C 550 TRANSISTOR Search Results

MSP55

Contextual Info: MSP55 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550ã V(BR)CBO (V)550 I(C) Max. (A)350m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: DT600-550 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550º V(BR)CBO (V) I(C) Max. (A)750 Absolute Max. Power Diss. (W)3.0k Maximum Operating Temp (øC)140õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MSP55A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550ã V(BR)CBO (V)550 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)4.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 77-C hannel 550 M Hz CATV Input/O utput Trunk A m p lifier MHW6172 . . . designed specifically for 550 MHz CATV applications. Features ion-implanted arsenic emitter transistors with 7 GHz f j and an all gold metallization

MPS-A65

Contextual Info: Miniature Transistors TYPE POLA­ CASE NO. RITY H FE MAXIMUM RATINGS Pd It ^C E O mW (mA) (V) min max Ic ^C E (mA) (V) BC146 BC146R BC146Y BC146G N N N N MT-42 MT-42 MT-42 MT-42 50 50 50 50 50 50 50 50 20 20 20 20 80 80 140 280 550 200 350 550 0.2 0.2 0.2

bc556

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC556, VCEo= -65V . LOW NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base C apacitance

6342T

Contextual Info: MOTOROLA Order this document by MHW6342T/D SEMICONDUCTOR TECHNICAL DATA The RF Line M HW 6342T 7 7 -C h a n n e l 5 5 0 M H z CATV A m p lifie r 34 dB GAIN 550 MHz 77-CHANNEL CATV AMPLIFIER Designed specifically for 550 MHz CATV applications. Features io n -im planted arsenic emitter transistors with 7 GHz f j and an all gold metallization

transistor B 560

Abstract: BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC556, V CEo = -65V • LO W NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase C apacitance

transistor C 548 B

Abstract: transistor c 548 BC547 bc548 transistor 547 TRANSISTOR bc546 fairchild transistor b 548 transistor bc547 transistor 547 b C 548 B
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC546, VCeo=65V • LO W NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC546, VCeo= 65V . LOW NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage

BC549 NPN transistor

Abstract: BC550 BC549 Amplifier with transistor bc549 transistor bc549 transistor bc550 bc550 noise figure
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC549/550 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC BC549 BC550 C o l l e c t o r - E m i t t e r BC549 Voltage BC550 Emitter-Base Voltage

BC559

Abstract: TRANSISTOR bc560 BC560 bc560 c
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC559/560 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE • For Complementary With NPN Type BC549/550. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC BC559 Collector-Base Voltage BC560 C ollector-Em itter BC559 Voltage

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC556, VCEo= -65V • LOW NOISE: BC559, BC560 • Complement to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic Sym bol Collector-Base Capacitance

TRANSISTOR C 557 B

Abstract: BC 558 transistor transistor c 557 transistor B 560 transistor 557 b transistor bc 557 c le B 557 PNP TRANSISTOR transistor 200ma pnp bc transistor c 558 BC559
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC556, V Ce o = - 6 5 • LOW NOISE: 8C 559, BCS60 • Com plem ent to BC546 . BC 550 V ABSOLUTE MAXIMUM RATINGS Ta=25°C C hara c te ristic Sym bol C ollector Base Capacitance

MD-60

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 77-C hannel 550 MHz CATV A m plifier M HW 6342 . . . designed specifically for 5 5 0 M H z C A TV applications. Features ion-im planted arsenic emitter transistors with 7 G H z fT and an all gold metallization system.

Contextual Info: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE B C A ᴌFor Complementary with PNP Type BC559/560. N MAXIMUM RATING Ta=25ᴱ 30 VCBO BC550 BC549 Collector-Emitter Voltage 50 30 VCEO 45 UNIT

Contextual Info: MJ300A2F55 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)550ö V(BR)CBO (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)1400 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.80 @I(C) (A) (Test Condition)300

transistor c 548

Abstract: transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LT A G E : BC546, V CEo=65V • L O W NOISE: BC549, B C5S0 • Complement to BC556 . B C 560 ABSOLUTE MAXIMUM RATINGS <TA=25t C h aracte ristic Sym b o l Collector Base Voltage

cc100r600

Contextual Info: CC100R600K Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)550 V(BR)CBO (V)600 I(C) Max. (A)100 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)150 h(FE) Min. Current gain.40 @I(C) (A) (Test Condition)100

Contextual Info: KD225575 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)550ö V(BR)CBO (V)600 I(C) Max. (A)75 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.75 @I(C) (A) (Test Condition)75

Amplifier with transistor bc549

Abstract: BC550 BC549 BC549 NPN transistor BC549 DATASHEET bc549 equivalent transistor bc550 bc549 noise figure LBC550 BC549 NPN transistor download datasheet
Contextual Info: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE B C A For Complementary with PNP Type BC559/560. N E K MAXIMUM RATING Ta=25 G J D SYMBOL 30 VCBO Collector-Base Voltage BC550 BC549 V 50 VEBO

BC560

Abstract: bc559 TRANSISTOR bc560 transistor BC559
Contextual Info: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. B FEATURE C A ・For Complementary with NPN Type BC549/550. N E K G MAXIMUM RATING Ta=25℃ SYMBOL RATING UNIT -30 BC559 VCBO Collector-Base Voltage V BC560 -50

BC560

Abstract: BC559 pnp bc559 transistor TRANSISTOR bc560 transistor bc549
Contextual Info: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE B C A ᴌFor Complementary with NPN Type BC549/550. N MAXIMUM RATING Ta=25ᴱ -30 VCBO BC560 BC559 Collector-Emitter Voltage -50 -30 VCEO -45 UNIT V H V

Contextual Info: 2SC4517 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550 V(BR)CBO (V)900 I(C) Max. (A)3 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)800 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)1