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    c-4532da727-a75 Datasheets

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    Not Available

    Abstract: No abstract text available
    Text: Access time from CLK. Part num ber /C AS latency Access tim e from CLK (MAX.) M C-4532DA727-A75 , DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C- 4532DA727 is an 33,554,432 words by 72 bits synchronous , d s o o ( 1 st edition) March 1 9 9 9 NS CP(K) © NEC C orporation 1999 NEC MC- 4532DA727 , 2 D atasheet M14210EJ1V0DS00 NEC MC- 4532DA727 Pin Configuration 168-pin Dual In-line


    OCR Scan     		PDF MC-4532DA727 32M-WORD 72-BIT C-4532DA727 uPD45128441 C-4532DA727-A75 M14210EJ1V0DS00

    2001 - Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4532DA727 is a 33,554,432 words by 72 bits synchronous , time from CLK. Part number /CAS latency Clock frequency (MAX.) MC-4532DA727EF- A75 CL = 3 CL = 2 MC-4532DA727PF- A75 CL = 3 CL = 2 MC-4532DA727XF- A75 CL = 3 CL = 2 133 MHz 100 MHz 133 MHz 100 MHz 133 MHz 100 MHz Access , Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. MC- 4532DA727


    Original     		PDF MC-4532DA727 72-BIT MC-4532DA727 PD45128441 MC-4532DA727EF-A75 MC-4532DA727PF-A75 MC-4532Dsubmersible

    Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE EO Description The MC- 4532DA727 is a 33,554,432 words by 72 bits , from CLK Pr MC-4532DA727XF- A75 133 MHz 5.4 ns 100 MHz 6.0 ns CL = 3 133 MHz 5.4 ns CL = 2 MC-4532DA727PF- A75 CL = 3 CL = 2 MC-4532DA727EF- A75 (MAX.) 100 MHz , CL = 2 MC-4532DA727XFA- A75 CL = 3 CL = 2 od (MAX.) • Fully Synchronous Dynamic RAM


    Original     		PDF MC-4532DA727 72-BIT MC-4532DA727 PD45128441 MC-4532DA727cts M01E0107

    2000 - ra11b

    Abstract: L 146 CB MC-4532DA727 MC-4532DA727EF-A75 MC-4532DA727PF-A75 PD45128441 PD45128441G5
    Text: mark 5 shows major revised points. © 1999 MC- 4532DA727 Ordering Information Part number MC-4532DA727EF- A75 , MC- 4532DA727 Synchronous Characteristics Parameter Symbol - A75 Unit MIN. MAX , DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4532DA727 is an 33,554,432 words by 72 bits synchronous , time from CLK. Part number MC-4532DA727PF- A75 (MAX.) CL = 3 133 MHz 5.4 ns 100 MHz


    Original     		PDF MC-4532DA727 32M-WORD 72-BIT MC-4532DA727 PD45128441 MC-4532DA727PF-A75 ra11b L 146 CB MC-4532DA727EF-A75 MC-4532DA727PF-A75 PD45128441G5

    2002 - ra11b

    Abstract: MC-4532DA727 MC-4532DA727EF-A75 MC-4532DA727PF-A75 MC-4532DA727XFA-A75 PD45128441 PD45128441G5 dq3cb
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE EO Description The MC- 4532DA727 is a 33,554,432 words by 72 bits , CL = 3 133 MHz 5.4 ns 100 MHz 6.0 ns CL = 3 133 MHz 5.4 ns CL = 2 MC-4532DA727XFA- A75 5.4 ns CL = 2 MC-4532DA727XF- A75 133 MHz CL = 2 MC-4532DA727PF- A75 CL = 3 CL = 2 MC-4532DA727EF- A75 (MAX.) 100 MHz 6.0 ns · Fully Synchronous Dynamic RAM, with all


    Original     		PDF MC-4532DA727 72-BIT MC-4532DA727 PD45128441 M01E0107 ra11b MC-4532DA727EF-A75 MC-4532DA727PF-A75 MC-4532DA727XFA-A75 PD45128441G5 dq3cb

    2001 - Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4532DA727 is a 33,554,432 words by 72 bits synchronous , time from CLK. Part number /CAS latency Clock frequency (MAX.) MC-4532DA727EF- A75 CL = 3 CL = 2 MC-4532DA727PF- A75 CL = 3 CL = 2 MC-4532DA727XF- A75 CL = 3 CL = 2 MC-4532DA727XFA- A75 CL = 3 CL = 2 133 MHz 100 MHz 133 , Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. MC- 4532DA727 ·


    Original     		PDF MC-4532DA727 72-BIT MC-4532DA727 PD45128441 MC-4532DA727EF-A75 MC-4532DA727PF-A75 MC-4532D. M01E0107

    1999 - Not Available

    Abstract: No abstract text available
    Text: time from CLK. Part number /CAS latency Clock frequency (MAX.) MC- 4532DA727-A75 CL = 3 133 MHz Access , DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4532DA727 is an 33,554,432 words by 72 bits synchronous , NS CP(K) Printed in Japan © 1999 MC- 4532DA727 Ordering Information Part number Clock frequency MHz (MAX.) MC-4532DA727EF- A75 133 MHz 168-pin Dual In-line Memory Module 18 pieces of


    Original     		PDF MC-4532DA727 32M-WORD 72-BIT MC-4532DA727 PD45128441 MC-4532DA727-A75

    2000 - A80L

    Abstract: PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
    Text: 2 MC-4564DC726 A80 3 2 A10 3 2 256M 32M×72 1 MC- 4532DA727 A75 3 125 100 100 77 133 3.3±0.3 4K/64 , (333) PC100 (222) PC100 (322) - × × 256M5 16M×4×4 µPD45256441 A75 3 133 MAX.(ns , ) PC133 (333) PC100 (222) PC100 (322) - × × 256M5 8M×8×4 µPD45256841 A75 3 133 MAX.(ns , ) PC100 (322) - × × 128M 8M×4×4 µ PD45128441 A75 3 133 MAX.(ns) MAX.(mA) 5.4 2 , ) PC100 (322) - × × 128M 4M×8×4 µ PD45128841 A75 3 133 MAX.(ns) MAX.(mA) 5.4 2


    Original     		PDF X13769XJ2V0CD00 DRAMSDR256M× 8K/64 54pin A10BL PC100 400mil) PC133 A80L PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333

    2001 - ELPIDA

    Abstract: EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA
    Text: PC100(2-2-2) A80 MC-4532DA726 PC100(3-2-2) A10 1 PC133(3-3-3) A75 MC- 4532DA727 1 , Cycles Rev. 3.3+/-0.3V 4K/64ms X 32M x 4 4 PC133(3-3-3) A75 uPD45128441 16M x 8 4 PC133(3-3-3) 75A HM5212805F 4 PC133(3-3-3) A75 uPD45128163 A75L Remark , Status *2 *2 *2 Low Power *1 Icc6=0.8mA 4 PC133(3-3-3) A75 uPD45128163-I X WTR , PC133(3-3-3) A75 uPD45128163-T X WTR *1 (TA=-20 to 85°C) 4M x 32 4 60 133MHz


    Original     		PDF E0226E80 M01E0107 ELPIDA EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA

    1998 - PD23C64020

    Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
    Text: (cycles (MHz) level (V) /ms) 3 2 A10 256M 32M×72 1 MC- 4532DA727 A75 MC-4532DA726 A80 A10 128M 16M×72 1 MC , Interface level (cycles /ms) 8K/64 LVTTL Package Remark 256M5 16M×4×4 µ PD45256441 A75 A80 , LVTTL Package Remark 256M5 µ PD45256841 A75 A80 5.4 6 G5: 54-pin TSOP(II) (400 mil , ) 4K/64 LVTTL Part number Package Remark 128M µ PD45128441 A75 A80 G5: 54-pin TSOP , (cycles /ms) 4K/64 LVTTL Part number Package Remark 128M µ PD45128841 A75 A80 G5: 54


    Original     		PDF X13769XJ2V0CD00 A10BL 8K/64 256M5 PD45256441 54-pin PC133 PC100 MC-22000 PD23C64020 PD45D128442 4M84 PD45D128842 0443 IC PD23C64000AL 45V16A PD264 A80L

    2014 - Not Available

    Abstract: No abstract text available
    Text: 4.56 √P*R ±1%, ±5% ±75 CSMS1206-TH-R012□T 1206 0.25W (1/4W) 15 4.08 √P*R ±1%, ±5% ±75 CSMS1206-TH-R015□T 1206 0.25W (1/4W) 20 3.54 √P*R ±1%, ±5% ±75 CSMS1206-TH-R020□T 1206 0.25W (1/4W) 22 3.37 √P*R ±1%, ±5% ±75 CSMS1206-TH-R022□T 1206 0.25W (1/4W) 25 3.16 √P*R ±1%, ±5% ±75 CSMS1206-TH-R025□T 1206 0.25W (1/4W) 30 2.89 √P*R ±1%, ±5% ±75


    Original     		PDF 75PPM 100ppm 200ppm CSMS0805-RK-R010FT IEC-60115-1 MIL-STD-202 JIS-C-5201-1

    2014 - Not Available

    Abstract: No abstract text available
    Text: 4.56 √P*R ±1%, ±5% ±75 CSMS1206-TH-R012□T 1206 0.25W (1/4W) 15 4.08 √P*R ±1%, ±5% ±75 CSMS1206-TH-R015□T 1206 0.25W (1/4W) 20 3.54 √P*R ±1%, ±5% ±75 CSMS1206-TH-R020□T 1206 0.25W (1/4W) 22 3.37 √P*R ±1%, ±5% ±75 CSMS1206-TH-R022□T 1206 0.25W (1/4W) 25 3.16 √P*R ±1%, ±5% ±75 CSMS1206-TH-R025□T 1206 0.25W (1/4W) 30 2.89 √P*R ±1%, ±5% ±75


    Original     		PDF 75PPM 100ppm 200ppm CSMS0805-RK-R010FT IEC-60115-1 MIL-STD-202 JIS-C-5201-1

    2014 - Not Available

    Abstract: No abstract text available
    Text: 4.56 √P*R ±1%, ±5% ±75 CSMS1206-TH-R012□T 1206 0.25W (1/4W) 15 4.08 √P*R ±1%, ±5% ±75 CSMS1206-TH-R015□T 1206 0.25W (1/4W) 20 3.54 √P*R ±1%, ±5% ±75 CSMS1206-TH-R020□T 1206 0.25W (1/4W) 22 3.37 √P*R ±1%, ±5% ±75 CSMS1206-TH-R022□T 1206 0.25W (1/4W) 25 3.16 √P*R ±1%, ±5% ±75 CSMS1206-TH-R025□T 1206 0.25W (1/4W) 30 2.89 √P*R ±1%, ±5% ±75


    Original     		PDF 75PPM 100ppm 200ppm CSMS0805-RK-R010FT IEC-60115-1 MIL-STD-202 JIS-C-5201-1

    2014 - RESISTOR+NETWORK+SMD+8+PIN+array+isolated+2512

    Abstract: No abstract text available
    Text: √P*R ±1%, ±5% ±75 CSMS1206-TH-R012□T 1206 0.25W (1/4W) 14 4.23 √P*R ±1%, ±5% ±75 CSMS1206-TH-R014□T 1206 0.25W (1/4W) 15 4.08 √P*R ±1%, ±5% ±75 CSMS1206-TH-R015□T 1206 0.25W (1/4W) 20 3.54 √P*R ±1%, ±5% ±75 CSMS1206-TH-R020□T 1206 0.25W (1/4W) 22 3.37 √P*R ±1%, ±5% ±75 CSMS1206-TH-R022□T 1206 0.25W (1/4W) 25 3.16 √P*R ±1%, ±5% ±75 CSMS1206-TH-R025□T


    Original     		PDF 75PPM 100ppm 200ppm CSMS0805-RK-R010FT IEC-60115-1 MIL-STD-202 JIS-C-5201-1 RESISTOR+NETWORK+SMD+8+PIN+array+isolated+2512

    2013 - Not Available

    Abstract: No abstract text available
    Text:  8.5 3  8.5 3  8.5 10 10 10 10 10 10  7.5  7.5  7.5  7.5  7.5  7.5 FKP3D001002B00_ _ _ _ FKP3D001502B00_ _ _â , 10  7.5  7.5  7.5  7.5  7.5  7.5 FKP3D011002B00_ _ _â , €‡9   10  7.5 FKP3C021502C00_ _ _ _ „ 4  9.5 13 10   FKP3C022203D00_ _ _â , €‡9.5 5 11   6 12   5 11   6 12.5 10 13 13 13 18 18  7.5


    Original     		PDF 2011/65/EU

    2014 - Not Available

    Abstract: No abstract text available
    Text: 4.56 √P*R ±1%, ±5% ±75 CSMS1206-TH-R012□T 1206 0.25W (1/4W) 15 4.08 √P*R ±1%, ±5% ±75 CSMS1206-TH-R015□T 1206 0.25W (1/4W) 20 3.54 √P*R ±1%, ±5% ±75 CSMS1206-TH-R020□T 1206 0.25W (1/4W) 22 3.37 √P*R ±1%, ±5% ±75 CSMS1206-TH-R022□T 1206 0.25W (1/4W) 25 3.16 √P*R ±1%, ±5% ±75 CSMS1206-TH-R025□T 1206 0.25W (1/4W) 30 2.89 √P*R ±1%, ±5% ±75


    Original     		PDF 75PPM 100ppm 200ppm CSMS0805-RK-R010FT IEC-60115-1 MIL-STD-202 JIS-C-5201-1

    2001 - Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441-A75, 4564841- A75 , 4564163- A75 64M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The µPD4564441-A75, 4564841- A75 , 4564163- A75 are , joint venture DRAM company of NEC Corporation and Hitachi, Ltd. µPD4564441-A75, 4564841- A75 , 4564163- A75 Part Number [ x4, x8 ] µPD4564841G5 - A75 NEC Memory Synchronous DRAM Memory density , E0150N10 G5 : TSOP (II) µPD4564441-A75, 4564841- A75 , 4564163- A75 Pin Configurations /xxx indicates


    Original     		PDF PD4564441-A75, 4564841-A75, 4564163-A75 64M-bit 133MHz 4564163-A75 864-bit 54-pin

    2014 - Not Available

    Abstract: No abstract text available
    Text:  8.5 3  8.5 3  8.5 10 10 10 10 10 10  7.5  7.5  7.5  7.5  7.5  7.5 FKP3D001002B00_ _ _ _ FKP3D001502B00_ _ _â , 10  7.5  7.5  7.5  7.5  7.5  7.5 FKP3D011002B00_ _ _â , €‡9   10  7.5 FKP3C021502C00_ _ _ _ „ 4  9.5 13 10   FKP3C022203D00_ _ _â , €‡9.5 5 11   6 12   5 11   6 12.5 10 13 13 13 18 18  7.5


    Original     		PDF 2011/65/EU

    2000 - 45M20* crystal filter

    Abstract: No abstract text available
    Text: ±6.0 40 ±20 1.0 2.5 C D 49U 3 6 3 ±6.0 ±6.0 ±7.5 50 65 18 ±14 ±14 ±25 2.0 2.0 0.5 3.0 3.5 1.5 4 49Ux2 3 ±7.5 40 ±25 1.0 2.5 10.700 10.700 10.700 6 8 2 C D 49U 3 6 3 ±7.5 ±7.5 ±10.0 50 65 18  , ±10.0 40 ±34 1.0 2.5 16M15A 16.900 2 49U 3 ±7.5 18 ±25 0.5 1.5 16M15B 16.900 4 49Ux2 3 ±7.5 40 ±25 1.0 2.5 16M15C 16M15D 21M7A


    Original     		PDF

    103GCR050M

    Abstract: No abstract text available
    Text: ±1.5 .118 / 3.0 .1 9 7 / 5.0 ±.059 / ±7.5 / 201BCR0S0K 200 ± 10% (K) Y5F .335 , ±.059 / ±7.5 251BCR050K 250 ±10% (K) Y5F .335 / 8.5 .1 1 8 /3 .0 .197 / 5.0  , ±.059 / ±7.5 281BCR050K 280 ±10% (K) Y5F .335 / 8.5 .1 1 8 /3 .0 .197 / 5.0 ±.059 / ±7.5 301BCR050K 300 ±10% (K) Y5F .335 / 8.5 .1 1 8 /3 .0 .1 9 7 / 5.0 ±.059 / ±7.5 331BCR050K 330 ±10% (K) Y5F .335 / 8.5 .118 / 3.0 .1 9 7 / 5.0 Â


    OCR Scan     		PDF 102GQR500Z 103GQR500Z 103GCR050M

    Not Available

    Abstract: No abstract text available
    Text: ,uPD45128441-A75, 45128841- A75 and 45128163- A75 are high-speed 134,217,728-bit synchronous dynamic random-access , M14378EJ1V0DS00 (400 mil) NEC ¿¿PD45128441-A75, 45128841- A75 , 45128163- A75 Part Number [ x4, x8 , NEC ¿¿PD45128441-A75, 45128841- A75 , 45128163- A75 Pin Configurations /xxx indicates active low , atasheet M14378EJ1V0DS00 : Row address inputs : Bank select NEC ¿¿PD45128441-A75, 45128841- A75 , 45128163- A75 [¿¿PD45128841-A75] 54-pin Plastic TSO P (II) (400 mil) 4M words x 8 bits x 4 banks


    OCR Scan     		PDF 128M-bit 133MHz uPD45128441-A75 45128841-A75 45128163-A75 728-bit 54-pin M14378EJ1V0DS00 uPD45128xxx uPD45128xxxG5

    2007 - Not Available

    Abstract: No abstract text available
    Text: Poles 10M15A 10.700 3 ±7.5 18 ±25 0.5 2.0 20 3.0 // 2.0 49/M 2 10M15B 10.700 3 ±7.5 40 ±25 1.0 2.5 50 3.0 // 2.0 49/MX2 4 10M15C 10.700 3 ±7.5 60 ±25 2.0 3.0 65 3.0 // 1.5 C1 6 10M15D 10.700 3 ±7.5 90 ±25 2.0 4.0 90 3.0 // 1.5 D1 8 21M15A 21.400 3 ±7.5 18 ±25 0.5 1.5 20 1.5 // 2.0 UM1-3 2 21M15B 21.400 3 ±7.5 40


    Original     		PDF 10M15A 10M15B 49/MX2 10M15C M15C-C1-10M700: 10M15C

    SS2FLDL-TTL-10G

    Abstract: SS2FLDL-TTL-10T SS2FLDL-TTL-70F
    Text: ±2 SS2FLDL-TTL-10 10 ±.5 SS2FLDL-TTL-55 55 ±2 SS2FLDL-TTL-11 11 ±.75 SS2FLDL-TTL-60 60 ±2 SS2FLDL-TTL-12 12 ±.75 SS2FLDL-TTL-65 65 ±2.5 SS2FLDL-TTL-13 13 ±.75 SS2FLDL-TTL-70 70 ±2.5 SS2FLDL-TTL-14 14 ±.75 SS2FLDL-TTL-75 75 ±2.5 SS2FLDL-TTL-15 15 ±.75 SS2FLDL-TTL-80 80 ±2.5 SS2FLDL-TTL-16 16 ±.75 SS2FLDL-TTL-85 85 ±3 SS2FLDL-TTL-17 17 ±.75 SS2FLDL-TTL-90 90 ±3 SS2FLDL-TTL-18 18 ±.75 SS2FLDL-TTL-95 95 ±3 SS2FLDL-TTL-19 19 ±.75 SS2FLDL-TTL-100 100 ±3 SS2FLDL-TTL-20 20 ±.75 SS2FLDL-TTL-125 125 ±4 SS2FLDL-TTL


    OCR Scan     		PDF anL-TTL-100 SS2FLDL-TTL-20 SS2FLDL-TTL-125 SS2FLDL-TTL-21 SS2FLDL-TTL-150 SS2FLDL-TTL-22 SS2FLDL-TTL-175 SS2FLDL-TTL-23 SS2FLDL-TTL-200 SS2FLDL-TTL-24 SS2FLDL-TTL-10G SS2FLDL-TTL-10T SS2FLDL-TTL-70F

    SSFLDL-TTL-10G

    Abstract: SSFLDL-TTL-15T SSFLDL-TTL-25J SSFLDL-TTL-70F
    Text: ±2.5 SSFLDL-TTL-10 10 ±.5 SSFLDL-TTL-70 70 ±2.5 SSFLDL-TTL-11 11 ±.75 SSFLDL-TTL-75 75 ±2.5 SSFLDL-TTL-12 12 ±.75 SSFLDL-TTL-80 80 ±2.5 SSFLDL-TTL-13 13 ±.75 SSFLDL-TTL-85 85 ±3 SSFLDL-TTL-14 14 ±.75 SSFLDL-TTL-90 90 ±3 SSFLDL-TTL-15 15 ±.75 SSFLDL-TTL-95 95 ±3 SSFLDL-TTL-16 16 ±.75 SSFLDL-TTL-100 100 ±3 SSFLDL-TTL-17 17 ±.75 SSFLDL-TTL-125 125 ±4 SSFLDL-TTL-18 18 ±.75 SSFLDL-TTL-150 150 ±4.5 SSFLDL-TTL-19 19 ±.75 SSFLDL-TTL-175 175 ±5 SSFLDL-TTL-20 20 ±.75 SSFLDL-TTL-200 200 ±6 SSFLDL-TTL


    OCR Scan     		PDF 20DIA SSFLDL-TTL-250 SSFLDL-TTL-23 SSFLDL-TTL-275 SSFLDL-TTL-24 SSFLDL-TTL-300 SSFLDL-TTL-25 SSFLDL-TTL-350 SSFLDL-TTL-30 SSFLDL-TTL-400 SSFLDL-TTL-10G SSFLDL-TTL-15T SSFLDL-TTL-25J SSFLDL-TTL-70F

    150L

    Abstract: MD3FLDL-TTL-10G MD3FLDL-TTL-15T MD3FLDL-TTL-25J MD3FLDL-TTL-70F
    Text: ±.5 MD3FLDL-TTL-40 40 ±1.5 MD3FLDL-TTL-11 11 ±.75 MD3FLDL-TTL-45 45 ±2 MD3FLDL-TTL-12 12 ±.75 MD3FLDL-TTL-50 50 ±2 MD3FLDL-TTL-13 13 ±.75 MD3FLDL-TTL-55 55 ±2 MD3FLDL-TTL-14 14 ±.75 MD3FLDL-TTL-60 60 ±2 MD3FLDL-TTL-15 15 ±.75 MD3FLDL-TTL-65 65 ±2.5 MD3FLDL-TTL-16 16 ±.75 MD3FLDL-TTL-70 70 ±2.5 MD3FLDL-TTL-17 17 ±.75 MD3FLDL-TTL-75 75 ±2.5 MD3FLDL-TTL-18 18 ±.75 MD3FLDL-TTL-80 80 ±2.5 MD3FLDL-TTL-19 19 ±.75 MD3FLDL-TTL-85 85 ±3 MD3FLDL-TTL-20 20 ±.75 MD3FLDL-TTL-90 90 ±3 MD3FLDL-TTL-21 21 Â


    OCR Scan     		PDF 030TYP CON-TTL-70 MD3FLDL-TTL-17 MD3FLDL-TTL-75 MD3FLDL-TTL-18 MD3FLDL-TTL-80 MD3FLDL-TTL-19 MD3FLDL-TTL-85 MD3FLDL-TTL-20 MD3FLDL-TTL-90 150L MD3FLDL-TTL-10G MD3FLDL-TTL-15T MD3FLDL-TTL-25J MD3FLDL-TTL-70F
    ...

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