C102 M Search Results

C102 M

Abstract: c102 c102m transistor c102 KRC102M C102 transistor C102 M transistor Transistor KRC102M c102, transistor KRC102M transistor
Contextual Info: SEMICONDUCTOR KRC102M MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking 2. Marking C102 M No. Item 816 Marking 1 Description C102 Device Name KRC102M 2 3 98.06.23 M Revision No : 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 816 Lot No.

C102 M

Abstract: transistor c102 C102 M transistor C102 C102 transistor PDB-C102 c102 symbols
Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Type PDB-C102 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] WINDOW CAP WELDED Ø0.184[4.67] 0.150[3.81] 0.040[1.02] Ø0.155[3.94] 0.060[1.52] WIRE BONDS C L 0.500 [12.70] MIN 45° C L Ø0.210[5.33]

transistor c102

Abstract: C102 M C102 transistor c102 PDB-C102-I
Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Isolated Type PDB-C102-I DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] Ø0.184 [4.67] WINDOW CAP WELDED Ø0.155 [3.94] 0.198 [5.03] 0.125 [3.18] WIRE BONDS 0.500 [12.70] MIN Ø0.100 B.C. PHOTODIODE CHIP

C102

Abstract: c102 voltage
Contextual Info: Technical form: C102 Description: Technical characteristics: Cond Number Nominal Section 2 x 0,75 mm² Formation 24 x 0,20 External Dimension mm 2,2 x 4,5 Conductor Resistance Ohm/Km ±5% 32 Operative Temperature (°C) -15°/+70° Max operative Voltage V

atm 194

Contextual Info: V23806-A8-C102 Multimode 1300 nm LED Fast Ethernet/FDDI/ATM 10 dB 155 MBd Transceiver with Isolated Stud Pins Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) (7.42−0.15) .292−.006 Optical Centerline (2) .080

Densei-Lambda PH50S

Abstract: C102 transistor transistor c102 PH50S PH50S110
Contextual Info: DENSEI-LAMBDA PH50S110 SPECIFICATION C102-01-01B MODEL ITEMS PH50S PH50S PH50S PH50S PH50S 110-5 110-12 110-15 110-24 110-28 1 Nominal Output Voltage V 5 12 15 24 28 2 Maximum Output Current A 10 4.2 3.4 2.1 1.8 W 50 50.4 51 50.4 50.4 % 80 82 83 84 84 0.55

EVK1100

Abstract: 100n J63 EL15-21UGC Q13FC1450000614 MUSB-05-F-AB-SM-A AT32UC3A0512-0ESAL EVK1100 PWM lcd 1x16 green J3026G01DNLT 1X4 pin HEADER
Contextual Info: 5 4 3 2 1 NM : Not Mounted 133 132 125 124 86 85 PC5 PC4 PC3 PC2 PC1 PC0 TP71 TESTPAD R18 0R B C122 2.2u 470p JTAG0 JTAG1 JTAG2 JTAG3 VCC3 R1 10k C RESETn JTAG[3.0] 4 SW1 SKRAALE010 2 VDDIN VDDCORE VDDCORE NC CLOCK Circuitry C101 C102 C103 C104 C117 C118 C119 C120

78L12CP

Abstract: 2SK44SP IC104 2Sc536 MN3101 MC78L12CP TL022 W03C RD12EB MN-3101
Contextual Info: ICKM J TL022 £102 JNE570 ICK» ÍMN3007 •C104 : m N3K 1 ICIOS :MC78ü2Cf AD1001A R104 1K í C1C3 470P io 0 6 ^1 0 8 O K M 'V K » : 2SM4SP 0 101^104 IMA15C YEL. INPUT BLU. C102 R101 .0471 7 MN3 0 0 5 IC 103 4 IC 102 3 6 2 8 kvr' oj GALANC*'r 122 R123 r 124

BU102

Abstract: CB114 p513 TLE6250G 100n X2 p514 D1034 DU102 D103 R120
Contextual Info: 2 R113 2 C101 47µF/50V GND +5V R101 330R 100K R116 GND GND Q1 I2 8 Q2 SI R115 SO 22K 2 INH 5 WDI GND R118 10 +2V6 R119 0R 0R +5V R133 4 GND GND +5V 0R RO /RSTIN P3.5 C102 22µF/10V 10K R121 7 +5V GND C103 22µF/10V 9 GND R135 2 /RSTIN X2 P3.10 R153 JP103

sff-8431

Abstract: Transceivers
Contextual Info: TRANSCEIVERS Product Specification Multirate up to 8.5GBd Limiting Transceivers TRX08GDP0410 General Description and Applications MergeOptics SFP+ LW is a multipurpose multi-rate optical transceiver module for transmission at 1310nm over single mode fiber. Supporting Fibre Channel standards make it ideally suited for storage area network applications. Its sub watt

Contextual Info: . 40E D 34=n?3fl 000124fl 4 S E N I FASCO INDS/ SENISYS ' •' • • —HJ uv V i.'J.-W -v,'- • ■■ . irj-iW.hVM't.i -4 1 -8 5 Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • • Storage and Operating Temperature. -55°G to +1 0 0*0

HA13536F

Abstract: C102 M Hitachi DSA00177
Contextual Info: HA13536F Three-Phase Brushless DC Motor Driver IC ADE-207-111B Z 3rd Edition July 1996 Description The HA13536F is a 3-phase brushless DC motor driver IC with digital speed control. It is being developed for direct drive of the spindle motor of 5 V floppy disk drives with a height of 3/4" or less. It has the following functions and features.

5121M

Abstract: SMD 5121m 5121 M siemens C472 S200M C102 M S121-M b57620 S234 S229-M
Contextual Info: Bauformen für Oberflächenmontage SMD Chips for surface mounting (SMDs) Maßbild Typ Outline drawing Type C620 1,25±o,i5 r Nenn­ Toleranz widerstand Rated Tolerance resistance ^25 O A R 25 220 ±5% , ±10% , 330 470 680 1k 10 k 100 k 1 ,2 5 m a x S-Wert

c107

Abstract: R104 C101 CR202 c103 apex pa26 R101 R102 r-102 c201
Contextual Info: EVALUATION KIT FOR PA26 PIN-OUT EK26 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 INTRODUCTION Fast, easy breadboarding of circuits using the PA26 are possible with the EK26 PC board. Mounting holes are provided and the

transistor c102

Abstract: c3225 transistor POWER SUPPLYS C101 transistor C102 transistor C103 cap 1210 X5R X7R transistor c104 C103 c104
Contextual Info: REV Ｌ SMOOTHING Features Features UTILIZING MOST ADVANCED CERAMIC MATERIAL PROCESSING AND MULTILAYER CERAMIC TECHNOLOGY, THE CAPACITANCE RANGE HAS BEEN EXTENDED TO ELECTROLYTIC CAPACITORS. - NO POLARITY - LOW ESR AND GOOD FREQUEACY RESPONCE PROMISES GOOD PEFORMANCE

CQ1265RT

Abstract: CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265
Contextual Info: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a

capacitor marking c106

Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

SMD r801

Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,

CQ0765RT circuit diagram

Abstract: CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201
Contextual Info: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a

CQ0765RT

Abstract: CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU
Contextual Info: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a

transistor c102

Abstract: HA13565F hitec servo Hitachi DSA00177
Contextual Info: HA13565F Three-Phase Brushless DC Motor Driver IC ADE-207-226A Z 2nd. Edition April 1997 Description HA13565F is a 3-phase brushless DC motor driver IC with digital speed control. It is developed for direct drive of the spindle motor of 5V floppy disk drives. It has the following functions and features.

c102 TRANSISTOR

Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

mip2f2

Abstract: power supply LED 3w mip2f2 MIP2F2 IC mip2f mip2fx IC301 MIP2C2 MIP2C2 MIP2F2 power supply mip2f2 MIP022X
Contextual Info: IPD Product Selection Guide October 1, 2008 Semiconductor Company, Panasonic Corporation Precautions on the Sales of IPDs 1 The sale and/or the export of IPD products to any customer or customers located in any country other than Japan is expressly prohibited by the Agreement made and executed by and between Power Integrations, Inc. and Panasonic Corporation.

c102 TRANSISTOR

Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS