Not Available
Abstract: No abstract text available
Text: Access time from CLK. Part num ber /C AS latency Access tim e from CLK (MAX.) M C-4532DA727-A75 , DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C- 4532DA727 is an 33,554,432 words by 72 bits synchronous , d s o o ( 1 st edition) March 1 9 9 9 NS CP(K) © NEC C orporation 1999 NEC MC- 4532DA727 , 2 D atasheet M14210EJ1V0DS00 NEC MC- 4532DA727 Pin Configuration 168-pin Dual In-line
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MC-4532DA727
32M-WORD
72-BIT
C-4532DA727
uPD45128441
C-4532DA727-A75
M14210EJ1V0DS00
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2001 - Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4532DA727 is a 33,554,432 words by 72 bits synchronous , time from CLK. Part number /CAS latency Clock frequency (MAX.) MC-4532DA727EF- A75 CL = 3 CL = 2 MC-4532DA727PF- A75 CL = 3 CL = 2 MC-4532DA727XF- A75 CL = 3 CL = 2 133 MHz 100 MHz 133 MHz 100 MHz 133 MHz 100 MHz Access , Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. MC- 4532DA727
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MC-4532DA727
72-BIT
MC-4532DA727
PD45128441
MC-4532DA727EF-A75
MC-4532DA727PF-A75
MC-4532Dsubmersible
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Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE EO Description The MC- 4532DA727 is a 33,554,432 words by 72 bits , from CLK Pr MC-4532DA727XF- A75 133 MHz 5.4 ns 100 MHz 6.0 ns CL = 3 133 MHz 5.4 ns CL = 2 MC-4532DA727PF- A75 CL = 3 CL = 2 MC-4532DA727EF- A75 (MAX.) 100 MHz , CL = 2 MC-4532DA727XFA- A75 CL = 3 CL = 2 od (MAX.) ⢠Fully Synchronous Dynamic RAM
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MC-4532DA727
72-BIT
MC-4532DA727
PD45128441
MC-4532DA727cts
M01E0107
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2000 - ra11b
Abstract: L 146 CB MC-4532DA727 MC-4532DA727EF-A75 MC-4532DA727PF-A75 PD45128441 PD45128441G5
Text: mark 5 shows major revised points. © 1999 MC- 4532DA727 Ordering Information Part number MC-4532DA727EF- A75 , MC- 4532DA727 Synchronous Characteristics Parameter Symbol - A75 Unit MIN. MAX , DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4532DA727 is an 33,554,432 words by 72 bits synchronous , time from CLK. Part number MC-4532DA727PF- A75 (MAX.) CL = 3 133 MHz 5.4 ns 100 MHz
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MC-4532DA727
32M-WORD
72-BIT
MC-4532DA727
PD45128441
MC-4532DA727PF-A75
ra11b
L 146 CB
MC-4532DA727EF-A75
MC-4532DA727PF-A75
PD45128441G5
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2002 - ra11b
Abstract: MC-4532DA727 MC-4532DA727EF-A75 MC-4532DA727PF-A75 MC-4532DA727XFA-A75 PD45128441 PD45128441G5 dq3cb
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE EO Description The MC- 4532DA727 is a 33,554,432 words by 72 bits , CL = 3 133 MHz 5.4 ns 100 MHz 6.0 ns CL = 3 133 MHz 5.4 ns CL = 2 MC-4532DA727XFA- A75 5.4 ns CL = 2 MC-4532DA727XF- A75 133 MHz CL = 2 MC-4532DA727PF- A75 CL = 3 CL = 2 MC-4532DA727EF- A75 (MAX.) 100 MHz 6.0 ns · Fully Synchronous Dynamic RAM, with all
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MC-4532DA727
72-BIT
MC-4532DA727
PD45128441
M01E0107
ra11b
MC-4532DA727EF-A75
MC-4532DA727PF-A75
MC-4532DA727XFA-A75
PD45128441G5
dq3cb
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2001 - Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4532DA727 is a 33,554,432 words by 72 bits synchronous , time from CLK. Part number /CAS latency Clock frequency (MAX.) MC-4532DA727EF- A75 CL = 3 CL = 2 MC-4532DA727PF- A75 CL = 3 CL = 2 MC-4532DA727XF- A75 CL = 3 CL = 2 MC-4532DA727XFA- A75 CL = 3 CL = 2 133 MHz 100 MHz 133 , Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. MC- 4532DA727 ·
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MC-4532DA727
72-BIT
MC-4532DA727
PD45128441
MC-4532DA727EF-A75
MC-4532DA727PF-A75
MC-4532D.
M01E0107
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1999 - Not Available
Abstract: No abstract text available
Text: time from CLK. Part number /CAS latency Clock frequency (MAX.) MC- 4532DA727-A75 CL = 3 133 MHz Access , DATA SHEET MOS INTEGRATED CIRCUIT MC- 4532DA727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4532DA727 is an 33,554,432 words by 72 bits synchronous , NS CP(K) Printed in Japan © 1999 MC- 4532DA727 Ordering Information Part number Clock frequency MHz (MAX.) MC-4532DA727EF- A75 133 MHz 168-pin Dual In-line Memory Module 18 pieces of
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MC-4532DA727
32M-WORD
72-BIT
MC-4532DA727
PD45128441
MC-4532DA727-A75
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2000 - A80L
Abstract: PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
Text: 2 MC-4564DC726 A80 3 2 A10 3 2 256M 32M×72 1 MC- 4532DA727 A75 3 125 100 100 77 133 3.3±0.3 4K/64 , (333) PC100 (222) PC100 (322) - × × 256M5 16M×4×4 µPD45256441 A75 3 133 MAX.(ns , ) PC133 (333) PC100 (222) PC100 (322) - × × 256M5 8M×8×4 µPD45256841 A75 3 133 MAX.(ns , ) PC100 (322) - × × 128M 8M×4×4 µ PD45128441 A75 3 133 MAX.(ns) MAX.(mA) 5.4 2 , ) PC100 (322) - × × 128M 4M×8×4 µ PD45128841 A75 3 133 MAX.(ns) MAX.(mA) 5.4 2
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X13769XJ2V0CD00
DRAMSDR256M×
8K/64
54pin
A10BL
PC100
400mil)
PC133
A80L
PC100
4M84
2M164
upd432836
uPD432836AL
0443 IC
512k*8 sram 450 mil
uPD432836L
PC133-333
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2001 - ELPIDA
Abstract: EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA
Text: PC100(2-2-2) A80 MC-4532DA726 PC100(3-2-2) A10 1 PC133(3-3-3) A75 MC- 4532DA727 1 , Cycles Rev. 3.3+/-0.3V 4K/64ms X 32M x 4 4 PC133(3-3-3) A75 uPD45128441 16M x 8 4 PC133(3-3-3) 75A HM5212805F 4 PC133(3-3-3) A75 uPD45128163 A75L Remark , Status *2 *2 *2 Low Power *1 Icc6=0.8mA 4 PC133(3-3-3) A75 uPD45128163-I X WTR , PC133(3-3-3) A75 uPD45128163-T X WTR *1 (TA=-20 to 85°C) 4M x 32 4 60 133MHz
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E0226E80
M01E0107
ELPIDA
EDS5104ABTA
EDS5108ABTA
PC800
ELPIDA DRAM selection guide
1gb 144pin pc133 so dimm
200pin SO DIMM
sdram elpida
EDS5116ABTA
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1998 - PD23C64020
Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Text: (cycles (MHz) level (V) /ms) 3 2 A10 256M 32M×72 1 MC- 4532DA727 A75 MC-4532DA726 A80 A10 128M 16M×72 1 MC , Interface level (cycles /ms) 8K/64 LVTTL Package Remark 256M5 16M×4×4 µ PD45256441 A75 A80 , LVTTL Package Remark 256M5 µ PD45256841 A75 A80 5.4 6 G5: 54-pin TSOP(II) (400 mil , ) 4K/64 LVTTL Part number Package Remark 128M µ PD45128441 A75 A80 G5: 54-pin TSOP , (cycles /ms) 4K/64 LVTTL Part number Package Remark 128M µ PD45128841 A75 A80 G5: 54
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X13769XJ2V0CD00
A10BL
8K/64
256M5
PD45256441
54-pin
PC133
PC100
MC-22000
PD23C64020
PD45D128442
4M84
PD45D128842
0443 IC
PD23C64000AL
45V16A
PD264
A80L
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2014 - Not Available
Abstract: No abstract text available
Text: 4.56 âP*R ±1%, ±5% ±75 CSMS1206-TH-R012â¡T 1206 0.25W (1/4W) 15 4.08 âP*R ±1%, ±5% ±75 CSMS1206-TH-R015â¡T 1206 0.25W (1/4W) 20 3.54 âP*R ±1%, ±5% ±75 CSMS1206-TH-R020â¡T 1206 0.25W (1/4W) 22 3.37 âP*R ±1%, ±5% ±75 CSMS1206-TH-R022â¡T 1206 0.25W (1/4W) 25 3.16 âP*R ±1%, ±5% ±75 CSMS1206-TH-R025â¡T 1206 0.25W (1/4W) 30 2.89 âP*R ±1%, ±5% ±75
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75PPM
100ppm
200ppm
CSMS0805-RK-R010FT
IEC-60115-1
MIL-STD-202
JIS-C-5201-1
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2014 - Not Available
Abstract: No abstract text available
Text: 4.56 âP*R ±1%, ±5% ±75 CSMS1206-TH-R012â¡T 1206 0.25W (1/4W) 15 4.08 âP*R ±1%, ±5% ±75 CSMS1206-TH-R015â¡T 1206 0.25W (1/4W) 20 3.54 âP*R ±1%, ±5% ±75 CSMS1206-TH-R020â¡T 1206 0.25W (1/4W) 22 3.37 âP*R ±1%, ±5% ±75 CSMS1206-TH-R022â¡T 1206 0.25W (1/4W) 25 3.16 âP*R ±1%, ±5% ±75 CSMS1206-TH-R025â¡T 1206 0.25W (1/4W) 30 2.89 âP*R ±1%, ±5% ±75
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75PPM
100ppm
200ppm
CSMS0805-RK-R010FT
IEC-60115-1
MIL-STD-202
JIS-C-5201-1
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2014 - Not Available
Abstract: No abstract text available
Text: 4.56 âP*R ±1%, ±5% ±75 CSMS1206-TH-R012â¡T 1206 0.25W (1/4W) 15 4.08 âP*R ±1%, ±5% ±75 CSMS1206-TH-R015â¡T 1206 0.25W (1/4W) 20 3.54 âP*R ±1%, ±5% ±75 CSMS1206-TH-R020â¡T 1206 0.25W (1/4W) 22 3.37 âP*R ±1%, ±5% ±75 CSMS1206-TH-R022â¡T 1206 0.25W (1/4W) 25 3.16 âP*R ±1%, ±5% ±75 CSMS1206-TH-R025â¡T 1206 0.25W (1/4W) 30 2.89 âP*R ±1%, ±5% ±75
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75PPM
100ppm
200ppm
CSMS0805-RK-R010FT
IEC-60115-1
MIL-STD-202
JIS-C-5201-1
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2014 - RESISTOR+NETWORK+SMD+8+PIN+array+isolated+2512
Abstract: No abstract text available
Text: âP*R ±1%, ±5% ±75 CSMS1206-TH-R012â¡T 1206 0.25W (1/4W) 14 4.23 âP*R ±1%, ±5% ±75 CSMS1206-TH-R014â¡T 1206 0.25W (1/4W) 15 4.08 âP*R ±1%, ±5% ±75 CSMS1206-TH-R015â¡T 1206 0.25W (1/4W) 20 3.54 âP*R ±1%, ±5% ±75 CSMS1206-TH-R020â¡T 1206 0.25W (1/4W) 22 3.37 âP*R ±1%, ±5% ±75 CSMS1206-TH-R022â¡T 1206 0.25W (1/4W) 25 3.16 âP*R ±1%, ±5% ±75 CSMS1206-TH-R025â¡T
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75PPM
100ppm
200ppm
CSMS0805-RK-R010FT
IEC-60115-1
MIL-STD-202
JIS-C-5201-1
RESISTOR+NETWORK+SMD+8+PIN+array+isolated+2512
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2013 - Not Available
Abstract: No abstract text available
Text: â8.5 3 â8.5 3 â8.5 10 10 10 10 10 10 â7.5 â7.5 â7.5 â7.5 â7.5 â7.5 FKP3D001002B00_â_â_â_ FKP3D001502B00_â_â_â , 10 â7.5 â7.5 â7.5 â7.5 â7.5 â7.5 FKP3D011002B00_â_â_â , 9ââ 10 â7.5 FKP3C021502C00_â_â_â_ â 4 â9.5 13 10ââ FKP3C022203D00_â_â_â , 9.5 5 11ââ 6 12ââ 5 11ââ 6 12.5 10 13 13 13 18 18 â7.5
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2011/65/EU
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2014 - Not Available
Abstract: No abstract text available
Text: 4.56 âP*R ±1%, ±5% ±75 CSMS1206-TH-R012â¡T 1206 0.25W (1/4W) 15 4.08 âP*R ±1%, ±5% ±75 CSMS1206-TH-R015â¡T 1206 0.25W (1/4W) 20 3.54 âP*R ±1%, ±5% ±75 CSMS1206-TH-R020â¡T 1206 0.25W (1/4W) 22 3.37 âP*R ±1%, ±5% ±75 CSMS1206-TH-R022â¡T 1206 0.25W (1/4W) 25 3.16 âP*R ±1%, ±5% ±75 CSMS1206-TH-R025â¡T 1206 0.25W (1/4W) 30 2.89 âP*R ±1%, ±5% ±75
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75PPM
100ppm
200ppm
CSMS0805-RK-R010FT
IEC-60115-1
MIL-STD-202
JIS-C-5201-1
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2001 - Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441-A75, 4564841- A75 , 4564163- A75 64M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The µPD4564441-A75, 4564841- A75 , 4564163- A75 are , joint venture DRAM company of NEC Corporation and Hitachi, Ltd. µPD4564441-A75, 4564841- A75 , 4564163- A75 Part Number [ x4, x8 ] µPD4564841G5 - A75 NEC Memory Synchronous DRAM Memory density , E0150N10 G5 : TSOP (II) µPD4564441-A75, 4564841- A75 , 4564163- A75 Pin Configurations /xxx indicates
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PD4564441-A75,
4564841-A75,
4564163-A75
64M-bit
133MHz
4564163-A75
864-bit
54-pin
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2014 - Not Available
Abstract: No abstract text available
Text: â8.5 3 â8.5 3 â8.5 10 10 10 10 10 10 â7.5 â7.5 â7.5 â7.5 â7.5 â7.5 FKP3D001002B00_â_â_â_ FKP3D001502B00_â_â_â , 10 â7.5 â7.5 â7.5 â7.5 â7.5 â7.5 FKP3D011002B00_â_â_â , 9ââ 10 â7.5 FKP3C021502C00_â_â_â_ â 4 â9.5 13 10ââ FKP3C022203D00_â_â_â , 9.5 5 11ââ 6 12ââ 5 11ââ 6 12.5 10 13 13 13 18 18 â7.5
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2011/65/EU
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2000 - 45M20* crystal filter
Abstract: No abstract text available
Text: ±6.0 40 ±20 1.0 2.5 C D 49U 3 6 3 ±6.0 ±6.0 ±7.5 50 65 18 ±14 ±14 ±25 2.0 2.0 0.5 3.0 3.5 1.5 4 49Ux2 3 ±7.5 40 ±25 1.0 2.5 10.700 10.700 10.700 6 8 2 C D 49U 3 6 3 ±7.5 ±7.5 ±10.0 50 65 18  , ±10.0 40 ±34 1.0 2.5 16M15A 16.900 2 49U 3 ±7.5 18 ±25 0.5 1.5 16M15B 16.900 4 49Ux2 3 ±7.5 40 ±25 1.0 2.5 16M15C 16M15D 21M7A
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103GCR050M
Abstract: No abstract text available
Text: ±1.5 .118 / 3.0 .1 9 7 / 5.0 ±.059 / ±7.5 / 201BCR0S0K 200 ± 10% (K) Y5F .335 , ±.059 / ±7.5 251BCR050K 250 ±10% (K) Y5F .335 / 8.5 .1 1 8 /3 .0 .197 / 5.0  , ±.059 / ±7.5 281BCR050K 280 ±10% (K) Y5F .335 / 8.5 .1 1 8 /3 .0 .197 / 5.0 ±.059 / ±7.5 301BCR050K 300 ±10% (K) Y5F .335 / 8.5 .1 1 8 /3 .0 .1 9 7 / 5.0 ±.059 / ±7.5 331BCR050K 330 ±10% (K) Y5F .335 / 8.5 .118 / 3.0 .1 9 7 / 5.0 Â
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102GQR500Z
103GQR500Z
103GCR050M
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Not Available
Abstract: No abstract text available
Text: ,uPD45128441-A75, 45128841- A75 and 45128163- A75 are high-speed 134,217,728-bit synchronous dynamic random-access , M14378EJ1V0DS00 (400 mil) NEC ¿¿PD45128441-A75, 45128841- A75 , 45128163- A75 Part Number [ x4, x8 , NEC ¿¿PD45128441-A75, 45128841- A75 , 45128163- A75 Pin Configurations /xxx indicates active low , atasheet M14378EJ1V0DS00 : Row address inputs : Bank select NEC ¿¿PD45128441-A75, 45128841- A75 , 45128163- A75 [¿¿PD45128841-A75] 54-pin Plastic TSO P (II) (400 mil) 4M words x 8 bits x 4 banks
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128M-bit
133MHz
uPD45128441-A75
45128841-A75
45128163-A75
728-bit
54-pin
M14378EJ1V0DS00
uPD45128xxx
uPD45128xxxG5
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2007 - Not Available
Abstract: No abstract text available
Text: Poles 10M15A 10.700 3 ±7.5 18 ±25 0.5 2.0 20 3.0 // 2.0 49/M 2 10M15B 10.700 3 ±7.5 40 ±25 1.0 2.5 50 3.0 // 2.0 49/MX2 4 10M15C 10.700 3 ±7.5 60 ±25 2.0 3.0 65 3.0 // 1.5 C1 6 10M15D 10.700 3 ±7.5 90 ±25 2.0 4.0 90 3.0 // 1.5 D1 8 21M15A 21.400 3 ±7.5 18 ±25 0.5 1.5 20 1.5 // 2.0 UM1-3 2 21M15B 21.400 3 ±7.5 40
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10M15A
10M15B
49/MX2
10M15C
M15C-C1-10M700:
10M15C
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SS2FLDL-TTL-10G
Abstract: SS2FLDL-TTL-10T SS2FLDL-TTL-70F
Text: ±2 SS2FLDL-TTL-10 10 ±.5 SS2FLDL-TTL-55 55 ±2 SS2FLDL-TTL-11 11 ±.75 SS2FLDL-TTL-60 60 ±2 SS2FLDL-TTL-12 12 ±.75 SS2FLDL-TTL-65 65 ±2.5 SS2FLDL-TTL-13 13 ±.75 SS2FLDL-TTL-70 70 ±2.5 SS2FLDL-TTL-14 14 ±.75 SS2FLDL-TTL-75 75 ±2.5 SS2FLDL-TTL-15 15 ±.75 SS2FLDL-TTL-80 80 ±2.5 SS2FLDL-TTL-16 16 ±.75 SS2FLDL-TTL-85 85 ±3 SS2FLDL-TTL-17 17 ±.75 SS2FLDL-TTL-90 90 ±3 SS2FLDL-TTL-18 18 ±.75 SS2FLDL-TTL-95 95 ±3 SS2FLDL-TTL-19 19 ±.75 SS2FLDL-TTL-100 100 ±3 SS2FLDL-TTL-20 20 ±.75 SS2FLDL-TTL-125 125 ±4 SS2FLDL-TTL
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anL-TTL-100
SS2FLDL-TTL-20
SS2FLDL-TTL-125
SS2FLDL-TTL-21
SS2FLDL-TTL-150
SS2FLDL-TTL-22
SS2FLDL-TTL-175
SS2FLDL-TTL-23
SS2FLDL-TTL-200
SS2FLDL-TTL-24
SS2FLDL-TTL-10G
SS2FLDL-TTL-10T
SS2FLDL-TTL-70F
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SSFLDL-TTL-10G
Abstract: SSFLDL-TTL-15T SSFLDL-TTL-25J SSFLDL-TTL-70F
Text: ±2.5 SSFLDL-TTL-10 10 ±.5 SSFLDL-TTL-70 70 ±2.5 SSFLDL-TTL-11 11 ±.75 SSFLDL-TTL-75 75 ±2.5 SSFLDL-TTL-12 12 ±.75 SSFLDL-TTL-80 80 ±2.5 SSFLDL-TTL-13 13 ±.75 SSFLDL-TTL-85 85 ±3 SSFLDL-TTL-14 14 ±.75 SSFLDL-TTL-90 90 ±3 SSFLDL-TTL-15 15 ±.75 SSFLDL-TTL-95 95 ±3 SSFLDL-TTL-16 16 ±.75 SSFLDL-TTL-100 100 ±3 SSFLDL-TTL-17 17 ±.75 SSFLDL-TTL-125 125 ±4 SSFLDL-TTL-18 18 ±.75 SSFLDL-TTL-150 150 ±4.5 SSFLDL-TTL-19 19 ±.75 SSFLDL-TTL-175 175 ±5 SSFLDL-TTL-20 20 ±.75 SSFLDL-TTL-200 200 ±6 SSFLDL-TTL
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20DIA
SSFLDL-TTL-250
SSFLDL-TTL-23
SSFLDL-TTL-275
SSFLDL-TTL-24
SSFLDL-TTL-300
SSFLDL-TTL-25
SSFLDL-TTL-350
SSFLDL-TTL-30
SSFLDL-TTL-400
SSFLDL-TTL-10G
SSFLDL-TTL-15T
SSFLDL-TTL-25J
SSFLDL-TTL-70F
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150L
Abstract: MD3FLDL-TTL-10G MD3FLDL-TTL-15T MD3FLDL-TTL-25J MD3FLDL-TTL-70F
Text: ±.5 MD3FLDL-TTL-40 40 ±1.5 MD3FLDL-TTL-11 11 ±.75 MD3FLDL-TTL-45 45 ±2 MD3FLDL-TTL-12 12 ±.75 MD3FLDL-TTL-50 50 ±2 MD3FLDL-TTL-13 13 ±.75 MD3FLDL-TTL-55 55 ±2 MD3FLDL-TTL-14 14 ±.75 MD3FLDL-TTL-60 60 ±2 MD3FLDL-TTL-15 15 ±.75 MD3FLDL-TTL-65 65 ±2.5 MD3FLDL-TTL-16 16 ±.75 MD3FLDL-TTL-70 70 ±2.5 MD3FLDL-TTL-17 17 ±.75 MD3FLDL-TTL-75 75 ±2.5 MD3FLDL-TTL-18 18 ±.75 MD3FLDL-TTL-80 80 ±2.5 MD3FLDL-TTL-19 19 ±.75 MD3FLDL-TTL-85 85 ±3 MD3FLDL-TTL-20 20 ±.75 MD3FLDL-TTL-90 90 ±3 MD3FLDL-TTL-21 21 Â
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030TYP
CON-TTL-70
MD3FLDL-TTL-17
MD3FLDL-TTL-75
MD3FLDL-TTL-18
MD3FLDL-TTL-80
MD3FLDL-TTL-19
MD3FLDL-TTL-85
MD3FLDL-TTL-20
MD3FLDL-TTL-90
150L
MD3FLDL-TTL-10G
MD3FLDL-TTL-15T
MD3FLDL-TTL-25J
MD3FLDL-TTL-70F
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