C 9013 TRANSISTOR Search Results

Contextual Info: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total pow er dissipation. PT=625mW High C ollector Current. (Ic= -500m A) C om plem entary to S S 9013 Excellent hpE linearity.

transistor c 9018

Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
Contextual Info: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF

transistor BR 9013

Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

NPN 9013

Abstract: transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

9011 9012 9013 9014 9018

Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
Contextual Info: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER

transistor BR 9013

Abstract: transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor c 9013

Abstract: transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

9013 npn transistor

Abstract: 9012 Unisonic
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1  FEATURES TO-92 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.

transistor BR 9013

Abstract: BR 9013 transistor 9012 data sheet NPN 9013 9013 transistor 9013 npn transistor datasheet transistor 9013 data sheet transistor 9012 transistor c 9013 9013 npn
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

9013 transistor

Abstract: Transistor-9013 h UTC 9013 9013 NPN Transistor
Contextual Info: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER

9013 npn

Abstract: NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES 1 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012

9012 Unisonic

Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER

Transistor-9013 h

Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

9013 sot-23

Abstract: transistor c 9013 9012 transistor 9013 transistor sot-23 9013 NPN Output Transistor Transistor 9013 transistor 9012 9013
Contextual Info: MMBT9013LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9012 Collector Current :Ic=500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW

FS9922-DMM3

Contextual Info: FS9922-DMM3 Data Sheet Integrated Circuits of 4,000 Counts Auto-ranging Digital Multimeter with Bar Graph Rev. 0.5 Dec. 2004 Fortune Semiconductor Corp. FS9922-DMM3-DS-05_EN CR-004 FS9922-DMM3 Taipei Office: 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251,

9012 Unisonic

Abstract: 9012L-
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  1 FEATURES TO-92 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity

Contextual Info: FS9922-DMM3-DS-10_EN Datasheet DEC 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.0 FS9922-DMM3 Fo Integrated Circuits of 4,000 Counts Auto-ranging Digital Multimeter with Bar Graph FS9922-DMM3 Fortune Semiconductor Corporation Fo F P r R ro SC

FS9922-DMM4-DS-11

Abstract: FS9922-DMM4
Contextual Info: REV. 1.1 FS9922-DMM4-DS-11_EN Datasheet FS9922-DMM4 Integrated Circuits of 6,000 Counts Auto-ranging Digital Multimeter with Bar Graph SEP 2006 FS9922-DMM4 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,

diode R31

Abstract: NPN Transistor 10A 24V AD1P
Contextual Info: FS9922-DMM4 Data Sheet Integrated Circuits of 6,000 Counts Auto-ranging Digital Multimeter with Bar Graph Rev. 1.0 Mar. 2005 Fortune Semiconductor Corp. FS9922-DMM4-DS-10_EN CR-004 FS9922-DMM4 Taipei Office： 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251,

transistor c 9012

Abstract: PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor c 9012

Abstract: PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor c 9012

Abstract: PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor c 9012

Abstract: PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

9013 smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION