C 945 APPLICATION NOTE Search Results

1-173977-4

Abstract: 1-173977-0
Contextual Info: Catalog 1307515 Issued 9-99 C T-2m m Connectors Continued Receptacle Assemblies, MT Connectors (2mm Pitch) Receptacle Assemblies (Wire Application Side) Internal Interconnects Material and Finish: Housing— UL94V-0 rated, glass-filled P.B.T., see note below for color

E4432

Abstract: AN459 D980 F133 Fc-300K
Contextual Info: AN459 M EASUREMENT R ESULTS FOR Si4430-B A N D 9 5 0 M H Z ARIB STD-T96 C OMPLIANCE 1. Introduction This application note demonstrates the compliance of the Si4430-B1 RFIC with the regulatory requirements of ARIB STD T96 V1.0, dated June 6th 2008 . The spurious emission performance measurements are conducted in

MK940

Abstract: SPECTROL 510 MK9-40 Calex 945DC Spectrol
Contextual Info: Models 940 and 945 DC Transmitters Features Description n 4 to 20mA Output n 0 to +10V Input - Model 940 n 0 to 50 mV Input - Model 945 n 700 Volts DC Isolation n PC Board Mount Modular Design for OEM Applications The CALEX Model 940 and 945 are fully DC isolated voltage

MK940

Abstract: Calex DC Transmitters 4 to 20mA transmitter schematic MK9-40 Schematic source digital scale from 0 to 5 volts bourns 3006y Beckman potentiometer 3355 bourns bourns multiturn
Contextual Info: Models 940 and 945 DC Transmitters Features Description ! 4 to 20mA Output ! 0 to +10V Input - Model 940 ! 0 to 50 mV Input - Model 945 ! 700 Volts DC Isolation ! PC Board Mount Modular Design for OEM Applications The CALEX Model 940 and 945 are fully DC isolated voltage

MRF184

Abstract: transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France

MK940

Abstract: 4 to 20mA transmitter schematic MK9-40 4 to 20ma current source circuit diagram Schematic source digital scale from 0 to 5 volts Beckman potentiometer 945 diagram 3355 bourns bourns 3006y Calex
Contextual Info: Models 940 and 945 Features • * • 4 to 20mA Output ■ 0 to +10V Input - Model 940 ■ 0 to 50 mV Input - Model 945 ■ 700 Volts DC Isolation ' DC Transmitters ■ PC Board Mount Modular Design for OEM Applications ■ Convenient Mounting Kit Available for

s2513

Abstract: MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438
Contextual Info: Patent #: P-2631996 Patented Security: International Approvals: UL # E146370 CSA # LR50370-10 VDE # 57986 SEV # 100989 Protection: Material: Rated Temperature: Seal: Resistant to: Up to 70 PSI Polyamide - flame retardant, self-extinguishing nylon with neoprene bushing

500 watts amplifier schematic diagram pcb layout

Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
Contextual Info: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a

600G005

Abstract: transistor 945 945 diode Glenair 28840 transistor 945 datasheet transistor C 945 MIL-C-28840 945 transistor c 945 transistor transistor 945 p
Contextual Info: Torque Wrenches 600G005 MIL-C-28840 Plug and Receptacle Holder Polarization 1, 2, 3, 4, 5, 6 600 Product Series G 005 - 17 Connector Designator Basic Number P Shell Size Omit for Kit KIT - Complete Kit 1 - KIT Holder Type P - Plug Holder R - Receptacle Holder

Contextual Info: HMC838LP6CE v05.0612 FRACTIONAL-N PLL WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz Plls w/ integrated vco - SMT Features 1 • Tri-band RF Bandwidth: 795 - 945, 1590 - 1890, 3180 - 3780 MHz • 24-bit Step Size, Resolution 3 Hz typ • Ultra Low Phase Noise

Contextual Info: LS2-1XX-XX-XX-D-XXX-X REVISION R DO NOT SCALE FROM THIS PRINT C LEAD STYLE -01: THROUGH HOLE -02: SURFACE MOUNT SEE FIG. 2 (No OF POS x .07874[2.0000]) +.0618[1.570]) .010[.25] (No OF POS -1) x .07874[2.0000] REF "A" .2075 5.270 REF "A" 01 SEE NOTE 6 FIG 1

Contextual Info: HMC838LP6CE v05.0612 FRACTIONAL-N PLL WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz Plls w/ integrated vco - sMt Features 1 • tri-band rF Bandwidth: 795 - 945, 1590 - 1890, 3180 - 3780 MHz • 24-bit step size, resolution 3 Hz typ • Ultra low Phase noise

HMC838LP6C

Abstract: R19-R21 Triband 900 1800
Contextual Info: HMC838LP6CE v05.0612 FRACTIONAL-N PLL WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz Plls w/ integrated vco - SMT Features 1 • Tri-band RF Bandwidth: 795 - 945, 1590 - 1890, 3180 - 3780 MHz • 24-bit Step Size, Resolution 3 Hz typ • Ultra Low Phase Noise

h838

Abstract: HMC838 HMC838LP6CE 1k ohm resistor RESISTOR ARRAY 0402 HMC838LP6C
Contextual Info: HMC838LP6CE v00.0310 FRACTIONAL-N SYNTHESIZER w/ INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz Features • RF Bandwidth: 795 - 945, 1590 - 1890, 3180 - 3780 MHz • 24-bit Step Size, Resolution 3 Hz typ • Fractional or Integer Modes • Cycle Slip Prevention

MRF9045MR1

Abstract: TO270
Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device

MRF181

Abstract: 300 uF 450 VDC Mallory Capacitor MRF181SR1
Contextual Info: MOTOROLA Order this document by MRF181/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF9045M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045M MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device

HMC838LPCE

Contextual Info: HMC838LPCE v03.1211 FRACTIONAL-N PLL WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz Plls w/ integrated vco - SMT Features 0-1 • Tri-band RF Bandwidth: 795 - 945, 1590 - 1890, 3180 - 3780 MHz • 24-bit Step Size, Resolution 3 Hz typ • Ultra Low Phase Noise

TC50025

Abstract: MRF181SR1 motorola 549 diode MRF181ZR1 ARLON-GX-0300-55-22 TC5002 300 uF 450 VDC Mallory Capacitor MRF181
Contextual Info: MOTOROLA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

HMC838LP6C

Contextual Info: HMC838LP6CE v01.0410 FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz Features • RF Bandwidth: 795 - 945, 1590 - 1890, 3180 - 3780 MHz • 24-bit Step Size, Resolution 3 Hz typ • Ultra Low Phase Noise -111 dBc/Hz in Band Typ.

Contextual Info: HMC838LP6CE v04.0412 FRACTIONAL-N PLL WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz Plls w/ integrated vco - SMT Features 1 • Tri-band RF Bandwidth: 795 - 945, 1590 - 1890, 3180 - 3780 MHz • 24-bit Step Size, Resolution 3 Hz typ • Ultra Low Phase Noise

HMC838LP6CE

Abstract: HMC838 h838 SYNTHESIZER FOR phased array HMC860 HMC838LP6C C43-C45 HMC860LP3 12951-1 50MHz VCO schematic
Contextual Info: HMC838LP6CE v02.1010 FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz Features • RF Bandwidth: 795 - 945, 1590 - 1890, 3180 - 3780 MHz • 24-bit Step Size, Resolution 3 Hz typ • Ultra Low Phase Noise -111 dBc/Hz in Band Typ.

mrf9030

Contextual Info: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices