C 251 C Search Results

Contextual Info: 6,1 P C -Board layout view component side thickne ss 1,6 mm 2,9 Connection retention and insertion fo rce s on the PCB = 25 / 80 N 09 66 251 3533 M3 1 09 66 251 6533 M3 2 09 66 251 7533 M3 3 09 66 251 3513 4 -4 0 UNC 1 09 66 251 6513 4 -4 0 UNC 2 09 66 251 7513

273102

Abstract: "8x930Hx"
Contextual Info: C Program Library for PLC Compass/251 C program library For Production Language Corporation’s PLC Compass/251 USB software Author: Walter Banks, Jr. Tuesday, December 16, 1997 C Program Library for PLC Compass/251 Information in this document is provided in connection with Intel products. No license, express or

intel chips 8x930

Abstract: C-CAP "8x930Hx"
Contextual Info: C Program Library for TASKING Inc. MCS 251 8x930 USB C program library ® For TASKING Inc. MCS 251 8x930 USB software Author: Walter Banks, Jr. Friday, January 20, 1998 01/20/98 Page 1 of 33 ® C Program Library for TASKING Inc. MCS 251 8x930 USB Information in this document is provided in connection with Intel products. No license, express or

2CDS 251 001

Abstract: R0204 2CDS 251 R0404 R0064 R0104 R0164 204C 46470 46840
Contextual Info: System pro M compact Miniature circuit-breakers S 200 series S 200-C Selection table C 6000 No. of poles rated current In A order details type code order code bbn 40 16779 EAN 1 0.5 1 1.6 S 201-C 0.5 S 201-C 1 S 201-C 1.6 2CDS 251 001 R0984 2CDS 251 001 R0014

Contextual Info: - 7 ^ / ' c 2 3 D 251 NR 53E D EUPEC • 3m]32i7 aaocnio to? ■ upec D 251 NR Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Periodische Vrrm Spitzensperrspannung Effektiver Ifrmsm Durchlaßstrom Dauergrenzstrom •favm Maximum permissible values

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 MJD122 Plastic-Encapsulate Transistors TRANSISTOR（NPN） TO-251 FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR 3.EMITTER

SW-251

Contextual Info: MATCHED GaAs SP3T SWITCH MODELS SW-247/251 5-2000 MHz Low Insertion Loss, 1.0 dB Typical Fast Switching Speed, 20 ns Typical Ultra Low DC Power Consumption, 0.22mA Typical Integral TTL SW-247 or CMOS (SW-251) Driver Guaranteed Specifications* (F ro m - 5 5 ° C t o + 8 5 ° C )

TRANSISTOR tip122

Abstract: MJD122 TIP122 TO252-2
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2 TRANSISTOR NPN FEATURES 1. BASE • · · High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD122 TRANSISTOR（NPN） TO-251-3L FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR

K0310

Abstract: 025Z
Contextual Info: SIEMENS IL250/251/252 ILD250/251/252 SINGLE CHANNEL DUAL CHANNEL BIDIRECTIONAL INPUT OPTOCOUPLER F EA T U R E S • Selected C urrent Transfer Ratios 20%, 50%, 100% Minimum • AC o r Polarity Insensitive Input • B uilt-in Reverse Polarity Input Protection

mjd127

Abstract: TIP127
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD127 TRANSISTOR PNP FEATURES • · · 1. BASE High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2L TRANSISTOR（NPN） FEATURES 1.BASE ∙ High DC current gain ∙ Electrically similar to popular TIP122 ∙ Built-in a damper diode at E-C

SID15N10

Abstract: MosFET 15N10
Contextual Info: SID15N10 15A, 100V, RDS ON 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-251 DESCRIPTION The SID15N10 provide the designer with the best combination of fast switching. The TO-251 package is

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD127 TRANSISTOR NPN FEATURES • · · 1. BASE High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C 2. COLLECTOR

SID05N10

Abstract: MosFET 05n10
Contextual Info: SID05N10 5A , 100V , RDS ON 170 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free TO-251 DESCRIPTION The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is

c2611 transistor

Abstract: transistor C2611 transistor npn Pcm 1W C2611 200YA
Contextual Info: TO-251 Plastic-Encapsulate Transistors C2611 TRANSISTOR NPN FEATURES .• > : L ^ rer d is s ip a t io n ''• ¿ Ì ì W / Ì Ì Ì m Ì . ^ S ~ '/ V ^ v i - • & ’ TO-251 P cm: ^ ' 1—ÎÎ if •- » - > 'ÿ - 1W (Tamb=25°C) C o lle c t o r c u rr e n t

KPE-251

Abstract: KPE-253 KPEG251 KPEG
Contextual Info: PIEZO INDICATOR Internal C ir lu t r J Type Shape KPE-251 KPE-253 R o H S Compliant AvalaW c eg KPEG 251 .KPEG253 M o d e l N um b er K P E -2 5 1 Rated Frequency (Hz) K P E -2 5 3 3.500 1 500 Operating Voltage Range (VDC) 4-28 Current Consumption (mA> Max 5@ 12VD C

Contextual Info: SbE » • 7^2*1237 GDMD0Ö3 131 M S G T H Æ 7 S G S -T H O M S O N Ä 7# RiflDMlltLiOTOIiMDeg T~ 2^ / M 54H C 251 M 74H C 251 S G S-TH0nS0N 8-CHANNEL MULTIPLEXER 3-STATE ■ HIGH SPEED tPD = 18 ns (TYP.) at V c c = 5V ■ LOW POWER DISSIPATION ICC = 4 pA (MAX.) at Ta = 25°C 6V

Contextual Info: H ig h - S p e e d 51 C M O S r 8 S I ^ f c t is it QS54/74FCT251T In p u t QS54/74FCT2151T Q u a l it y M llltip lB X B T S S e m ic o n d u c to r , In c. FEATURES/BENEFITS DESCRIPTION • Pin and function compatible to the 74F151/251 74FCT151/251 and 74FCT151T/251T

TO-251

Abstract: TO-251 weight TO-251 fairchild TO-251 Package
Contextual Info: TO-251 Package Dimensions TO-251 FS PKG Code 39 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.44 A 6.80 6.35 5.54 5.14 2.50 2.10 1.27 0.50 1.52 0.70 1 C 2 0.60 0.40 6.30 5.90 2.28 1.60 3 1.14

n 251 z

Contextual Info: AßfeCGrA Matched GaAs SP3T Switch 5-2000 MHz SW-247/251 FP-17 • Low Insertion Loss, 1.0 dB Typical ■ Fast Switching Speed, 20 ns Typical ■ Ultra Low DC Power Consumption, 0.22m A Typical ■ Integral TTL SW -247 or C M O S (SW-251) Driver 0.150 7 EQUAL SPACES I

1ld2

Abstract: e527 IL0251
Contextual Info: SIEMENS CriPNTSi OPTO SIEM EN S 44E D m 023b35b 000501=1 7 Q S I E X IL250/251/252 ILD250/251/252 SINGLE CHANNEL DUAL CHANNEL BIDIRECTIONAL INPUT OPTOCOUPLERS FEATURES • A C o r Po la rity In s e n sitiv e In p u ts • S e le c te d C u rren t T r a n s fe r R a tio s

Contextual Info: 120 Amp Schottky OR’ing Rectifier HS1 251 0 —HS1 251 5 Dim. Inches A B C D E F G H J K L M illim eter Minimum Maximum Minimum 1.52 .725 .605 1.182 .745 .152 38.61 1.56 18.42 .775 15.37 .625 30.02 1.192 18.92 .755 3.86 .160 1 /4 -2 0 UNC-2B 13.84 .555 3.96

125NQ015

Abstract: HS12510 HS12515 9500P
Contextual Info: 120 Amp Schottky OR'ing Rectifier HS1 251 0 —HS1 251 5 Dim. Inches A B C D E F G H J K L M illim eter Minimum Maximum Minimum 1.52 .725 .605 1.182 .745 .152 38.61 1.56 18.42 .775 15.37 .625 30.02 1.192 18.92 .755 3.86 .160 1 /4 -2 0 UNC-2B 13.84 .555 3.96