C 251 C Search Results

Contextual Info: 6,1 P C -Board layout view component side thickne ss 1,6 mm 2,9 Connection retention and insertion fo rce s on the PCB = 25 / 80 N 09 66 251 3533 M3 1 09 66 251 6533 M3 2 09 66 251 7533 M3 3 09 66 251 3513 4 -4 0 UNC 1 09 66 251 6513 4 -4 0 UNC 2 09 66 251 7513

intel chips 8x930

Abstract: C-CAP "8x930Hx"
Contextual Info: C Program Library for TASKING Inc. MCS 251 8x930 USB C program library ® For TASKING Inc. MCS 251 8x930 USB software Author: Walter Banks, Jr. Friday, January 20, 1998 01/20/98 Page 1 of 33 ® C Program Library for TASKING Inc. MCS 251 8x930 USB Information in this document is provided in connection with Intel products. No license, express or

2CDS 251 001

Abstract: R0204 2CDS 251 R0404 R0064 R0104 R0164 204C 46470 46840
Contextual Info: System pro M compact Miniature circuit-breakers S 200 series S 200-C Selection table C 6000 No. of poles rated current In A order details type code order code bbn 40 16779 EAN 1 0.5 1 1.6 S 201-C 0.5 S 201-C 1 S 201-C 1.6 2CDS 251 001 R0984 2CDS 251 001 R0014

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 MJD122 Plastic-Encapsulate Transistors TRANSISTOR（NPN） TO-251 FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR 3.EMITTER

SW-251

Contextual Info: MATCHED GaAs SP3T SWITCH MODELS SW-247/251 5-2000 MHz Low Insertion Loss, 1.0 dB Typical Fast Switching Speed, 20 ns Typical Ultra Low DC Power Consumption, 0.22mA Typical Integral TTL SW-247 or CMOS (SW-251) Driver Guaranteed Specifications* (F ro m - 5 5 ° C t o + 8 5 ° C )

TRANSISTOR tip122

Abstract: MJD122 TIP122 TO252-2
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2 TRANSISTOR NPN FEATURES 1. BASE • · · High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2L TRANSISTOR（NPN） FEATURES 1.BASE ∙ High DC current gain ∙ Electrically similar to popular TIP122 ∙ Built-in a damper diode at E-C

SID15N10

Abstract: MosFET 15N10
Contextual Info: SID15N10 15A, 100V, RDS ON 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-251 DESCRIPTION The SID15N10 provide the designer with the best combination of fast switching. The TO-251 package is

c2611 transistor

Abstract: transistor C2611 transistor npn Pcm 1W C2611 200YA
Contextual Info: TO-251 Plastic-Encapsulate Transistors C2611 TRANSISTOR NPN FEATURES .• > : L ^ rer d is s ip a t io n ''• ¿ Ì ì W / Ì Ì Ì m Ì . ^ S ~ '/ V ^ v i - • & ’ TO-251 P cm: ^ ' 1—ÎÎ if •- » - > 'ÿ - 1W (Tamb=25°C) C o lle c t o r c u rr e n t

KPE-251

Abstract: KPE-253 KPEG251 KPEG
Contextual Info: PIEZO INDICATOR Internal C ir lu t r J Type Shape KPE-251 KPE-253 R o H S Compliant AvalaW c eg KPEG 251 .KPEG253 M o d e l N um b er K P E -2 5 1 Rated Frequency (Hz) K P E -2 5 3 3.500 1 500 Operating Voltage Range (VDC) 4-28 Current Consumption (mA> Max 5@ 12VD C

Contextual Info: SbE » • 7^2*1237 GDMD0Ö3 131 M S G T H Æ 7 S G S -T H O M S O N Ä 7# RiflDMlltLiOTOIiMDeg T~ 2^ / M 54H C 251 M 74H C 251 S G S-TH0nS0N 8-CHANNEL MULTIPLEXER 3-STATE ■ HIGH SPEED tPD = 18 ns (TYP.) at V c c = 5V ■ LOW POWER DISSIPATION ICC = 4 pA (MAX.) at Ta = 25°C 6V

Contextual Info: H ig h - S p e e d 51 C M O S r 8 S I ^ f c t is it QS54/74FCT251T In p u t QS54/74FCT2151T Q u a l it y M llltip lB X B T S S e m ic o n d u c to r , In c. FEATURES/BENEFITS DESCRIPTION • Pin and function compatible to the 74F151/251 74FCT151/251 and 74FCT151T/251T

TO-251

Abstract: TO-251 weight TO-251 fairchild TO-251 Package
Contextual Info: TO-251 Package Dimensions TO-251 FS PKG Code 39 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.44 A 6.80 6.35 5.54 5.14 2.50 2.10 1.27 0.50 1.52 0.70 1 C 2 0.60 0.40 6.30 5.90 2.28 1.60 3 1.14

n 251 z

Contextual Info: AßfeCGrA Matched GaAs SP3T Switch 5-2000 MHz SW-247/251 FP-17 • Low Insertion Loss, 1.0 dB Typical ■ Fast Switching Speed, 20 ns Typical ■ Ultra Low DC Power Consumption, 0.22m A Typical ■ Integral TTL SW -247 or C M O S (SW-251) Driver 0.150 7 EQUAL SPACES I

Contextual Info: 120 Amp Schottky OR’ing Rectifier HS1 251 0 —HS1 251 5 Dim. Inches A B C D E F G H J K L M illim eter Minimum Maximum Minimum 1.52 .725 .605 1.182 .745 .152 38.61 1.56 18.42 .775 15.37 .625 30.02 1.192 18.92 .755 3.86 .160 1 /4 -2 0 UNC-2B 13.84 .555 3.96

125NQ015

Abstract: HS12510 HS12515 9500P
Contextual Info: 120 Amp Schottky OR'ing Rectifier HS1 251 0 —HS1 251 5 Dim. Inches A B C D E F G H J K L M illim eter Minimum Maximum Minimum 1.52 .725 .605 1.182 .745 .152 38.61 1.56 18.42 .775 15.37 .625 30.02 1.192 18.92 .755 3.86 .160 1 /4 -2 0 UNC-2B 13.84 .555 3.96

ur4120

Abstract: RURD4120S9A TA49036 RURD4120 RURD4120S
Contextual Info: RURD4120, RURD4120S S E M I C O N D U C T O R 4A, 1200V Ultrafast Diodes April 1995 Features Packages • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . <70ns JEDEC STYLE TO-251 ANODE o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C

IRFP250

Abstract: IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET
Contextual Info: IRFP250/251/252/253 IRF250/251/252/253 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • L o w e r R d s ON Im p ro ve d in d u c tiv e ru g g e d n e s s F ast s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e

RUR620

Abstract: RUR610 RURD610 RURD610S RURD615 RURD615S RURD620 RURD620S
Contextual Info: S E M I C O N D U C T O R RURD610, RURD615, RURD620, RURD610S, RURD615S, RURD620S 6A, 100V - 200V Ultrafast Diodes March 1997 Features Packaging • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . . . .<30ns JEDEC STYLE TO-251

RUR460

Abstract: RUR450 RURD440 RURD440S RURD450 RURD450S RURD460 RURD460S RUR440
Contextual Info: S E M I C O N D U C T O R RURD440, RURD450, RURD460, RURD440S, RURD450S, RURD460S 4A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC STYLE TO-251 o ANODE CATHODE

Intel Evaluation Board 82930

Abstract: 82930
Contextual Info: DEVELOPMENT SOFTWARE TASKING, INC. TASKING CrossView 251 ROM Monitor Debugger • ■ ■ ■ ■ ■ ■ Code in C, Debug in C Real Windows* Interface Conditional Code and Software Data Breakpoints I/O Simulation Using Files, Screen or Keyboard Full Trace Including C, Assembler

Contextual Info: DEVELOPMENT SOFTWARE TASKING, INC. TASKING CrossView 251 Simulator • ■ ■ ■ ■ ■ ■ ■ Code in C, Debug in C Real Windows* Interface Conditional Code and Software Data Breakpoints I/O Simulation Using Files, Screen or Keyboard Full Trace Including C, Assembler

Contextual Info: SSM20G45EH,J N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR G High input impedance High peak current capability 4.5V gate drive Strobe flash applications C E V CES 450V ICP 130A TO-252 H C G G C E TO-251 (J) E Absolute Maximum Ratings Symbol Parameter Rating

RUR660

Abstract: RUR640 RURD640 RURD640S RURD650 RURD650S RURD660 RURD660S RUR650
Contextual Info: S E M I C O N D U C T O R RURD640, RURD650, RURD660, RURD640S, RURD650S, RURD660S 6A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC STYLE TO-251 • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175oC