C 25N Search Results

Contextual Info: TT m \ lE MICROELECTRONICS 256Kx16 SRAM p r e lim in a r y WPS256K16-XLJX * PLASTIC PLUS FEATURES • A c c e s s T im es of 17 C om m ercial Only , 20, 25ns PIN C O N F IG U R A T IO N T O P VIEW C 1 C 2 A2 C 3 A3 C 4 A4 C 5 CS C 6 1/01 C 7 I/02 C 8 AO

Contextual Info: TT WHITE /MICROELECTRONICS 512Kx8 SRAM WPS512K8X-XRJX p r e l im in a r y * PLASTIC PLUS FEATURES • A cce ss Tim es o f 15, 20, 25ns PIN CONFIGURATION TOP VIEW C 1 C 2 A2 C 3 A3 C 4 A4 C 5 cs C 6 l/OO C 7 1/01 C 8 AO o A1 ^ 36 □ 32 □ A15 01 30 □

256kx16sram

Contextual Info: \ 'A WHITE MICROELECTRONICS 256Kx16SRAM p r e lim in a r y WPS256K16-XUX * PLASTIC PLUS FEATURES • A c c e ss T im e s of 1 5 ,1 7 , 20, 25ns PIN CONFIGURATION TOP VIEW AO C 1 A1 C 2 A2 C 3 44 H A17 43 H A16 42 □ A15 A3 C 4 A4 C 5 CS C 6 41 H Ô Ë

Contextual Info: TT WHITE /MICROELECTRONICS 512Kx8 SRAM WPS512K8-XRJX p r e l im in a r y * PLASTIC PLUS FEATURES • A cce ss Tim e s o f 15, 20, 25ns PIN CONFIGURATION TOP VIEW C 1 C 2 A2 C 3 A3 C 4 A4 C 5 cs C 6 l/OO C 7 1/01 C 8 AO o A1 ^ 36 □ 32 □ A15 01 30 □

Contextual Info: 4 IM ITE M IC R O ELEC TR O N IC S 256Kx16 SR A M p r e l im in a r y WPS256K16-XLJX * PLASTIC PLUS FEATURES • Access Tim es of 17 C om m ercial O nly , 2 0 , 25nS PIN CONFIGURATION TOP VIEW AO C A1 L2 C A3 C A4 C CS C 1/01 C A2 1 Il 44 A17 43 □ A16

White Microelectronics

Contextual Info: TT WHITE /MICROELECTRONICS 512Kx8 SRAM WPS512K8X-XRJX p r e l im in a r y * PLASTIC PLUS FEATURES • A c ce ss Tim e s of 15, 20, 25ns PIN CONFIGURATION TOP VIEW AO C 1 o A1 C 2 A2 C 3 ^ 35 □ A18 A3 C 4 A4 □ 5 32 □ A15 cs C 6 l/OO C 7 31 □ 01 30 □ 1/07

2SN100

Abstract: 25N100
Contextual Info: IGBT IXGH 25N100 IXGH 25N100A L O W V CE S* High speed Maximum Ratings Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V T,J = 25° C to 150° C; FLr bt: = 1 M ft 1000 V v* GES Continuous +20 V VGEM Transient ±30 V ^C25 Tc =25°C 50 A ^C90 T c = 90° C

72-XM

Abstract: 7270m
Contextual Info: WHITE /MICROELECTRONICS W PD 8M 72-XM D C 8Mx72 DRAM DIM M FEATURES GENERAL DESCRIPTION Perform ance range: ^RAC ^C A C ^RC ^H P C W PD8M 72-60M DC 60ns 20ns 110ns 30ns W PD8M 72-70M DC 70ns 25ns 130ns 33ns The W P D8M 72-XM D C is a 8M x 72 bit Dynamic RAM high

IC 4025

Abstract: cmos 4000 4001 4002 cmos ic 4001 dc 4025 IC CMOS 4001 cmos nor cmos 4000 series CMOS 4002 4002 ic
Contextual Info: signotiEs 4000 4001 4002 4025 C-MOS NOR GATES C-MOS 4000 SERIES AD VA N C ED INFORM ATION DESC RIPTIO N PIN C O N F IG U R A T IO N S These Signetics Series 4000 C-MOS devices are positive logic NOR gates. Operating voltage range is +3V to +15V. Switching speeds are typically 25ns. Quiescent power dissi­

Contextual Info: a WS512K8-XCX WHITE /MICROELECTRONICS 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 • A c c e ss T im e s 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A18 C A16 C A14 C A12 C A7 H A6 C A5 C A4 C A3 C A2 C A1 C AOC i/ooC 1/01 C I/02 □ GNDC 1 2 3 4 5

Contextual Info: 4 THIS DRAWI NG S 3 IS UNPUBLISHED. C O P Y R 1GHT 20 RE L E A S E D BY TYCO E L E C T R O N I C S FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS 2 20 LOC R E SE RV ED. REVISIONS D 1ST CC 00 P LTR D E S C R 1P T 1ON DATE RELEASED A DWN KT 25NOV08 A PV D

Contextual Info: aixYS Advanced Technical Information HiPerFET Power MOSFETs p bss DS on K IXFK/IXFX 26N90 900 V 26 A 0.30 Q. 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Q. 250 ns V DSS • Single MOSFET Die Maximum Ratings Symbol Test Conditions V Tj = 25° C to 150° C Tj = 25° C to 150° C; RGS= 1 M il

Contextual Info: 5 1 2 K x 8 S R A M p r e lim in a r y * PLASTIC PLUS FEATURES FIG. 1 • Access Tim es of 15, 20, 25nS PIN CONFIGURATION TOP VIEW AOC 1 0 ^ A 1C 2 A 2C 3 A3C 4 A4 |Z 5 esc 6 l/oo C 7 i/oi c 8 Vcc Z 9 Vss (Z 10 I/0 2 C 11 I /0 3 C 12 WE C 13 A S H 14 A61 15

16A06

Contextual Info: WS32K32-XHX WHITE / M I C R O E L E C T R O N I C S • C o m m e rcia l, In d u s tria l and M ilita r y T e m p e ra tu re Ranges ■ TTL C o m p a tib le In p u ts and O u tp u ts FEATURES ■ 5 V o lt P o w e r S u p ply ■ A cce ss T im e s o f 25nS to 120nS

Contextual Info: M/HITE /MICROELECTRONICS WPD32M72V-XMDC 32Mx72 DRAM 3.3V DIM M MODULE GENERAL DESCRIPTION FEATURES • Perform ance range: ^RAC ^C A C ^RC ^P C W PD32M 72V-60M DC 60ns 20ns 110ns 40ns W PD32M 72V-70M DC 70ns 25ns 130ns 45ns • Fast Page Mode operation •

Contextual Info: M/HITE /MICROELECTRONICS WPDE8M72V-XMDC 8Mx72 EDO DRAM 3.3V DIMM MODULE FEATURES • GENERAL DESCRIPTION Perform ance range: ^R A C ^CAC ^R C ^H P C WPDE8M72V-60M DC 60ns 20ns 110ns 30ns WPDE8M72V-70M DC 70ns 25ns 130ns 33ns • Fast Page with EDO Mode operation

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT RELEASED FOR PUBLICATION 6 5 4 3 2 2006 LOC 2006 REVISIONS DIST ES ALL RIGHTS RESERVED. 1 00 P LTR DESCRIPTION C REVISED PER ECR-07-018402 C1 -C- F 4.1 ( 26.25 ) ( 22.55 ) SY REVISED PER ECO-10-023688 25NOV2010

Contextual Info: T T WSF512K32V-29G2TX M/HITE /MICROELECTRONICS 512Kx32 SRAM/FLASH 3.3V MODULE PRELIMINARY* FEATURES FLASH MEMORY FEATURES • A c c e s s Tim e s o f 25ns SRA M and 90ns (FLASH ) ■ 10,000 Erase/Program C ycles ■ Packagin g ■ Se cto r A rchitecture

Contextual Info: 7 THIS DRAWING AND DESIGN HEREON CON­ S T I T U T E S A PR O PR IETAR Y DESIGN OF PACKARD E L E C T R I C DIVISION AND IS NOT TO BE D U PLIC A TED OR REPRODUCED WITH­ OUT AUTHORITY QF PACKARD E L E C T R I C DIVISION. DATE 00 00 LD LD o DO NOT SCALE H 25N091

Contextual Info: L i i i u \ k T E C H N O L O G Y _ L T 1 0 1 1 / L T 1 0 1 1A V o lt a g e C o m p a ra to r FCRTURCS D C S C R IP T IO n • Pin Compatible with LM111 Series Devices ■ Guaranteed Max 0.5mV Input Offset Voltage ■ Guaranteed Max 25nA Input Bias Current

Contextual Info: LOW POWER 3.3V CMOS FAST SRAM 256K 32K x 8-BIT PRELIMINARY IDT71V256SA In te g ra te d D evice T echnology, Inc. FEATURES DESCRIPTION • Ideal fo r h ig h -p e rfo rm a n c e p ro c e s s o r s e c o n d a ry cach e • Fast ac c e s s tim es: — 2 0 /25n s

HA 13645

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 P Y p p r c c SEMICONDUCTOR 2048 x 8 Dual-Port Static RAM Features Functional Description • 0 .8-micron CMOS for optimum speed/ power T h e C Y 7 C 1 3 2 /C Y 7 C 1 3 6 /C Y 7 C 142/ C Y 7 C 1 4 6 a rc h ig h -sp ee d C M O S 2K b y 8

CI 4001

Abstract: cmos ic 4001 cmos 4000 series cmos 4001 4001 CMOS NOR GATE 4001 nor gate pin configuration 4001 S4025 cmos logic 4001 series 4000 3 input nor
Contextual Info: signotics 4000 4001 4002 4025 C-MOS NOR GATES C-MOS 4000 SERIES AD VA N C ED INFORM ATION PIN CO N FIG U R A TIO N S DESCRIPTION These Signetics Series 4 0 0 0 C M O S devices are positive logic N O R gates. O perating voltage range is + 3V to +15V. S w itching speeds are ty p ic a lly 25ns. Quiescent pow er dissi­

B057r

Abstract: cv7c130 CY7C130 CY7C131 CY7C140 CY7C141 Zl13
Contextual Info: CYPRESS SEMI CONDUCTOR 4bE D • 2 5 0 ^ 2 ''-T ^ C r L V O * ODDbBMO 1 E S C Y P C Y 7 C 1 3 0 /C Y 7 C 1 3 1 C Y 7 C 1 4 0 /C Y 7 C 1 4 1 CYPRESS SEMICONDUCTOR 1024 x 8 Dual-Port Static RAM Features Functional Description • 0,8-micron CMOS for optimum