BY 550 1000V 5A Search Results
BY 550 1000V 5A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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170M6462
Abstract: 170H3006 170M7031 170H3027 170M8554 170M8608 170M2666 170M7636 170M7595 170M6814
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157-iversal 1BS101 1BS102 1BS103 1BS104 SB00-D 170M6462 170H3006 170M7031 170H3027 170M8554 170M8608 170M2666 170M7636 170M7595 170M6814 | |
73247Contextual Info: 2014 | | CATALOGO GENERALE - GENERAL CATALOGUE | Via E. Fermi, 40/42 20090 Assago, MI | Italia Tel. +39 02 93977.1 Fax +39 02 93904565 info@italweber.it www.italweber.it CATALOGO GENERALE | 2014 2014 2014 | | CATALOGO GENERALE - GENERAL CATALOGUE | | CATALOGO |
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Contextual Info: , Dnc. J.£ii£U TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6754 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500(Min.) • High Switching Speed |
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2N6754 | |
3phase winding data 3.7 kw to 110 kw
Abstract: J73KN-b-01 ICE 947 EN 60947 3 phase, 415v and 37 kw motor yd 803 J7KN110 3 phase, 415v and 270 kw motor EM- 546 motor wiring diagram 3 phase dol compressor Starting Current 7.5KW Motor 440v
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380/415V) J7KN-10-01 J7KN-22-01 J7KN-150-11 J7KN-175-11 J7KN-24 J7KN-32 J7KN-40 J7KN-50 J7KN-62 3phase winding data 3.7 kw to 110 kw J73KN-b-01 ICE 947 EN 60947 3 phase, 415v and 37 kw motor yd 803 J7KN110 3 phase, 415v and 270 kw motor EM- 546 motor wiring diagram 3 phase dol compressor Starting Current 7.5KW Motor 440v | |
capacitor MKP 630V
Abstract: capacitor MKP 1000V 15n J 630V MKP 630V Philips MKP 378 cbb81 MKP 1000V 15n J 630V MKP PHILIPS 74224 15n J 630V. 378 MKP/MKP
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MKP/MKP378 HQN-384-17/102 HQN-384-17/102 MKP378-MKPMKP378 CP-R05053) R05164 R06026) capacitor MKP 630V capacitor MKP 1000V 15n J 630V MKP 630V Philips MKP 378 cbb81 MKP 1000V 15n J 630V MKP PHILIPS 74224 15n J 630V. 378 MKP/MKP | |
3phase winding data 3.7 kw to 110 kw
Abstract: 1000v contactor J7KN-22-01 j7kn-32 J73KN-b-01 KNC 201 15 yd 803 knc 201 39 wiring diagram to hold contactor with NO, NC controls for 22kw motor
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380/415V) Conta7KN-10-01 J7KN-22-01 J7KN-150-11 J7KN-175-11 J7KN-24 J7KN-32 J7KN-40 J7KN-50 J7KN-62 3phase winding data 3.7 kw to 110 kw 1000v contactor J7KN-22-01 j7kn-32 J73KN-b-01 KNC 201 15 yd 803 knc 201 39 wiring diagram to hold contactor with NO, NC controls for 22kw motor | |
batery
Abstract: SPMS506-01 SPMS506-01F SPMS506-01FM SPMS506-01M pm0011
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SPMS506-01 SPMS506-01F -01FM -55oC 125oC SPMS506-01M SPMS506-01FM batery SPMS506-01 SPMS506-01F SPMS506-01FM SPMS506-01M pm0011 | |
mw 137 600g
Abstract: transistor 5cw 069UR1S0250B bs88-4 070US3U1400B 110UR2S0800B transistor 6cw 069UR1S0350B transistor 5cw 61 IXYS CATALOGUE
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Contextual Info: PRELIMINARY SPMS506-01 & -01M SPMS506-01F & -01FM SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: • Space Flight Proven Heritage. • High Charge/Discharge Current. |
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SPMS506-01 SPMS506-01F -01FM -55oC 125oC SPMS506-01M SPMS506-01FM | |
OA 70 diode
Abstract: 1000v 35amp I222-00
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O-258AA 300/jsec, OA 70 diode 1000v 35amp I222-00 | |
Magnetic Field Sensor FLC 100
Abstract: CL02A400T MC1A310AT g85 wafer 12 volt electronic ballast for xenon light RJ45-B act ge 106 18p IEC61009-1 gec switchgear DDICE60
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fast recovery 35amp
Abstract: Motorola TO92 OM15N50C OM30N20C OM35N10C OM5N100C OM803
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0Q00S5a O-258AA QM35N10C OM15N50C OM30N20C OM5N100C OM803 300/jsec, fast recovery 35amp Motorola TO92 OM35N10C OM5N100C OM803 | |
GTCA28-272L-R03
Abstract: GTCA28-122M-R03 GTCA28-252M-R03 GTCA28-212M-R03 GTCA28-801M-R05 GTCA28-402M-R03
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Contextual Info: Gas Discharge Tubes Gas Discharge Tubes TE Circuit Protection’s GDTs Gas Discharge Tubes are placed in front of, and in parallel with, sensitive telecom equipment such as power lines, communication lines, signal lines and data transmission lines to help protect them from |
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2903D
Abstract: irgddn200m12
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IRGDDN200M12 IRGRDN200M12 2903D | |
Contextual Info: AOK5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along |
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AOK5N100 AOK5N100 AOK5N100L O-247 | |
Contextual Info: AOK5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along |
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AOK5N100 AOK5N100 AOK5N100L O-247 Drain-Sour00 | |
Contextual Info: AOK5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along |
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AOK5N100 AOK5N100 AOK5N100L O-247 Drain-S00 | |
Contextual Info: AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss |
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AOT5N100/AOTF5N100 AOT5N100 AOTF5N100 AOT5N100L AOTF5N100L O-220 O-220F AOTF5N100 Maximum00 | |
Contextual Info: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
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5639A IRG4BC20SPbF O-220AB O-220AB I4BC20SPbF | |
Contextual Info: AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss |
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AOT5N100/AOTF5N100 AOT5N100 AOTF5N100 AOT5N100L AOTF5N100L O-220 O-220F AOTF5N100 Maxi00 | |
Contextual Info: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
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5639A IRG4BC20SPbF O-220AB O-220AB | |
sspc 270V
Abstract: 53508 BY 550 1000V 5A
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MIL-PRF-38534, sspc 270V 53508 BY 550 1000V 5A | |
Contextual Info: PRODUCT Æ lttran CÂTÂl ' N-CHANNEL ENHANCEMENT MOS FET 1000V. 9A, 1.4 n S D F 9 N 100 JEA S D F 9 N 100 JEB S D F 9 N 100 JEC 5DF9N100 JED FEATURES • RUGGED PACKAGE HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS |
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5DF9N100 MIL-S-19500 A48-1 |