BZX EQUIVALENT Search Results

BZX 5V6

Abstract: BZX 9V1 BZX 4V7 BZX 6v8 bzx 8v2 8v2 BZX 15 BZX BZX -2V5 bZX equivalent BZX 2.7 v
Contextual Info: A C T IV E COMPONENTS FO R H YB R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IR C U ITS H Y B R ID E S CB-166 SOT-23 Voltage regulator diodes Marking Type Marquage Brochage Type . Pin conf. Diodes de régulation de tension VZT (V) rZT /t ' z r / VR (mI rai yy (V)

9V1-BZX 85

Abstract: 9v1bzx BZX 9.1 v KHEL diode zener 9v1 BZX 202E bZX equivalent C3636 39bzx bzx 85 zener
Contextual Info: Bulletin 55 - 402 KHEL Khandelwal Herrmann Electronics Limited Voltage : 9.1 - 200 Volts Current : 1.3 W TECHNICAL SPIFICATIONS OF 1 AMPERE ZENER DIODES TYPE KH1Z - 91V TO KH1Z - 200V FEATURES • Low Cost 25.4 MIN • Low Leakage • Low Forward Voltage Drop

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS

bzx65

Abstract: BZX55F bzx55c BKC Semiconductors BZX55C12 EQUIVALENT BZX65C
Contextual Info: DO-35 glass 0.5 Watt Use Advantages a Zener Diodes BZX55C2V4 thru BZX55C75 This family is equivalent to the European PRO Electron types. The specifications reflect similar low zener test currents over voitage ranges. For use in clipping and stabilizing circuits, where real protection is needed.

B2X55C

Abstract: B2X55C12 B2X55C15 BZX55C76 BKC Semiconductors
Contextual Info: DO-35 glass 0.5 Watt Zener Diodes BZX55C2V4 thru BZX55C75 Use Advantages This family is equivalent to the European PRO Electron types. The specifications reflect similar low zener test currents oyer voltage ranges. For use in clipping and stabilizing circuits, where real protection is needed.

1N4008

Abstract: PTC S1380 Diode 1N4008 1N4008 diode fx3439 Diode Equivalent 1N4008 s1380 Electronic ballast 11W ptc starter s1380 ptc
Contextual Info: Application Note 13 Issue 2 January 1996 The ZCN0545A and ZCP0545A Low Power IGBTs A Silicon/ Package Efficient Device for Compact Fluorescent Lamp CFL Ballasts and Static Switching David Bradbury IGBT Characteristics The N-Type ZCN0545A and P-Type ZCP0545A are Insulated Gate Bipolar

j 201a

Contextual Info: rZZ Ä 7# S G S -T H O M S O N [» ^ s m iO T M O O tg S LM 101 A - L M 201 A LM 301A SINGLE OPERATIO NAL AM PLIFIERS LM101A LM301A LM201A INPUT OFFSET VOLTAGE 0.2 mV 2 mV INPUT BIAS CURRENT 25 nA 70 nA INPUT OFFSET CURRENT 1.5 nA 2 nA SLEW RATE AS INVERTING

Contextual Info: 7 ^ 2 3 7 0022^0 1 • ' T- '7cl - 0 5 - l O LM101A-LM201A _ LM301A SGS-THOMSON IL iO T *! S G S-TH0MS0N 3QE D SINGLE OPERATIONAL AMPLIFIERS LM101A LM201A ■ ■ ■ ■ LM301A INPUT O FFSET VOLTAGE 0.2 mV INPUT BIAS CURRENT 25 nA INPUT O FFSET C U R RENT 1.5 nA

BZX 85C Zener diode

Abstract: zener bzx 33 85c DIODE 85c BZx 16 DIODE BZX 85c DIODE 85c BZx DIODE BZX 24 85c BZX 24 85C Zener Diode BZx 84 DIODE BZX 85c 15 BZX85Cxxx
Contextual Info: TAK CHEONG 1.3 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Rating Symbol Value Unit Maximum Steady State Power Dissipation @ TL ≤50°C, Lead Length = 3/8” PD 1.3 W 8.67 mW/°C -65 to +200 °C Derate Above 50°C Operating and Storage

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

Contextual Info: OPA659 OP A6 59 www.ti.com . SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 Wideband, Unity-Gain Stable, JFET-Input

Contextual Info: OPA659 OP A6 59 www.ti.com . SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 Wideband, Unity-Gain Stable, JFET-Input

CY7C1470V25

Abstract: CY7C1472V25 CY7C1474V25 29T1
Contextual Info: CY7C1470V25 CY7C1472V25 CY7C1474V25 72-Mbit 2 M x 36/4 M × 18/1 M × 72 Pipelined SRAM with NoBL Architecture 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBLTM Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

A101

Abstract: CY7C1379C
Contextual Info: CY7C1379C PRELIMINARY 9-Mbit 256K x 32 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™

cy7c1470v33

Contextual Info: CY7C1470V33 CY7C1472V33 CY7C1474V33 72-Mbit 2 M x 36/4 M × 18/1 M × 72 Pipelined SRAM with NoBL Architecture 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT

Contextual Info: CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 36-Mbit 1 M x 36/2 M × 18/512 K × 72 Pipelined SRAM with NoBL Architecture 36-Mbit (1 M × 36/2 M × 18/512 K × 72) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

Contextual Info: CY7C1470V25 CY7C1472V25 CY7C1474V25 72-Mbit 2 M x 36/4 M × 18/1 M × 72 Pipelined SRAM with NoBL Architecture 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBLTM Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

104 k5k capacitor

Abstract: k5k 104 capacitor 104 capacitor k5k ibm thinkpad t42 bmdc ibm thinkpad t40 ibm t42 M1E wireless ibm t40 lcd 1802 dfx
Contextual Info: IBM Mobile Systems ThinkPad Computer Hardware Maintenance Manual August 2004 This manual supports: ThinkPad T40/T40p, T41/T41p, T42/T42p MT 2373/2374/2375/2376/2378/2379 ThinkPad Dock II (MT 2877) Note Before using this information and the product it supports, be sure to read the general information

diac D30

Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED

3M Touch Systems

Contextual Info: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36)

3M Touch Systems

Contextual Info: CY7C12661KV18, CY7C12771KV18 CY7C12681KV18, CY7C12701KV18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency 36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) Features Functional Description • 36-Mbit density (4 M x 8, 4 M × 9, 2 M × 18, 1 M × 36)

3M Touch Systems

Contextual Info: CY7C12661KV18, CY7C12771KV18 CY7C12681KV18, CY7C12701KV18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency 36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) Features Functional Description • 36-Mbit density (4 M x 8, 4 M × 9, 2 M × 18, 1 M × 36)