C 10 PH DIODE Search Results

byv26c ph

Abstract: philips diode PH 15
Contextual Info: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

1N4148 SOD-80 ST

Abstract: 1N4148 SOD-80 bat41 BAT46 1N914 ph bat41 600 033V BAS40-02 BAV10 VMN-SG2114
Contextual Info: V i s h ay In t e r t e c h n o l o g y, In c . Diodes -Focus Products for Multi-Market Applications AND TEC I INNOVAT O L OGY Small-Signal Schottky and Switching Diodes N HN DIODES O 19 62-2012 Available in Surface-Mount and Leaded Packages FEATURED PACKAGES

Contextual Info: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage

K375

Abstract: MKL series vai 27 lf OM35F120PB OM45L120PB OM50F60PB OM60L60PB 50F60 60L60
Contextual Info: OM6OL6OPB OM45L120PB Preliminary Data Sheet OM50F60PB OM35F12QPB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp Dual IGBTs With FRED Diodes FEATURES • Includes Internal FRED Diode • Rugged Package Design

WESTCODE SW

Contextual Info: T E C H N IC A L P U B L IC A T IO N $ WESTCODE SEMICONDUCTORS D P20 ISSUE 2 May, 1989 — - - - - Stud-Base Silicon Rectifier Diodes Type PCN/PCR020 30amperes average: up to 1200 volts Vr r m RATINGS Maximum values at 175°C Tj unless stated otherwise

marking code PH 200

Abstract: BAV70WS
Contextual Info: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current

TLP251

Contextual Info: T O S H IB A PH O T O C O U PLER SEMICONDUCTOR TOSHIBA TEC H N IC A L T L P 2 51 D A TA G a A íA s IRED & PHOTO-IC TLP251 U n it in mm INVERTER FOR AIR CONDITIONOR INDUCTION HEATING TRANSISTOR INVERTER PO W ER MOS FET GATE DRIVE IGBT GATE DRIVE The Toshiba TLP251 consists of a G a A iA s lig h t em itting diode and

M3227

Abstract: M3071 m3240 BR216 diode JJ ptm1 FN1510
Contextual Info: PHILIPS INTER NA TIONAL SbE D 711Dö5ti DDM1D7M 37T • PHIN BR216 T-ll-23 DUAL ASYMMETRICAL BREAKOVER DIODE The B R 2 1 6 is a monolithic dual asymmetrical 65 V breakover diode in the T 0 -2 2 0 A B outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

BV 480

Abstract: SOIC-14
Contextual Info: Semiconductor, Inc. EiMD05C8 thru EiMD24C8 Compact, Bidirectional, Eight Line Monolithic TVS Diode Network FEATURES • • • • • • • Protects eight I/O lines Monolithic IC for higher reliability at lower cost Manufactured using Proprietary technology

smd diode schottky code marking 2F

Contextual Info: Schottky Barrier Diode Single Diode m tm OUTLINE Package : 2F D2FS6 Unit^mm Weight 0.16g Typ io7 - F v - ? Cathode mark 60V 1.5A ®i Feature • Tj=150°C ' P rrsm T’A '^ V S ' i í SIÍE -<2> 1 1Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD T ype No.

BYX99-300

Abstract: BYX99 BYX99-300R 7110A2E
Contextual Info: BYX99 S E R IE S T-O S-iT PHILIPS INTERNATIONAL viiosEb GDmti7G i n SbE ]> IPHIN RECTIFIER DIODES Silicon rectifier diodes in D O -4 metal envelopes, intended for use in power rectifier applications. The series consists o f the following types: Normal polarity cathode to stud ; B Y X 9 9 -3 0 0 to 1200.

Contextual Info: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic

TESLA DIODES

Abstract: PIN DIODE UMX5101 magnetic diode
Contextual Info: UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT KEY FEATURES The UMX5101 PIN diode series was designed to provide ultra low magnetic PIN diodes for in bore surface coil applications associated with higher field strength 3T and greater MR

cmos mux datasheet

Abstract: QS3S257
Contextual Info: IDTQS3S257 HIGH-SPEED CMOS SYNCHROSWITCH QUAD 2:1 MUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS SYNCHROSWITCH QUAD 2:1 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − − − − − − IDTQS3S257 Enhanced N channel FET with no inherent diode to Vcc

40H00

Abstract: ML40126 ML40126N ML44126N ML44126R ML4XX26 780nm 5v 3mW laser diode
Contextual Info: MITSUBISHI LASER DIODES ML4XX26 SERIES AIGaAs LASER DIODES TYPE NAME FEATURES DISCRIPTION M L4XX26 s erise s ta b le , s in g le a re A IG a A s tr a n s v e r s e w a v e le n g th of 7 8 0 n m la s e r m ode diodes w hich o s c illa tio n provides w ith

IRK 160

Abstract: I27900
Contextual Info: Bulletin I27132 rev. E 10/01 IRK.71, .91 SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL under approval

Contextual Info: • ■■ Micmsemi Santa Ana, CA 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 m Progresa P ow ered b y Technology Capabilities Data Sheet Solar Array Bypass Diode Features • • • • • • Very Thin Construction Low leakage reverse current

Contextual Info: Typical Size 6,4 mm X 9,7 mm TPS54673 www.ti.com SLVS433A − SEPTEMBER 2002 − REVISED FEBRUARY 2005 3ĆV TO 6ĆV INPUT, 6ĆA OUTPUT SYNCHRONOUS BUCK SWITCHER WITH DISABLED SINKING DURING STARTĆUP FEATURES D 30-mΩ, 12-A Peak MOSFET Switches for High D

PS115

Abstract: PS115 diode
Contextual Info: • ■■ Micmsemi Santa Ana, CA 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 m Progresa P ow ered b y Technology Solar Array Blocking Diode Features Very Thin Construction Passivated mesa structure for very low leakage reverse currents

Contextual Info: Typical Size 6,4 mm X 9,7 mm TPS54673 www.ti.com SLVS433A − SEPTEMBER 2002 − REVISED FEBRUARY 2005 3ĆV TO 6ĆV INPUT, 6ĆA OUTPUT SYNCHRONOUS BUCK SWITCHER WITH DISABLED SINKING DURING STARTĆUP FEATURES D 30-mΩ, 12-A Peak MOSFET Switches for High D

PA0277

Abstract: SLMA002 TPS54873 TPS54973 TPS54973PWP TPS54973PWPG4 TPS54973PWPR TPS54973PWPRG4
Contextual Info: Typical Size 6,4 mm X 9,7 mm TPS54973 www.ti.com SLVS453A − FEBRUARY 2003 − REVISED FEBRUARY 2005 3-V TO 4-V INPUT, 9-A OUTPUT SYNCHRONOUS BUCK SWITCHER WITH DISABLED SINKING DURING START-UP FEATURES D 15-mΩ MOSFET Switches for High Efficiency D D D

1 J 250

Abstract: MSC1049
Contextual Info: • ■■ Micmsemi Santa Ana, CA 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 m Progresa P ow ered b y Technology Solar Array Blocking Diode Features • • • • • • Very Thin Construction Passivated mesa structure for very low leakage reverse currents

Contextual Info: Typical Size 6,4 mm X 9,7 mm TPS54873 www.ti.com SLVS444A − OCTOBER 2002 − REVISED FEBRUARY 2005 4-V TO 6-V INPUT, 8-A OUTPUT SYNCHRONOUS BUCK SWITCHER WITH DISABLED SINKING DURING START-UP FEATURES D 30-mΩ, 12-A Peak MOSFET Switches for High D D D D

fairchild micrologic

Abstract: D9109 10-JK 9110 F 9109
Contextual Info: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit