C 251 C Search Results

Contextual Info: 6,1 P C -Board layout view component side thickne ss 1,6 mm 2,9 Connection retention and insertion fo rce s on the PCB = 25 / 80 N 09 66 251 3533 M3 1 09 66 251 6533 M3 2 09 66 251 7533 M3 3 09 66 251 3513 4 -4 0 UNC 1 09 66 251 6513 4 -4 0 UNC 2 09 66 251 7513

c2611 transistor

Abstract: transistor C2611 transistor npn Pcm 1W C2611 200YA
Contextual Info: TO-251 Plastic-Encapsulate Transistors C2611 TRANSISTOR NPN FEATURES .• > : L ^ rer d is s ip a t io n ''• ¿ Ì ì W / Ì Ì Ì m Ì . ^ S ~ '/ V ^ v i - • & ’ TO-251 P cm: ^ ' 1—ÎÎ if •- » - > 'ÿ - 1W (Tamb=25°C) C o lle c t o r c u rr e n t

KPE-251

Abstract: KPE-253 KPEG251 KPEG
Contextual Info: PIEZO INDICATOR Internal C ir lu t r J Type Shape KPE-251 KPE-253 R o H S Compliant AvalaW c eg KPEG 251 .KPEG253 M o d e l N um b er K P E -2 5 1 Rated Frequency (Hz) K P E -2 5 3 3.500 1 500 Operating Voltage Range (VDC) 4-28 Current Consumption (mA> Max 5@ 12VD C

Contextual Info: SbE » • 7^2*1237 GDMD0Ö3 131 M S G T H Æ 7 S G S -T H O M S O N Ä 7# RiflDMlltLiOTOIiMDeg T~ 2^ / M 54H C 251 M 74H C 251 S G S-TH0nS0N 8-CHANNEL MULTIPLEXER 3-STATE ■ HIGH SPEED tPD = 18 ns (TYP.) at V c c = 5V ■ LOW POWER DISSIPATION ICC = 4 pA (MAX.) at Ta = 25°C 6V

TO-251

Abstract: TO-251 weight TO-251 fairchild TO-251 Package
Contextual Info: TO-251 Package Dimensions TO-251 FS PKG Code 39 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.44 A 6.80 6.35 5.54 5.14 2.50 2.10 1.27 0.50 1.52 0.70 1 C 2 0.60 0.40 6.30 5.90 2.28 1.60 3 1.14

1ld2

Abstract: e527 IL0251
Contextual Info: SIEMENS CriPNTSi OPTO SIEM EN S 44E D m 023b35b 000501=1 7 Q S I E X IL250/251/252 ILD250/251/252 SINGLE CHANNEL DUAL CHANNEL BIDIRECTIONAL INPUT OPTOCOUPLERS FEATURES • A C o r Po la rity In s e n sitiv e In p u ts • S e le c te d C u rren t T r a n s fe r R a tio s

Contextual Info: 120 Amp Schottky OR’ing Rectifier HS1 251 0 —HS1 251 5 Dim. Inches A B C D E F G H J K L M illim eter Minimum Maximum Minimum 1.52 .725 .605 1.182 .745 .152 38.61 1.56 18.42 .775 15.37 .625 30.02 1.192 18.92 .755 3.86 .160 1 /4 -2 0 UNC-2B 13.84 .555 3.96

Contextual Info: SSM20G45EH,J N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR G High input impedance High peak current capability 4.5V gate drive Strobe flash applications C E V CES 450V ICP 130A TO-252 H C G G C E TO-251 (J) E Absolute Maximum Ratings Symbol Parameter Rating

RUR660

Abstract: RUR640 RURD640 RURD640S RURD650 RURD650S RURD660 RURD660S RUR650
Contextual Info: S E M I C O N D U C T O R RURD640, RURD650, RURD660, RURD640S, RURD650S, RURD660S 6A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC STYLE TO-251 • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175oC

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA733 LOW FREQUENCY AMPLIFIER • Collector-Base Voltage VCBO= -60V • Complement to KSC945 ABSOLUTE MAXIMUM RATINGS TA =251! C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

IOR 5B2 2H

Abstract: 945 MOTHERBOARD CIRCUIT diagram DSI ECC WC SoT EoT IOR 5B2 3H marking B5T PC intel 945 MOTHERBOARD CIRCUIT diagram 16C550 82077AA FDC37C651 FDC37C661
Contextual Info: STANDARD MICROSYSTEMS CORPORATION, FD C 37C 665G T FD C 37C 666G T PRELIMINARY so Arkay Drive. Hauppauoe, NY 11788 516 455*6000 Fax (516) 251-6004 Advanced High-Performance Multi-Mode Parallel Port Super I/O Floppy Disk Controllers FEATURES • • •

UART Program Examples TI

Abstract: MCB251 ecall C251
Contextual Info: C COMPILERS • REAL-TIME OS • SIMULATORS • EDUCATION • EVALUATION BOARDS 16990 Dallas Parkway • Suite 120 • Dallas, Texas • 75248 • 800-348-8051 Optimum Code Generation for 251 Microcontroller Applications with more than 64Kbytes code size.

Contextual Info: WTP772 WTP882 PNP/NPN Epitaxial Planar Transistors TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC)

SZD772

Contextual Info: SZD772 PNP Epitaxial Planar Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free TO-251 DESCRIPTION The SZD772 is signed for using in output stage of 10W amplifier, voltage regulator, DC-DC converter and relay driver.

GFU30N03

Contextual Info: GFU30N03 N-Channel Enhancement-Mode MOSFET H C N TRENFET E TO-251 IPAK VDS 30V RDS(ON) 15mΩ ID 43A D TM G 0.265 (6.73) 0.255 (6.48) 0.094 (2.39) 0.087 (2.21) 0.214 (5.43) 0.206 (5.23) t c u rod P New S 0.023 (0.58) 0.018 (0.46) D 0.050 (1.27) 0.035 (0.89)

GFU25N03

Contextual Info: GFU25N03 N-Channel Enhancement-Mode MOSFET H C N TRENFET E TO-251 IPAK VDS 30V RDS(ON) 16.5mΩ ID 38A D TM G 0.265 (6.73) 0.255 (6.48) 0.094 (2.39) 0.087 (2.21) 0.214 (5.43) 0.206 (5.23) t c u rod P New S 0.023 (0.58) 0.018 (0.46) D 0.050 (1.27) 0.035 (0.89)

2SB772L

Abstract: 702 pnp
Contextual Info: 2SB772L PNP Type Elektronische Bauelemente Epitaxial Transistors RoHS Compliant Product TO-251 A suffix of "-C" specifies halogen & lead-free Description 2.3±0.1 6.6±0.2 5.3±0.2 The 2SB772L os designed for using in output stage of 10W amplifier, voltage regulator, DC-DC converter and

MJP122

Abstract: TO-251 Outline TIP122
Contextual Info: MJP122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: TO-251 * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Value

ic 780

Abstract: GI882
Contextual Info: ISSUED DATE :2002/12/13 REVISED DATE :2005/08/10B GI882 NPN EPITAXIAL PLANAR T RANSISTOR Description The GI882 is designed for using in output stage of 20W amplifier, voltage regulator, DC-DC converter and relay driver. Package Dimensions TO-251 REF. A B C

Contextual Info: MJP122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C TO-251 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Value

Contextual Info: SNS4HC2S1, SN74HC2S1 DATA SELECTORS/MULTIPLEXERS WITH 3-STATE OUTPUTS D2084, DE C EM B ER 1 9 8 2 -B E V J S E D SEPTEM B ER 1987 3-State Version of ’HC151 SN S4 H C 2 6 1 . . . J PACKAG E SN 74H C 251 . . . D O R N PACKAG E High-Current 3-State Outputs Interface

GI31C

Abstract: GI32C
Contextual Info: ISSUED DATE :2005/05/12 REVISED DATE : GI31C NP N EP ITAXI AL PL ANAR T RANSI STOR Description The GI31C is designed for use in general purpose amplifier and switching applications. Features *Complementary to GI32C Package Dimensions TO-251 REF. A B C D E

GI31C

Abstract: GI32C
Contextual Info: ISSUED DATE :2005/05/12 REVISED DATE : GI32C P NP EP ITAXI AL PL ANAR T RANSI STOR Description The GI32C is designed for use in general purpose amplifier and switching applications. Features *Complementary to GI31C Package Dimensions TO-251 REF. A B C D E

GI41C

Abstract: GI42C
Contextual Info: ISSUED DATE :2005/05/12 REVISED DATE : GI42C P NP EP ITAXI AL PL ANAR T RANSI STOR Description The GI42C is designed for use in general purpose amplifier and switching applications. Features *Complementary to GI41C Package Dimensions TO-251 REF. A B C D E