Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    C SOURCE CODE FOR INVERTER Search Results

    C SOURCE CODE FOR INVERTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM32ED70J476KE02L
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive PDF
    GRM022R61C104ME05L
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose PDF
    GRM033D70J224ME01D
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose PDF
    GRM155R61H334KE01J
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose PDF
    GRM2195C2A273JE01J
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose PDF

    C SOURCE CODE FOR INVERTER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TPC8022-H

    Contextual Info: TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U−MOS III TPC8022-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package


    Original
    TPC8022-H TPC8022-H PDF

    TPC8022-H

    Abstract: TPC8022
    Contextual Info: TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U−MOS III TPC8022-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications CCFL Inverter Applications Unit: mm z Small footprint due to a small and thin package


    Original
    TPC8022-H TPC8022-H TPC8022 PDF

    ANPEC

    Abstract: APM7512NF STD-020C A102 ANPEC marking date code
    Contextual Info: APM7512NF N-Channel Enhancement Mode MOSFET Features • Pin Description 75V/80A , RDS ON = 9.1mΩ (typ.) @ VGS= 10V • • • Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TO-220 D Applications • G Power Management for Inverter Systems


    Original
    APM7512NF 5V/80A O-220 APM7512N APM7512N MIL-STD-883D-2003 MIL-STD-883D-1005 ANPEC APM7512NF STD-020C A102 ANPEC marking date code PDF

    IRFHM830PbF

    Abstract: IRFHM830TR2PBF IRFHM830 AN-1154 J-STD-020D 13002A SPN 0215 IRFHM830TR IRFHM830P
    Contextual Info: PD - 97547A IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) 30 V 3.8 mΩ 15 2.5 RG (typical) ID nC Ω 40h (@Tc(Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET


    Original
    7547A IRFHM830PbF IRFHM830TRPBF IRFHM830TR2PBF IRFHM830PbF IRFHM830TR2PBF IRFHM830 AN-1154 J-STD-020D 13002A SPN 0215 IRFHM830TR IRFHM830P PDF

    Contextual Info: IRFR7440PbF IRFR7440PBF IRFR7440TRPBF IRFU7440PbF IRFU7440PBF Applications Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Electronic ballast applications


    Original
    IRFR7440PbF IRFR7440TRPBF IRFU7440PbF IRFU7440TRPbF IRFR7440PBF O-251AA) PDF

    PQFN footprint

    Abstract: diode marking 33a on semiconductor IRFH5210TR2PBF marking 33a on semiconductor AN-1154 IRFH5210TRPBF IRFH5210
    Contextual Info: PD - 97490 IRFH5210PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 100 V 14.9 mΩ Qg (typical) RG (typical) 39 nC 1.8 Ω ID 55 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors


    Original
    IRFH5210PbF IRFH5210TRPBF IRFH5210TR2PBF PQFN footprint diode marking 33a on semiconductor IRFH5210TR2PBF marking 33a on semiconductor AN-1154 IRFH5210TRPBF IRFH5210 PDF

    IRFH5106PbF

    Abstract: AN-1154 IRFH5106
    Contextual Info: PD -95959 IRFH5106PbF HEXFET Power MOSFET VDS 60 V 5.6 mΩ nC RG typical 50 1.4 ID 100 A RDS(on) max (@VGS = 10V) Qg (typical) (@Tc(Bottom) = 25°C) Ω PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors


    Original
    IRFH5106PbF IRFH5106TRPBF IRFH5106TR2PBF 077mH, IRFH5106PbF AN-1154 IRFH5106 PDF

    IRFH5004TR2PBF

    Abstract: AN-1154 IRFH5004TRPBF
    Contextual Info: PD -97450 IRFH5004PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 40 V 2.6 mΩ 73 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors


    Original
    IRFH5004PbF IRFH5004TR2PBF AN-1154 IRFH5004TRPBF PDF

    IRFH5110

    Abstract: max9337
    Contextual Info: PD -96294A IRFH5110PbF HEXFET Power MOSFET VDS 100 V RDS on max 12.4 mΩ Qg (typical) 54 nC RG (typical) 1.5 Ω 63 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors


    Original
    -96294A IRFH5110PbF 136mH, IRFH5110 max9337 PDF

    marking 43a

    Abstract: marking code 43a IRFH5207TR2PBF IRFH5207TRPBF AN-1154 IRFH5207
    Contextual Info: PD -96298 IRFH5207PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 75 V 9.6 mΩ Qg (typical) RG (typical) 39 nC 1.7 Ω ID 71 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors


    Original
    IRFH5207PbF IRFH5207TRPBF IRFH5207TR2PBF 095mH, marking 43a marking code 43a IRFH5207TR2PBF IRFH5207TRPBF AN-1154 IRFH5207 PDF

    IRFH5206

    Abstract: max8750 IRFH5206TR2PBF AN-1154 IRFH5206TRPBF
    Contextual Info: PD -97466 IRFH5206PbF HEXFET Power MOSFET VDS 60 V RDS on max 6.7 m 40 1.7 nC 89 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) : : PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors


    Original
    IRFH5206PbF IRFH5206 max8750 IRFH5206TR2PBF AN-1154 IRFH5206TRPBF PDF

    IRFH5250TRPBF

    Abstract: irfh5250 IRFH5250TR2PBF AN-1154 IRFH5250PBF
    Contextual Info: PD -96265 IRFH5250PbF HEXFET Power MOSFET VDS 25 RDS on max 1.15 m 52 1.3 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) V : : h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET


    Original
    IRFH5250PbF IRFH5250TRPBF IRFH5250TR2PBF IRFH5250TRPBF irfh5250 IRFH5250TR2PBF AN-1154 IRFH5250PBF PDF

    IRFH5010TR

    Abstract: IRFH5010TRPBF PQFN footprint mosfet 500V 50A IRFH5010 AN-1154 IRFH5010TR2PBF
    Contextual Info: PD -96297 IRFH5010PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 100 V 9.0 mΩ 65 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors


    Original
    IRFH5010PbF IRFH5010TRPBF IRFH5010TR2PBF 181mH, IRFH5010TR IRFH5010TRPBF PQFN footprint mosfet 500V 50A IRFH5010 AN-1154 IRFH5010TR2PBF PDF

    IRFH5207

    Abstract: N-Channel 40V MOSFET
    Contextual Info: PD -96298A IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors


    Original
    -96298A IRFH5207PbF 095mH, IRFH5207 N-Channel 40V MOSFET PDF

    IRFH5006

    Abstract: IRFH5006TR2PBF AN-1154 IRFH5006PbF
    Contextual Info: PD -95961 IRFH5006PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 60 V 4.1 mΩ 67 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors


    Original
    IRFH5006PbF IRFH5006TRPBF IRFH5006TR2PBF IRFH5006 AN-1154 IRFH5006PbF PDF

    D47F

    Abstract: IRFH5210
    Contextual Info: PD - 97490A IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS on max 14.9 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 55 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors


    Original
    7490A IRFH5210PbF D47F IRFH5210 PDF

    IRFH5015TRPBF

    Abstract: IRFH5015TR2PBF marking 34A AN-1154 IRFH5015 IRFH5015PbF
    Contextual Info: PD - 97446 IRFH5015PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 150 V 31 mΩ Qg (typical) RG (typical) 33 nC 1.7 Ω ID 56 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Primary Side Synchronous Rectification Inverters for DC Motors


    Original
    IRFH5015PbF IRFH5015TRPBF IRFH5015TR2PBF IRFH5015TRPBF IRFH5015TR2PBF marking 34A AN-1154 IRFH5015 IRFH5015PbF PDF

    irfh5007

    Abstract: AN-1154 IRFH5007TR
    Contextual Info: PD -95958 IRFH5007PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 75 V 5.9 mΩ 65 nC 1.2 Ω 100 (@Tc(Bottom) = 25°C) h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors


    Original
    IRFH5007PbF irfh5007 AN-1154 IRFH5007TR PDF

    APM4010N

    Abstract: APM4010 apm*4010n APM4010NU apm*4010 013A1 APM40 A102 STD-020C
    Contextual Info: APM4010NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/57A, RDS ON =8.2mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=5V • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 D Applications • Power Management in LCD monitor/TV inverter.


    Original
    APM4010NU 0V/57A, O-252 APM4010N APM4010N APM4010 apm*4010n APM4010NU apm*4010 013A1 APM40 A102 STD-020C PDF

    to252 footprint wave soldering

    Abstract: A102 APM4012N APM4012NU STD-020C apm4012
    Contextual Info: APM4012NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/55A, RDS ON =9mΩ (typ.) @ VGS=10V RDS(ON)=12mΩ (typ.) @ VGS=5V • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 D Applications • Power Management in LCD monitor/TV inverter.


    Original
    APM4012NU 0V/55A, O-252 APM4012N APM4012N to252 footprint wave soldering A102 APM4012NU STD-020C apm4012 PDF

    tpc8116

    Abstract: TPC8116-H dcdc power inverter
    Contextual Info: TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8116-H High Efficiency DC/DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications CCFL Inverter Applications • Small footprint due to a small and thin package


    Original
    TPC8116-H tpc8116 TPC8116-H dcdc power inverter PDF

    Contextual Info: IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS on max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications


    Original
    IRFH5010PbF PDF

    IRFH5250

    Abstract: IRFH5250TRPBF
    Contextual Info: PD -96265B IRFH5250PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET


    Original
    -96265B IRFH5250PbF IRFH5250 IRFH5250TRPBF PDF

    Contextual Info: IRFH5215PbF HEXFET Power MOSFET VDS 150 V RDS on max 58 mΩ Qg (typical) 21 nC RG (typical) 2.3 Ω 27 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications


    Original
    IRFH5215PbF IRFH5215TRPBF IRFH5215TR2PBF PDF