|
BY550-100
|
|
Daesan Electronics
|
CURRENT 5.0 Amperes VOLTAGE 50 to 1000 Volts |
Original |
PDF
|
276.87KB |
2 |
|
BY550-100
|
|
Diotec
|
Silicon Rectifiers |
Original |
PDF
|
181.55KB |
2 |
|
BY550-100
|
|
EIC Semiconductor
|
Silicon Rectifier Diode |
Original |
PDF
|
38.49KB |
2 |
|
BY550-100
|
|
EIC Semiconductor
|
Silicon Rectifier Diodes |
Original |
PDF
|
17.03KB |
2 |
|
BY550-100
|
|
Galaxy Semi-Conductor Holdings
|
PLASTIC SILICON RECTIFIER |
Original |
PDF
|
53.42KB |
2 |
|
BY550-100
|
|
Dionix
|
General Purpose Silicon Rectifier (Short form datasheet) |
Scan |
PDF
|
56.04KB |
1 |
|
BY550-100
|
|
Fagor
|
5 Amp Silicon Rectifier Diodes |
Scan |
PDF
|
73.79KB |
2 |
|
BY550-100
|
|
Fagor
|
5 Amp Silicon Rectifier Diodes |
Scan |
PDF
|
340.79KB |
7 |
|
BY550-100
|
|
Jinan Gude Electronic Device
|
5.0 AMP.SILICON RECTIFIERS |
Scan |
PDF
|
140.89KB |
2 |
|
BY550-100
|
|
Terry Semiconductor
|
Silicon Rectifiers |
Scan |
PDF
|
27.04KB |
1 |
|
BY550-1000
|
|
Diotec
|
Silicon Rectifier |
Original |
PDF
|
181.55KB |
2 |
|
BY550-1000
|
|
EIC Semiconductor
|
Silicon Rectifier Diodes |
Original |
PDF
|
17.03KB |
2 |
|
BY550-1000
|
|
Fagor
|
5 Amp Silicon Rectifier Diodes |
Scan |
PDF
|
73.79KB |
2 |
|
BY550-1000
|
|
Fagor
|
5 Amp Silicon Rectifier Diodes |
Scan |
PDF
|
340.79KB |
7 |
|
|
|
BY550-1000
|
|
Jinan Gude Electronic Device
|
5.0 AMP.SILICON RECTIFIERS |
Scan |
PDF
|
140.89KB |
2 |
|
BY550-1000G
|
|
EIC SEMICONDUCTOR
|
DIODE GEN PURP 1KV 5A DO201AD |
Original |
PDF
|
94.67KB |
2 |
|
BY550-100-T3
|
|
Won-Top Electronics
|
5.0A STANDARD DIODE |
Original |
PDF
|
44.18KB |
4 |
BY550-100
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon rectifier diode with 5.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, and high surge current capability, suitable for single-phase half-wave applications. |
Original |
PDF
|
|
|
|
BY550-1000
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon rectifier diode with 5.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, and high surge current capability in DO-201AD package.Axial leaded silicon rectifier diode with 5.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, and high surge current capability, suitable for single-phase half-wave applications.Axial leaded silicon rectifier diode with 5.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, and high surge current capability, suitable for single-phase half-wave applications.5.0A axial leaded silicon rectifier diode with 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, high surge current capability, and operating junction temperature from -65 to +175°C.5.0A axial leaded silicon rectifier diode with 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, high surge current capability, and operating junction temperature from -65 to +175°C. |
Original |
PDF
|
|
|
BY550-100
