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    C-SERIES IGBT INSTRUCTIONS Search Results

    C-SERIES IGBT INSTRUCTIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER
    Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical PDF
    GT50J123
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 59 A, TO-3P(N) Datasheet
    GT30J122A
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT20J121
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, TO-220SIS Datasheet
    GT30J121
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet

    C-SERIES IGBT INSTRUCTIONS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: APTGF300U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK Features  Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current


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    APTGF300U120DG PDF

    Contextual Info: APTGF200U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 200A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK Features  Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current


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    APTGF200U120DG PDF

    Contextual Info: APTGF300U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK E Features • Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current


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    APTGF300U120DG PDF

    Contextual Info: APTGF200U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 200A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK E Features • Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current


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    APTGF200U120DG PDF

    igbt 400V 40A

    Contextual Info: FGB40N60SM tm 600V, 40A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop 2nd generation IGBTs offer the optimum performance for welding and PFC applications where low conduction


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    FGB40N60SM FGB40N60SM O-263AB/D2-PAK igbt 400V 40A PDF

    Contextual Info: FGAF20N60SMD 600 V, 20 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low


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    FGAF20N60SMD PDF

    Contextual Info: FGAF40N60SMD 600 V, 40 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low


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    FGAF40N60SMD PDF

    Contextual Info: FGA30N65SMD 650 V, 30 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low


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    FGA30N65SMD PDF

    400v 20A ultra fast recovery diode

    Contextual Info: FGAF20N60SMD 600V, 20A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, Welder and SMPS applications where low conduction and switching losses are essential.


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    FGAF20N60SMD FGAF20N60SMD 400v 20A ultra fast recovery diode PDF

    FGAF40N60SMD

    Abstract: smps welder inverter fgaf40n
    Contextual Info: FGAF40N60SMD 600V, 40A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, Welder and SMPS applications where low conduction and switching losses are essential.


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    FGAF40N60SMD FGAF40N60SMD smps welder inverter fgaf40n PDF

    Contextual Info: FGH60N60SMD 600 V, 60 A Field Stop IGBT Features General Description o • Maximum Junction Temperature: TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.


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    FGH60N60SMD PDF

    din 7985

    Abstract: din 6900 push switch 6mm c-series IGBT instructions din 46244 A 100N DIN46244 IGBT AS switch SCREW din 7985 AN2002
    Contextual Info: APPLICATION NOTE Date:2002-07-09 Page 1 of 6 AN-Number: AN2002-08 Mounting instructions 62mm C-series IGBT - modules half-bridges and single switches 1. Heat sink The mounting surface must be clan and free of particles. Flatness ≤ 25µm on a length of 100 mm


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    AN2002-08 53N53N EN61210 din 7985 din 6900 push switch 6mm c-series IGBT instructions din 46244 A 100N DIN46244 IGBT AS switch SCREW din 7985 AN2002 PDF

    4500a

    Abstract: APT0502 APT0601 APTGF300U120DG
    Contextual Info: APTGF300U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK Benefits • Outstanding performance at high frequency operation • Stable temperature behavior


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    APTGF300U120DG 4500a APT0502 APT0601 APTGF300U120DG PDF

    Contextual Info: TRENCHSTOP Series IKA15N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C 


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    IKA15N60T PDF

    Contextual Info: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK E C G CK Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current


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    APTGL475U120DAG PDF

    Contextual Info: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 EK E C G CK VCES = 1200V IC = 475A @ Tc = 100°C Application • Zero Current Switching resonant mode Features  Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current


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    APTGL475U120DAG PDF

    APT0502

    Abstract: APT0601
    Contextual Info: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK E C G CK Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current


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    APTGL475U120DAG APT0502 APT0601 PDF

    K15T60

    Abstract: IKA15N60T 15A 400 - 600V FAST DIODES
    Contextual Info: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


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    IKA15N60T PG-TO-220-3-31 K15T60 IKA15N60T 15A 400 - 600V FAST DIODES PDF

    Contextual Info: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


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    IKA15N60T PDF

    Contextual Info: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Low Loss DuoPack : •         C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


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    IKA15N60T PDF

    k15t60

    Abstract: IKA15N60T marking k15t60
    Contextual Info: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


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    IKA15N60T P-TO-220-3-31 O-220 k15t60 IKA15N60T marking k15t60 PDF

    Contextual Info: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C


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    IKA10N60T PDF

    k15t60

    Abstract: FAST RECOVERY DIODE diode 400V 4A FAST RECOVERY DIODE 200ns 8A 40V marking k15t60 5014-3 DEVICE MARKING CODE 150A fast recovery diode 1a trr 200ns MARKING CODE 150A IKA15N60T
    Contextual Info: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


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    IKA15N60T P-TO-220-3-31 O-220 k15t60 FAST RECOVERY DIODE diode 400V 4A FAST RECOVERY DIODE 200ns 8A 40V marking k15t60 5014-3 DEVICE MARKING CODE 150A fast recovery diode 1a trr 200ns MARKING CODE 150A IKA15N60T PDF

    k10t60

    Abstract: 5304 marking code IKA10N60T
    Contextual Info: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time – 5µs


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    IKA10N60T Oct-04 k10t60 5304 marking code IKA10N60T PDF