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C10082CA
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Hamamatsu
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Mini-spectrometer TM series High sensitivity type (integrated with back-thinned type CCD image sensor) |
Original |
PDF
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303.34KB |
4 |
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C10082CAH
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Hamamatsu
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Mini-spectrometer TM series High sensitivity type (integrated with back-thinned type CCD image sensor) |
Original |
PDF
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303.35KB |
4 |
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C10082MD
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Hamamatsu
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Mini-spectrometer TM series Integrating optical system, image sensor and circuit |
Original |
PDF
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296.05KB |
4 |
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C10083CA
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Hamamatsu
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Mini-spectrometer TM series High sensitivity type (integrated with back-thinned type CCD image sensor) |
Original |
PDF
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303.35KB |
4 |
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C10083CAH
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Hamamatsu
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Mini-spectrometer TM series High sensitivity type (integrated with back-thinned type CCD image sensor) |
Original |
PDF
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303.34KB |
4 |
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C10083MD
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Hamamatsu
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Mini-spectrometer TM series Integrating optical system, image sensor and circuit |
Original |
PDF
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296.04KB |
4 |
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C-1008E
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Para Light
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Common cathode hi.effi red alpha-numeric display |
Original |
PDF
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84.92KB |
1 |
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C-1008G
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Para Light
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Common cathode green alpha-numeric display |
Original |
PDF
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84.92KB |
1 |
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C-1008H
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Para Light
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Common cathode red alpha-numeric display |
Original |
PDF
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84.92KB |
1 |
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C-1008SR
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Para Light
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Common cathode super red alpha-numeric display |
Original |
PDF
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84.92KB |
1 |
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C-1008Y
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Para Light
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Common cathode yellow alpha-numeric display |
Original |
PDF
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84.92KB |
1 |
KBPC1008
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SUNMATE electronic Co., LTD
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High current bridge rectifier with 10.0 A average forward output current, 50 to 1000 V voltage range, isolated epoxy case, and 2500 V case-to-terminal isolation voltage, suitable for single-phase applications. |
Original |
PDF
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2SC1008(RANGE:120-240)
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JCET Group
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NPN transistor in TO-92 package for general purpose switching and amplification, with 60V collector-emitter voltage, 700mA collector current, 800mW power dissipation, and DC current gain ranging from 40 to 400. |
Original |
PDF
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2SC1008(RANGE:200-400)
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JCET Group
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NPN transistor in TO-92 package, rated for 60 V collector-emitter voltage, 700 mA collector current, with a DC current gain ranging from 40 to 400 and a transition frequency of 30 MHz. |
Original |
PDF
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PBC-1008A-R28T
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JWD
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Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra low DCR, and RoHS compliance. |
Original |
PDF
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KBPC1008
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Microdiode Semiconductor (MDD)
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Silicon bridge rectifiers, reverse voltage 50 to 1000 volts, forward current 10.0 amperes. |
Original |
PDF
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2SC1008-TA
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JCET Group
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NPN transistor in TO-92 package for general purpose switching and amplification, with 60V collector-emitter voltage, 700mA collector current, 800mW power dissipation, and DC current gain ranging from 40 to 400. |
Original |
PDF
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PBC-1008A-R30T
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JWD
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Power Bead Inductor PBC-1008A-RXXT series features single turn construction, ferrite core, ultra low DCR, high energy density, flat inductance over frequency, rated current up to 64A, operating temperature from -40°C to +125°C, and complies with AEC-Q200. |
Original |
PDF
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PBC-1008A-R15T
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JWD
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Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra low DCR, and RoHS compliance. |
Original |
PDF
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PBC-1008A-R22T
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JWD
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Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra low DCR, and RoHS compliance. |
Original |
PDF
|
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KBPC1008
