BYW 600 Search Results

46R2S

Abstract: r2s30 FR76 BYW 26 Thomson-CSF plastic diodes FR79 36R2S diodes byw CASA10 R83HZ
Contextual Info: controlled avalanche rectifier diodes diodes de redressement à avalanche contrôlée Types 3A •o VRRM A (V) / Tam|) = 80 °C BYW BYW BYW BYW 18- 400 18- 600 18- 800 18-1000 3 Tj = 150°C 400 600 800 1000 PRSM vF ^ V(BR)R @ Ir = 100mA 10 fiS JT. (V) (V)

Diode BYW 56

Abstract: tfk 731 BYW56 BYW 56 V diodes byw BYW 52 TFK 03 diodes diode BYW N5059 DIODE in 5060
Contextual Info: m 'W ? BYW 52 E8 BYW 56 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power rectifier Besondere Merkmale: Features: • Stoßspannungsfest • Controlled avalanche characteristics • Hermetische G laspassivierung

P6004R

Abstract: BYW 62 s95A P4004 214200 BYW 200 P1004R BYW17/100
Contextual Info: DIODES DE REDRESSEMENT rectifier diodes V RWM 'o 'f TYPES A 1 ,2 5 A F F F F F F F no nxy nxy no BY BY BY BY BY t am b = 5 0 ° C 251 252 253 254 255 BYW 17BYW 17 BYW 17 BYW 17BYW 17BYW 17BYW 17- 100 200 400 600 800 1000 1200 3 A / 1N 1N IN 1N 1N IN 1N (R)

Contextual Info: BYW 27-50 . BYW 27-1000 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50.1000 V Plastic case Kunststoffgehäuse DO-41 DO-204AL Weight approx. – Gewicht ca.

BYW 64 bridge rectifier

Abstract: diode BYW 64
Contextual Info: BYW 27-50.BYW 27-1000 Silizium Gleichrichter Silicon Rectifier 1A Nominal current Nennstrom 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung DO-41 Plastic case Kunststoffgehäuse <*-nax. qf 2.6 0.4 Weight approx. Gewicht ca.

BYW 62

Abstract: BYW 200 BYW 26
Contextual Info: BYW 27-50 . BYW 27-1000 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung -0.1 50…1000 V Plastic case Kunststoffgehäuse 5.1 -0.1 Type 62.5 ±0.5 Ø 2.6 1A DO-41 DO-204AL

BYW 56 V

Abstract: BYW 200 DO-204AL
Contextual Info: BYW 27-50 . BYW 27-1000 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung -0.1 50…1000 V Plastic case Kunststoffgehäuse 5.1 -0.1 Type 62.5 ±0.5 Ø 2.6 1A DO-41 DO-204AL

BYW74

Abstract: 175aa byw76
Contextual Info: BYW 72 £8 BYW 76 'W Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Schneller Gleichrichter und Schalter z.B. für zeilenfrequenten Betrieb im Fern­ sehgerät und Schaltnetzteile. Applications: Fast rectifier and switch for example for TV-line output circuits and switch mode

BYW 26

Contextual Info: BYW 27-50 . BYW 27-1000 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung -0.1 50…1000 V Plastic case Kunststoffgehäuse 5.1 -0.1 62.5 ±0.5 Ø 2.6 1A DO-41 DO-204AL

byw 15200

Abstract: BY218-400 BYX61 diodes byw 16400 BY218-600 GR606 BY218-200 1N3881 diodes byw GR806R
Contextual Info: DIODES DE REDRESSEMENT RAPIDE , fast recovery rectifier diodes TY PES 2A 3333 xy xy xy xy * BY * BY * BY * BY / 296 297 298 299 2A 3333 xy xy xy xy • BY •B Y •B Y • BY tam b = 5 0 °C / ta mb — 50°C 3A / *BYW •BYW •BYW •BYW • BYW 14- 100

Diode LT 9250

Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
Contextual Info: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY

77150

Abstract: diode puissance 30 amp diode BYW 76 diode BYW 66 BYW 77 high efficiency fast recovery diode byw diode BYW BYW 90 22313 diodes byw
Contextual Info: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSON aCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E FFIC IE N C Y FAST R ECO V ERY R E C TIFIE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT 59C 02228

diodes byt

Abstract: diodes byw VRRM 600 IO 20 IN1344B 61100 IN1190
Contextual Info: THOMSON M IL E T S P A T IA U X SSE T> • T D 2 b fl7 E DDDDMflfl i m ■THCP1 T^&f- DESCRIPTION PRODUCT PACKAGE According to CECC 50000 DISCRETE COMPONENTS RECTIFIER DIODES = 50 V I0 = 12 A ■ BYW 88-100, R * v r r m = 100 V l0 = 12 A ■ BYW 88-200, (R)* V rrm = 200 V

byw 36 v

Abstract: BYW32 byw 32 BYW 200 TU300 byw+36+v
Contextual Info: w ► BYW 32 Ì? BYW 36 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: S ch n e lle r G le ic h ric h te r und S ch a lte r z. B. fü r zeilenfreq uen ten B etrieb im F e rn ­ sehgerät und Schaltnetzteile. Applications: Fast re ctifie r and sw itch for exam ple for TV-line output circuits and sw itch m ode

diode BYW 92

Abstract: 5 amp diode byw 92 diode BYW 92-200 SA 9259 diode puissance 30 amp BYW 90 diode BYW 66 diodes byw 5 amp diode byw 92-200 rms p2f
Contextual Info: S G S- TH OM SO N O STC T H O M D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) S O N - C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH H IG H E F F IC IE N C Y FAST R E C O V E R Y R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT

diode BYW 85

Abstract: BYW89 diodes byw 86 diode BYW 60 N5626 diode BYW 200 813BB diode BYW BYW 89 BYW 90
Contextual Info: BYW 82 STBYW 86 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power re ctifie r Besondere Merkmale: Features: • Kontrolliertes- Avalancheverhalten • H erm etische Glaspassivierung • G ute W ärm eableitung über die

Contextual Info: £ÿj SGS-THOMSON D ts œ iL IIê M i» BYW 88-50 1000 RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP ABSOLUTE MAXIMUM RATINGS limiting values Parameter Symbol Value Unit A Average Forward Current*

ic 7850

Contextual Info: £ = T SCS-THOMSON eœaiioîffscgffloes BYW 78-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY ■ THE SPECIFICATIONS AND CURVES EN­

BYW29

Abstract: BYW29-100 BYW29-150 BYW29-50 UES1401 UES1402 UES1403 es1403
Contextual Info: RECTIFIERS BYW29-50 UES1401 BYW29-100 UES1402 BYW 29-150 UES1403 High Efficiency, 7A and 8A DESCRIPTION The B YW 29/U ES1400 Series, in a plastic package sim ilar to the T0-220, is specifically designed for operation in power switching circuits to frequencies in excess of lOOKHz.

diodes byw 88 600 r

Abstract: BYW 200
Contextual Info: rz7 Ä 7# SGS-THOMSON 6800eB@ IILICTM ISID Ei BYW 8 8 -5 0 1000 RECTIFIER DIODES • STANDARD RECTIIFER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP DO 4 (Metal ABSOLUTE RATINGS (limiting values) Symbol Param eter Value Unit A ve rag e Forw ard C urrent*

diodes byw 51 200

Abstract: diodes byw 51 100 623 Diodes
Contextual Info: F i SGS-THOMSON BYW 88-50 in c 1000 RECTIFIER DIODES STANDARD RECTIIFER HIGH SURGE CURRENT CAPABILITY LOW FORWARD VOLTAGE DROP A B S O L U T E R A T IN G S limiting values Symbol P aram eter Value A verage F o rw ard C urrent* T c = 125°C S urge non R epetitive Forw ard C urre n t

BYV255V200

Abstract: byw29e150 MUR460 MUR880 BYV255V-200 EGP10G EGP20D EGP50D EGP50G MUR120
Contextual Info: ww w.i-t.su ¡nfo@ i-t.su k lH T E P T E K C electronics Ten\ 495 739-09-95, 644-41-29 C B e p x ö b iC T p b ie B b in p A M M T e n b H b ie flM O A b i Kofl: I Fmax Vf [B] [A] [B] B YW 100/200 EGP20D 200 200 1,5 2,0 BYW 98/200 EGP50D EGP50G UF5404 UF5408

42R2

Abstract: diode 42R2 BYW series FR56A FR57A 62R2 fr56 Thomson-CSF rectifier 22R2 FR58A
Contextual Info: o rectifier diodes < 100 A diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)

diodes byw 88 600 r

Abstract: DRA402 1N 414 B DRA 402 byw 600 214200 diodes byw 88 r diode 1n 1348 B DRA404 diodes byw
Contextual Info: rzrj SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# jüDSosüHLigirmiKSDiss RECTIFIER DIODES RECTIFIER DIODES < 100 A Type •o VRRM ■f s m 10 ms VF / lF max BY 214- 50 BY 214-100 BY 214-200 BY 214-400 BY 214-600 BY 214-800 1 BY 214-1000(1) 1N 1N 1N 1N 1N