAC DM0365 dm0365r opto d207 DVD player circuit diagram for smps power supply EER-2828 dvd player smps EER2828 BOBBIN EER2828 DL0365 dl0365r PDF

    tl241

    Abstract: TL239 TRANSISTOR tl131 7827 Transistor TL131 TL245 P100ECT-ND tl113 445-1474-2-ND TL235
    Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6, H-34288-6, tl241 TL239 TRANSISTOR tl131 7827 Transistor TL131 TL245 P100ECT-ND tl113 445-1474-2-ND TL235 PDF

    DM0265R

    Abstract: DM0265 DVD player circuit diagram for smps power supply dvd player smps FSDM0265RNB opto d207 5D-9 ntc EER-2828 universal DVD player circuit diagram EER2828
    Contextual Info: www.fairchildsemi.com FSDM0265RNB Green Mode Fairchild Power Switch FPSTM Features • Internal Avalanche Rugged Sense FET • Consumes only 0.65W at 240VAC & 0.3W load with Advanced Burst-Mode Operation • Frequency Modulation for EMI Reduction • Precision Fixed Operating Frequency


    Original     		FSDM0265RNB 240VAC DM0265R DM0265 DVD player circuit diagram for smps power supply dvd player smps FSDM0265RNB opto d207 5D-9 ntc EER-2828 universal DVD player circuit diagram EER2828 PDF

    GE C6B

    Abstract: GE C6F SCR C103 GE C6U specifications 2N1597 scr C203 GE C106B1 GE C5U scr c5u GE C106A1
    Contextual Info: C 103 C203 - 2 N 50 6 0-64 30-200 3 0 400 ?5 400 05 0.8 0 .3 2 * 85 C 0.50 @ 25’ C tlllS lIlt 0 50 @ 2 5 3C- 1.0 < 85° C GE TYPE C3 2 N 8 7 7 -8 1 "1 JEDEC ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION 30-200 •t r m s :i Max. RMS on-state current (A


    OCR Scan     		2N877-81 2N5060-64 2N2322-29 2N1595-99 GE C6B GE C6F SCR C103 GE C6U specifications 2N1597 scr C203 GE C106B1 GE C5U scr c5u GE C106A1 PDF

    dm0365r

    Abstract: DVD player circuit diagram for smps power supply dl0365r SCHEMATIC DIAGRAM SMPS 12v 2A dm0365r ic dm0365r EER-2828 DM0365 FET marking code .N5 dvd player smps EER2828
    Contextual Info: www.fairchildsemi.com FSDL0365RN, FSDM0365RN Green Mode Fairchild Power Switch FPSTM Features • Internal Avalanche Rugged Sense FET • Consumes only 0.65W at 240VAC & 0.3W load with Advanced Burst-Mode Operation • Frequency Modulation for EMI Reduction


    Original     		FSDL0365RN, FSDM0365RN 240VAC dm0365r DVD player circuit diagram for smps power supply dl0365r SCHEMATIC DIAGRAM SMPS 12v 2A dm0365r ic dm0365r EER-2828 DM0365 FET marking code .N5 dvd player smps EER2828 PDF

    SCHEMATIC DIAGRAM SMPS 12v 2A dm0365r

    Abstract: zener diode 4148 code DM0365R DM0365
    Contextual Info: www.fairchildsemi.com FSDL0365RN, FSDM0365RN Green Mode Fairchild Power Switch FPSTM Features • Internal Avalanche Rugged Sense FET • Consumes only 0.65W at 240VAC & 0.3W load with Advanced Burst-Mode Operation • Frequency Modulation for EMI Reduction


    Original     		FSDL0365RN, FSDM0365RN 240VAC SCHEMATIC DIAGRAM SMPS 12v 2A dm0365r zener diode 4148 code DM0365R DM0365 PDF