C 1006 TRANSISTOR Search Results

MOC1005

Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC1005 M O C 1006 6-P in D IP O p to is o la to rs Transistor O utput These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • •

ic 1006

Abstract: RN1003 RN1001 RN1002 RN1004 RN1005 RN1006 RN2001 RN2006
Contextual Info: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design

RN1001

Abstract: RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
Contextual Info: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design

Contextual Info: CGD1042L 1 GHz, 23 dB gain GaAs low current power doubler Rev. 1 — 10 March 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115AE package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.

TRANSISTOR 100-6

Abstract: transistor A 1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
Contextual Info: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design

transistor A 1006

Abstract: RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006 22 1006
Contextual Info: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design

TPC8204

Contextual Info: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8. Low Drain-Source ON Resistance : RßS (ON) = 16

Contextual Info: TOSHIBA TPCS8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSH T P C S 8 1 02 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS

Contextual Info: TOSHIBA TPCS8101 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSH T P C S 8 1 01 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TSSOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS

Contextual Info: TOSHIBA TPC8303 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII TPC8303 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8 Low Drain-Source ON Resistance : RßS (ON) = 27 mH (Typ.)

2SJ148

Abstract: 2SK982
Contextual Info: TOSHIBA 2SK982 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK982 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS • • • • • 5.1 MAX. Excellent Switching Times : ton = 14 ns Typ. High Forward Transfer Admittance

tpc8101

Abstract: TPCS8101 tpc81
Contextual Info: TOSHIBA TPCS8101 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U -M O SÏÏ T P C S 8 1 01 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TSSOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS

Contextual Info: HN1L03FU TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-P CHANNEL MOS TYPE HN1L03FU HIGH SPEED SWITCHING APPLICATIONS U nit in mm ANAROG SWITCH APPLICATIONS Q l, Q2 COMMON • Low Threshold Voltage Q l : Vth = 0 .8 -2 .5 V Q2 : Vth = - 0 . 5 ~ - l . 5 V

Contextual Info: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8, 8 5 n n n n Low Drain-Source ON Resistance

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

Contextual Info: TOSHIBA RN1001 ~RN1006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1001, RN1002, RN1003 RN1004, RN1005, RN1006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors

Contextual Info: RN1001 ~RN1006 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1001, RN1002, RN1003 RN 1004, RN1005, RN1006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 5.1 MAX. • W ith Built-in Bias Resistors

nec k 1006

Abstract: nec 1006 2SK3783 2SK378
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3783 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3783 is suitable for converter of ECM. 1.0 0.6 FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

BCD Semiconductor

Abstract: transistor 2808 voltage to bcd
Contextual Info: Preliminary Datasheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. • Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V High Voltage and Low Standby Power Circuit for

EU13003E

Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003E series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power.

2N918

Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544
Contextual Info: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574

BFY70

Abstract: PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780
Contextual Info: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) m ax

sd1006

Abstract: C22B so do chan T0117
Contextual Info: GS-THOMSON ¿7/ SH0 £[ 8 IHiOT(MD(gS TELECOM AND DATA COMMUNICATIONS RF & MICROWAVE TRANSISTORS J S TO 39 40 . 900 MHz CLASS A LINEAR FOR CATV/MATV APPLICATIONS Type PIU Package V(BR) CEO min It (V) (MHz) @ •c c 12e NF (mA) c 22b* (pF) (dB) @ ■c f

Contextual Info: CCD area image sensors S7030/S7031 series Back-thinned FFT-CCD The S7030/S7031 series is a family of FFT-CCD image sensors speci¿cally designed for low-light-level detection in scienti¿c applications. By using the binning operation, the S7030/S7031 series can be used as a linear image sensor having a long aperture