BYW 150 Search Results

byw 150

Abstract: BYW 200 BYV 35 77150 BYV 77 diodes byw 51 100 Thomson-CSF rectifier BYW 29 500 BYW 98/100 BYV+80+-+200
Contextual Info: high efficiency fast recovery rectifier diodes diodes de redressement rapide à haut rendement Types •o VRRM ■f s m 10 m s A (V) (A) 3 A / Tcase = 85°C BYW BYW BYW BYW Tj = 150°C 9 8 - 50 98 -100 98 -150 98 -200 7 A / Tcase = 130°C BYW BYW BYW BYW

IC JRC 1038

Abstract: A 3150 V BYW77100
Contextual Info: Back to Ultra Fast Rectifiers NES701 N E S7 0 2 N E S7 0 3 BYW 31-50 BYW 31-100 BYW 31-150 BYW 77-50 BYW 77-100 BYW 77-150 RECTIFIERS High Efficiency, 25 A DESCRIPTION Designed to meet the efficiency demand of switching type power supplies, these devices are useful in many switching

46R2S

Abstract: r2s30 FR76 BYW 26 Thomson-CSF plastic diodes FR79 36R2S diodes byw CASA10 R83HZ
Contextual Info: controlled avalanche rectifier diodes diodes de redressement à avalanche contrôlée Types 3A •o VRRM A (V) / Tam|) = 80 °C BYW BYW BYW BYW 18- 400 18- 600 18- 800 18-1000 3 Tj = 150°C 400 600 800 1000 PRSM vF ^ V(BR)R @ Ir = 100mA 10 fiS JT. (V) (V)

BYW 64 bridge rectifier

Abstract: diode BYW 64
Contextual Info: BYW 27-50.BYW 27-1000 Silizium Gleichrichter Silicon Rectifier 1A Nominal current Nennstrom 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung DO-41 Plastic case Kunststoffgehäuse <*-nax. qf 2.6 0.4 Weight approx. Gewicht ca.

byw 150

Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

BYW 90

Abstract: l200c 1200C dioda ZTF 160 soae
Contextual Info: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A, (R) 1H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT D T 'ô 3 ~ Z I 59C 022 HIGH EFFICIENCY SUPERSWITCH

P6004R

Abstract: BYW 62 s95A P4004 214200 BYW 200 P1004R BYW17/100
Contextual Info: DIODES DE REDRESSEMENT rectifier diodes V RWM 'o 'f TYPES A 1 ,2 5 A F F F F F F F no nxy nxy no BY BY BY BY BY t am b = 5 0 ° C 251 252 253 254 255 BYW 17BYW 17 BYW 17 BYW 17BYW 17BYW 17BYW 17- 100 200 400 600 800 1000 1200 3 A / 1N 1N IN 1N 1N IN 1N (R)

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

diode BYW 66

Abstract: BYW29 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

byw 91-4

Abstract: BYW series byw29
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

byw 04-15

Abstract: BYW29 JESD22-B102D J-STD-002B byw 91-4
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AC TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

BYW295

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYW29

Abstract: JESD22-B102 J-STD-002
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

diode byw 81 200

Abstract: Diode BYW 59 Diode BYW 56 diode BYW 66 Q002 ANTENA 8150 diode diode BYW diode BYW 81 diode P2F
Contextual Info: S G S-THOMSQN : SIC D THOMSON*CSF o DIVISION SEMICONOUCTÏURS DISCRETS TTETEB? QGQEEMt. BYW 81-50—200, R BYW 81-150 A . (R) SUPERSWITCH HIGH E FF IC IE N C Y FA ST R EC O V ERY R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY

BYW29

Abstract: bvw29 BYW29-150M T0220SM 150V-200V
Contextual Info: 613 3107 bOE D SENELAB DQGQSSM 2TB « S I I L B - PLC T 3 - 1 7 SEMELAB BYW29 - 50M B Y W 29- 100M BYW 29-150M BYW 29-200M MECHANICAL DATA HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS Dimensions in mm FEATURES • HERMETIC TO 220 M ETAL OR

77150

Abstract: diode puissance 30 amp diode BYW 76 diode BYW 66 BYW 77 high efficiency fast recovery diode byw diode BYW BYW 90 22313 diodes byw
Contextual Info: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSON aCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E FFIC IE N C Y FAST R ECO V ERY R E C TIFIE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT 59C 02228

byw 15200

Abstract: BY218-400 BYX61 diodes byw 16400 BY218-600 GR606 BY218-200 1N3881 diodes byw GR806R
Contextual Info: DIODES DE REDRESSEMENT RAPIDE , fast recovery rectifier diodes TY PES 2A 3333 xy xy xy xy * BY * BY * BY * BY / 296 297 298 299 2A 3333 xy xy xy xy • BY •B Y •B Y • BY tam b = 5 0 °C / ta mb — 50°C 3A / *BYW •BYW •BYW •BYW • BYW 14- 100

diode BYW 92

Abstract: 5 amp diode byw 92 diode BYW 92-200 SA 9259 diode puissance 30 amp BYW 90 diode BYW 66 diodes byw 5 amp diode byw 92-200 rms p2f
Contextual Info: S G S- TH OM SO N O STC T H O M D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) S O N - C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH H IG H E F F IC IE N C Y FAST R E C O V E R Y R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT

ultra fast recovery diodes

Abstract: BYW series
Contextual Info: BYW 30 SERIES _ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery

Contextual Info: BYW 08-50 → 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT AND AVALANCHE CAPABILITY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT

diodes byw

Contextual Info: BYW 100-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C

BYW 26

Abstract: AMIC "marking" Transistor circuits Transistor 9850
Contextual Info: BYW 98-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C

Contextual Info: £ÿj SGS-THOMSON D ts œ iL IIê M i» BYW 88-50 1000 RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP ABSOLUTE MAXIMUM RATINGS limiting values Parameter Symbol Value Unit A Average Forward Current*