C SOURCE CODE FOR INVERTER Search Results

TPC8022-H

Contextual Info: TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U−MOS III TPC8022-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package

TPC8022-H

Abstract: TPC8022
Contextual Info: TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U−MOS III TPC8022-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications CCFL Inverter Applications Unit: mm z Small footprint due to a small and thin package

ANPEC

Abstract: APM7512NF STD-020C A102 ANPEC marking date code
Contextual Info: APM7512NF N-Channel Enhancement Mode MOSFET Features • Pin Description 75V/80A , RDS ON = 9.1mΩ (typ.) @ VGS= 10V • • • Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TO-220 D Applications • G Power Management for Inverter Systems

IRFHM830PbF

Abstract: IRFHM830TR2PBF IRFHM830 AN-1154 J-STD-020D 13002A SPN 0215 IRFHM830TR IRFHM830P
Contextual Info: PD - 97547A IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) 30 V 3.8 mΩ 15 2.5 RG (typical) ID nC Ω 40h (@Tc(Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET

Contextual Info: IRFR7440PbF IRFR7440PBF IRFR7440TRPBF IRFU7440PbF IRFU7440PBF Applications Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Electronic ballast applications

PQFN footprint

Abstract: diode marking 33a on semiconductor IRFH5210TR2PBF marking 33a on semiconductor AN-1154 IRFH5210TRPBF IRFH5210
Contextual Info: PD - 97490 IRFH5210PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 100 V 14.9 mΩ Qg (typical) RG (typical) 39 nC 1.8 Ω ID 55 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

IRFH5106PbF

Abstract: AN-1154 IRFH5106
Contextual Info: PD -95959 IRFH5106PbF HEXFET Power MOSFET VDS 60 V 5.6 mΩ nC RG typical 50 1.4 ID 100 A RDS(on) max (@VGS = 10V) Qg (typical) (@Tc(Bottom) = 25°C) Ω PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

IRFH5004TR2PBF

Abstract: AN-1154 IRFH5004TRPBF
Contextual Info: PD -97450 IRFH5004PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 40 V 2.6 mΩ 73 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

IRFH5110

Abstract: max9337
Contextual Info: PD -96294A IRFH5110PbF HEXFET Power MOSFET VDS 100 V RDS on max 12.4 mΩ Qg (typical) 54 nC RG (typical) 1.5 Ω 63 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors

marking 43a

Abstract: marking code 43a IRFH5207TR2PBF IRFH5207TRPBF AN-1154 IRFH5207
Contextual Info: PD -96298 IRFH5207PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 75 V 9.6 mΩ Qg (typical) RG (typical) 39 nC 1.7 Ω ID 71 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

IRFH5206

Abstract: max8750 IRFH5206TR2PBF AN-1154 IRFH5206TRPBF
Contextual Info: PD -97466 IRFH5206PbF HEXFET Power MOSFET VDS 60 V RDS on max 6.7 m 40 1.7 nC 89 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) : : PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

IRFH5250TRPBF

Abstract: irfh5250 IRFH5250TR2PBF AN-1154 IRFH5250PBF
Contextual Info: PD -96265 IRFH5250PbF HEXFET Power MOSFET VDS 25 RDS on max 1.15 m 52 1.3 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) V : : h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

IRFH5010TR

Abstract: IRFH5010TRPBF PQFN footprint mosfet 500V 50A IRFH5010 AN-1154 IRFH5010TR2PBF
Contextual Info: PD -96297 IRFH5010PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 100 V 9.0 mΩ 65 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors

IRFH5207

Abstract: N-Channel 40V MOSFET
Contextual Info: PD -96298A IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

IRFH5006

Abstract: IRFH5006TR2PBF AN-1154 IRFH5006PbF
Contextual Info: PD -95961 IRFH5006PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 60 V 4.1 mΩ 67 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

D47F

Abstract: IRFH5210
Contextual Info: PD - 97490A IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS on max 14.9 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 55 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

IRFH5015TRPBF

Abstract: IRFH5015TR2PBF marking 34A AN-1154 IRFH5015 IRFH5015PbF
Contextual Info: PD - 97446 IRFH5015PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 150 V 31 mΩ Qg (typical) RG (typical) 33 nC 1.7 Ω ID 56 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Primary Side Synchronous Rectification Inverters for DC Motors

irfh5007

Abstract: AN-1154 IRFH5007TR
Contextual Info: PD -95958 IRFH5007PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 75 V 5.9 mΩ 65 nC 1.2 Ω 100 (@Tc(Bottom) = 25°C) h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

APM4010N

Abstract: APM4010 apm*4010n APM4010NU apm*4010 013A1 APM40 A102 STD-020C
Contextual Info: APM4010NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/57A, RDS ON =8.2mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=5V • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 D Applications • Power Management in LCD monitor/TV inverter.

to252 footprint wave soldering

Abstract: A102 APM4012N APM4012NU STD-020C apm4012
Contextual Info: APM4012NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/55A, RDS ON =9mΩ (typ.) @ VGS=10V RDS(ON)=12mΩ (typ.) @ VGS=5V • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 D Applications • Power Management in LCD monitor/TV inverter.

tpc8116

Abstract: TPC8116-H dcdc power inverter
Contextual Info: TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8116-H High Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications CCFL Inverter Applications • Small footprint due to a small and thin package

Contextual Info: IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS on max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications

IRFH5250

Abstract: IRFH5250TRPBF
Contextual Info: PD -96265B IRFH5250PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

Contextual Info: IRFH5215PbF HEXFET Power MOSFET VDS 150 V RDS on max 58 mΩ Qg (typical) 21 nC RG (typical) 2.3 Ω 27 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications