BC847B
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 package, with 50 V collector-base voltage, 100 mA collector current, 200 mW power dissipation, and DC current gain ranging from 110 to 800 depending on variant. |
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BC847 1E(RANGE:110-220)
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JCET Group
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NPN transistor in SOT-23 package, part of the BC846/BC847/BC848 series, with collector current up to 100 mA, collector-emitter voltage from 30 to 65 V, and DC current gain up to 800, suitable for switching and audio frequency amplifier applications. |
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AD-BC847W-B
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JCET Group
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NPN transistor in SOT-323 package, suitable for switching and audio frequency amplifier applications, with collector-emitter voltage up to 65V, continuous collector current of 100mA, and DC current gain varying by suffix A, B, or C. |
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BC847BVN
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JCET Group
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BC847BVN is a dual transistor in SOT-563 package combining NPN and PNP epitaxial die with 45 V collector-emitter voltage, 100 MHz transition frequency, 150 mW power dissipation, and DC current gain up to 475. |
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BC847S(RANGE:110-630)
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JCET Group
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Dual NPN transistor in SOT-363 package with 50 V collector-base voltage, 45 V collector-emitter voltage, 100 mA continuous collector current, and 200 mW power dissipation. |
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BC847BV
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JCET Group
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Dual NPN transistor in SOT-563 package with 45 V collector-emitter voltage, 100 mA continuous collector current, 200-450 DC current gain, and 100 MHz transition frequency. |
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BC847W
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-323 surface mount package, with 45 V collector-emitter voltage, 100 mA collector current, 150 mW power dissipation, and DC current gain ranging from 150 to 800 depending on rank. |
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BC847(RANGE:200-450)
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JCET Group
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NPN transistor in SOT-23 package, suited for switching and audio frequency amplifier applications, with collector current up to 100 mA, collector-emitter voltage from 30 to 65 V, and DC current gain up to 800. |
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BC847
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Shikues Semiconductor
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BC847B
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SLKOR
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NPN Silicon Epitaxial Planar Transistor. |
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BC847C
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Shikues Semiconductor
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AD-BC847-B
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JCET Group
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NPN transistor in SOT-23 package, part of AD-BC846/47/48 series, with collector-base voltage up to 80V, collector current 100mA, DC current gain from 110 to 800, and transition frequency 100MHz. |
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BC847C
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 package, with 50 V collector-base voltage, 100 mA collector current, 200 mW power dissipation, and DC current gain ranging from 110 to 800 depending on hFE rank. |
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BC847A
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 package, with 45 V collector-emitter voltage, 100 mA collector current, 200 mW power dissipation, and DC current gain ranging from 110 to 800 depending on rank. |
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BC847BT
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SLKOR
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Switching/amplifier, 30-80V, 30-65V, 5-6V, 100mA, 200mA, 150mW, 150°C, -65 to +150°C, 110-800, 300MHz, 6pF. |
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BC847T
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JCET Group
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NPN transistor in SOT-523 package, designed for switching and AF amplifier applications, with collector current up to 100 mA, collector-emitter voltage up to 45 V, and DC current gain ranging from 110 to 800 depending on variant. |
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BC847B
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Shikues Semiconductor
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BC847 1F(RANGE:200-450)
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JCET Group
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NPN transistor in SOT-23 package, part of the BC846/BC847/BC848 series, with collector current up to 100 mA, collector-emitter voltage from 30 to 65 V, and DC current gain up to 800, suitable for switching and audio frequency amplifier applications. |
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BC847W
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JCET Group
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NPN transistor in SOT-323 package, suited for switching and audio frequency amplifier applications, with collector current up to 100 mA, collector-emitter voltage from 30 V to 65 V depending on variant, and DC current gain up to 800. |
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BC847 1G(RANGE:420-800)
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JCET Group
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NPN transistor in SOT-23 package, part of the BC846/BC847/BC848 series, with collector current up to 100 mA, collector-emitter voltage from 30 to 65 V, and DC current gain up to 800, suitable for switching and audio frequency amplifier applications. |
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BC847B
