BYW 70 Search Results

byw 150

Abstract: BYW 200 BYV 35 77150 BYV 77 diodes byw 51 100 Thomson-CSF rectifier BYW 29 500 BYW 98/100 BYV+80+-+200
Contextual Info: high efficiency fast recovery rectifier diodes diodes de redressement rapide à haut rendement Types •o VRRM ■f s m 10 m s A (V) (A) 3 A / Tcase = 85°C BYW BYW BYW BYW Tj = 150°C 9 8 - 50 98 -100 98 -150 98 -200 7 A / Tcase = 130°C BYW BYW BYW BYW

46R2S

Abstract: r2s30 FR76 BYW 26 Thomson-CSF plastic diodes FR79 36R2S diodes byw CASA10 R83HZ
Contextual Info: controlled avalanche rectifier diodes diodes de redressement à avalanche contrôlée Types 3A •o VRRM A (V) / Tam|) = 80 °C BYW BYW BYW BYW 18- 400 18- 600 18- 800 18-1000 3 Tj = 150°C 400 600 800 1000 PRSM vF ^ V(BR)R @ Ir = 100mA 10 fiS JT. (V) (V)

BYW74

Abstract: 175aa byw76
Contextual Info: BYW 72 £8 BYW 76 'W Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Schneller Gleichrichter und Schalter z.B. für zeilenfrequenten Betrieb im Fern­ sehgerät und Schaltnetzteile. Applications: Fast rectifier and switch for example for TV-line output circuits and switch mode

byw 150

Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

P6004R

Abstract: BYW 62 s95A P4004 214200 BYW 200 P1004R BYW17/100
Contextual Info: DIODES DE REDRESSEMENT rectifier diodes V RWM 'o 'f TYPES A 1 ,2 5 A F F F F F F F no nxy nxy no BY BY BY BY BY t am b = 5 0 ° C 251 252 253 254 255 BYW 17BYW 17 BYW 17 BYW 17BYW 17BYW 17BYW 17- 100 200 400 600 800 1000 1200 3 A / 1N 1N IN 1N 1N IN 1N (R)

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

diode BYW 66

Abstract: BYW29 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

byw 91-4

Abstract: BYW series byw29
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

byw 04-15

Abstract: BYW29 JESD22-B102D J-STD-002B byw 91-4
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AC TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

BYW295

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYW29

Abstract: JESD22-B102 J-STD-002
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

byw 150

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

byw 15200

Abstract: BY218-400 BYX61 diodes byw 16400 BY218-600 GR606 BY218-200 1N3881 diodes byw GR806R
Contextual Info: DIODES DE REDRESSEMENT RAPIDE , fast recovery rectifier diodes TY PES 2A 3333 xy xy xy xy * BY * BY * BY * BY / 296 297 298 299 2A 3333 xy xy xy xy • BY •B Y •B Y • BY tam b = 5 0 °C / ta mb — 50°C 3A / *BYW •BYW •BYW •BYW • BYW 14- 100

BYW 26

Abstract: AMIC "marking" Transistor circuits Transistor 9850
Contextual Info: BYW 98-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C

Contextual Info: BYW 98-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C

RECTIFIER 92-50

Abstract: diodes byw 92 dt 9250 sid microelectronics
Contextual Info: BYW 92-50 → 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT AND AVALANCHE CAPABILITY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT100°C

byw77-200

Abstract: BYW93-200 BYW93 byw51 MUR2510 BYV32-50 MUR5020 BYW94-150 MUR3015PT MUR5015
Contextual Info: ULTRAFAST RECTIFIERS continued l0 , AVERAG E FORW ARD RECTIFIED CURRENT (A) 25 16 CASE 50 35 70 200 100 221A-02 56-02 340-01 257-01 3Ü7B-01 P lastic M etal P lastic M e tal F'lastic f f IK , TO -220AB* vrrm 30 — ! %; D04 P ow er Tap * D 05 TO-218AC*

BYW 200

Abstract: byw 150 diodes byw DO-220 BYW 70 80PI-200 BYW98-150 220-I R1550 81P-150
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL MO @lllLi gï[Ei©[iiilO(gS RECTIFIER DIODES TO 220 DOP 31 U ¿/ ISOTOP ISOTOP V TOP 31 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VRRM = 50» 10° - 150>200 v Type •o VRRM <FSM 10 ms vF / If T i 100°C max

BYW 200

Abstract: diodes byw 92 byw 150 diodes byw 08 200 Thomson-CSF diodes de redressement Diodes de redressement diodes byw CB-34 1250A2s 92200
Contextual Info: h ig h e ffic ie n c y f a s t r e c o v e r y r e c t if ie r d io d e s y THOMSON-CSF diodes de redressement rapide à haut rendement Types •o Vrrm >FSM 10 ms A <V ) (A) Tj = 150° C 35A / Tease = 110°C N N N BYV 92-200 (R) BYV 92-300 (R) BYV 92-400 (R)

42R2

Abstract: diode 42R2 BYW series FR56A FR57A 62R2 fr56 Thomson-CSF rectifier 22R2 FR58A
Contextual Info: o rectifier diodes < 100 A diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)

diodes byw 88 600 r

Abstract: DRA402 1N 414 B DRA 402 byw 600 214200 diodes byw 88 r diode 1n 1348 B DRA404 diodes byw
Contextual Info: rzrj SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# jüDSosüHLigirmiKSDiss RECTIFIER DIODES RECTIFIER DIODES < 100 A Type •o VRRM ■f s m 10 ms VF / lF max BY 214- 50 BY 214-100 BY 214-200 BY 214-400 BY 214-600 BY 214-800 1 BY 214-1000(1) 1N 1N 1N 1N 1N

42R2

Abstract: Thomson-CSF 22R2 62R2 All diodes KU 506 BYW 70 RP 8040 X BYW88-100 FR58A C1-200
Contextual Info: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)

66R2S

Abstract: 30R2S Diodes de redressement byw 68 26R2S BYW 200 r2 137 C2501 C5001 REDRESSEMENT
Contextual Info: DO 4 C B 33 C ontrolled avalanche silicon rectifier diodes D iodes de redressement au s ilic iu m à avalanche con trô lé e T (vj» Type Case (°C I ' fsm (A i IO (A l Vf / if (V) (A) IR ! V RRM <mA) V (BR> (VI I p 0,5 mA DRT 25 °C 76 max min Page 25 OC