BYX 65 400 Search Results

Contextual Info: £ÿ7 SGS'THOMSON D ^@llLi©ra K!lQ®i BYX 65-50 -> 400 FAST RECOVERY RECTIFIER DIODES • VERY FAST RECOVERY TIME ■ VERY LOW FORWARD RECOVERY TIME ■ VERY LOW RECOVERED CHARGE APPLICATIONS ■ DC AND AC MOTOR CONTROL ■ SWITCH MODE POWER SUPPLY ■ HIGH FREQUENCY CHOPPERS

100C30

Abstract: SJ12
Contextual Info: SGS-TUOMSON Rfflœ@iyieîB ![]es BYX 65-50 —» 400 FAST RECOVERY RECTIFIER DIODES • VERY FAST RECOVERY TIME ■ VERY LOW FORWARD RECOVERY TIME ■ VERY LOW RECOVERED CHARGE APPLICATIO N S ■ DC AND AC MOTOR CONTROL . SWITCHMODE POWER SUPPLY ■ HIGH FREQUENCY CHOPPERS

647 P

Contextual Info: SCìS-THOMSON BYX 65-50 -> 400 FAST RECOVERY RECTIFIER DIODES . VERY FAST RECOVERY TIME . VERY LOW FORWARD RECOVERY TIME . VERY LOW RECOVERED CHARGE A P P L IC A T IO N S • DC AND AC MOTOR CONTROL ■ SW ITCHM ODE POWER SUPPLY . HIGH FREQUENCY CHOPPERS AB S O L U T E RATING S limiting values

byx 200

Abstract: esm diodes byx 65 400 243300 243_400 243400 BYX/400 65400 ESM 244-600 244-600
Contextual Info: rZ7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES FAST RECOVERY RECTIFIER DIODES < 100 A Continued Type •o VRRM •fsm 1 vF iF 10 ms max ESM 765PI-600 ESM 765PI-800 BYX61- 50, BYX 61-100, BYX 61-200, BYX 61-300, BYX 61-400, (R) (R) (R) (R)

BYX58-200

Abstract: byx 21 BYX 13 400 R Diodes de redressement MR05 PY 55 byx58
Contextual Info: DIODES DE R E D R E SSE M E N T RAPIDE fast recovery rectifier diodes V r WM TYPES / 100 m A *M R *M R *M R *M R •M R / 400 m A 22 42 43 44 45 / * BA 157 * BA 158 * BA 159 / 1 A / * LQ 1 tamb — 25 C / 2 4 6 8 tamb = 25°C / PLR2T PLR 8 T PL R 15 T 1 A

mc 51002

Abstract: 61400 DIODE REDRESSEMENT diode byx diode byx 65 400 byx 35 150 diode LF 306-S MU Thomson-CSF diode BYX 13 400 R Thomson-CSF diodes de redressement
Contextual Info: G SÌC D 1• 7=1^23? 00G2271 4 S-THOMSON Q T H O M BYX 61-50, R BYX 61-400, (R) S O N - C S F DIVISION SEMICONDUCTEURS DISCRETS SUPEBSWITCH FA ST R E C O V E R Y R E C T IF IE R DIODES D IO D E S D E R E D R E S S E M E N T R A P ID E S 59C 02271 d T - o S V / '

BYX63-800

Abstract: GR812 1N3890 1N3891 1N3900 1N3903 1N3909 BYX62-600 BYX62-800 BYX63-600
Contextual Info: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes BYX BYX BYX BYX BYX BYX 66 - 500, R 66 - 600, (R) 66 - 700, (R) 66 - 800, (R) 66 - 900, (R) 6 6 -1 0 0 0 , (R) 12 A / tcase = 100°C * IN 3889, (R) * 1N 3890, (R) * 1N 3891, (R) * 1N 3892, (R)

byx 21

Abstract: byx 200 TI 65300 RPR2040 diodes byt RPR2040R Thomson-CSF diodes de redressement Diodes de redressement
Contextual Info: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A THOMSON-CSF Types 1N 3899, R A IN 3900, (R) A1N 3901, (R) A1N 3902, (R) A1N 3903, (R) BYX 63-600, (R) (A) (V) (R) (R) (R) (R) (R) 30 A / BYX BYX BYX BYX BYX BYX 40 A / RPR RPR RPR

diode byx

Abstract: diode byx 65 400 byx 200 BYX 13 400 R 74137 76136 byx85
Contextual Info: IB» BYX 82 O £s BYX 86 O 'W Silizium-Mesa-Dioden Silicon Mesa diodes Anwendung : Leistungsgleichrichter Applications: Pow er rectifier Features: Besondere Merkmale: • Herm etische Glasspassivierung • Hermetically sealed glass passivation • Gute Wärmeableitung über die

Contextual Info: G SÌC D 1• 7=1^23? 00G2271 4 S-TH O M SO N Q BYX 61-50, R BYX 61-400, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPEBSWITCH FA ST R EC O V ERY R E C T IF IE R DIODES D IO D E S D E R E D R E S S E M E N T R A P ID E S 59C 02271 d T - o S V / '

BYX61

Contextual Info: r z 7 SCS-THOMSON ^ 7 # meæ&gi5TOt»ies BYX 61-50 —» 400 FAST RECOVERY RECTIFIER DIODES • VERY FAST RECOVERY TIME ■ VERY LOW FORWARD RECOVERY TIME ■ VERY LOW RECOVERED CHARGE APPLICATIONS ■ DC AND AC MOTOR CONTROL . SWITCHMODE POWER SUPPLY ■ HIGH FREQUENCY CHOPPERS

65400

Abstract: DIODE REDRESSEMENT diode byx 65 400 equivalente 65400 m jonction 100J B101 b101 diode 319sg
Contextual Info: S^C D I 7 ^ 2 3 7 -THOMSON 59C 0 22 80 Q T H O M S O N aC S F 0 7"^ W 7 B Y B Y J C DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH Q0Ü22ÖG X 6 5 - 5 0 , 6 5 “ 4 0 0 R ( R ) FA S T R E C O V E R Y R E C T IF IE R D IO DES DIODES DE REDRESSEMENT RAPIDES

65400

Contextual Info: S^C D I 7 ^ 2 3 7 -THOMSON 59C 022 80 Q THOMSONaCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH Q0Ü22ÖG 0 7"^ W 7 BYX 6 5 -5 0 , R BYJC 6 5 “ 4 0 0 (R) F A S T R E C O V E R Y R E C T IF IE R D IO DES DIODES DE REDRESSEMENT RAPIDES FAST RECOVERY

BYX61200

Contextual Info: BYX 61-50 → 400 FAST RECOVERY RECTIFIER DIODES VERY FAST RECOVERY TIME VERY LOW FORWARD RECOVERY TIME VERY LOW RECOVERED CHARGE APPLICATIONS DC AND AC MOTOR CONTROL SWITCHMODE POWER SUPPLY HIGH FREQUENCY CHOPPERS DO 4 Metal ABSOLUTE MAXIMUM RATINGS (limiting values)

Contextual Info: rZ 7 SGS-THOMSON *7# [^Q œi[LI©TO Q [^a(gi 1N 3899 -> 1N 3903 BYX 63-600 FAST RECOVERY RECTIFIER DIODES • FAST RECOVERY TIME ■ LOW FORWARD RECOVERY TIME ■ AVAILABLE UP TO 600V APPLICATIONS ■ DC AND AC MOTOR CONTROL ■ SWITCH MODE POWER SUPPLY

Contextual Info: ÍZ 7 SGS-THOMSON 1N 3889 -> 1N 3893 BYX 62-600 * 7 # . H D Ä H U i » * FAST RECOVERY RECTIFIER DIODES • FAST RECOVERY TIME ■ LOW FORWARD RECOVERY TIME ■ AVAILABLE UP TO 600V APPLICATIONS ■ DC AND AC MOTOR CONTROL ■ SWITCH MODE POWER SUPPLY

BYX 13 400 R

Abstract: DIODE REDRESSEMENT 100-10L WD BYX62-600 1N3889 1N3893 IN3893 HT-77 vJ26 byx62
Contextual Info: SÌC D I 7 ^ 2 3 7 -THOMSON _ 59C 02065 O THOMSON-CSF DGDEGbS 1 _ D*T' e 3 ' / 7 ~ 1 N 3 8 8 9 ^ 1 N 3 8 9 3 , R B Y X 6 2 6 0 0 (R) DIVISION SEMICONDUCTEURS DISCRETS , SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES FAST RECOVERY

diodes byt

Abstract: diodes byw VRRM 600 IO 20 IN1344B 61100 IN1190
Contextual Info: THOMSON M IL E T S P A T IA U X SSE T> • T D 2 b fl7 E DDDDMflfl i m ■THCP1 T^&f- DESCRIPTION PRODUCT PACKAGE According to CECC 50000 DISCRETE COMPONENTS RECTIFIER DIODES = 50 V I0 = 12 A ■ BYW 88-100, R * v r r m = 100 V l0 = 12 A ■ BYW 88-200, (R)* V rrm = 200 V

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

BYX82

Abstract: BYX83 BYX84 BYX85 BYX86 BYX 98
Contextual Info: BYX82.BYX86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C

Contextual Info: BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Material categorization:

Contextual Info: BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Material categorization:

BYX82

Abstract: BYX83 BYX84 BYX85 BYX86
Contextual Info: BYX82.BYX86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C

BYX82

Abstract: BYX83 BYX84 BYX85 BYX86
Contextual Info: BYX82.BYX86 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C