BYW 54 Search Results

46R2S

Abstract: r2s30 FR76 BYW 26 Thomson-CSF plastic diodes FR79 36R2S diodes byw CASA10 R83HZ
Contextual Info: controlled avalanche rectifier diodes diodes de redressement à avalanche contrôlée Types 3A •o VRRM A (V) / Tam|) = 80 °C BYW BYW BYW BYW 18- 400 18- 600 18- 800 18-1000 3 Tj = 150°C 400 600 800 1000 PRSM vF ^ V(BR)R @ Ir = 100mA 10 fiS JT. (V) (V)

Diode BYW 56

Abstract: tfk 731 BYW56 BYW 56 V diodes byw BYW 52 TFK 03 diodes diode BYW N5059 DIODE in 5060
Contextual Info: m 'W ? BYW 52 E8 BYW 56 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power rectifier Besondere Merkmale: Features: • Stoßspannungsfest • Controlled avalanche characteristics • Hermetische G laspassivierung

BYW 64 bridge rectifier

Abstract: diode BYW 64
Contextual Info: BYW 27-50.BYW 27-1000 Silizium Gleichrichter Silicon Rectifier 1A Nominal current Nennstrom 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung DO-41 Plastic case Kunststoffgehäuse <*-nax. qf 2.6 0.4 Weight approx. Gewicht ca.

BYW29 diode rectifier

Abstract: BYW29 TMF-3 TU-31
Contextual Info: BYW 29 SERIES _ PHILIPS INT ERN AT IO NAL 5 bE D • 7 1 1 DfiSb 0 0 4 1 S 4 4 mb HIPH IN T -Ô 3 " 1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h igh-efficien cy ep itaxial re c tifie r diodes in plastic envelopes, featu rin g lo w fo rw a rd

ESJA

Abstract: ESJC
Contextual Info: Epitaxial Rectifier Diodes rrm V Ifa vm V Ifs m BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design Ir trr ns V mA = I fAVM tVJ= 25°C Vr = VHRM 150 150 80 < 1,15 < 1,15 <1,3 <0,6 <0,6 <0,6 V rrm If s m IpAVM kV A t=8,3ms tvj = 25°C mA tA = 25°C

Contextual Info: BYW 29 SERIES _ U L T R A F A S T R E C O V E R Y R E C TIFIE R D IO D E S Glass-passivated, hig h -e fficie n cy e p ita xia l re c tifie r diodes in plastic envelopes, fe aturing low fo rw a rd voltage dro p , u ltra fast reverse recovery tim es w ith very low stored charge and soft-recovery

CB-257

Abstract: BYW 90 1N1581 diodes byw 214200 byw 150 D027A 1N1341B 200A2 1n1342
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types >0 VRRM A (V) 1HOMSON-CSF • fs m 10 ms vF (A) (V) / if max Tj = 175°C 3 A / Tam b = 100°C 1N 1N 1N 1N 1N 1N 5401 5402 5404 5406 5407 5407 S 3 1N 1N 1N 1N GS 5624 5625 5626 5627 5628 3 BVW17- 100

BYV 200

Abstract: diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C
Contextual Info: / ^ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# raoœmimMogs ' r /v r r m Tj 100°C max mA *rr (1) max (ns) Package 1 35 TO 220 RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES (Continued) VRRM = 50,100,150, 200 V Type trr max 35.80 ns

BYV 200

Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
Contextual Info: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

aeg rectifier

Abstract: TELEFUNKEN BYW-56 BYW 56 V aeg telefunken
Contextual Info: 0029426 A E G CQRP ' ' " Al DE | D D S^ ilg k □□□5bHfl M f~ ' f - Q / _ ¿jy Sinterglass Rectifiers In addition to the switching transistor, every high voltage converter circuit needs a variety of fast, and standard-recovery rectifier diodes for the various commutation, level shifting,

Diode BYW 56

Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli­

IN5059

Abstract: 1n5062 equivalent diodes byw Diode BYW 56 BYW 52 BYW 200 1N5060 diode BYW 54 byw 56 equivalent
Contextual Info: Te m ic BYW52.BYW56 T ELEFU NK EN Sem iconductors Silicon Mesa Rectifiers Features • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:

N5625

Abstract: diodes byw N5624 diodes byw 88 600 r
Contextual Info: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • Low reverse current • High surge current loading • Electrically equivalent diodes:

BYV16

Abstract: BYV 200v BYW 56 V BYV12
Contextual Info: BYV12 ST BYV16 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Schneller Gleichrichter und Schalter z. B. für zeilenfrequenten Betrieb im Fern­ sehgerät und Schaltnetzteile. Applications: Fast rectifier and switch for example for TV-line output circuits and switch mode

fast diode byw 98 200

Abstract: silicon diode byw 60
Contextual Info: BYW72.BYW76 Vishay Telefunken Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current • Soft recovery characteristics Applications 94 9588 Fast rectifier and sw itch fo r exam ple fo r T V -lin e o ut­

diode BYW 91

Abstract: byw 98 100 fast diode byw 98 200 fast diode byw 98 100
Contextual Info: BYW32.BYW36 Vishay Telefunken Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current • Soft recovery characteristics Applications Fast rectifier and sw itch fo r exam ple fo r T V -lin e o ut­

PF6HZ

Abstract: P8HZ P6HZ PL10HZ R10HZR P10HZ F62Z P4HZR PL6HZ
Contextual Info: DIODES DE REDRESSEMENT A AVALANCHE CONTROLEE controlled avalanche rectifier diodes Vrw M TYPES ^ V RA @ I r = 1 0 0 jiA V VRRM Vo (V) 1A c my my mxy n PL PL PL PL / 4 HZ 6 HZ 8 HZ 10 HZ 2A 1N 1N 1N 1N IN o 3938 3939 3940 3941 3942 my my F 42 Z F 62 Z F 82 Z

ACPF-7124

Abstract: ACFF-1024 LTE filter 2320 ism bandpass filter wifi 2.4 ghz pcb layout LTE filter band 40 wifi circuit board diagram wifi file transfer and storage system circuit diagram LTE filter band 13
Contextual Info: ACFF-1024 ISM Bandpass Filter 2401 – 2482 MHz Data Sheet Description Features The Avago ACFF-1024 is a miniaturized Bandpass Filter designed for use in the 2.4 GHz Industrial, Scientific and Medical (ISM) band. • 50 Ω Input/Output The ACFF-1024 is designed to enable concurrent operation of Wireless LAN and Bluetooth applications that coexist with other wireless standards, such as 2.5 GHz WiMAX,

Contextual Info: ACFF-1024 ISM Bandpass Filter 2401 – 2482 MHz Data Sheet Description Features The Avago ACFF-1024 is a miniaturized Bandpass Filter designed for use in the 2.4 GHz Industrial, Scientific and Medical (ISM) band. • 50 Ω Input/Output The ACFF-1024 is designed to enable concurrent operation of Wireless LAN and Bluetooth applications that coexist with other wireless standards, such as 2.5 GHz WiMAX,

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

ACPF-7124

Contextual Info: ACFF-1024 ISM Bandpass Filter 2401 – 2482 MHz Data Sheet Description Features The Avago ACFF-1024 is a miniaturized Bandpass Filter designed for use in the 2.4 GHz Industrial, Scientific and Medical (ISM) band. • 50 Ω Input/Output The ACFF-1024 is designed to enable concurrent operation of Wireless LAN and Bluetooth applications that coexist with other wireless standards, such as 2.5 GHz WiMAX,

5SBA20

Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­