BYW 77 Search Results

byw 150

Abstract: BYW 200 BYV 35 77150 BYV 77 diodes byw 51 100 Thomson-CSF rectifier BYW 29 500 BYW 98/100 BYV+80+-+200
Contextual Info: high efficiency fast recovery rectifier diodes diodes de redressement rapide à haut rendement Types •o VRRM ■f s m 10 m s A (V) (A) 3 A / Tcase = 85°C BYW BYW BYW BYW Tj = 150°C 9 8 - 50 98 -100 98 -150 98 -200 7 A / Tcase = 130°C BYW BYW BYW BYW

IC JRC 1038

Abstract: A 3150 V BYW77100
Contextual Info: Back to Ultra Fast Rectifiers NES701 N E S7 0 2 N E S7 0 3 BYW 31-50 BYW 31-100 BYW 31-150 BYW 77-50 BYW 77-100 BYW 77-150 RECTIFIERS High Efficiency, 25 A DESCRIPTION Designed to meet the efficiency demand of switching type power supplies, these devices are useful in many switching

77150

Abstract: diode puissance 30 amp diode BYW 76 diode BYW 66 BYW 77 high efficiency fast recovery diode byw diode BYW BYW 90 22313 diodes byw
Contextual Info: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSON aCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E FFIC IE N C Y FAST R ECO V ERY R E C TIFIE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT 59C 02228

0422 morocco

Abstract: BYW 77
Contextual Info: BYW 77-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT AND AVALANCHE CAPABILITY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C

Contextual Info: rZ 7 SGS-THOMSON ^7# [Ä » M g r a r e s BYW 77P-50 -> 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY

Contextual Info: rz 7 *1 M SCS-THOMSON r a m m ic im in e i BYW 77PI-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES . HIGH SURGE CURRENT AND AVALANCHE CAPABILITY

diodes byw

Abstract: diodes byw 16400 BYW 200 78200 byw77-200 77200 BYW81-100 byw 150 BYW 81-200 Vrrm
Contextual Info: THO M SO N Ï1IL ET S P A T I A U X SSE D • R02t,ê75 OGOOMfl'i 066 ■ T H C M DISCRETE COMPONENTS û_ PRODUCT DESCRIPTION PACKAGE s HIGH EFFICIENCY FAST RECOVERY RECTIFIERS BYW 77-150 V rr M = 150 V lo = 25 A trr max = 50 ns V r RM = 200 V lo = 25 A trr max = 50 ns

diodes byw

Abstract: byw 91 diode 8t4 7750 high power fast recovery diodes 5ns BYW 90 BYW 200 high power fast recovery diodes 5 ns 7T5T237
Contextual Info: F Z 7 # ^ 7 S G S - T H O M S O N M r a m iO T M o e s BYW 7 7 -5 0 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE

Contextual Info: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

BYV 200

Abstract: diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C
Contextual Info: / ^ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# raoœmimMogs ' r /v r r m Tj 100°C max mA *rr (1) max (ns) Package 1 35 TO 220 RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES (Continued) VRRM = 50,100,150, 200 V Type trr max 35.80 ns

BYV 200

Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
Contextual Info: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220

diode BYW 66

Abstract: by 244 dioda BYW 90 diode BYW 85 diodes byw diode BYW 60 SFI6 te 02214 high efficiency fast recovery diode byw diode BYW
Contextual Info: S^C D t 7 C12C1237 G G G E E I G fc> S G S— T H O M S O N O T H O M S O N -C S F B V W DIVISION SEMICONDUCTEURS DISCRETS 7 5 _ B . Y — 2 _ _ _ W 7 1 5 A HIGH E FFIC IE N C Y FA ST R E C O V E R Y R E C T IF IE R S SUPERSWITCH R E D R E SS E U R S RA PID ES A H A U T REN D EM EN T

BYW77100

Abstract: BYW77-150 BVW77-150 BYW31-100 BYW31-150 BYW31-50 BYW77-100 BYW77-50 UES701 UES702
Contextual Info: UES701 BYW31-50 BYW77-50 UES702 BYW31-100 BYW77-100 UES703 BYW31-150 BYW77-150 RECTIFIERS High Efficiency, 25 A FEATURES DESCRIPTION • • • • • • Designed to meet the efficiency'dem and of sw itchin g type power supp lies, these devices are useful in m any sw itching

66R2S

Abstract: 30R2S Diodes de redressement byw 68 26R2S BYW 200 r2 137 C2501 C5001 REDRESSEMENT
Contextual Info: DO 4 C B 33 C ontrolled avalanche silicon rectifier diodes D iodes de redressement au s ilic iu m à avalanche con trô lé e T (vj» Type Case (°C I ' fsm (A i IO (A l Vf / if (V) (A) IR ! V RRM <mA) V (BR> (VI I p 0,5 mA DRT 25 °C 76 max min Page 25 OC

Contextual Info: UES701 BYW31-50 BYW77-50 UES702 BYW31-100 BYW77-100 UES703 BYW31-150 BYW77-150 RECTIFIERS High Efficiency, 25 A DE S C R IP T IO N Designed to meet the efficiency demand of sw itching type power supplies, these devices are useful in m any sw itching applications.

LT 7750

Abstract: BYW 90 77100 BYW31-150BYW77-5G
Contextual Info: RECTIFIERS UES701 BYW3I-50 BYW77-50 UES702 BYW31-100 BYW77-100 UES703 BYW31-150 BYW77-150 High Efficiency, 25 A FEATURES • Low Forward Voltage • Very Fast Switching • Low Thermal Resistance • High Surge Capability • Mechanically Rugged DESCRIPTION

Contextual Info: F Z 7 SGS-THOMSON " * J f. «D g[g(ô [ilLIÊirMa(gi B Y W 7 7 -5 0 -> 2 0 0 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES - HIGH SURGE CURRENT AND AVALANCHE

diodes byw 51 200

Contextual Info: SGS-THOMSON c œ iŒ ig ? R M 3ûS B Y W 7 7 - 5 0 -> 2 0 0 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY

BYW96E

Abstract: BYW96D byw96 sod64 dimensions
Contextual Info: N AI1ER PHILIPS/DISCRETE bSE » • bbS3^31 ÜÜSttT2^fi3S H A P X A BYW96E AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated re c tifie r diodes in h e rm e tica lly sealed axial-leaded glass envelopes. T h e y are intended fo r television and ind u stria l a p p lications, such assw itched-m ode pow er supplies, scan rectifiers,

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

diode BYW 64

Abstract: B81121 X2 mkt TDB7812T B81121 B32530 1nf 100v mkt 100v mkt b81121 x2 7812T B41822
Contextual Info: Monitor -IC Nr 1 2 3 4 5 6 7 8 9 10 11 12 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Name BR1 C11 C12 C13 C14 C15 C21 C22 C23 C24 C25 C26 C27 C31 C32 C33 C34 C35 C36 C37 C38 C39 C41 C42 C43 C44 C51 C52 C53 C54 C61 C62