C 10 PH DIODE Search Results

c 10 ph diode

Abstract: GL710
Contextual Info: PRODUCT INFORMATION APPLICATIONS: OA equipment Audio visual equipment Home appliances Telecommunication equipment terminal Measuring equipment Tooling machines Computers GL710 Infrared Emitting Diode IrDA Components Group ABSOLUTE MAXIMUM RATINGS PARAMETER

byv26c ph

Abstract: philips diode PH 15
Contextual Info: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

C 15 PH Zener diode

Abstract: diode zener ph c 20 ph Series Zener zener diode ph sr5 diode
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . diodes esd protection and emi filter arrays C A P ABILITIE S w w w. v i s h a y. c o m DISCLAIMER All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and

1N4148 SOD-80 ST

Abstract: 1N4148 SOD-80 bat41 BAT46 1N914 ph bat41 600 033V BAS40-02 BAV10 VMN-SG2114
Contextual Info: V i s h ay In t e r t e c h n o l o g y, In c . Diodes -Focus Products for Multi-Market Applications AND TEC I INNOVAT O L OGY Small-Signal Schottky and Switching Diodes N HN DIODES O 19 62-2012 Available in Surface-Mount and Leaded Packages FEATURED PACKAGES

Contextual Info: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage

K375

Abstract: MKL series vai 27 lf OM35F120PB OM45L120PB OM50F60PB OM60L60PB 50F60 60L60
Contextual Info: OM6OL6OPB OM45L120PB Preliminary Data Sheet OM50F60PB OM35F12QPB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp Dual IGBTs With FRED Diodes FEATURES • Includes Internal FRED Diode • Rugged Package Design

Contextual Info: DEVELOPMENT DATA BTV160DV SERIES This data sheet contains advance information and _are subject to change without notice. n 'a m e r p h i l i p s /d i s c r e t e ObE D • ’bbS3*i31 O O i n D S S ■ FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE

PFC BALLAST CONTROL IC

Abstract: IR2166 12v ballast ic ELECTRONIC BALLAST 12v diode 824 C 12 PH zener diode datasheet circuit diagram ballast 12v PD60198 MS-012AC 1N4148
Contextual Info: Data Sheet No. PD60198 revE IR2166 S & (PbF) PFC & BALLAST CONTROL IC Features • Programmable dead time • Internal ignition ramp • Internal fault counter • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc

WESTCODE SW

Contextual Info: T E C H N IC A L P U B L IC A T IO N $ WESTCODE SEMICONDUCTORS D P20 ISSUE 2 May, 1989 — - - - - Stud-Base Silicon Rectifier Diodes Type PCN/PCR020 30amperes average: up to 1200 volts Vr r m RATINGS Maximum values at 175°C Tj unless stated otherwise

MMAD1108

Contextual Info: MMAD1108 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin SOIC package for use as steering diodes protecting

DMJ4747

Abstract: DMJ4708 DMJ3102-000 DMF-5845 DMJ3086 DMF6554-000 DMF2190-000 DMJ4317-000 dme3013-000
Contextual Info: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes Features • ■ ' ±A Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages v v * uX ■ > * ' I < ^ p»iL VHM Description RF parameters, capacitance and breakdown voltage

marking code PH 200

Abstract: BAV70WS
Contextual Info: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current

TLP251

Contextual Info: T O S H IB A PH O T O C O U PLER SEMICONDUCTOR TOSHIBA TEC H N IC A L T L P 2 51 D A TA G a A íA s IRED & PHOTO-IC TLP251 U n it in mm INVERTER FOR AIR CONDITIONOR INDUCTION HEATING TRANSISTOR INVERTER PO W ER MOS FET GATE DRIVE IGBT GATE DRIVE The Toshiba TLP251 consists of a G a A iA s lig h t em itting diode and

M3227

Abstract: M3071 m3240 BR216 diode JJ ptm1 FN1510
Contextual Info: PHILIPS INTER NA TIONAL SbE D 711Dö5ti DDM1D7M 37T • PHIN BR216 T-ll-23 DUAL ASYMMETRICAL BREAKOVER DIODE The B R 2 1 6 is a monolithic dual asymmetrical 65 V breakover diode in the T 0 -2 2 0 A B outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

smd diode schottky code marking 2F

Contextual Info: Schottky Barrier Diode Single Diode m tm OUTLINE Package : 2F D2FS6 Unit^mm Weight 0.16g Typ io7 - F v - ? Cathode mark 60V 1.5A ®i Feature • Tj=150°C ' P rrsm T’A '^ V S ' i í SIÍE -<2> 1 1Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD T ype No.

SMBJxxA

Abstract: DO220A TVS diode MELF 275 SMA SMB diode guide SM6A27 DO-218AB vcut03b1-dd1 SACXX VBUS05L1 47 2L axial diode DO-219AB
Contextual Info: V i s h ay In t e r t e c h n o l o g y, In c . Diodes - Protect Against Transient Voltage Surge and ESD I INNOVAT AND TEC O L OGY T VS and ESD Protection N HN DIODES O 19 62-2012 Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s

BYX99-300

Abstract: BYX99 BYX99-300R 7110A2E
Contextual Info: BYX99 S E R IE S T-O S-iT PHILIPS INTERNATIONAL viiosEb GDmti7G i n SbE ]> IPHIN RECTIFIER DIODES Silicon rectifier diodes in D O -4 metal envelopes, intended for use in power rectifier applications. The series consists o f the following types: Normal polarity cathode to stud ; B Y X 9 9 -3 0 0 to 1200.

Contextual Info: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic

MA4P709-150

Abstract: UHF Phase Shifter AG312 MA4PH451 MA47266 Microwave PIN diode phase shifter circulator 1N5767 MA4P709-985 pin diode limiter 3 ghz 1 watt
Contextual Info: Application Note M an A M P com pany Design With PIN Diodes AG312 By Gerald Hiller V 2.00 Introduction The PIN diode finds wide usage in RF, UHF and microwave circuits. It is fundamentally a device w hose impedance, at these frequencies, is controlled by its DC

TESLA DIODES

Abstract: PIN DIODE UMX5101 magnetic diode
Contextual Info: UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT KEY FEATURES The UMX5101 PIN diode series was designed to provide ultra low magnetic PIN diodes for in bore surface coil applications associated with higher field strength 3T and greater MR

cmos mux datasheet

Abstract: QS3S257
Contextual Info: IDTQS3S257 HIGH-SPEED CMOS SYNCHROSWITCH QUAD 2:1 MUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS SYNCHROSWITCH QUAD 2:1 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − − − − − − IDTQS3S257 Enhanced N channel FET with no inherent diode to Vcc

QS3S257

Contextual Info: IDTQS3S257 HIGH-SPEED CMOS SYNCHROSWITCH QUAD 2:1 MUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS SYNCHROSWITCH QUAD 2:1 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − − − − − − IDTQS3S257 Enhanced N channel FET with no inherent diode to Vcc

32 line demux

Abstract: MUX CMOS 5 to 32 demux 74 demux Mux/DeMux IDTQS34XS257 QS34XS257 demux pin diagram 34xs
Contextual Info: IDTQS34XS257 HIGH-SPEED CMOS SYNCHROSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS SYNCHROSWITCH 32:16 MUX/DEMUX FEATURES: − − − − − − − − − − − − DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc

C2E1

Abstract: transistor QCA75A60 QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max