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    C 10 PH DIODE Search Results

    C 10 PH DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    C 10 PH DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    byv26c ph

    Abstract: philips diode PH 15
    Contextual Info: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse


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    BYV26 BYV26A BYV26C BYV26D BYV26B BYV26E byv26c ph philips diode PH 15 PDF

    1N4148 SOD-80 ST

    Abstract: 1N4148 SOD-80 bat41 BAT46 1N914 ph bat41 600 033V BAS40-02 BAV10 VMN-SG2114
    Contextual Info: V i s h ay In t e r t e c h n o l o g y, In c . Diodes -Focus Products for Multi-Market Applications AND TEC I INNOVAT O L OGY Small-Signal Schottky and Switching Diodes N HN DIODES O 19 62-2012 Available in Surface-Mount and Leaded Packages FEATURED PACKAGES


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    OD-523 OD-323 OD-123 DO-35 VMN-SG2114-1202 1N4148 SOD-80 ST 1N4148 SOD-80 bat41 BAT46 1N914 ph bat41 600 033V BAS40-02 BAV10 VMN-SG2114 PDF

    Contextual Info: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage


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    LNG849RFD PDF

    K375

    Abstract: MKL series vai 27 lf OM35F120PB OM45L120PB OM50F60PB OM60L60PB 50F60 60L60
    Contextual Info: OM6OL6OPB OM45L120PB Preliminary Data Sheet OM50F60PB OM35F12QPB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp Dual IGBTs With FRED Diodes FEATURES • Includes Internal FRED Diode • Rugged Package Design


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    OM45L120PB OM50F60PB OM35F12QPB MIL-S-19500, 030-J b7flT073 D001D71 K375 MKL series vai 27 lf OM35F120PB OM60L60PB 50F60 60L60 PDF

    WESTCODE SW

    Contextual Info: T E C H N IC A L P U B L IC A T IO N $ WESTCODE SEMICONDUCTORS D P20 ISSUE 2 May, 1989 — - - - - Stud-Base Silicon Rectifier Diodes Type PCN/PCR020 30amperes average: up to 1200 volts Vr r m RATINGS Maximum values at 175°C Tj unless stated otherwise


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    PCN/PCR020 30amperes WESTCODE SW PDF

    marking code PH 200

    Abstract: BAV70WS
    Contextual Info: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current


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    BAV70WS OD-323 OD-323 marking code PH 200 BAV70WS PDF

    TLP251

    Contextual Info: T O S H IB A PH O T O C O U PLER SEMICONDUCTOR TOSHIBA TEC H N IC A L T L P 2 51 D A TA G a A íA s IRED & PHOTO-IC TLP251 U n it in mm INVERTER FOR AIR CONDITIONOR INDUCTION HEATING TRANSISTOR INVERTER PO W ER MOS FET GATE DRIVE IGBT GATE DRIVE The Toshiba TLP251 consists of a G a A iA s lig h t em itting diode and


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    TLP251 TLP251) TLP251 PDF

    M3227

    Abstract: M3071 m3240 BR216 diode JJ ptm1 FN1510
    Contextual Info: PHILIPS INTER NA TIONAL SbE D 711Dö5ti DDM1D7M 37T • PHIN BR216 T-ll-23 DUAL ASYMMETRICAL BREAKOVER DIODE The B R 2 1 6 is a monolithic dual asymmetrical 65 V breakover diode in the T 0 -2 2 0 A B outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a


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    BR216 T-I1-23 BR216 M3227 M3071 m3240 diode JJ ptm1 FN1510 PDF

    BV 480

    Abstract: SOIC-14
    Contextual Info: Semiconductor, Inc. EiMD05C8 thru EiMD24C8 Compact, Bidirectional, Eight Line Monolithic TVS Diode Network FEATURES • • • • • • • Protects eight I/O lines Monolithic IC for higher reliability at lower cost Manufactured using Proprietary technology


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    EiMD05C8 EiMD24C8 5/50ns) SOIC-14 EiMD05C8 EiMD12C8 EiMD15C8 BV 480 PDF

    smd diode schottky code marking 2F

    Contextual Info: Schottky Barrier Diode Single Diode m tm OUTLINE Package : 2F D2FS6 Unit^mm Weight 0.16g Typ io7 - F v - ? Cathode mark 60V 1.5A ®i Feature • Tj=150°C ' P rrsm T’A '^ V S ' i í SIÍE -<2> 1 1Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD T ype No.


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    PDF

    BYX99-300

    Abstract: BYX99 BYX99-300R 7110A2E
    Contextual Info: BYX99 S E R IE S T-O S-iT PHILIPS INTERNATIONAL viiosEb GDmti7G i n SbE ]> IPHIN RECTIFIER DIODES Silicon rectifier diodes in D O -4 metal envelopes, intended for use in power rectifier applications. The series consists o f the following types: Normal polarity cathode to stud ; B Y X 9 9 -3 0 0 to 1200.


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    BYX99 BYX99-300 BYX99-300R 1200R. 7110A2E PDF

    Contextual Info: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic


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    bbS3R31 002fl37b BU2520D bbS3T31 PDF

    TESLA DIODES

    Abstract: PIN DIODE UMX5101 magnetic diode
    Contextual Info: UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT KEY FEATURES The UMX5101 PIN diode series was designed to provide ultra low magnetic PIN diodes for in bore surface coil applications associated with higher field strength 3T and greater MR


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    UMX5101 UMX5101 TESLA DIODES PIN DIODE magnetic diode PDF

    cmos mux datasheet

    Abstract: QS3S257
    Contextual Info: IDTQS3S257 HIGH-SPEED CMOS SYNCHROSWITCH QUAD 2:1 MUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS SYNCHROSWITCH QUAD 2:1 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − − − − − − IDTQS3S257 Enhanced N channel FET with no inherent diode to Vcc


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    IDTQS3S257 20-pin poweQS3S257 cmos mux datasheet QS3S257 PDF

    40H00

    Abstract: ML40126 ML40126N ML44126N ML44126R ML4XX26 780nm 5v 3mW laser diode
    Contextual Info: MITSUBISHI LASER DIODES ML4XX26 SERIES AIGaAs LASER DIODES TYPE NAME FEATURES DISCRIPTION M L4XX26 s erise s ta b le , s in g le a re A IG a A s tr a n s v e r s e w a v e le n g th of 7 8 0 n m la s e r m ode diodes w hich o s c illa tio n provides w ith


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    ML4XX26 780nm ML40126) 333ms/div 600Hz) 40H00 ML40126 ML40126N ML44126N ML44126R 780nm 5v 3mW laser diode PDF

    IRK 160

    Abstract: I27900
    Contextual Info: Bulletin I27132 rev. E 10/01 IRK.71, .91 SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL under approval


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    I27132 3500VRMS O-240AA Al203 IRK 160 I27900 PDF

    Contextual Info: • ■■ Micmsemi Santa Ana, CA 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 m Progresa P ow ered b y Technology Capabilities Data Sheet Solar Array Bypass Diode Features • • • • • • Very Thin Construction Low leakage reverse current


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    300ms, MSC1051 PDF

    Contextual Info: Typical Size 6,4 mm X 9,7 mm TPS54673 www.ti.com SLVS433A − SEPTEMBER 2002 − REVISED FEBRUARY 2005 3ĆV TO 6ĆV INPUT, 6ĆA OUTPUT SYNCHRONOUS BUCK SWITCHER WITH DISABLED SINKING DURING STARTĆUP FEATURES D 30-mΩ, 12-A Peak MOSFET Switches for High D


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    TPS54673 SLVS433A PDF

    PS115

    Abstract: PS115 diode
    Contextual Info: • ■■ Micmsemi Santa Ana, CA 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 m Progresa P ow ered b y Technology Solar Array Blocking Diode Features Very Thin Construction Passivated mesa structure for very low leakage reverse currents


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    300ms, MSC1053 PS115 PS115 diode PDF

    Contextual Info: Typical Size 6,4 mm X 9,7 mm TPS54673 www.ti.com SLVS433A − SEPTEMBER 2002 − REVISED FEBRUARY 2005 3ĆV TO 6ĆV INPUT, 6ĆA OUTPUT SYNCHRONOUS BUCK SWITCHER WITH DISABLED SINKING DURING STARTĆUP FEATURES D 30-mΩ, 12-A Peak MOSFET Switches for High D


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    TPS54673 SLVS433A TPS54673 PDF

    PA0277

    Abstract: SLMA002 TPS54873 TPS54973 TPS54973PWP TPS54973PWPG4 TPS54973PWPR TPS54973PWPRG4
    Contextual Info: Typical Size 6,4 mm X 9,7 mm TPS54973 www.ti.com SLVS453A − FEBRUARY 2003 − REVISED FEBRUARY 2005 3-V TO 4-V INPUT, 9-A OUTPUT SYNCHRONOUS BUCK SWITCHER WITH DISABLED SINKING DURING START-UP FEATURES D 15-mΩ MOSFET Switches for High Efficiency D D D


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    TPS54973 SLVS453A TPS54973 PA0277 SLMA002 TPS54873 TPS54973PWP TPS54973PWPG4 TPS54973PWPR TPS54973PWPRG4 PDF

    1 J 250

    Abstract: MSC1049
    Contextual Info: • ■■ Micmsemi Santa Ana, CA 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 m Progresa P ow ered b y Technology Solar Array Blocking Diode Features • • • • • • Very Thin Construction Passivated mesa structure for very low leakage reverse currents


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    300ms, MSC1049 1 J 250 PDF

    Contextual Info: Typical Size 6,4 mm X 9,7 mm TPS54873 www.ti.com SLVS444A − OCTOBER 2002 − REVISED FEBRUARY 2005 4-V TO 6-V INPUT, 8-A OUTPUT SYNCHRONOUS BUCK SWITCHER WITH DISABLED SINKING DURING START-UP FEATURES D 30-mΩ, 12-A Peak MOSFET Switches for High D D D D


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    TPS54873 SLVS444A TPS54873 PDF

    fairchild micrologic

    Abstract: D9109 10-JK 9110 F 9109
    Contextual Info: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit


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    M3700 10--JK fairchild micrologic D9109 10-JK 9110 F 9109 PDF