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    C-BAND INTERNALLY MATCHED FET Search Results

    C-BAND INTERNALLY MATCHED FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLC32044EFN
    		Rochester Electronics LLC TLC32044 - Voice-Band Analog Interface Circuits PDF Buy
    TLC32044IN
    		Rochester Electronics LLC TLC32044 - Voice-Band Analog Interface Circuits PDF Buy
    TLC32044IFK
    		Rochester Electronics LLC TLC32044 - Voice-Band Analog Interface Circuits PDF Buy
    TLC32044MFK/B
    		Rochester Electronics LLC TLC32044 - Voice-Band Analog Interface Circuits PDF Buy
    BLL1214-35
    		Rochester Electronics LLC L-band radar LDMOS driver transistor PDF Buy

    C-BAND INTERNALLY MATCHED FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ELM7785-7PS

    Abstract: ELM7785-7PST ELM7785 FET MARKING Device Innovations
    Contextual Info: ELM7785-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=9.5dB (Typ.) High PAE: ηadd=33% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-7PS is a power GaAs FET that is internally matched for


    Original     		ELM7785-7PS ELM7785-7PS ELM7785-7PST ELM7785 FET MARKING Device Innovations PDF

    Eudyna TAPE

    Abstract: washing powder
    Contextual Info: ELM6472-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: add=36% (Typ.) Frequency Band: 6.4~7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM6472-4PS is a power GaAs FET that is internally matched for


    Original     		ELM6472-4PS ELM6472-4PS Eudyna TAPE washing powder PDF

    C-Band Power marking E

    Contextual Info: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: add=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for


    Original     		ELM5964-4PS ELM5964-4PS C-Band Power marking E PDF

    SUMITOMO 1085

    Abstract: ELM7785-4PS SUMITOMO 1710
    Contextual Info: ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched for


    Original     		ELM7785-4PS ELM7785-4PS SUMITOMO 1085 SUMITOMO 1710 PDF

    FET MARKING

    Abstract: ELM5964-4PS ELM5964 Sumitomo elm5964 elm5964-4pst elm5964-4
    Contextual Info: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for


    Original     		ELM5964-4PS ELM5964-4PS FET MARKING ELM5964 Sumitomo elm5964 elm5964-4pst elm5964-4 PDF

    elm7179

    Abstract: ELM7179-4PS sumit
    Contextual Info: ELM7179-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.5dB (Typ.) High PAE: ηadd=35% (Typ.) Broad Band: 7.1~7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-4PS is a power GaAs FET that is internally matched for


    Original     		ELM7179-4PS ELM7179-4PS elm7179 sumit PDF

    Contextual Info: ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: add=34% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched for


    Original     		ELM7785-4PS ELM7785-4PS PDF

    ELM7179-4PS

    Abstract: FET MARKING
    Contextual Info: ELM7179-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.5dB (Typ.) High PAE: add=35% (Typ.) Broad Band: 7.1~7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-4PS is a power GaAs FET that is internally matched for


    Original     		ELM7179-4PS ELM7179-4PS FET MARKING PDF

    sumitomo 6600

    Abstract: ELM6472-4PS
    Contextual Info: ELM6472-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: ηadd=36% (Typ.) Frequency Band: 6.4~7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM6472-4PS is a power GaAs FET that is internally matched for


    Original     		ELM6472-4PS ELM6472-4PS sumitomo 6600 PDF

    ELM7179-7PS

    Abstract: fet a 1412 FET MARKING SUMITOMO 1033
    Contextual Info: ELM7179-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broad Band: 7.1~7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-7PS is a power GaAs FET that is internally matched for


    Original     		ELM7179-7PS ELM7179-7PS fet a 1412 FET MARKING SUMITOMO 1033 PDF

    MGFC47B3436

    Abstract: MGFC47B
    Contextual Info: < C band internally matched power GaAs FET > MGFC47B3436 3.4 – 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC47B3436 MGFC47B3436B 37dBm 10ohm MGFC47B3436 MGFC47B PDF

    Contextual Info: ELM7179-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.5dB (Typ.) High PAE: hadd=35% (Typ.) Broad Band: 7.1 to 7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-4PS is a power GaAs FET that is internally matched for


    Original     		ELM7179-4PS ELM7179-4PS PDF

    Contextual Info: <C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package


    Original     		MGFC42V7177 MGFC42V7177 PDF

    MGFC47B3538B

    Abstract: MGFC47B
    Contextual Info: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package


    Original     		MGFC47B3538B MGFC47B3538B 37dBm GF-60 MGFC47B PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC45B3436B 3.4 – 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC45B3436B MGFC45B3436B -45dBc 12ohm PDF

    Contextual Info: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package


    Original     		MGFC47B3538B MGFC47B3538B 37dBm GF-60 PDF

    Contextual Info: ELM5964-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: ηadd=36% (Typ.) Broad Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-7PS is a power GaAs FET that is internally matched for


    Original     		ELM5964-7PS ELM5964-7PS PDF

    Contextual Info: ELM6472-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: hadd=36% (Typ.) Frequency Band: 6.4 to 7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM6472-4PS is a power GaAs FET that is internally matched for


    Original     		ELM6472-4PS ELM6472-4PS PDF

    Contextual Info: ELM6472-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=10.5dB (Typ.) High PAE: ηadd=35% (Typ.) Broad Band: 6.4 to 7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM6472-7PS is a power GaAs FET that is internally matched for


    Original     		ELM6472-7PS ELM6472-7PS PDF

    ELM5964-7PS

    Abstract: JESD22-A114 C-Band Power marking E ELM7179-7PS
    Contextual Info: ELM5964-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: ηadd=36% (Typ.) Broad Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-7PS is a power GaAs FET that is internally matched for


    Original     		ELM5964-7PS ELM5964-7PS JESD22-A114 C-Band Power marking E ELM7179-7PS PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC45B3436B 3.4 – 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC45B3436B MGFC45B3436B -45dBc 12ohm PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC47B3436 3.4 – 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC47B3436 MGFC47B3436B 37dBm 10ohm PDF

    Contextual Info: ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: hadd=34% (Typ.) Broad Band: 7.7 to 8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched for


    Original     		ELM7785-4PS ELM7785-4PS PDF

    Contextual Info: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: hadd=37% (Typ.) Frequency Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for


    Original     		ELM5964-4PS ELM5964-4PS PDF