BYW 90 Search Results

BYW29

Abstract: bvw29 BYW29-150M T0220SM 150V-200V
Contextual Info: 613 3107 bOE D SENELAB DQGQSSM 2TB « S I I L B - PLC T 3 - 1 7 SEMELAB BYW29 - 50M B Y W 29- 100M BYW 29-150M BYW 29-200M MECHANICAL DATA HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS Dimensions in mm FEATURES • HERMETIC TO 220 M ETAL OR

Contextual Info: BYW 08-50 → 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT AND AVALANCHE CAPABILITY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT

diodes byw

Contextual Info: BYW 100-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C

BYW 200

Abstract: BYW 90
Contextual Info: BYW 100-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C

ic 7850

Contextual Info: £ = T SCS-THOMSON eœaiioîffscgffloes BYW 78-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY ■ THE SPECIFICATIONS AND CURVES EN­

Contextual Info: BYW 100-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C UNDER USERS CONDITIONS

Contextual Info: BYW 78-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT AND AVALANCHE CAPABILITY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C

Contextual Info: r Z Z SGS-THOMSON ^ 7 # HmemBiHCTBIBBOOIBi BYW 100-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES . HIGH SURGE CURRENT ■ THE SPECIFICATIONS AND CURVES EN­

BYW 70

Contextual Info: SGS-THOMSON M e œ iL ie ïG M e s BYW 08-50 200 HIGH EFFIC IEN CY FAST R EC O VER Y R ECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY

transistor N100

Contextual Info: C T S G S - T H O M S O N ^ 7 # . HD»HLI TO s lfSlD(gi BYW 100-50 ->200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT ■ THE SPECIFICATIONS AND CURVES ENABLE

esja

Abstract: ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12
Contextual Info: Epitaxial Rectifier Diodes A tA = 25°C vF V ~ ¡F = I favm tv, = 25°C • ■ ■ ■ BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design 2x10 2x10 8 150 150 80 < 1,15 < 1,15 < 1,3 Ifsm Ifavm A t=8,3ms tvj = 25°C mA Ir trr outline mA ns < 35

Contextual Info: £ Z 7 S C S - T H O M S O N ^ 7# . [10MËILI §ra(B i0(SI BYW 08-50 -» 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE

fast diode byw 98 200

Abstract: 00SW1
Contextual Info: r z 7 ^ 7# S C S - T H O M S O N B H B m E a .ie 7 ^@M 0e i BYW 98-50 200 HIGH EFFIC IEN CY FAST R EC O VER Y R ECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT

ESJA

Abstract: ESJC
Contextual Info: Epitaxial Rectifier Diodes rrm V Ifa vm V Ifs m BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design Ir trr ns V mA = I fAVM tVJ= 25°C Vr = VHRM 150 150 80 < 1,15 < 1,15 <1,3 <0,6 <0,6 <0,6 V rrm If s m IpAVM kV A t=8,3ms tvj = 25°C mA tA = 25°C

Contextual Info: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T

Diode 1N4007 DO-7 Rectifier Diode

Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Contextual Info: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

diode BYW 66

Abstract: by 244 dioda BYW 90 diode BYW 85 diodes byw diode BYW 60 SFI6 te 02214 high efficiency fast recovery diode byw diode BYW
Contextual Info: S^C D t 7 C12C1237 G G G E E I G fc> S G S— T H O M S O N O T H O M S O N -C S F B V W DIVISION SEMICONDUCTEURS DISCRETS 7 5 _ B . Y — 2 _ _ _ W 7 1 5 A HIGH E FFIC IE N C Y FA ST R E C O V E R Y R E C T IF IE R S SUPERSWITCH R E D R E SS E U R S RA PID ES A H A U T REN D EM EN T

diodes byw

Abstract: byw 15200 BYW 90 byw 15400 byv 71-100 BYW 200 diodes byw 16400 byw 150 byw 15600 pfr 852
Contextual Info: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A THOMSON-CSF Type» •o Vrr m ■f s m 10 ms A (V) (A) vF / if |r / v r r m tirr (A) max (mA) max (nis) max 3 A / Ta n ib = 9 0 ° C PFR 850 PFR 851 PFR 852 PFR 854 PFR 856 3 3 A / Tam b = 5 0 ° C

aval

Contextual Info: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT

66R2S

Abstract: 30R2S Diodes de redressement byw 68 26R2S BYW 200 r2 137 C2501 C5001 REDRESSEMENT
Contextual Info: DO 4 C B 33 C ontrolled avalanche silicon rectifier diodes D iodes de redressement au s ilic iu m à avalanche con trô lé e T (vj» Type Case (°C I ' fsm (A i IO (A l Vf / if (V) (A) IR ! V RRM <mA) V (BR> (VI I p 0,5 mA DRT 25 °C 76 max min Page 25 OC

Diode BYW 56

Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli­

CB-257

Abstract: BYW 90 1N1581 diodes byw 214200 byw 150 D027A 1N1341B 200A2 1n1342
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types >0 VRRM A (V) 1HOMSON-CSF • fs m 10 ms vF (A) (V) / if max Tj = 175°C 3 A / Tam b = 100°C 1N 1N 1N 1N 1N 1N 5401 5402 5404 5406 5407 5407 S 3 1N 1N 1N 1N GS 5624 5625 5626 5627 5628 3 BVW17- 100

LT 7750

Abstract: BYW 90 77100 BYW31-150BYW77-5G
Contextual Info: RECTIFIERS UES701 BYW3I-50 BYW77-50 UES702 BYW31-100 BYW77-100 UES703 BYW31-150 BYW77-150 High Efficiency, 25 A FEATURES • Low Forward Voltage • Very Fast Switching • Low Thermal Resistance • High Surge Capability • Mechanically Rugged DESCRIPTION