Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    c-458cd64s-a10b Datasheets

    Top Results (6)

    Part ECAD Model Manufacturer Description Download Buy
    71T016SA10BF Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation
    71V016SA10BF Renesas Electronics Corporation 3.3V 64K x 16 Bit Asynchronous Static RAM Visit Renesas Electronics Corporation
    71T016SA10BF8 Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation
    71V016SA10BFG Renesas Electronics Corporation 3.3V 64K x 16 Bit Asynchronous Static RAM Visit Renesas Electronics Corporation
    71V016SA10BFG8 Renesas Electronics Corporation 3.3V 64K x 16 Bit Asynchronous Static RAM Visit Renesas Electronics Corporation
    71V016SA10BFGI Renesas Electronics Corporation 3.3V 64K x 16 Bit Asynchronous Static RAM Visit Renesas Electronics Corporation

    c-458cd64s-a10b Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1999 - MC-458CD64LS

    Abstract: No abstract text available
    Text: frequency and Access time from CLK Part number /CAS latency Clock frequency (MAX.) MC- 458CD64S -A80 CL = 3 CL = 2 MC- 458CD64S -A10 CL = 3 CL = 2 MC- 458CD64S-A10B CL = 3 CL = 2 MC- 458CD64S -A10BL CL = 3 CL = 2 , -A80 MC- 458CD64S -A10 MC- 458CD64S-A10B MC- 458CD64S -A10BL MC-458CD64LS- A10B MC-458CD64LS-A10BL 125 MHz 100 , DATA SHEET MOS INTEGRATED CIRCUIT MC- 458CD64S , 458CD64LS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 458CD64S and MC-458CD64LS are a 8,388,608 words by 64


    Original     		PDF MC-458CD64S, 458CD64LS 64-BIT MC-458CD64S MC-458CD64LS PD4564163 MC-458CD64S-A80 MC-458CD64S-A10

    Not Available

    Abstract: No abstract text available
    Text: CL = 2 77 MHz 7 ns 2,232 mW CL = 3 100 MHz 7 ns 2,736 mW CL = 2 MC- 458CD64S-A10B (MAX.) CL = 3 MC- 458CD64S -A10 Clock access time (MAX.) MC- 458CD64S -A80 Clock frequency , ) (400 mil TSOP (II) MC- 458CD64S-A10B 100 MHz Edge connector: Gold plated MC- 458CD64S , DATA SHEET MOS INTEGRATED CIRCUIT MC- 458CD64S 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 458CD64S is a 8,388,608 words by 64 bits synchronous dynamic RAM


    OCR Scan     		PDF MC-458CD64S 64-BIT MC-458CD64S uPD4564163

    Not Available

    Abstract: No abstract text available
    Text: 2 M C-458CD64S-A10B (MAX.) CL = 3 M C-458CD 64S-A10 C lock access tim e (MAX.) M C- 458CD64S -A80 Clock frequency Power consum ption (MAX.) 67 MHz 8 ns 1,944 m W â , DATA SHEET MOS INTEGRATED CIRCUIT MC- 458CD64S 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 458CD64S is a 8,388,608 words by 64 bits synchronous dynamic RAM , revised points. © N EC Corporation 1997 NEC MC- 458CD64S Ordering Information Part num ber


    OCR Scan     		PDF MC-458CD64S 64-BIT MC-458CD64S uPD4564163 -A10B/-A10BL

    MC-458CD64S-A10

    Abstract: MC-458CD64S-A10B MC-458CD64S-A10BL MC-458CD64S-A80 11DQ60
    Text: CL = 2 77 MHz 7 ns 2,232 mW CL = 3 100 MHz 7 ns 2,736 mW CL = 2 MC- 458CD64S-A10B , (Socket Type) (400 mil TSOP (II) MC- 458CD64S-A10B 100 MHz Edge connector : Gold plated MC- 458CD64S , 7 MC- 458CD64S Synchronous Characteristics Parameter Symbol -A80 -A10 - A10B Unit , DATA SHEET MOS INTEGRATED CIRCUIT MC- 458CD64S 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 458CD64S is a 8,388,608 words by 64 bits synchronous dynamic RAM


    Original     		PDF MC-458CD64S 64-BIT MC-458CD64S PD4564163 MC-458CD64S-A10 MC-458CD64S-A10B MC-458CD64S-A10BL MC-458CD64S-A80 11DQ60

    C-458CD64S-A10B

    Abstract: No abstract text available
    Text: Clock frequency and Access time from CLK Part num ber /C AS latency Clock frequency (MAX.) M C- 458CD64S -A80 CL = 3 CL = 2 M C-458CD 64S-A10 CL = 3 CL = 2 M C-458CD64S-A10B CL = 3 CL = 2 M C-458CD 64S-A10BL CL , -458CD 64S-A10 M C - 458CD64S-A10B M C-458C D64S-A10BL MC-458CD64LS-A1 OB MC-458CD64LS-A1OBL 125 MHz 100 MHz , DATA SHEET / MOS INTEGRATED CIRCUIT MC- 458CD64S , 458CD64LS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 458CD64S and MC-458CD64LS are a 8,388,608 words by 64


    OCR Scan     		PDF MC-458CD64S, 458CD64LS 64-BIT MC-458CD64S MC-458CD64LS PD4564163 C-458CD64S-A80 C-458CD 13041EJ6V0D C-458CD64S-A10B

    1998 - upd23c8000

    Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
    Text: ) 3.3±0.3 54-pin TSOP (II) (400 mil) Package µPD45128441 µPD45128441-L A80 A10 A10B A80 A10 A10B A80 A10 A10B 4M × 8 × 4 µPD45128841 µPD45128841-L 2M × 16 × 4 µPD45128163 µPD45128163-L BL , voltage (V) 3.3±0.3 54-pin TSOP (II) (400 mil) Package µPD4564441 µPD4564441-L A80 A10 A10B A80 A10 A10B A80 A10 A10B 2M × 8 × 4 µPD4564841 µPD4564841-L 1M × 16 × 4 µPD4564163 µPD4564163-L , mil) Package µPD4564323 µPD4564323-L A80 A10 A10B BL: Burst length MENU · 16M


    Original     		PDF -PC100 compliant64M compliant16M 168-pin 16-bit, upd23c8000 upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000

    1998 - Not Available

    Abstract: No abstract text available
    Text: Family /CAS latency Clock frequency (MAX.) MC-4516CD645- A10B CL = 3 CL = 2 100 MHz 67 MHz Clock access , devices 16 pieces of µPD4564841G5 (Rev. E) (400 mil TSOP (II) [Double side] MC-4516CD645FA- A10B 168 , - A10B /CAS latency = 3 - A10B /CAS latency = 2 - A10B /CAS latency = 3 - A10B Self refresh current Input , 16 +16 +500 +3.0 mA mA 3 mA 2 160 80 64 400 mA mA 96 Test condition Grade /CAS latency = 2 - A10B /CAS latency = 3 - A10B MIN. MAX. 720 800 16 8 320 mA mA Unit Notes mA 1 µA µA µA V V Notes 1. ICC1


    Original     		PDF MC-4516CD645 16M-WORD 64-BIT MC-4516CD645 PD4564841 MC-4516CD645-A10B

    Not Available

    Abstract: No abstract text available
    Text: MC-454CB64S- A10B (MAX.) CL = 3 MC-454CB64S-A10 Clock access time (MAX.) MC , ) (Socket Type) MC-454CB64S-A10 100 MHz Edge connector: Gold plated 25.4 mm (1 inch) height MC-454CB64S- A10B , voltage = 2 660 - A10B /CAS latency = 780 -A10 /CAS latency -A80 - A10B tRC>tRC(MIN.) 3 440 -A10 |CC5 = 520 - A10B /CAS latency 660 -A10 = -A80 - A10B lo = 0m A 40 -A10 |CC4 tcK>tcK(MiN.), , Input signals are stable


    OCR Scan     		PDF MC-454CB64S 64-BIT MC-454CB64S uPD4564163

    Not Available

    Abstract: No abstract text available
    Text: 100 MHz 7 ns CL = 2 67 MHz 8 ns MC-458CB64LSA- A10B MC-458CB64ESB-A1 OB • Fully , -458CB64SA-A10 125 MHz (400 mil TSOP (II) Edge connector: Gold plated 26.67 mm (1.05 inch) height MC-458CB64SA- A10B , ) 100 MHz 144-pin Small Outline DIMM 4 pieces of /¿PD45128163G5 (Rev. E) (Socket Type) MC-458CB64ESB- A10B , latency = 3 -A80 840 -A10 640 - A10B 560 /CAS latency = 3 -A80 1,040 3 1,040 840 -A80 1,080 -A10 1,080 - A10B |CC6 mA 840 - A10B tR C > tR C (M IN .


    OCR Scan     		PDF MC-458CB64SA, 458CB64LSA, MC-458CB64ESB 64-BIT MC-458CB64SA C-458CB64LSA uPD4564841 MC-458CB64ESB uPD45128163

    MC-454CB64S-A10

    Abstract: MC-454CB64S-A10B MC-454CB64S-A10BL MC-454CB64S-A80
    Text: CL = 3 100MHz 7ns 2,376 mW CL = 2 MC-454CB64S-A10BL (MAX.) CL = 2 MC-454CB64S- A10B , . E) (Socket Type) Edge connector : Gold plated 25.4 mm (1 inch) height MC-454CB64S- A10B MC , 0 mA /CAS latency = 2 mA 660 660 -A80 520 520 420 -A80 540 540 - A10B 460 -* 4 -*L CKE 0.2 V 780 -A10 ICC6 -A80 - A10B /CAS latency = 3 440 -A10 /CAS latency = 2 520 - A10B tRC tRC(MIN.) 660 -A10 ICC5 -A80 -A10 /CAS


    Original     		PDF MC-454CB64S 64-BIT MC-454CB64S PD4564163 MC-454CB64S-A10 MC-454CB64S-A10B MC-454CB64S-A10BL MC-454CB64S-A80

    1999 - Not Available

    Abstract: No abstract text available
    Text: CL = 2 MC-454CB64S-A10 CL = 3 CL = 2 MC-454CB64S- A10B CL = 3 CL = 2 MC-454CB64S-A10BL CL = 3 CL = 2 MC-454CB64LS- A10B CL = 3 CL = 2 MC-454CB64LS-A10BL CL = 3 CL = 2 125 MHz 100 MHz 100 MHz 77 MHz 100 , 25.4 mm (1 inch) height MC-454CB64S- A10B 100 MHz 4 pieces of µPD4564163G5 (Rev. E) (400 mil TSOP (II , (II) MC-454CB64LS- A10B 100 MHz MC-454CB64LS-A10BL 100 MHz 2 Data sheet , -A80 -A10 - A10B /CAS latency = 3 -A80 -A10 - A10B Precharge standby current in power down mode Precharge


    Original     		PDF MC-454CB64S, 454CB64LS 64-BIT MC-454CB64S MC-454CB64LS PD4564163 MC-454CB64S-A80 MC-454CB64S-A10

    Not Available

    Abstract: No abstract text available
    Text: 2 Part number 67 MHz 8 ns /CAS Latency Pr MC-458CB64ESB- A10B (MIN.) MC-458CB64PSB- A10B , -pin Small Outline DIMM 4 pieces of µPD45128163G5 (Rev. E) (Socket Type) MC-458CB64ESB- A10B (10.16mm (400) TSOP (II) Edge connector: Gold plated MC-458CB64PSB- A10B 100 MHz 25.4 mm height , Voltage interface 01H 0 0 0 0 0 0 0 1 LVTTL CL = 3 Cycle time - A10B A0H 1 0 1 0 0 0 0 0 10 ns CL =3 Access time - A10B 70H 0 1


    Original     		PDF MC-458CB64ESB, 458CB64PSB 64-BIT MC-458CB64ESB MC-458CB64PSB PD45128163

    c458c

    Abstract: C-458C MC-458CB64SA-A1OBL pd4564841
    Text: -458CB64SA-A80 CL = 3 CL = 2 M C -458C B64SA-A10 CL = 3 CL = 2 M C -458CB64SA- A10B CL = 3 CL = 2 M C -458C , = MIN. -A80 -A10 - A10B MAX. 640 560 520 680 600 600 8 4 Unit mA Notes 1 1, tR c > tR c A10B Precharge standby , 80 2 -A80 -A10 - A10B 840 640 560 1,000 840 840 1,040 1,040 840 1,080 1,080 920 8 3.2 -8 -1 .5 2.4 0.4 , /C AS latency = 3 -A80 -A10 - A10B CBR (Auto) refresh current |CC5 tR C > tR C (M IN


    OCR Scan     		PDF MC-458CB64SA, 458CB64LSA 64-BIT MC-458CB64SA MC-458CB64LAS PD4564841 -458CB64SA-A80 M12263EJ8V0DS00 c458c C-458C MC-458CB64SA-A1OBL

    1998 - 4MX64

    Abstract: PC100 8Mx64 A10B MC-458DA726F-A80
    Text: SYNCHRONOUS DUAL INLINE MEMORY MODULES 32M TO 256M DENSITIES · 3.3V, 168PIN, UNBUFFERED, 1.3" HIGH WITH A GOLD FINISH 32M TO 256M SYNCHRONOUS DUAL INLINE MEMORY MODULES Part Number MC-454CB645FA- A10B MC-454CB646F-A10 MC-454CB646F-A80 MC-458CB645F- A10B MC-458CB646F-A10 MC-458CB646F-A80 MC-458CA725F- A10B MC-458CA726F-A10 MC-458CA726F-A80 MC-458DA726F-A10 MC-458DA726F-A80 MC-4516CD645F- A10B MC-4516CD646F-A10 MC-4516CD646F-A80 MC-4516CC725F- A10B MC-4516CC726F-A10 MC-4516CC726F-A80 MC-4516DA726F-A10 MC


    Original     		PDF 168PIN, MC-454CB645FA-A10B MC-454CB646F-A10 MC-454CB646F-A80 MC-458CB645F-A10B MC-458CB646F-A10 MC-458CB646F-A80 MC-458CA725F-A10B MC-458CA726F-A10 MC-458CA726F-A80 4MX64 PC100 8Mx64 A10B MC-458DA726F-A80

    Not Available

    Abstract: No abstract text available
    Text: latency = 2 -A80 -A10 - A10B /CAS latency = 3 -A80 -A10 - A10B MAX. 360 360 280 460 460 360 4 2 Unit , . /CAS latency = 2 -A80 -A10 - A10B /CAS latency = 3 -A80 -A10 - A10B 40 660 520 440 780 660 660 520 520 , -A80 -A10 - A10B /CAS latency = 3 -A80 -A10 - A10B Self refresh current Input leakage current , -A 10 - A10B 10 CL =3 Access time -A80 -A10 - A10B 11 12 13 14 15 16 17 18 19 20 21 22 23 DIMM , SDRAM module attributes SDRAM device attributes : General CL = 2 Cycle time -A80 -A10 - A10B 24 CL = 2


    OCR Scan     		PDF MC-454CB64S 64-BIT MC-454CB64S uPD4564163 MC-454CB64S-A80 MC-454CB64S-A10 MC-454CB6

    Not Available

    Abstract: No abstract text available
    Text: ), tcK = tcK = Unit Notes 720 mA 1 /CAS latency = 3 - A10B 0 mA MAX. /CAS latency = 2 - A10B 1 Grade MIN. 800 15 ns 16 mA 8 00 15 ns, /CS > V 320 , signals are stable. Operating current |C 4 C |C 5 C 760 /CAS latency = 3 - A10B 1,040 tR C > t R C (MIN.) /CAS latency = 2 - A10B 1,040 /CAS latency = 3 - A10B Refresh current /CAS latency = 2 - A10B lo = 0m A (Burst mode) t c K > t c K (M IN .) 1,120 Self refresh


    OCR Scan     		PDF MC-4516CD645 16M-WORD 64-BIT MC-4516CD645 uPD4564841

    1998 - Not Available

    Abstract: No abstract text available
    Text: Family /CAS latency Clock frequency (MAX.) MC-454CB645- A10B CL = 3 CL = 2 100 MHz 67 MHz Clock access , number Clock frequency (MAX.) MC-454CB645FA- A10B 100 MHz 168-pin Dual In-line Memory Module (Socket Type , latency = 2 - A10B /CAS latency = 3 - A10B /CAS latency = 2 - A10B /CAS latency = 3 - A10B Self refresh , 40 20 16 100 mA mA 24 Test condition Grade /CAS latency = 2 - A10B /CAS latency = 3 - A10B MIN. MAX , tDS tDH tAS tAH tCKS tCKH tCKSP tCMS 3.5 3.5 3 0 3 3 2.5 1 2.5 1 2.5 1 2.5 2.5 7 8 10 15 - A10B MAX


    Original     		PDF MC-454CB645 72-BIT MC-454CB645 PD4564163 MC-454CB645-A10B

    1999 - Not Available

    Abstract: No abstract text available
    Text: -458CB64SA-A80 CL = 3 CL = 2 MC-458CB64SA-A10 CL = 3 CL = 2 MC-458CB64SA- A10B CL = 3 CL = 2 MC-458CB64SA-A10BL CL = , ,312 mW 3,024 mW 3,312 mW 3,024 mW 3,312 mW 3,024 mW 14.4 mW · · MC-458CB64LSA- A10B CL = 3 CL , Ordering Information Part number Clock frequency MHz (MAX.) MC-458CB64SA-A80 MC-458CB64SA-A10 MC-458CB64SA- A10B MC-458CB64SA-A10BL MC-458CB64LSA- A10B MC-458CB64LSA-A10BL 125 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 , condition Burst length = 1, tRC tRC(MIN.) IO = 0 mA /CAS latency = 2 -A80 -A10 - A10B /CAS latency = 3 -A80


    Original     		PDF MC-458CB64SA, 458CB64LSA 64-BIT MC-458CB64SA MC-458CB64LAS PD4564841 MC-458CB64SA-A80 MC-458CB64SA-A1es,

    Not Available

    Abstract: No abstract text available
    Text: *L CKE < 0.2 V 760 - A10B |CC6 880 -A10 /CAS latency = 3 -A80 - A10B /CAS latency = 2 580 -A10 tR C > tR C (M IN .) 620 - A10B |CC5 760 -A10 /CAS latency = 3 -A80 - A10B Self refresh current mA 120 -A10 |CC4 (Burst mode) Refresh , - A10B tR c > tR c < M iN .) Notes -A10 Burst length = 1, Unit - A10B Ic c i MAX , - A10B Unit MIN. Clock cycle time MAX. MIN. MAX. MIN. Note MAX. tc K 3 8


    OCR Scan     		PDF MC-4516CD64S 64-BIT MC-4516CD64S uPD45128163

    Not Available

    Abstract: No abstract text available
    Text: CL = 2 M C -454CB64S- A10B (MAX.) CL = 2 M C-454CB64S-A10 Clock access tim e (MAX.) M C , plated 25.4 mm (1 inch) height M C -454CB64S- A10B M C -454CB64S-A10BL ★ 2 100MHz 100 , - A10B /C A S latency = 2 Notes -A10 Burst length = 1, tRc>tRC(MiN.) Unit - A10B Icci , 520 .* * 0.2 V -A80 -*L CKE 660 - A10B |CC6 660 -A10 Self refresh current 780 - A10B /C A S latency = 3 -A80 -A10 /C A S latency = 2 440 - A10B tRC


    OCR Scan     		PDF MC-454CB64S 64-BIT MC-454CB64S PD4564163

    1998 - a10b

    Abstract: ns4248 MC-4516CD64S-A10 MC-4516CD64S-A10B MC-4516CD64S-A10BL MC-4516CD64S-A80 PD45128163
    Text: CL = 2 77 MHz 7 ns 3,816 mW CL = 3 100 MHz 7 ns 3,672 mW CL = 2 MC-4516CD64S- A10B , (Socket Type) (400 mil TSOP (II) MC-4516CD64S- A10B 100 MHz Edge connector : Gold plated MC , ,100 - A10B 1,020 -* 16 -*L CKE 0.2 V 760 -A10 ICC6 880 - A10B /CAS latency = 3 -A80 -A10 /CAS latency = 2 580 - A10B tRC tRC(MIN.) 620 -A10 ICC5 760 -A10 /CAS latency = 3 -A80 - A10B Self refresh current mA 48 (Burst mode


    Original     		PDF MC-4516CD64S 64-BIT MC-4516CD64S PD45128163 a10b ns4248 MC-4516CD64S-A10 MC-4516CD64S-A10B MC-4516CD64S-A10BL MC-4516CD64S-A80

    Not Available

    Abstract: No abstract text available
    Text: 7 ns 2,376 mW CL = 2 MC-454CB64S- A10B (MAX.) CL = 3 MC-454CB64S-A10 Clock , ) (Socket Type) MC-454CB64S-A10 100 MHz Edge connector: Gold plated 25.4 mm (1 inch) height MC-454CB64S- A10B , 540 460 lo = - 2 . 0 m A Low level output voltage 3 660 - A10B = 2 780 -A10 /CAS latency = -A80 - A10B /CAS latency tRC>tRC(MIN.) 3 440 -A10 |CC5 = 520 - A10B /CAS latency 660 -A10 = -A80 - A10B lo = 0m A 40 -A10


    OCR Scan     		PDF MC-454CB64S 64-BIT

    2000 - MC-458CB64ESB

    Abstract: MC-458CB64ESB-A10B MC-458CB64PSB MC-458CB64PSB-A10B PD45128163
    Text: · Clock frequency and access time from CLK 5 MC-458CB64PSB- A10B Access time from CLK CL = 3 100 MHz 7 ns 67 MHz 8 ns CL = 3 100 MHz 7 ns CL = 2 MC-458CB64ESB- A10B , ) (Socket Type) MC-458CB64ESB- A10B (10.16mm (400) TSOP (II) Edge connector: Gold plated 5 MC-458CB64PSB- A10B , -458CB64ESB, 458CB64PSB Synchronous Characteristics Parameter Symbol - A10B MIN. Clock cycle time Unit , M12263EJAV0DS00 1 MC-458CB64ESB, 458CB64PSB Asynchronous Characteristics Parameter Symbol - A10B


    Original     		PDF MC-458CB64ESB, 458CB64PSB 64-BIT MC-458CB64ESB MC-458CB64PSB PD45128163 MC-458CB64PSB-A10B MC-458CB64ESB-A10B MC-458CB64PSB-A10B

    2000 - A80L

    Abstract: PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
    Text: ) (cycles /ms) 3.3±0.3 8K/64 LVTTL G5: 54pin TSOP(ll) A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 A10L 3 2 A10BL 3 2 , ) (V) (cycles /ms) 3.3±0.3 8K/64 LVTTL G5: 54pin TSOP(ll) A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 A10L 3 2 , PC100 (222) PC100 7 (322) - 8 × × 256M5 4M×16×4 µPD45256163 A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 , ) 3.3±0.3 4K/64 LVTTL G5: 54pin TSOP(ll) A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 A10L 3 2 A10BL 3 2 125 100 100 77 , ) 3.3±0.3 4K/64 LVTTL G5: 54pin TSOP(ll) A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 A10L 3 2 A10BL 3 2 125 100 100 77


    Original     		PDF X13769XJ2V0CD00 DRAMSDR256M× 8K/64 54pin A10BL PC100 400mil) PC133 A80L PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333

    1998 - Not Available

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT MC- 458CD64S 1 M-WORD BY 64M-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Please consult with our sales offices for data sheet. NEC


    Original     		PDF MC-458CD64S 64M-BIT
    ...

    Privacy Policy | Digital Services Act | Contact Us | About Us

    Copyright © 2023.

    Supplyframe Tracking Pixel