C 2640 RF TRANSISTOR Search Results

Contextual Info: Preliminary Specifications Surface Mount Voltage Controlled Oscillator ISM 2590 - 2640 MHz MLO80100-02615 V1.00 ● ● ● DETAIL A 5.71 Orientation Mark 4.41 1 RF VCC VT 2 3 5.18 ● LCC1 Package Dimensions Miniature Size Surface Mount Package Electrically Shielded

k 2645 MOSFET

Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

k 2645 MOSFET

Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

capacitor 1825

Abstract: Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600

K 2645 schematic

Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600

K 2645 schematic circuit

Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to

k 2645 MOSFET

Abstract: K 2645 schematic circuit
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MOSFET marking Z4

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: MRF5P21240 Rev. 2, 12/2004 Freescale Semiconductor Technical Data MRF5P21240R6 replaced by MRF5P21240HR6. “H” suffix indicates lower thermal resistance package. RF Power Field Effect Transistor MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110

Contextual Info: MRF5P21240 Rev. 2, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

transistor z9

Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
Contextual Info: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package

250GX-0300-55-22

Abstract: j6808 GRM32RR71H105KA01B 2508051107Y0 F 5M 365 R T491D106K050at A114 A115 AN1955 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to

J2190

Abstract: 2595MHz j2593
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 0, 8/2006 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to

J2190

Abstract: A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22 MRF6S27015GNR1 MRF6S27015NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 1, 6/2007 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to

2Sc2622

Abstract: 2SA1126H 2SA1126 K 2645 transistor 175MHZ 337C transistor k 2627 transistor k 2628 175il
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

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l35 CAPacitor

Abstract: 1800 ldmos marking l33 BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor ATC Semiconductor Devices
Contextual Info: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features

4ka0

Abstract: BUF601
Contextual Info: HA RR IS S E M I C O N D S E CT OR • 43 GS 27 1 OQHbflOb H T HFA1110 H A R R IS SEMICONDUCTOR 750MHz Low Distortion Unity Gain, Closed Loop Buffer March 1993 Features Description • W ide-3dB Bandwidth. 750MHz The HFA1110 is a unity gain closed loop buffer that achieves

RF2373

Contextual Info: RF5163 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER Typical Applications • 802.11b/g/n Access Points • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery-Powered Equipment • 2.4GHz ISM Band Applications • Broadband Spread-Spectrum Systems

200B

Abstract: BCP56 LM7805 PTFA260851E PTFA260851F
Contextual Info: PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to