C 251 C Search Results
C 251 C Price and Stock
Rochester Electronics LLC TLC251CPSRIC OPAMP GP 1 CIRCUIT 8SO |
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TLC251CPSR | Bulk | 19,600 | 167 |
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Rochester Electronics LLC TLC251CPTLC251 LINCMOS PROGRAMMABLE LOW- |
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TLC251CP | Bulk | 18,552 | 89 |
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Rochester Electronics LLC TLC251CPWIC CMOS 1 CIRCUIT 8TSSOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TLC251CPW | Bulk | 6,150 | 167 |
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Rochester Electronics LLC TLC251CDG4IC OPAMP GP 1 CIRCUIT 8SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TLC251CDG4 | Bulk | 231 | 89 |
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Texas Instruments TLC251CPSRG4IC OPAMP GP 1 CIRCUIT 8SO |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TLC251CPSRG4 | Tape & Reel | 2,000 |
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TLC251CPSRG4 | 7,885 |
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C 251 C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 6,1 P C -Board layout view component side thickne ss 1,6 mm 2,9 Connection retention and insertion fo rce s on the PCB = 25 / 80 N 09 66 251 3533 M3 1 09 66 251 6533 M3 2 09 66 251 7533 M3 3 09 66 251 3513 4 -4 0 UNC 1 09 66 251 6513 4 -4 0 UNC 2 09 66 251 7513 |
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D-32339 15-poles 0966251X5X3 100566511/UG D/001/A | |
273102
Abstract: "8x930Hx"
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Compass/251 Compass/251 8x930hx 273102 "8x930Hx" | |
intel chips 8x930
Abstract: C-CAP "8x930Hx"
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8x930 Reg930hx intel chips 8x930 C-CAP "8x930Hx" | |
2CDS 251 001
Abstract: R0204 2CDS 251 R0404 R0064 R0104 R0164 204C 46470 46840
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200-C 201-C R0984 R0014 R0974 2CDS 251 001 R0204 2CDS 251 R0404 R0064 R0104 R0164 204C 46470 46840 | |
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Contextual Info: - 7 ^ / ' c 2 3 D 251 NR 53E D EUPEC • 3m]32i7 aaocnio to? ■ upec D 251 NR Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Periodische Vrrm Spitzensperrspannung Effektiver Ifrmsm Durchlaßstrom Dauergrenzstrom •favm Maximum permissible values |
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D448N. T-91-20 D1509N. | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 MJD122 Plastic-Encapsulate Transistors TRANSISTOR(NPN) TO-251 FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR 3.EMITTER |
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O-251 MJD122 TIP122 | |
SW-251Contextual Info: MATCHED GaAs SP3T SWITCH MODELS SW-247/251 5-2000 MHz Low Insertion Loss, 1.0 dB Typical Fast Switching Speed, 20 ns Typical Ultra Low DC Power Consumption, 0.22mA Typical Integral TTL SW-247 or CMOS (SW-251) Driver Guaranteed Specifications* (F ro m - 5 5 ° C t o + 8 5 ° C ) |
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SW-247/251 SW-247) SW-251) SW-247 SW-251 SW-251 | |
TRANSISTOR tip122
Abstract: MJD122 TIP122 TO252-2
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O-251/TO-252-2 MJD122 O-251 O-252-2 TIP122 TRANSISTOR tip122 MJD122 TIP122 TO252-2 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD122 TRANSISTOR(NPN) TO-251-3L FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR |
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O-251-3L MJD122 O-251-3L TIP122 | |
K0310
Abstract: 025Z
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ES2744 Add-X001 IL/D250/251/252 K0310 025Z | |
mjd127
Abstract: TIP127
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O-251/TO-252-2Plastic-Encapsulate O-251 O-252-2 MJD127 TIP127 -100V -16mA -80mA Width380 mjd127 TIP127 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2L TRANSISTOR(NPN) FEATURES 1.BASE ∙ High DC current gain ∙ Electrically similar to popular TIP122 ∙ Built-in a damper diode at E-C |
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O-251/TO-252-2L MJD122 O-251 O-252-2L TIP122 | |
SID15N10
Abstract: MosFET 15N10
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SID15N10 O-251 SID15N10 O-251 15N10 22-Apr-2013 MosFET 15N10 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD127 TRANSISTOR NPN FEATURES • · · 1. BASE High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C 2. COLLECTOR |
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O-251/TO-252-2Plastic-Encapsulate O-251 O-252-2 MJD127 TIP127 -100V -16mA -80mA | |
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SID05N10
Abstract: MosFET 05n10
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SID05N10 O-251 SID05N10 O-251 05N10 40nction 300us, 26-Dec-2011 MosFET 05n10 | |
c2611 transistor
Abstract: transistor C2611 transistor npn Pcm 1W C2611 200YA
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O-251 C2611 O-251 100mA c2611 transistor transistor C2611 transistor npn Pcm 1W 200YA | |
KPE-251
Abstract: KPE-253 KPEG251 KPEG
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KPE-251 KPE-253 KPEG253) KPE-251 KPE-253 KPEG251 KPEG | |
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Contextual Info: SbE » • 7^2*1237 GDMD0Ö3 131 M S G T H Æ 7 S G S -T H O M S O N Ä 7# RiflDMlltLiOTOIiMDeg T~ 2^ / M 54H C 251 M 74H C 251 S G S-TH0nS0N 8-CHANNEL MULTIPLEXER 3-STATE ■ HIGH SPEED tPD = 18 ns (TYP.) at V c c = 5V ■ LOW POWER DISSIPATION ICC = 4 pA (MAX.) at Ta = 25°C 6V |
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54/74LS251 | |
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Contextual Info: H ig h - S p e e d 51 C M O S r 8 S I ^ f c t is it QS54/74FCT251T In p u t QS54/74FCT2151T Q u a l it y M llltip lB X B T S S e m ic o n d u c to r , In c. FEATURES/BENEFITS DESCRIPTION • Pin and function compatible to the 74F151/251 74FCT151/251 and 74FCT151T/251T |
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QS54/74FCT251T QS54/74FCT2151T 74F151/251 74FCT151/251 74FCT151T/251T MIL-STD-883, 2151T MDSL-00005-04 | |
TO-251
Abstract: TO-251 weight TO-251 fairchild TO-251 Package
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O-251 O-251 O-251, TO-251 TO-251 weight TO-251 fairchild TO-251 Package | |
n 251 zContextual Info: AßfeCGrA Matched GaAs SP3T Switch 5-2000 MHz SW-247/251 FP-17 • Low Insertion Loss, 1.0 dB Typical ■ Fast Switching Speed, 20 ns Typical ■ Ultra Low DC Power Consumption, 0.22m A Typical ■ Integral TTL SW -247 or C M O S (SW-251) Driver 0.150 7 EQUAL SPACES I |
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SW-251) FP-17 SW-247/251 n 251 z | |
1ld2
Abstract: e527 IL0251
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023b35b IL250/251/252 ILD250/251/252 IL/ILD250/251/252 25ilA 20ttA IUILD2S0/251/252 1ld2 e527 IL0251 | |
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Contextual Info: 120 Amp Schottky OR’ing Rectifier HS1 251 0 —HS1 251 5 Dim. Inches A B C D E F G H J K L M illim eter Minimum Maximum Minimum 1.52 .725 .605 1.182 .745 .152 38.61 1.56 18.42 .775 15.37 .625 30.02 1.192 18.92 .755 3.86 .160 1 /4 -2 0 UNC-2B 13.84 .555 3.96 |
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HS12510* HS12515* tic2161 | |
125NQ015
Abstract: HS12510 HS12515 9500P
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HS12510* HS12515* 125NQ015 HS12510 HS12515 9500P | |