C 2120 Y Search Results

transistor TT 2146

Abstract: ssm2300
Contextual Info: SSM-2120/SSM-2122 PMI DYNAMIC RANGE PROCESSOR/DUAL VCA P r e c i s i o n M o n o l i t h i c * In c. FEATURES GENERAL DESCRIPTION • • • • • • The SSM-2120 is a monolithic integrated circuit designed tor the purpose of processing dynamic signals in various analog sys­

Contextual Info: SIEMENS ISDN Remote Power Controller IRPC PSB 2120 CM OS IC Features • Switched mode D C/DC-converter • CCITT (1.430) ISDN compatible • Integrated 200 V power FET (only PSB 2120-P in P-DIP-22) • Low power dissipation • Supply voltage range 10 V to 60 V

Audio Processor IC fader

Abstract: SSM2120P audio compressor expander IC 10 pin ssm2300 port/SSM-2018S
Contextual Info: SSM-2120/SSM-2122 PMI DYNAMIC RANGE PROCESSOR/DUAL VCA S p ^ M o n o lith ic s 1 FEATURES G E N E R A L D E S C R IP T IO N • • • • • • The SSM-2120 is a monolithic integrated circuit designed for the purpose of processing dynamic signals in various analog sys­

Contextual Info: This document was generated on 08/15/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 15-91-2120 Active C-Grid Products 2.54mm Pitch C-Grid® Header, Surface Mount, Dual Row, Vertical, 12 Circuits, Tin

Contextual Info: This document was generated on 03/29/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 15-91-2120 Active C-Grid / SL Products 2.54mm Pitch C-Grid® Header, Surface Mount, Dual Row, Vertical, 12 Circuits, Tin

Contextual Info: This document was generated on 05/09/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 90119-2120 Active Overview: Description: C-Grid III C-Grid III™ Crimp Terminal, 26-28 AWG, Bag, Tin/Lead Sn/Pb Documents: 3D Model

1.5D-QEV

Contextual Info: ZOOEEOrS ' ON Q N lM VHQ £# m ia S P E C I F I C A T I O N DIELECTRIC WITHSTANDING VOLTAGE: 250V A. C p.m. s FOR ONE MINUTE INSULATION RESISTANCE: MORE THAN 500 MEG OHMS AT 250V D. C APPLICABLE WIRE: 1.5D-QEV POP-0-2120(98.02) ft m film s A. C 250Vr. m. s ( C T 1 ^

KTA950

Abstract: ktc2120 C 2120 Y NPN transistor KTC 200
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE POT PROCESS KTC 2120 APPLICATIONS I Low F r e q u e n c y P o w e r A m p lifie rs ( B - C la s s P u s h - p u l l , P o = lW ) I General P u r p o s e S w itc h in g C i r c u its FEATURES »Excellent Ii f e

POS-1400

Abstract: hx 002
Contextual Info: VOLTAGE CONTROLLED OSCILLATORS Plug-In LINEAR TUNING 15 to 2120 MHz POS FREQ. MHz MODEL NO. 1 10 100 1 kHz kHz kHz MHz Typ. Typ. Typ. Typ. Max. Typ. (V) Nom. (mA) Max. Note B C O N N E C T I O N 11 16 16 16 -86 -88 -87 -83 -145 -150 -150 -150 0.06 0.06 0.15

Contextual Info: VOLTAGE CONTROLLED OSCILLATORS Plug-In LINEAR TUNING 15 to 2120 MHz POS FREQ. MHz MODEL NO. 1 10 100 1 kHz kHz kHz MHz Typ. Typ. Typ. Typ. Max. Typ. (V) Nom. (mA) Max. Note B C O N N E C T I O N 11 16 16 16 -86 -88 -87 -83 -145 -150 -150 -150 0.06 0.06 0.15

2SC2120

Abstract: 2sC2120 transistor Audio Power Amplifier TOSHIBA 2SC2120-Y 2SC2120-O 2SC2120-0 2SA950 2SC2120 0 transistor 2sc2120 ic 824 J
Contextual Info: J D > N P N I^ ICON o NPN 9 5/ 7 ^ 5 JW B h EPITAXIAL > 9 ^ TRANSISTOR r % P C T B S C (P C T PROCESS 2SC 2120 A udio Pow er A m p l if i e r A p p l i c a t i o n s V* : hpBj = 100~ -320 2SA950 ¿ a y / J / y i i J K i N t o 1W O u t p u t A p p l i c a t i o n s

2120 transistor

Abstract: 2SC2120
Contextual Info: M C C TO-92 Plastic-En capsulate tra n sisto rs 2SC 2120 TRANSISTOR NPN FEATURES Pcm: Ic m ; 0.6W (Tam b=25C) 0.8 A voltage V(BR)CBO: 3 5 V temperature range Tstg: -55”C to + 150°C Tj: ELECTRICAL 1 50°C CHARACTERI STI CS (Tamb=25°C u n l e s s o t h e r w is e

IC ca 4558

Contextual Info: SWITCHING OPERATIONAL AMPLIFIER NJM2120 T h e N JM 2 1 2 0 is a d u a l o p eratio n al am plifier o f 2 -IN P U T a n d l-O U T P U T w ith a n alo g switch. T h e N JM 2120 c an be used as a n alo g sw itch u n d e r the co n d itio n o f G v = 0 dB, as S w itc h + A m p in o rd e r th a t each gain A o r B c an be adjusted

njm2120 equivalent

Abstract: NJM2120 DDG3777 NJM212DD NJM4558 gv 271
Contextual Info: SWITCHING OPERATIONAL AMPLIFIER NJM2120 T h e N JM 2 1 2 0 is a d u a l o p eratio n al am plifier o f 2 -IN P U T a n d 1 -O U T P U T w ith a n alo g switch. T h e N JM 2120 c an be used as a n alo g sw itch u n d e r th e co n d itio n o f G v = 0 dB, as S w itc h + A m p in o rd e r th a t each g a in A o r B c an b e adjusted

Contextual Info: AH115 The Communications Edge TM 1/2 Watt, High Linearity InGaP HBT Amplifier Product Features • 1800 – 2300 MHz • +28 dBm P1dB • +44 dBm Output IP3 • 14 dB Gain @ 1960 MHz • Single Positive Supply +5 V • MTTF >100 Years • SOIC-8 SMT Package

Contextual Info: AH115 The Communications Edge TM 1/2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Description • 1800 – 2300 MHz • +28.5 dBm P1dB • +44 dBm Output IP3 • 14 dB Gain @ 1960 MHz • Single Positive Supply +5 V • MTTF >100 Years

Contextual Info: AH115 The Communications Edge TM 1/2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Description • 1800 – 2300 MHz • +28 dBm P1dB • +44 dBm Output IP3 • 14 dB Gain @ 1960 MHz • Single Positive Supply +5 V • MTTF >100 Years

SGD160

Contextual Info: SED1601 CMOS DOT MATRIX HIGH DUTY LCD DRIVER • 80-bit High Voltage Resistant Output • 1/100 to 1/300 in Display Duty • CMOS High Voltage Resistant Process • DESCRIPTION The SED1601 is an 80-output dot matrix LCD segment column driver for driving a high-capacity LCD panel

C 2120 Y

Abstract: 200x640 SED1610 631 450 SED1330 application note
Contextual Info: CMOS DOT MATRIX HIGH DUTY LCD DRIVER • 80-blt High Voltage Resistant Output • 1/100 to 1/300 In Display Duty • CMOS High Voltage Resistant Process DESCRIPTION The SED1601 is an 80-output dot matrix LCD segment column driver for driving a high-capacity LCD panel

C 2120 Y

Abstract: SED1330 application note SED1330 SED1335 SED1341 SED1351 SED1610 SED1630 SED1631 SED1632
Contextual Info: SED1601 CMOS DOT MATRIX HIGH DUTY LCD DRIVER High Voltage Resistant Output • 80-bit 1/100 to 1/300 in Display Duty • CMOS High Voltage Resistant Process • • DESCRIPTION The SED1601 is an 80-output dot matrix LCD segment column driver for driving a high-capacity LCD panel

SAWEN1G84

Abstract: 8Y MARKING murata SAW
Contextual Info: SAW FILTER FOR GSM1800/GSM1900 Rx Murata part number : SAWEN1G84CY0F00(fc=1842.5MHz) Package Dimensions Specification Specification Item -30 to 85°C 1.80±0.05 (9) (8) (7) (6) 8 Y (5) Dot Marking(0.3) 1.35±0.05 (10) Nominal Center Frequency(fc) Insertion Loss

Contextual Info: AH115 / ECP050G The Communications Edge TM ½ Watt, High Linearity InGaP HBT Amplifier Product Features Product Description • 1800 – 2300 MHz • +28.5 dBm P1dB • +44 dBm Output IP3 • 14 dB Gain @ 1960 MHz • +5V Single Positive Supply • MTTF > 100 Years

Q67100-H6278

Abstract: Q67100-H8645 SIPMOS 2120P
Contextual Info: ISDN Remote Power Controller IRPC PSB 2120 CMOS IC Features ● Switched mode DC/DC-converter ● Switched mode DC/DC-converter ● CCITT (I.430) ISDN compatible ● Integrated 200 V power FET (only PSB 2120-P in P-DIP-22) ● Low power dissipation ● Supply voltage range 10 V to 60 V

5.1 subwoofer printed circuit boards

Abstract: 5.1 subwoofer printed circuit board 5.1 audio amplifier board 5.1 surround 5.1 channel surround sound IC 200 watts subwoofer boards home theater printed circuit board DDX-8001 200w subwoofer circuit ddx-2052
Contextual Info: i n s p i r e d d i g i t a l a u d i o s o l u t i o n s High-Efficiency All-Digital Amplification a p o g e e t e c h n o l o g y, i n c w w w . a p o g e e d d x . c o m The Growth of the Class D, High-Efficiency Amplifier Market Today’s consumers insist on buying lifestyle-oriented products that deliver rich