BC857S(RANGE:200-450)
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JCET Group
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BC857S is a dual PNP transistor in SOT-363 package with 45 V collector-emitter breakdown voltage, 200 MHz transition frequency, and DC current gain up to 630, designed for compact circuit applications. |
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BC857B
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Shikues Semiconductor
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BC857T
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JCET Group
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PNP transistor in SOT-523 package, with collector-base voltage of -50V, collector current up to -0.1A, DC current gain (hFE) from 125 to 800, and transition frequency (fT) of 100MHz, suited for switching and audio frequency amplifier applications. |
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BC857B
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SLKOR
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BC857W
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-323 surface mount package, with -45 V collector-emitter voltage, -100 mA collector current, 150 mW power dissipation, and DC current gain ranging from 125 to 800 depending on rank. |
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BC857C
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-23 package, with -50 V collector-base voltage, -45 V collector-emitter voltage, -100 mA collector current, 200 mW power dissipation, and DC current gain ranging from 110 to 800. |
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BC857W
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JCET Group
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PNP transistor in SOT-323 package, featuring -80V to -30V collector-base voltage, -100mA collector current, 150mW power dissipation, and DC current gain up to 800, suited for switching and audio frequency amplifier applications. |
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AD-BC857
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JCET Group
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PnP transistor in SOT-23 package, part of AD-BC856/57/58 series, with collector-base voltage up to -80V, Ic of -0.1A, and hFE ranging from 125 to 800 depending on variant. |
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BC857B(RANGE:220-475)
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JCET Group
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PNP transistors in SOT-23 package, including BC856A/B, BC857A/B/C, and BC858A/B/C, designed for switching and audio frequency amplifier applications, with collector current up to 0.1 A and power dissipation of 200 mW. |
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BC857(RANGE:420-800)
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JCET Group
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PNP transistors in SOT-23 package, suitable for switching and audio frequency amplifier applications, with collector current up to -0.1 A, featuring various voltage ratings and DC current gain options for BC856, BC857, and BC858 series. |
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BC857A(RANGE:125-250)
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JCET Group
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PNP transistors in SOT-23 package, including BC856A/B, BC857A/B/C, and BC858A/B/C, designed for switching and audio frequency amplifier applications, with collector current up to 0.1 A and power dissipation of 200 mW. |
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BC857 3E
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JCET Group
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PNP transistor in SOT-23 package, suitable for switching and audio frequency amplifier applications, with collector current up to -0.1 A, collector-emitter voltage up to -65 V, and DC current gain from 125 to 800 depending on variant. |
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BC857A
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-23 package, with -45 V collector-emitter voltage, -100 mA collector current, 200 mW power dissipation, and DC current gain ranging from 110 to 800, suitable for switching and audio frequency amplifier applications. |
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BC857BV
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JCET Group
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Dual PNP transistor in SOT-563 package with -45V collector-emitter voltage, -0.1A continuous collector current, 220 to 475 DC current gain, and 100MHz transition frequency, designed for surface mount applications. |
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BC857
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Microdiode Semiconductor
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SOT-23, PNP transistor, max. current 100mA, max. voltage 65V. |
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BC857B
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-23 package, with -45 V collector-emitter voltage, -100 mA collector current, 200 mW power dissipation, and DC current gain ranging from 110 to 800, suitable for switching and audio frequency amplifier applications. |
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BC856DW 、BC857DW
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CREATEK Microelectronics
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Dual PNP small signal transistor in SOT-363 package, with -80V collector-base voltage, -50V collector-emitter voltage, -0.1A continuous collector current, and 200mW power dissipation, suitable for surface mount applications. |
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BC857S(RANGE:200-450)
