C 2120 Y Search Results

Contextual Info: This document was generated on 05/09/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 90119-2120 Active Overview: Description: C-Grid III C-Grid III™ Crimp Terminal, 26-28 AWG, Bag, Tin/Lead Sn/Pb Documents: 3D Model

KTA950

Abstract: ktc2120 C 2120 Y NPN transistor KTC 200
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE POT PROCESS KTC 2120 APPLICATIONS I Low F r e q u e n c y P o w e r A m p lifie rs ( B - C la s s P u s h - p u l l , P o = lW ) I General P u r p o s e S w itc h in g C i r c u its FEATURES »Excellent Ii f e

POS-1400

Abstract: hx 002
Contextual Info: VOLTAGE CONTROLLED OSCILLATORS Plug-In LINEAR TUNING 15 to 2120 MHz POS FREQ. MHz MODEL NO. 1 10 100 1 kHz kHz kHz MHz Typ. Typ. Typ. Typ. Max. Typ. (V) Nom. (mA) Max. Note B C O N N E C T I O N 11 16 16 16 -86 -88 -87 -83 -145 -150 -150 -150 0.06 0.06 0.15

Contextual Info: VOLTAGE CONTROLLED OSCILLATORS Plug-In LINEAR TUNING 15 to 2120 MHz POS FREQ. MHz MODEL NO. 1 10 100 1 kHz kHz kHz MHz Typ. Typ. Typ. Typ. Max. Typ. (V) Nom. (mA) Max. Note B C O N N E C T I O N 11 16 16 16 -86 -88 -87 -83 -145 -150 -150 -150 0.06 0.06 0.15

2SC2120

Abstract: 2sC2120 transistor Audio Power Amplifier TOSHIBA 2SC2120-Y 2SC2120-O 2SC2120-0 2SA950 2SC2120 0 transistor 2sc2120 ic 824 J
Contextual Info: J D > N P N I^ ICON o NPN 9 5/ 7 ^ 5 JW B h EPITAXIAL > 9 ^ TRANSISTOR r % P C T B S C (P C T PROCESS 2SC 2120 A udio Pow er A m p l if i e r A p p l i c a t i o n s V* : hpBj = 100~ -320 2SA950 ¿ a y / J / y i i J K i N t o 1W O u t p u t A p p l i c a t i o n s

2120 transistor

Abstract: 2SC2120
Contextual Info: M C C TO-92 Plastic-En capsulate tra n sisto rs 2SC 2120 TRANSISTOR NPN FEATURES Pcm: Ic m ; 0.6W (Tam b=25C) 0.8 A voltage V(BR)CBO: 3 5 V temperature range Tstg: -55”C to + 150°C Tj: ELECTRICAL 1 50°C CHARACTERI STI CS (Tamb=25°C u n l e s s o t h e r w is e

njm2120 equivalent

Abstract: NJM2120 DDG3777 NJM212DD NJM4558 gv 271
Contextual Info: SWITCHING OPERATIONAL AMPLIFIER NJM2120 T h e N JM 2 1 2 0 is a d u a l o p eratio n al am plifier o f 2 -IN P U T a n d 1 -O U T P U T w ith a n alo g switch. T h e N JM 2120 c an be used as a n alo g sw itch u n d e r th e co n d itio n o f G v = 0 dB, as S w itc h + A m p in o rd e r th a t each g a in A o r B c an b e adjusted

Contextual Info: SWITCHING OPERATIONAL AMPLIFIER NJM2120 T h e N JM 2 1 2 0 is a d u a l o p eratio n al am plifier o f 2 -IN P U T a n d 1 -O U T P U T w ith a n alo g switch. T h e N JM 2120 c an be used as a n alo g sw itch u n d e r th e co n d itio n o f G v = 0 dB, as S w itc h + A m p in o rd e r th a t each g a in A o r B c an b e adjusted

SGD160

Contextual Info: SED1601 CMOS DOT MATRIX HIGH DUTY LCD DRIVER • 80-bit High Voltage Resistant Output • 1/100 to 1/300 in Display Duty • CMOS High Voltage Resistant Process • DESCRIPTION The SED1601 is an 80-output dot matrix LCD segment column driver for driving a high-capacity LCD panel

C 2120 Y

Abstract: 200x640 SED1610 631 450 SED1330 application note
Contextual Info: CMOS DOT MATRIX HIGH DUTY LCD DRIVER • 80-blt High Voltage Resistant Output • 1/100 to 1/300 In Display Duty • CMOS High Voltage Resistant Process DESCRIPTION The SED1601 is an 80-output dot matrix LCD segment column driver for driving a high-capacity LCD panel

SAWEN1G84

Abstract: 8Y MARKING murata SAW
Contextual Info: SAW FILTER FOR GSM1800/GSM1900 Rx Murata part number : SAWEN1G84CY0F00(fc=1842.5MHz) Package Dimensions Specification Specification Item -30 to 85°C 1.80±0.05 (9) (8) (7) (6) 8 Y (5) Dot Marking(0.3) 1.35±0.05 (10) Nominal Center Frequency(fc) Insertion Loss

Q67100-H6278

Abstract: Q67100-H8645 SIPMOS 2120P
Contextual Info: ISDN Remote Power Controller IRPC PSB 2120 CMOS IC Features ● Switched mode DC/DC-converter ● Switched mode DC/DC-converter ● CCITT (I.430) ISDN compatible ● Integrated 200 V power FET (only PSB 2120-P in P-DIP-22) ● Low power dissipation ● Supply voltage range 10 V to 60 V

Contextual Info: ASG330 DC-2500 MHz SiGe HBT Amplifier Description Features •SiGe Technology ·11 dB Gain at 1950 MHz ·+20 dBm P1dB ·+43 dBm Output IP3 ·3.8 dB Noise Figure ·MTTF > 100 Years ·Operate at Single +5 V Supply ·SOT-89 Surface Mount Package The ASG330 is designed for high linearity, high

BYS 21-45

Contextual Info: SIEMENS Preliminary ISDN Remote Power Controller IRPC PSB2120 Data Sheet Rev. 1.0 Siemens AG 9/88 Siemens AG Proprietary Informaion The information in this document describes the type of component and shall not b« con­ sidered as assured characteristics. Terms of delivery and rights to change design reserved

emerson rosemount

Abstract: DPCO 05ATEX2130X PA66 - GF 25 relay
Contextual Info: Product Data Sheet February 2015 00813-0100-4030, Rev GE Rosemount 2120 Full-featured Vibrating Fork Liquid Level Switch  Designed for operation in process temperatures of –40 to 302 °F –40 to 150 °C  Adjustable switching delay for turbulent or

Contextual Info: SED1630 CMOS DOT MA TRIX HIGH DUTY LCD COMMON DRIVER S-MOS Systems, Inc. October, 1996 Version 1.0 Prelim inary S-MOS Systems, Inc. • 150 River Oaks Parkway* San Jose, CA 95134*Tel: (408) 922-0200* Fax: (408) 922-0238 • 0D D4731 Ifll ■ THIS PAGE INTENTIONALLY BLANK

ECP200D

Abstract: ECP200D-G ECP200D-PCB1960 ECP200D-PCB2140 ECP200D-PCB900 JESD22-A114
Contextual Info: ECP200D The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier • +5V Single Positive Supply • MTTF > 100 Years • 16-pin 4x4mm Lead-free/Green/ RoHS-compliant QFN Package Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure

Contextual Info: PRECI SI ON BULK METAL FOIL T E C H N O L O G Y VISHAY VISHAY 1268 SERIES Precision TVimming Potentiometers RESISTORS 3/8" Square, RJ24 S t y le Industrial & Aerospace Grade Trimmers FEATURES • Temperature Coefficient of Resistance TCR : ±20 ppm/°C Max2. (-55°C to +150°C Ref. @ 25°C);

EL2120CS

Abstract: diodes B2V datasheet m 2120 400X EL2120C EL2120CN QCX0002 npn TTL LOGIC pspice model
Contextual Info: 100 MHz Current Feedback Amplifier Features General Description  Excellent differential gain and phase on g 5V to g 15V supplies  100 MHz b 3 dB bandwidth from gains of g 1 to g 10  700 V ms slew rate  0 1 dB flatness to 20 MHz  Output disable in 50 ns - remains

Pulse Transformer ZKB

Abstract: siemens transformer Pulse Transformer VAC ZKB TRANSISTOR SMD MARKING CODE 1P 702 Z smd TRANSISTOR zkb 416 TRANSISTOR SMD MARKING CODE 702 zkb* vac smd transistor n48 vac zkb
Contextual Info: SIEM ENS Digital Terminal ICs sv o ^ s SX * * * * S ICs for Communications Power Controller PSB 2120 PSB 2121 Data Sheets 12.92 "*• 0 3 1 3 4 PSB 2120; PSB 2121 Revision History: Original Version 12.92 Previous Releases: Page Subjects changes since last revision

Contextual Info: Infrared Fiber Optic Polymer Bolt Temperature System Model 4121 Model 4121 Polymelt Temperature System 98° to 463°C 210° to 865°F In Sub Ranges ߜ Response Time 10 Milliseconds ߜ Fiber Optic Cable ߜ Withstands Pressure up to 30,000 psi ߜ FM and CSA Approved

Contextual Info: ECP200D The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier • +5V Single Positive Supply • MTTF > 100 Years • 16-pin 4x4mm lead-free/green/ RoHS-compliant QFN Package Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure

um musical ic

Abstract: C 2120 Y
Contextual Info: N MUSICAL INSTRUMENT WITH HIGH • GENERAL DESCRIPTION The NJU5201 is a C-MOS LSI for F-scale musical instru­ ment with high accurate pitch frequency, the error rate of which is within 1.7cents at C6. It consists of oscillator for use with either the quartz crystal or a ceramic resonator, programmable di­

Contextual Info: PRECI SI ON BULK METAL FOIL T E C H N O L O G Y VISHAY VISHAY 1248 SERIES Precision TVimming Potentiometers RESISTORS ▼ 1/4" Rectilinear, RJ26 Style — Industrial & Aerospace Grade Trimmers FEATURES • Temperature Coefficient of Resistance TCR : ±20 ppm/°C Max2. (-55°C to +150°C Ref. @ +25°C);